5SMX12N4507

VCE IC = = 4500 V 40 A IGBT-Die 5SMX 12N4507 Die size: 14.3 x 14.3 mm Doc. No. 5SYA1626-03 July 06 • • • • Low loss, rugged SPT technology Smooth switching for good EMC Emitter metallisation optimized for press-pack packaging Passivation: SIPOS and Silicon Nitride plus Polyimide Maximum rated values Parameter Collector-emitter voltage DC collector current Peak collector current Gate-emitter voltage IGBT short circuit SOA Junction temperature 1) 1) Symbol Conditions VCES IC ICM VGES tpsc Tvj VCC = 3400 V, VCEM ≤ 4500 V VGE ≤ 15 V, Tvj ≤ 125 °C Limited by Tvjmax VGE = 0 V min max 4500 40 80 Unit V A A V µs °C -20 20 10 -40 125 Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 - 9 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. 5SMX 12N4507 IGBT characteristic values Parameter Collector (-emitter) breakdown voltage Collector-emitter saturation voltage Collector cut-off current Gate leakage current Gate-emitter threshold voltage Gate charge Input capacitance Output capacitance Reverse transfer capacitance Internal gate resistance Turn-on delay time Rise time Turn-off delay time Fall time 2) Symbol Conditions V(BR)CES VCE sat ICES IGES VGE(TO) Qge Cies Coes Cres RGint td(on) tr td(off) tf VCC = 2800 V, IC = 40 A, RG = 33 Ω, VGE = ±15 V, Lσ = 6000 nH, inductive load VCC = 2800 V, IC = 40 A, RG = 33 Ω, VGE = ±15 V, Lσ = 6000 nH, inductive load VCC = 2800 V, IC = 40 A, VGE = ±15 V, RG = 33 Ω, Lσ = 6000 nH, inductive load, FWD: ½ 5SLX12N4506 VCC = 2800 V, IC = 40 A, VGE = ±15 V, RG = 33 Ω, Lσ = 6000 nH, inductive load Tvj = 25 °C Tvj = 125 °C Tvj = 25 °C Tvj = 125 °C Tvj = 25 °C Tvj = 125 °C Tvj = 25 °C Tvj = 125 °C Tvj = 25 °C Tvj = 125 °C Tvj = 25 °C Tvj = 125 °C VGE = 0 V, IC = 1 mA, Tvj = 25 °C IC = 40 A, VGE = 15 V VCE = 4500 V, VGE = 0 V Tvj = 25 °C Tvj = 125 °C Tvj = 25 °C Tvj = 125 °C min 4500 typ max Unit V 3.0 4.0 100 2500 -500 5.5 500 7.45 0.28 0.07 5 160 155 100 105 630 715 425 455 55 500 7.5 V V µA µA nA V nC nF Ω ns ns ns ns VCE = 0 V, VGE = ±20 V, Tvj = 125 °C IC = 10 mA, VCE = VGE, Tvj = 25 °C IC = 40 A, VCE = 2800 V, VGE = -15 ..15 V VCE = 25 V, VGE = 0 V, f = 1 MHz, Tvj = 25 °C Turn-on switching energy Eon mJ 85 165 mJ 205 200 A Turn-off switching energy Eoff Short circuit current 2) ISC tpsc ≤ 10 μs, VGE = 15 V, Tvj = 125 °C, VCC = 3400 V, VCEM ≤ 4500 V Characteristic values according to IEC 60747 - 9 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1626-03 July 06 page 2 of 5 5SMX 12N4507 Mechanical properties Parameter Overall die L x W Dimensions exposed L x W (except gate pad) front metal gate pad thickness Metallization 3) 3) Unit 14.3 x 14.3 9.0 x 9.0 1.51 x 1.48 530 ± 20 AlSi1 + Al AlSi1 + TiNiAg 4+8 1.8 + 1.2 mm mm mm µm µm µm LxW front (E) back (C) For assembly instructions refer to : IGBT and Diode chips from ABB Switzerland Ltd, Semiconductors, Doc. No. 5SYA 2033. Outline drawing Note: all dimensions are shown in mm This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, Chap. IX. This product has been designed and qualified for Industrial Level. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1626-03 July 06 page 3 of 5 5SMX 12N4507 80 70 60 50 IC [A] 40 30 20 10 VGE = 15 V 0 0 1 2 3 4 5 6 7 VCE [V] IC [A] 25 °C 125 °C 80 VCE = 20 V 70 60 50 40 30 20 10 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 VGE [V] 125 °C 25 °C Fig. 1 Typical onstate characteristics Fig. 2 Typical transfer characteristics 0.4 0.35 0.3 0.25 Eon, E off [J] 0.2 0.15 Eon, Eoff [J] VCC = 2800 V RG = 33 ohm VGE = ±15 V Tvj = 125 °C Lσ = 6 µH 0.3 0.25 Eoff 0.2 Eoff 0.15 Eon 0.1 0.1 0.05 0 0 20 40 IC [A] Eon 0.05 VCC = 2800 V IC = 40 A VGE = ±15 V Tvj = 125 °C Lσ = 6 µH 0 50 100 150 200 250 0 60 80 100 RG [ohm] Fig. 3 Typical switching characteristics vs collector current Fig. 4 Typical switching characteristics vs gate resistor ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1626-03 July 06 page 4 of 5 5SMX 12N4507 20 10 Cies VGE = 0 V fOSC = 1 MHz VOSC = 50 mV VCC = 2800 V 15 VCC = 3400 V VGE [V] C [nF] 1 Coes 10 Cres 0.1 5 IC = 40 A Tvj = 25 °C 0 0.0 0.1 0.2 0.3 Qg [µC] 0.4 0.5 0.01 0 5 10 15 20 VCE [V] 25 30 35 Fig. 5 Typical gate charge characteristics Fig. 6 Typical capacitances vs collector-emitter voltage ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 abbsem@ch.abb.com www.abb.com/semiconductors Doc. No. 5SYA1626-03 July 06