AP2301GN

AP2301GN-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Small Package Outline D BVDSS -20V RDS(ON) 130mΩ ID ▼ Surface Mount Device ▼ RoHS Compliant - 2.6A S SOT-23 Description G D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. G S The SOT-23 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25℃ ID@TA=70℃ Rating Units - 20 V +12 V 3 -2.6 A 3 -2.1 A Continuous Drain Current Continuous Drain Current 1 IDM Pulsed Drain Current -10 A PD@TA=25℃ Total Power Dissipation 1.38 W Linear Derating Factor 0.01 W/℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice 3 Value Unit 90 ℃/W 1 200902046 AP2301GN-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Test Conditions Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Min. Typ. Max. Units VGS=0V, ID=-250uA -20 - - V VGS=-5V, ID=-2.8A - - 130 mΩ VGS=-2.8V, ID=-2.0A - - 190 mΩ -0.5 - -1.25 V VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA gfs Forward Transconductance VDS=-5V, ID=-2A - 4 - S IDSS Drain-Source Leakage Current VDS=-20V, VGS=0V - - -1 uA Drain-Source Leakage Current (Tj=70 C) VDS=-16V, VGS=0V - - -10 uA Gate-Source Leakage VGS=+12V, VDS=0V - - +100 nA ID=-2A - 5 9 nC o IGSS 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=-16V - 1 - nC Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 2 - nC VDS=-10V - 6 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=-1A - 17 - ns td(off) Turn-off Delay Time RG=3.3Ω,VGS=-10V - 16 - ns tf Fall Time RD=10Ω - 5 - ns Ciss Input Capacitance VGS=0V - 270 - pF Coss Output Capacitance VDS=-20V - 70 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 55 - pF Rg Gate Resistance f=1.0MHz - 10 15 Ω Min. Typ. - - -1 A - - -10 A - - -1.2 V Source-Drain Diode Symbol IS ISM VSD Parameter Test Conditions VD=VG=0V , VS=-1.2V Continuous Source Current ( Body Diode ) Pulsed Source Current ( Body Diode ) 1 2 Forward On Voltage Tj=25℃, IS=-1.6A, VGS=0V Max. Units Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board ; 270℃/W when mounted on min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP2301GN-HF 10 10 V GS = -5V o T A =25 C V GS = -5V T A =150 o C V GS = -4V 8 -ID , Drain Current (A) -ID , Drain Current (A) 8 V GS = -4V V GS = -3V 6 4 6 4 V GS = -2V V GS = -2V 2 V GS = -3V 2 0 0 0 1 2 3 4 5 6 0 1 -V DS , Drain-to-Source Voltage (V) 2 3 4 5 6 -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1.8 240 I D = -2A T A =25 ℃ I D = -2.8A V GS = -5V 1.6 Normalized RDS(ON) RDS(ON) (Ω ) 200 160 1.4 1.2 1 120 0.8 80 0.6 0 2 4 6 8 -50 10 Fig 3. On-Resistance v.s. Gate Voltage 50 100 150 Fig 4. Normalized On-Resistance 1.5 T j =150 o C Normalized -VGS(th) (V) 10 -IS(A) 0 T j , Junction Temperature ( o C) -V GS , Gate-to-Source Voltage (V) T j =25 o C 1 1.0 0.5 0.0 0 0.1 0.3 0.5 0.7 0.9 1.1 -V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.3 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP2301GN-HF f=1.0MHz 1000 4 I D = -2A V DS = -16V C iss 3 C (pF) -VGS , Gate to Source Voltage (V) 5 100 C oss C rss 2 1 0 10 0 1 2 3 4 5 1 6 5 Fig 7. Gate Charge Characteristics 13 17 21 25 Fig 8. Typical Capacitance Characteristics 100 Normalized Thermal Response (Rthja) 1 10 -ID (A) 9 -V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) 1ms 1 10ms 100ms 0.1 T A =25 °C Single Pulse 1s DC Duty factor=0.5 0.2 0.1 0.1 0.05 PDM t T 0.01 0.01 Duty factor = t/T Peak Tj = PDM x Rthja + T a Single Pulse Rthja = 270℃/W 0.001 0.01 0.1 1 10 100 0.0001 0.001 0.01 -V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area 0.1 1 10 100 1000 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG -4.5V QGS QGD 10% VGS td(on) tr Charge Q td(off) tf Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 4