AP13P15GP

AP13P15GS/P Pb Free Plating Product Advanced Power Electronics Corp. ▼ Lower On-resistance ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ RoHS Compliant G S D P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -150V 300mΩ -13A Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-263 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP13P15GP) are available for low-profile applications. G D GD S TO-263(S) TO-220(P) S Rating -150 ±20 -13 -8.2 52 96 0.77 Units V V A A A W W/ ℃ ℃ ℃ Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 1.3 62 Units ℃/W ℃/W Data and specifications subject to change without notice 200728051-1/4 AP13P15GS/P Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=-1mA 2 Min. -150 -1 - Typ. -0.1 6 38 5 15 11 21 60 36 220 60 3.5 Max. Units 300 -3 -25 -100 ±100 60 5 V V/℃ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Ω Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25oC) Drain-Source Leakage Current (Tj=150oC) VGS=-10V, ID=-7A VDS=VGS, ID=-250uA VDS=-10V, ID=-7A VDS=-150V, VGS=0V VDS=-120V, VGS=0V VGS= ±20V ID=-7A VDS=-120V VGS=-10V VDS=-75V ID=-7A RG=10Ω,VGS=-10V RD=10.7Ω VGS=0V VDS=-25V f=1.0MHz f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 1210 1940 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 2 Test Conditions IS=-7A, VGS=0V IS=-7A, VGS=0V, dI/dt=-100A/µs Min. - Typ. 110 620 Max. Units -1.3 V ns nC Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by safe operating area. 2.Pulse width