5SLX12M3301

VRRM = IF = 3300 V 100 A Fast-Diode Die 5SLX 12M3301 Die size: 13.6 x 13.6 mm Doc. No. 5SYA1661-02 Feb. 05 • • • • Fast and soft reverse-recovery Low losses High SOA Passivation: SIPOS Nitride plus Polyimide Maximum rated values Parameter 1) Symbol VRRM IF IFRM Tvj Conditions min max 3300 100 Unit V A A °C Repetitive peak reverse voltage Continuous forward current Repetitive peak forward current Junction temperature 1) Limited by Tvjmax -40 200 125 Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 - 2 Diode characteristic values Parameter Continuous forward voltage Continuous reverse current Peak reverse recovery current Recovered charge Reverse recovery time Reverse recovery energy 2) 2) Symbol VF IR Irr Qrr trr Erec Conditions IF = 100 A VR = 3300 V Tvj = 25 °C Tvj = 125 °C Tvj = 25 °C Tvj = 125 °C Tvj = 25 °C IF = 100 A, VR = 1800 V, di/dt = 550 A/µs, Lσ = 1200 nH, Inductive load, Switch: 2x 5SMX12M3300 Tvj = 125 °C Tvj = 25 °C Tvj = 125 °C Tvj = 25 °C Tvj = 125 °C Tvj = 25 °C Tvj = 125 °C min 2.0 typ 2.3 2.35 5 2.5 115 140 65 110 470 800 85 145 max 2.7 Unit V V µA 7 mA A A µC µC ns ns mJ mJ Characteristic values according to IEC 60747 - 2 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. 5SLX 12M3301 200 175 250 VCC = 1800 V di/dt = 550 A/µs Tvj = 125 °C Lσ = 1200 nH Erec 150 25°C 200 125°C Erec [mJ], Q rr [µC], Irr [A] 150 125 IF [A] 100 75 50 100 Irr Qrr 50 25 0 0 0.5 1 1.5 2 VF [V] 2.5 3 3.5 4 0 0 50 100 IF [A] 150 200 250 Fig. 1 Typical diode forward characteristics Fig. 2 Typical reverse recovery characteristics vs. forward current 150 2100 200 175 VCC = 1800 V IF = 100 A Tvj = 125 °C Lσ = 1200 nH 400 350 300 250 Irr 200 Erec Qrr 150 100 50 0 0 200 400 600 di/dt [A/µs] 800 1000 1200 100 VCC = 1800 V IF = 100 A di/dt = 550 A/µs Tvj = 125 °C Lσ = 1200 nH 1400 150 700 50 0 0 100 75 -50 -700 50 -100 -1400 25 -150 0 2 4 time [us] 6 8 -2100 0 Fig. 3 Typical diode reverse recovery behaviour Fig. 4 Typical reverse recovery vs. di/dt ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1661-02 Feb. 05 page 2 of 3 Qrr [µC], Irr [A] 125 Erec [mJ] VR [V] IR [A] 5SLX 12M3301 Mechanical properties Parameter Overall die L x W Dimensions exposed LxW front metal thickness Metallization 3) 3) Unit 13.6 x 13.6 10.38 x 10.38 385 ± 15 AlSi1 Al / Ti / Ni / Ag 4 1.2 mm mm µm µm µm front (A) back (K) For assembly instructions refer to: IGBT and Diode chips from ABB Switzerland Ltd, Semiconductors, Doc. No. 5SYA 2033. Outline Drawing A (Anode) Note : All dimensions are shown in mm This product has been designed and qualified for Industrial Level. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 abbsem@ch.abb.com www.abb.com/semiconductors Doc. No. 5SYA1661-02 Feb. 05