5SNE0800M1701

VCE IC = = 1700 V 800 A ABB HiPakTM IGBT Module 5SNE 0800M170100 Doc. No. 5SYA1590-00 Oct 06 • Low-loss, rugged SPT chip-set • Smooth switching SPT chip-set for good EMC • Industry standard package • High power density • AlSiC base-plate for high power cycling capability • AlN substrate for low thermal resistance Maximum rated values Parameter Collector-emitter voltage DC collector current Peak collector current Gate-emitter voltage Total power dissipation DC forward current Peak forward current Surge current IGBT short circuit SOA Isolation voltage Junction temperature Junction operating temperature Case temperature Storage temperature Mounting torques 1) 2) 2) 1) Symbol VCES IC ICM VGES Ptot IF IFRM IFSM tpsc Visol Tvj Tvj(op) Tc Tstg Ms Mt1 Mt2 Conditions VGE = 0 V, Tvj ≥ 25 °C Tc = 80 °C tp = 1 ms, Tc = 80 °C min max 1700 800 1600 Unit V A A V W A A A µs V °C °C °C °C Nm -20 Tc = 25 °C, per switch (IGBT) 20 4800 800 1600 VR = 0 V, Tvj = 125 °C, tp = 10 ms, half-sinewave VCC = 1200 V, VCEM CHIP ≤ 1700 V VGE ≤ 15 V, Tvj ≤ 125 °C 1 min, f = 50 Hz -40 -40 -40 Base-heatsink, M6 screws Main terminals, M8 screws Auxiliary terminals, M4 screws 4 8 2 6600 10 4000 150 125 125 125 6 10 3 Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 For detailed mounting instructions refer to ABB document no. 5SYA 2039 - 01 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. 5SNE 0800M170100 IGBT characteristic values Parameter Collector (-emitter) breakdown voltage Collector-emitter 4) saturation voltage Collector cut-off current Gate leakage current Gate-emitter threshold voltage Gate charge Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time 3) Symbol V(BR)CES VCE sat ICES IGES VGE(TO) Qge Cies Coes Cres td(on) tr td(off) tf Conditions VGE = 0 V, IC = 10 mA, Tvj = 25 °C IC = 800 A, VGE = 15 V VCE = 1700 V, VGE = 0 V Tvj = 25 °C Tvj = 125 °C Tvj = 25 °C Tvj = 125 °C min 1700 2.0 2.3 typ max Unit V 2.3 2.6 2.6 2.9 4 40 V V mA mA nA V µC VCE = 0 V, VGE = ±20 V, Tvj = 125 °C IC = 80 mA, VCE = VGE, Tvj = 25 °C IC = 800 A, VCE = 900 V, VGE = -15 V .. 15 V VCE = 25 V, VGE = 0 V, f = 1 MHz, Tvj = 25 °C VCC = 900 V, IC = 800 A, RG = 1.2 Ω, VGE = ±15 V, Lσ = 80 nH, inductive load VCC = 900 V, IC = 800 A, RG = 1.8 Ω, VGE = ±15 V, Lσ = 80 nH, inductive load VCC = 900 V, IC = 800 A, VGE = ±15 V, RG = 1.2 Ω, Lσ = 80 nH, inductive load VCC = 900 V, IC = 800 A, VGE = ±15 V, RG = 1.8 Ω, Lσ = 80 nH, inductive load Tvj = 25 °C Tvj = 125 °C Tvj = 25 °C Tvj = 125 °C Tvj = 25 °C Tvj = 125 °C Tvj = 25 °C Tvj = 125 °C Tvj = 25 °C Tvj = 125 °C Tvj = 25 °C Tvj = 125 °C -500 4.5 7.3 76 7.3 3.2 485 485 165 170 790 875 160 185 160 500 6.5 nF ns ns ns ns Turn-on switching energy Eon mJ 250 220 mJ 300 3600 24 A nH mΩ Turn-off switching energy Short circuit current Module stray inductance Resistance, terminal-chip 3) 4) Eoff ISC Lσ CE RCC’+EE’ tpsc ≤ 10 μs, VGE = 15 V, Tvj = 125 °C, VCC = 1200 V, VCEM CHIP ≤ 1700 V Leg 1 Leg 1 TC = 25 °C TC = 125 °C 0.18 0.255 Characteristic values according to IEC 60747 – 9 Collector-emitter saturation voltage is given at chip level ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1590-00 Oct 06 page 2 of 9 5SNE 0800M170100 Diode characteristic values Parameter Forward voltage 6) 5) Symbol VF Irr Qrr trr Erec Lσ AE RAA’+CC’ Conditions IF = 800 A Tvj = 25 °C Tvj = 125 °C Tvj = 25 °C VCC = 900 V, IF = 800 A, VGE = ±15 V, RG = 1.2 Ω Lσ = 80 nH inductive load Tvj = 125 °C Tvj = 25 °C Tvj = 125 °C Tvj = 25 °C Tvj = 125 °C Tvj = 25 °C Tvj = 125 °C Leg 2 Leg 2 TC = 25 °C TC = 125 °C min typ 1.65 1.7 560 730 210 385 690 975 150 270 24 0.18 0.255 max 2.0 2.0 Unit V A µC ns mJ nH mΩ Reverse recovery current Recovered charge Reverse recovery time Reverse recovery energy Module stray inductance Resistance, terminal-chip 5) 6) Characteristic values according to IEC 60747 – 2 Forward voltage is given at chip level Thermal properties Parameter IGBT thermal resistance junction to case 7) Symbol Rth(j-c)IGBT Conditions min typ max Unit 0.021 K/W per switch 0.036 K/W 0.024 0.048 K/W K/W Diode thermal resistance junction to case IGBT thermal resistance case to heatsink Diode thermal resistance case to heatsink 2) 2) Rth(j-c)DIODE Rth(c-s)IGBT IGBT per switch, λ grease = 1W/m x K Rth(c-s)DIODE Diode per switch, λ grease = 1W/m x K 7) For detailed mounting instructions refer to ABB document no. 5SYA 2039 - 01 Mechanical properties Parameter Dimensions Clearance distance in air Surface creepage distance Mass 7) 7) Symbol LW da ds m x x Conditions min x typ x max Unit mm mm mm H Typical , see outline drawing according to IEC 60664-1 Term. to base: and EN 50124-1 Term. to term: according to IEC 60664-1 Term. to base: and EN 50124-1 Term. to term: 130 140 38 10 10 15 15 900 g Thermal and mechanical properties according to IEC 60747 – 15 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1590-00 Oct 06 page 3 of 9 5SNE 0800M170100 Electrical configuration Leg 1 E1 E1 Leg 2 C2 G1 C1 C1 E2 Outline drawing 2) E1 C2 C1 E2 E1 G1 C1 Note: all dimensions are shown in mm 2) For detailed mounting instructions refer to ABB document no. 5SYA 2039 - 01 This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, chap. IX. This product has been designed and qualified for industrial level. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1590-00 Oct 06 page 4 of 9 5SNE 0800M170100 1600 1400 1200 1000 IC [A] IC [A] 800 600 400 200 VGE = 15 V 0 0 1 2 VCE [V] 3 4 5 1600 VCE = 25 V 1400 25 °C 125 °C 1200 1000 800 600 400 200 0 0 1 2 3 4 5 6 7 8 9 10 11 12 VGE [V] 125 °C 25 °C Fig. 1 Typical on-state characteristics, chip level Fig. 2 Typical transfer characteristics, chip level 1600 17V 1400 1200 1000 IC [A] 800 600 400 200 Tvj = 25 °C 0 0 1 2 3 VCE [V] 4 5 6 15V 13V 11V 9V IC [A] 1600 17V 1400 1200 1000 800 600 400 200 Tvj = 125 °C 0 0 1 2 3 VCE [V] 4 5 6 15V 13V 11V 9V Fig. 3 Typical output characteristics, chip level Fig. 4 Typical output characteristics, chip level ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1590-00 Oct 06 page 5 of 9 5SNE 0800M170100 0.90 0.80 0.70 0.60 Eon, Eoff [J] 0.50 0.40 0.30 0.20 0.10 Esw [J] = 347 x 10 x I C + 280 x 10 x I C + 97.7 x 10 -9 2 -6 -3 2.0 VCC = 900 V VGE = ±15 V RGon = 1.2 ohm RGoff = 1.8 ohm Tvj = 125 °C Lσ = 80 nH Eon VCC = 900 V IC = 800 A VGE = ±15 V Tvj = 125 °C Lσ = 80 nH 1.5 Eon Eon, Eoff [J] Eoff 1.0 0.5 Eoff 0.00 0 400 800 IC [A] 1200 1600 0.0 0 5 10 15 20 25 RG [ohm] Fig. 5 Typical switching energies per pulse vs collector current Fig. 6 Typical switching energies per pulse vs gate resistor 10 10 VCC = 900 V IC = 800 A VGE = ±15 V Tvj = 125 °C Lσ = 80 nH td(on), tr, td(off), tf [µs] td(off) td(off) td(on), tr, td(off), tf [µs] 1 td(on) td(on) 1 tr tf 0.1 tr VCC = 900 V RGon = 1.2 ohm RGoff = 1.8 ohm VGE = ±15 V Tvj = 125 °C Lσ = 80 nH 0.1 400 800 IC [A] 1200 1600 0 5 10 15 20 tf 0.01 0 25 RG [ohm] Fig. 7 Typical switching times vs collector current Fig. 8 Typical switching times vs gate resistor ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1590-00 Oct 06 page 6 of 9 5SNE 0800M170100 100 Cies 20 VCC = 900 V 15 VCC = 1300 V VGE [V] VGE = 0V fOSC = 1 MHz VOSC = 50 mV 1 0 5 10 15 20 VCE [V] 25 30 35 0 0 1 2 3 Qg [µC] 4 5 6 C [nF] 10 Coes 10 Cres 5 IC = 800 A Tvj = 25 °C Fig. 9 Typical capacitances vs collector-emitter voltage Fig. 10 Typical gate charge characteristics 2.5 VCC ≤ 1200 V, Tvj = 125 °C VGE = ±15 V, RG = 1.8 ohm 2 1.5 ICpulse / IC 1 0.5 Chip Module 0 0 500 1000 VCE [V] 1500 2000 Fig. 11 Turn-off safe operating area (RBSOA) ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1590-00 Oct 06 page 7 of 9 5SNE 0800M170100 Erec [mJ] = -0.105 x 10-3 x I F2 + 352 x 10-3 x I F + 49 400 Irr 800 400 Irr 800 Erec [mJ], Qrr [µC] 300 Erec [mJ] Qrr 200 600 Irr [A], Qrr [µC] 300 Qrr RG = 1.5 ohm R G = 1.2 ohm 600 Erec 0 0 400 800 IF [A] 1200 1600 0 0 0 1 2 3 4 5 di/dt [kA/µs] R G = 2 2 o hm 100 VCC = 900 V VGE = ±15 V RG = 1.2 ohm Tvj = 125 °C Lσ = 80 nH Erec 200 100 R G = 8.2 ohm R G = 3.9 ohm 400 200 RG = 2.2 ohm 400 VCC = 900 V IF = 800 A Tvj = 125 °C Lσ = 80 nH 200 0 Fig. 12 Typical reverse recovery characteristics vs forward current Fig. 13 Typical reverse recovery characteristics vs di/dt 1600 1400 25°C 1200 125°C 1000 IF [A] 800 600 400 200 0 0 0.5 1 VF [V] 1.5 2 2.5 0 0 500 1000 VR [V] 1500 2000 IR [A] 1200 1600 VCC ≤ 1200 V di/dt ≤ 5 kA/µs Tvj = 125 °C 800 400 Fig. 14 Typical diode forward characteristics, chip level Fig. 15 Safe operating area diode (SOA) ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1590-00 Oct 06 page 8 of 9 Irr [A] 5SNE 0800M170100 0.1 Zth(j-c) Diode Analytical function for transient thermal impedance: Zth(j-c) [K/W] IGBT, DIODE Zth(j-c) IGBT 0.01 Z th (j-c) (t) = ∑ R i (1 - e -t/τ i ) i =1 2 3.6 20.3 5.78 29.6 i 1 15.2 202 25.3 210 3 1.49 2.01 2.6 7.01 4 0.74 0.52 2.52 1.49 IGBT n Ri(K/kW) τi(ms) Ri(K/kW) τi(ms) 0.001 0.0001 0.001 0.01 0.1 t [s] 1 10 Fig. 16 Thermal impedance vs time For detailed information refer to: • 5SYA 2042-02 Failure rates of HiPak modules due to cosmic rays • 5SYA 2043-01 Load – cycle capability of HiPaks • 5SZK 9120-00 Specification of environmental class for HiPak (available upon request) ABB Switzerland Ltd, Semiconductors reserves the right to change specifications witho ut notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 abbsem@ch.abb.com www.abb.com/semiconductors DIODE Doc. No. 5SYA1590-00 Oct 06