• 型  号
  • 产品描述
IRF840图片

图片仅供参考

IRF840 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET - Advanced Power Electronics Corp.

型  号:
IRF840
大  小:
96.38KB 共4页
厂  商:
A-POWER[AdvancedPowerElectronicsCorp.]
主  页:
http://www.a-power.com.tw/
功能介绍:
IRF840 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET - Advanced Power Electronics Corp.
推荐单价:

¥1.5249

立即购买
IRF840 RoHS-compliant Product Advanced Power Electronics Corp. ▼ Ease of Paralleling ▼ Fast Switching Characteristic ▼ Simple Drive Requirement G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 500V 0.85Ω 8A S Description APEC MOSFET provide the power designer with the best combination of fast switching , lower on-resistance and reasonable cost. The TO-220 and package is universally preferred for all commercial-industrial applications. The device is suited for switch mode power supplies ,DC-AC converters and high current high speed switching circuits. G D S TO-220(P) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 Rating 500 ±20 8 5.1 32 125 1 2 Units V V A A A W W/ ℃ mJ A ℃ ℃ Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range 320 8 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 1.0 62 Unit ℃/W ℃/W 200430071-1/4 Data & specifications subject to change without notice IRF840 Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=125 C) o o o Test Conditions VGS=0V, ID=1mA VGS=10V, ID=4.8A VDS=VGS, ID=250uA VDS=10V, ID=4.8A VDS=500V, VGS=0V VDS=400V, VGS=0V VGS=±20V ID=8A VDS=400V VGS=10V VDD=250V ID=8A RG=9.1Ω,VGS=10V RD=31Ω VGS=0V VDS=25V f=1.0MHz f=1.0MHz Min. 500 2 - Typ. 4.2 45 7 25 12 31 48 33 270 85 1.6 Max. Units 0.85 4 25 250 ±100 72 2.4 V Ω V S uA uA nA nC nC nC ns ns ns ns pF pF pF Ω Gate-Source Leakage Total Gate Charge 3 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 3 1250 2000 Source-Drain Diode Symbol VSD Parameter Forward On Voltage 3 3 Test Conditions Tj=25℃, IS=8A, VGS=0V IS=8A, VGS=0V, dI/dt=100A/µs Min. - Typ. 515 8.6 Max. Units 1.5 V ns uC trr Qrr Notes: Reverse Recovery Time Reverse Recovery Charge 1.Pulse width limited by Max. junction temperature. o 2.Starting Tj=25 C , VDD=50V , L=10mH , RG=25Ω 3.Pulse test THIS PRODUCT IS ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION. THIS PRODUCT HAS BEEN QUALIFIED FOR USE IN CONSUMER APPLICATIONS. APPLICATIONS OR USE IN LIFE SUPPORT OR OTHER SIMILAR MISSION-CRITICAL DEVICES OR SYSTEMS ARE NOT AUTHORIZED. 2/4 IRF840 16 8 T C =25 C o 10V 7.0V ID , Drain Current (A) 6 T C =150 o C 10V 7 .0V 6 .0V 12 ID , Drain Current (A) 6.0V 8 5 .0 V 4 V G = 4. 5 V 2 4 5.0V V G =4.5V 0 0 4 8 12 16 20 24 0 0 4 8 12 16 20 24 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1.2 3 I D =4.8A V G =10V Normalized BVDSS (V) 1.1 Normalized RDS(ON) 2 1 1 0.9 0.8 -50 0 50 100 150 0 -50 0 50 100 150 T j , Junction Temperature ( C) o T j , Junction Temperature ( o C ) Fig 3. Normalized BVDSS v.s. Junction Temperature 10 1.4 Fig 4. Normalized On-Resistance v.s. Junction Temperature 8 1.2 T j = 150 o C 6 T j = 25 o C Normalized VGS(th) (V) 1 IS (A) 4 0.8 2 0.6 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0.4 -50 0 50 100 150 V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( C) o Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3/4 IRF840 f=1.0MHz 12 10000 I D =8A 10 VGS , Gate to Source Voltage (V) 8 V DS =100V V DS =250V V DS =400V C (pF) 1000 C iss 6 C oss 100 4 C rss 2 0 0 10 20 30 40 50 60 10 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 10 100us Normalized Thermal Response (Rthjc) Duty factor=0.5 0.2 ID (A) 0.1 1ms 1 0.1 0.05 PDM 10ms T c =25 C Single Pulse o t 0.02 0.01 T Duty factor = t/T Peak Tj = PDM x Rthjc + T C 100m 1s DC 100 1000 Single Pulse 0.1 1 10 0.01 0.00001 0.0001 0.001 0.01 0.1 1 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VDS 90% VG QG 10V QGS QGD 10% VGS td(on) tr td(off) tf Charge Q Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 4/4

大小:96.38KB

所需财富值1

更多
0

已有0人评价

浏览:14477

贡献者:foooy

贡献时间:2013年04月03日

文档关键词

相关推荐

热门文档

您最近浏览过的文档