AP9575GI

AP9575GI RoHS-compliant Product Advanced Power Electronics Corp. ▼ Lower Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching Characteristic G D S P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID TO-220CFM(I) -60V 70mΩ -16A Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220CFM isolation package is universally preferred for all commercial-industrial through hole applications. D G S Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating -60 ±20 -16 -10 -60 31.25 0.25 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 4.0 65 Units ℃/W ℃/W Data and specifications subject to change without notice 200515071-1/4 AP9575GI Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=-250uA VGS=-10V, ID=-10A VGS=-4.5V, ID=-8A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25oC) Drain-Source Leakage Current (Tj=150oC) Min. -60 -1 - Typ. 14 21 5 11 10 18 24 42 160 130 5 Max. Units 70 90 -3 -10 -25 ±100 34 8 V mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Ω VDS=VGS, ID=-250uA VDS=-10V, ID=-10A VDS=-60V, VGS=0V VDS=-48V, VGS=0V VGS= ±20V ID=-10A VDS=-50V VGS=-4.5V VDS=-30V ID=-10A RG=3.3Ω,VGS=-10V RD=3Ω VGS=0V VDS=-25V f=1.0MHz f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 1760 2800 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 2 Test Conditions IS=-10A, VGS=0V IS=-10A, VGS=0V, dI/dt=-100A/µs Min. - Typ. 46 100 Max. Units -1.3 V ns nC Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test THIS PRODUCT IS ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION. THIS PRODUCT HAS BEEN QUALIFIED FOR USE IN CONSUMER APPLICATIONS. APPLICATIONS OR USE IN LIFE SUPPORT OR OTHER SIMILAR MISSION-CRITICAL DEVICES OR SYSTEMS ARE NOT AUTHORIZED. 2/4 AP9575GI 50 50 T C = 25 o C 40 -10V - 7 .0V -5.0V -4.5V -ID , Drain Current (A) T C =150 o C 40 -10V -7.0V -5.0V -4.5V -ID , Drain Current (A) 30 30 20 20 V G = -3.0V 10 V G = -3.0 V 10 0 0 4 8 12 0 0 4 8 12 -V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 110 2.0 I D = -8 A T C =25 ℃ 1.6 90 I D = - 10 A V G = -10V Normalized RDS(ON) RDS(ON) (mΩ ) 1.2 70 0.8 50 0.4 2 4 6 8 10 -50 0 50 100 150 -V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.4 10 1.2 8 Normalized -VGS(th) (V) 1.0 -IS(A) 6 T j =150 o C 4 T j =25 o C 0.8 0.6 2 0.4 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0.2 -50 0 50 100 150 -V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3/4 AP9575GI f=1.0MHz 12 10000 -VGS , Gate to Source Voltage (V) V DS = - 50 V I D = - 10 A 9 1000 C iss 6 C (pF) 100 C oss C rss 3 0 0 10 20 30 40 10 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) -V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Normalized Thermal Response (Rthjc) Duty factor=0.5 100us 10 0.2 -ID (A) 1ms 10ms 100ms o 0.1 0.1 0.05 PDM 1 t 0.02 T Duty factor = t/T Peak Tj = PDM x Rthjc + T C Single Pulse T c =25 C Single Pulse 0 0.1 1 10 1s DC 0.01 0.01 100 0.00001 0.0001 0.001 0.01 0.1 1 10 -V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 30 V DS = -5V -ID , Drain Current (A) T j =25 o C T j =150 o C VG QG 20 -4.5V QGS QGD 10 Charge 0 0 2 4 6 Q -V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 4/4