AP9561GH

AP9561GH/J-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower On-resistance D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free BVDSS -40V RDS(ON) 16mΩ ID G -45A S Description AP9561 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-252 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance. The through-hole version (AP9561GJ) are available for low-profile applications. G G D S TO-252(H) D S TO-251(J) o Absolute Maximum Ratings@Tj=25 C(unless otherwise specified) Symbol Parameter . Rating Units VDS Drain-Source Voltage -40 V VGS Gate-Source Voltage +20 V ID@TC=25℃ Drain Current, VGS @ 10V -45 A ID@TC=100℃ Drain Current, VGS @ 10V -29 A -180 A 54.3 W 1 IDM Pulsed Drain Current PD@TC=25℃ Total Power Dissipation TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Value Units Rthj-c Maximum Thermal Resistance Junction-case 2.3 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount) 3 62.5 ℃/W Rthj-a Maximum Thermal Resistance Junction-ambient 110 ℃/W Data and specifications subject to change without notice 1 201410075 AP9561GH/J-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Test Conditions Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Min. Typ. Max. Units VGS=0V, ID=-250uA -40 - - V VGS=-10V, ID=-30A - - 16 mΩ VGS=-4.5V, ID=-20A - - 28 mΩ VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -1 - -3 V gfs Forward Transconductance VDS=-10V, ID=-20A - 33 - S IDSS Drain-Source Leakage Current VDS=-32V, VGS=0V - - -10 uA Drain-Source Leakage Current (T j=125 C) VDS=-32V, VGS=0V - - -250 uA Gate-Source Leakage VGS= +20V, VDS=0V - - +100 nA ID=-20A - 25 40 nC o IGSS 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=-32V - 4.4 - nC Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 18 - nC 2 td(on) Turn-on Delay Time VDS=-20V - 9 - ns tr Rise Time ID=-20A - 46 - ns td(off) Turn-off Delay Time RG=3.3Ω - 46 - ns tf Fall Time VGS=-10V - 95 - ns Ciss Input Capacitance VGS=0V - 1700 2720 pF Coss Output Capacitance VDS=-25V - 360 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 290 - pF Min. Typ. IS=-20A, VGS=0V - - -1.2 V . Source-Drain Diode Symbol Parameter 2 Test Conditions Max. Units VSD Forward On Voltage trr Reverse Recovery Time IS=-20A, VGS=0V, - 31 - ns Qrr Reverse Recovery Charge dI/dt=-100A/µs - 26 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in 2 copper pad of FR4 board THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP9561GH/J-HF 160 100 -10V -7.0 V -6.0 V TC=150oC -10V -7.0V -6.0V -5.0V 80 -ID , Drain Current (A) -ID , Drain Current (A) T C = 25 o C 120 -5.0 V 80 V G = - 4.0 V 60 V G = - 4.0 V 40 40 20 0 0 0 2 4 6 8 10 0 -V DS , Drain-to-Source Voltage (V) 2 4 6 8 10 -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 30 1.8 I D = -20 A T C =25 ℃ I D =-30A V G =-10V 1.6 22 . 18 Normalized RDS(ON) RDS(ON) (mΩ ) 26 1.4 1.2 1.0 14 0.8 0.6 10 2 4 6 8 10 -50 0 50 100 150 T j , Junction Temperature ( o C) -V GS , Gate-to-Source Voltage (V) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 30 2.2 2 T j =150 o C -VGS(th) (V) -IS(A) 20 T j =25 o C 1.8 1.6 1.4 10 1.2 1 0 0 0.2 0.4 0.6 0.8 1 1.2 -V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.4 -50 0 50 100 150 o T j , Junction Temperature ( C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP9561GH/J-HF f=1.0MHz 2400 10 2000 V DS =-32V I D =-20A C iss 1600 8 C (pF) -VGS , Gate to Source Voltage (V) 12 6 1200 4 800 2 400 C oss C rss 0 0 0 10 20 30 40 50 1 60 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) -V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1000 100 Operation in this area limited by RDS(ON) -ID (A) 100us . 10 1ms 10ms 100ms DC T C =25 o C Single Pulse Normalized Thermal Response (Rthjc) 1 Duty factor=0.5 0.2 0.1 0.1 0.05 PDM t 0.02 T 0.01 Duty factor = t/T Peak Tj = PDM x Rthjc + T C Single Pulse 0.01 1 0.1 1 10 100 0.00001 0.0001 -V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area 0.001 0.01 0.1 1 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG -4.5V QGS QGD 10% VGS td(on) tr td(off)tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4 AP9561GH/J-HF MARKING INFORMATION TO-251 9561GJ Part Number meet Rohs requirement for low voltage MOSFET only Package Code YWWSSS Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence TO-252 9561GH Part Number meet Rohs requirement for low voltage MOSFET only . Package Code YWWSSS Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence 5