5SDD08D5000

VRSM IFAVM IFRMS IFSM VF0 rF = 5200 V = 1028 A = 1614 A = 12.8×103 A = 0.894 V = 0.487 mΩ Rectifier Diode 5SDD 08D5000 Doc. No. 5SYA1165-00 Jan. 03 • Very low on-state losses • Optimum power handling capability Blocking Maximum rated values 1) Parameter Repetetive peak reverse voltage Characteristic values Symbol Conditions VRRM f = 50 Hz, tp = 10ms, Tj = -40...160°C f = 5 Hz, tp = 10ms, Tj = -40...160°C min typ Value 5000 5200 max 30 Unit V V Unit mA Non - repetetive peak reverse voltage VRSM Parameter Max. (reverse) leakage current Symbol Conditions IRRM VRRM, Tj = 160°C Mechanical data Maximum rated values 1) Parameter Mounting force Acceleration Acceleration Characteristic values Symbol Conditions FM a a Device unclamped Device clamped min 8 typ 10 max 12 50 100 Unit kN m/s m/s Unit kg mm mm mm mm 2 2 Parameter Weight Housing thickness Pole-piece diameter Surface creepage distance Symbol Conditions m H DP DS min typ 0.3 26 34 max 30 Air strike distance Da 18 1) Maximum rated values indicate limits beyond which damage to the device may occur ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. 5SDD 08D5000 On-state Maximum rated values 1) Parameter Max. average on-state current Max. peak non-repetitive surge current Limiting load integral Max. peak non-repetitive surge current Limiting load integral Characteristic values Symbol Conditions IFAVM 50 Hz, Half sine wave, TC = 85 °C min typ max 1028 1614 Unit A A A A2s A A2s Unit V V mΩ Max. RMS on-state current IFRMS IFSM I2t IFSM I2t Symbol Conditions VF V(T0) rT IF = 1500 A, Tj = 160°C Tj = 160°C IT = 1500...4500 A min typ tp = 8.3 ms, Tj = 160°C, VR = 0 V tp = 10 ms, Tj = 160°C, VR = 0 V 12.8×10 682×10 12×10 720×10 3 3 3 3 Parameter On-state voltage Threshold voltage Slope resistance max 1.65 0.894 0.487 Switching Characteristic values Parameter Symbol Conditions Qrr diF/dt = -30 A/µs, VR = 100 V min typ 2400 max 3500 Unit µAs Recovery charge IFRM = 1000 A, Tj = 160°C Thermal Maximum rated values 1) Parameter Operating junction temperature range Characteristic values Symbol Conditions Tvj min -40 -40 min typ max 160 160 Unit °C °C Unit K/kW K/kW K/kW K/kW K/kW Storage temperature range Tstg Parameter Symbol Conditions Double-side cooled Anode-side cooled Cathode-side cooled Double-side cooled Single-side cooled typ max 32 50 88 8 16 Thermal resistance junction Rth(j-c) to case Rth(j-c)A Rth(j-c)C Thermal resistance case to Rth(c-h) heatsink Rth(c-h) Analytical function for transient thermal impedance: ZthJC(t) = å Ri(1 - e -t/τ i ) i =1 i Ri(K/kW) τi(s) 1 11.600 0.7033 2 10.110 0.2185 3 7.870 0.0588 4 2.410 0.0042 Fig. 1 Transient thermal impedance junction-tocase. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1165-00 Jan. 03 page 2 of 5 n 5SDD 08D5000 7000 30 IFSM ( k A ) I FSM 25°C ò i2dt 25°C 1,6 i 2dt (106 A2s) IF ( A ) 25 °C 160 °C 6000 25 1,4 5000 20 160°C 1,2 4000 15 160 °C 1 3000 2000 10 0,8 1000 5 0,6 0 0 1 2 3 4 5 VF (V) 0 1 10 t ( ms ) 0,4 100 Fig. 2 Max. on-state characteristics. Fig. 3 Surge forward current vs. pulse length. Half sine wave, single pulse, VR = 0 V PT ( W ) 2500 PT ( W ) 2500 60° 120° 180° ψ = 30° 60° 90° 120° 180° 2000 2000 270° DC DC 1500 1500 1000 1000 500 500 0 0 200 400 600 800 1000 0 I FAV ( A ) 1200 0 200 400 600 800 1000 I FAV ( A ) 1200 Fig. 4 Forward power loss vs. average forward current, sine waveform, f = 50 Hz Fig. 5 Forward power loss vs. average forward current, square waveform, f = 50 Hz ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1165-00 Jan. 03 page 3 of 5 5SDD 08D5000 TC ( °C ) TC ( °C ) 170 160 150 140 130 120 110 100 90 80 70 60 0 200 400 600 170 160 150 140 130 120 110 DC 270° 180° DC 100 90 80 180° 60° 800 70 60 0 400 120° 1000 I FAV ( A ) 1200 ψ = 30° 60° 800 90° 120° I FAV ( A ) 1200 Fig. 6 Max. case temperature vs aver. forward current, sine waveform, f = 50 Hz 10000 Qrr ( µC ) Fig. 7 Max. case temperature vs aver. forward current, square waveform, f = 50 Hz 1000 IrrM ( A ) 100 max min 1000 max min 100 1 10 dI F /dt ( A/µs ) 100 10 1 10 dI F /dt ( A/µs ) 100 Fig. 8 Reverse recovery charge vs. dIF/dt, IF= 1000 A; Tj = Tjmax, limit values Fig. 9 Peak reverse recovery current vs. diF/dt, IF = 1000 A; Tj = Tjmax, limit values ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1165-00 Jan. 03 page 4 of 5 5SDD 08D5000 Fig. 10 Outline drawing. All dimensions are in millimeters and represent nominal values unless stated otherwise. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 abbsem@ch.abb.com www.abb.com/semiconductors Doc. No. 5SYA1165-00 Jan. 03