5SHX14H4510

VDRM ITGQM ITSM V(T0) rT VDC-link = = = = = = 4500 1100 8.8×103 1.65 1.2 2800 V A A V mΩ V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 14H4510 PRELIMINARY Doc. No. 5SYA1227-05 Aug 07 • High snubberless turn-off rating • Optimized for medium frequency ( 0.5 m/s) strong air cooling allows for increased ambient temperature Fig. 2 Max. turn-off current vs. frequency for lifetime operation ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1227-05 Aug 07 page 5 of 13 5SHX 14H4510 GCT Part Max. on-state characteristic model: Max. on-state characteristic model: VT25 = ATvj + BTvj ⋅ IT + CTvj ⋅ ln(IT + 1) + DTvj ⋅ IT A25 TBD IT [A] 2200 Tj = 115°C 2000 1800 1600 1400 1200 1000 800 600 400 200 0 1.5 2.5 3.5 4.5 VT [V] VT115 = ATvj + BTvj ⋅ IT + CTvj ⋅ ln(IT + 1) + DTvj ⋅ IT Valid for iT = TBD – TBD A A115 TBD B115 TBD C115 TBD D115 TBD Valid for iT = TBD – TBD A B25 C25 TBD TBD D25 TBD Fig. 3 GCT on-state voltage characteristics Fig. 4 GCT on-state voltage characteristics TBD TBD Fig. 5 GCT surge on-state current vs. pulse length, half-sine wave Fig. 6 GCT surge on-state current vs. number of pulses, half-sine wave, 10 ms, 50Hz ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1227-05 Aug 07 page 6 of 13 5SHX 14H4510 Eoff [J] Tj = 115°C 5 VD = 2700 V 4 3 2 1 0 0 200 400 600 800 1000 1200 ITGQ [A] Fig. 7 GCT turn-off energy per pulse vs. turn-off current Fig. 8 GCT Safe Operating Area ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1227-05 Aug 07 page 7 of 13 5SHX 14H4510 Diode Part Max. on-state characteristic model: Max. on-state characteristic model: VF25 = ATvj + BTvj ⋅ IT + CTvj ⋅ ln(IT + 1) + DTvj ⋅ IT A25 TBD IF [A] 2200 Tj = 115°C 2000 1800 1600 1400 1200 1000 800 600 400 200 0 3 4 5 6 7 8 9 10 VF [V] VF115 = ATvj + BTvj ⋅ IT + CTvj ⋅ ln(IT + 1) + DTvj ⋅ IT Valid for IT = TBD – TBD A A115 TBD B115 TBD C115 TBD D115 TBD Valid for IF = TBD – TBD A B25 C25 TBD TBD D25 TBD Fig. 9 Diode on-state voltage characteristics Fig. 10 Diode on-state voltage characteristics TBD TBD Fig. 11 Diode surge on-state current vs. pulse length, half-sine wave Fig. 12 Diode surge on-state current vs. number of pulses, half-sine wave, 10 ms, 50Hz ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1227-05 Aug 07 page 8 of 13 5SHX 14H4510 Err [J] 2.5 Tj = 115°C diF/dt = 360 A/µs VD = 2700 V 2.0 1.5 TBD 1.0 0.5 0.0 0 200 400 600 800 1000 1200 IFQ [A] Fig. 13 Upper scatter range of diode turn-off energy per pulse vs. turn-off current Fig. 14 Upper scatter range of diode turn-off energy per pulse vs decay rate of on-state current Irr [A] 500 Tj = 115°C diF/dt = 360 A/µs VD = 2700 V 450 TBD 400 350 300 0 200 400 600 800 1000 1200 IFQ [A] Fig. 15 Upper scatter range of diode reverse recovery charge vs decay rate of on-state current Fig. 16 Upper scatter range of diode reverse recovery current vs decay rate of on-state current ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1227-05 Aug 07 page 9 of 13 5SHX 14H4510 TBD Fig. 17 Diode Safe Operating Area Fig. 18 Max. Gate Unit input power in chopper mode TBD Fig. 19 Burst capability of Gate Unit ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1227-05 Aug 07 page 10 of 13 5SHX 14H4510 Fig. 20 Outline drawing; all dimensions are in millimeters and represent nominal values unless stated otherwise 1) VGIN (AC or DC+) 2) VGIN (AC or DC+) 3) Cathode 4) VGIN (AC or DC-) 5) VGIN (AC or DC-) Fig. 21 Detail A: pin out of supply connector X1. RC-IGCT Gate Unit Supply (VGIN) RC-GCT Anode Internal Supply (No galvanic isolation to power circuit) X1 LED1 LED2 LED3 LED4 TurnOn Circuit Rx Logic Monitoring Gate CS SF Command Signal (Light) Status Feedback (Light) Tx TurnOff Circuit Cathode Fig. 22 Block diagram ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1227-05 Aug 07 page 11 of 13 5SHX 14H4510 Turn-on dIT/dt ITM VD 0.9 VD External Retrigger pulse VDSP IT Turn-off VDM VD IT 0.4 ITGQ 0.1 VD VD CS CS CS SF tdon SF tdon tr SF tretrig SF tdoff SF tdoff ton toff Fig. 23 General current and voltage waveforms with IGCT-specific symbols VF(t), IF (t) dIF/dt VFR IF (t) -dIF/dt IF (t) Qrr VF (t) tfr tfr (typ) 10 µs IRM VR (t) VF (t) t Fig. 24 General current and voltage waveforms with Diode-specific symbols ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1227-05 Aug 07 page 12 of 13 5SHX 14H4510 Li LCL Rs DCL DUT GCT - part VDC CCL DUT Diode - part LLoad Fig. 25 Test circuit Related documents: 5SYA 2031 5SYA 2032 5SYA 2036 5SYA 2046 5SYA 2048 5SYA 2051 5SZK 9107 Applying IGCT Gate Units Applying IGCTs Recommendations regarding mechanical clamping of Press Pack High Power Semiconductors Failure rates of IGCTs due to cosmic rays Field measurements on High Power Press Pack Semiconductors Voltage ratings of high power semiconductors Specification of enviromental class for pressure contact IGCTs, OPERATION available on request, please contact factory Please refer to http://www.abb.com/semiconductors for current version of documents. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 abbsem@ch.abb.com www.abb.com/semiconductors Doc. No. 5SYA1227-05 Aug 07