5STP06D2600

VDSM ITAVM ITRMS ITSM VT0 rT • • • • = = = = = = 2800 V 620 A 970 A 8000 A 0.92 V 0.780 mΩ Phase Control Thyristor 5STP 06D2800 Doc. No. 5SYA1020-04 Sep. 01 Patented free-floating silicon technology Low on-state and switching losses Designed for traction, energy and industrial applications Optimum power handling capability Blocking Part Number VDRM VRSM1 IDRM IRRM dV/dtcrit VRRM 5STP 06D2800 5STP 06D2600 5STP 06D2200 Conditions 2800 V 3000 V 2600 V 2800 V ≤ 100 mA ≤ 100 mA 1000 V/µs 2200 V 2400 V f = 50 Hz, tp = 10ms tp = 5ms, single pulse VDRM VRRM Tj = 125°C Exp. to 0.67 x VDRM, Tj = 125°C Mechanical data FM Mounting force nom. min. max. a Acceleration Device unclamped Device clamped m DS Da Weight Surface creepage distance Air strike distance 50 m/s2 100 m/s2 0.3 kg 25 mm 14 mm 10 kN 8 kN 12 kN ABB Semiconductors AG reserves the right to change specifications without notice. 5STP 06D2800 On-state ITAVM ITRMS ITSM It 2 Max. average on-state current Max. RMS on-state current Max. peak non-repetitive surge current Limiting load integral 620 A 970 A 8000 A 8500 A 2 2 Half sine wave, TC = 70°C tp = tp = 10 ms 8.3 ms 10 ms 8.3 ms 1000 A 333 - 1000 A Tj = 125°C Tj = 125°C After surge: VD = VR = 0V 320 kA s tp = 300 kA s tp = VT VT0 rT IH IL On-state voltage Threshold voltage Slope resistance Holding current 1.70 V 0.92 V 0.780 mΩ 20-70 mA 10-50 mA IT = IT = Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Latching current 80-500 mA 50-200 mA Switching di/dtcrit Critical rate of rise of on-state current 150 A/µs 300 A/µs Cont. f = 50 Hz VD ≤ 0.67⋅VDRM , Tj = 125°C 60 sec. f = 50Hz VD = 0.4⋅VDRM ITRM = 1500 A IFG = 2 A, tr = 0.5 µs IFG = 2 A, tr = 0.5 µs td tq Qrr Delay time Turn-off time ≤ ≤ min max 3.0 µs 400 µs VD ≤ 0.67⋅VDRM ITRM = 1500 A, Tj = 125°C dvD/dt = 20V/µs VR > 200 V, diT/dt = -20 A/µs Recovery charge 1500 µAs 3200 µAs Triggering VGT IGT VGD IGD VFGM IFGM VRGM PG Gate trigger voltage Gate trigger current Gate non-trigger voltage Gate non-trigger current Peak forward gate voltage Peak forward gate current Peak reverse gate voltage Gate power loss 2.6 V 400 mA 0.3 V 10 mA 12 V 10 A 10 V 3W Tj = 25° Tj = 25° VD =0.4 x VDRM VD = 0.4 x VDRM ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1020-04 Sep. 01 page 2 of 5 5STP 06D2800 Thermal Tjmax Tstg RthJC Max. operating junction temperature range Storage temperature range Thermal resistance junction to case 125 °C -40…140 °C 70 K/kW 74 K/kW 36 K/kW RthCH Thermal resistance case to heat sink Analytical function for transient thermal impedance: Anode side cooled Cathode side cooled Double side cooled Single side cooled Double side cooled 15 K/kW 7.5 K/kW ZthJC(t) = å Ri(1 - e -t/τ i ) i =1 i Ri(K/kW) τi(s) 1 19.18 0.3862 2 9.82 0.0561 3 5.45 0.0058 4 1.44 0.0024 Fig. 1 Transient thermal impedance junction to case. n Fig. 2 On-state characteristics. Fig. 3 On-state characteristics. Tj=125°C, 10ms half sine ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1020-04 Sep. 01 page 3 of 5 5STP 06D2800 Fig. 4 On-state power dissipation vs. mean onstate current. Turn - on losses excluded. Fig. 5 Max. permissible case temperature vs. mean on-state current. Fig. 6 Surge on-state current vs. pulse length. Half-sine wave. Fig. 7 Surge on-state current vs. number of pulses. Half-sine wave, 10 ms, 50Hz. ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1020-04 Sep. 01 page 4 of 5 5STP 06D2800 Fig. 8 Gate trigger characteristics. Fig. 9 Max. peak gate power loss. Fig. 10 Recovery charge vs. decay rate of onstate current. Fig. 11 Peak reverse recovery current vs. decay rate of on-state current. ABB Semiconductors AG reserves the right to change specifications without notice. ABB Semiconductors AG Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)62 888 6419 +41 (0)62 888 6306 abbsem@ch.abb.com www.abbsem.com Doc. No. 5SYA1020-04 Sep. 01