5STP18H3600

VDSM ITAVM ITRMS ITSM VT0 rT = = = = = = 4200 V 2075 A 3260 A 32000 A 0.96 V 0.285 mΩ Phase Control Thyristor 5STP 18H4200 Doc. No. 5SYA1046-02 Jan. 02 • • • • • Patented free-floating silicon technology Low on-state and switching losses Designed for traction, energy and industrial applications Optimum power handling capability Interdigitated amplifying gate Blocking Maximum rated values 1) Symbol VDRM, VRRM VRSM1 dV/dtcrit Parameter Conditions f = 50 Hz, tp = 10ms tp = 5ms, single pulse Exp. to 0.67 x VDRM, Tj = 125°C 5STP 18H4200 5STP 18H4000 5STP 18H3600 4200 V 4600 V 4000 V 4400 V 1000 V/µs min typ max 300 300 Unit mA mA 3600 V 4000 V Characteristic values Symbol Conditions IDRM IRRM VDRM, Tj = 125°C VRRM, Tj = 125°C Forwarde leakage current Reverse leakage current Mechanical data Maximum rated values 1) Parameter Mounting force Acceleration Acceleration Characteristic values Symbol Conditions FM a a Device unclamped Device clamped min 45 typ 50 max 60 50 100 Unit kN m/s m/s Unit kg mm mm 2 2 Parameter Weight Surface creepage distance Air strike distance Symbol Conditions m DS Da min 36 15 typ 0.9 max 1) Maximum Ratings are those values beyond which damage to the device may occur ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. 5STP 18H4200 On-state Maximum rated values 1) Parameter Max. average on-state current RMS on-state current Max. peak non-repetitive surge current Limiting load integral Max. peak non-repetitive surge current Limiting load integral Characteristic values Symbol Conditions ITAVM ITRMS ITSM I2t ITSM I2t tp = 10 ms, Tj = 125°C, VD=VR = 0 V tp = 8.3 ms, Tj = 125°C, VD=VR=0 V Half sine wave, Tc = 70°C min typ max 2075 3260 32000 5120 35000 5000 Unit A A A kA2s A kA2s Unit V V mΩ mA mA mA mA Parameter On-state voltage Threshold voltage Slope resistance Holding current Latching current Symbol Conditions VT VT0 rT IH IL IT = 2000 A, Tj= 125°C IT = 1000 A - 3000 A, Tj= 125°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C min typ max 1.53 0.96 0.285 80 60 600 200 Switching Maximum rated values 1) Parameter Critical rate of rise of onstate current Critical rate of rise of onstate current Symbol Conditions di/dtcrit di/dtcrit Cont. Tj = 125°C, ITRM = 3000 A, f = 50 Hz VD ≤ 0.67⋅VDRM, Cont. IFG = 2 A, tr = 0.5 µs f = 1Hz Tj = 125°C, ITRM = 3000 A, VR = 200 V, diT/dt = -5 A/µs, VD ≤ 0.67⋅VDRM, dvD/dt = 20 V/µs, min typ max 200 1000 Unit A/µs A/µs µs Circuit-commutated turn-off tq time Characteristic values 600 Parameter Recovery charge Delay time Symbol Conditions Qrr td Tj = 125°C, ITRM = 3000 A, VR = 200 V, diT/dt = -5 A/µs VD = 0.4⋅VDRM, IFG = 2 A, tr = 0.5 µs min 3500 typ max 5500 3 Unit µAs µs ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1046-02 Jan. 02 page 2 of 6 5STP 18H4200 Triggering Maximum rated values 1) Parameter Peak forward gate voltage Peak forward gate current Peak reverse gate voltage Gate power loss Average gate power loss Characteristic values Symbol Conditions VFGM IFGM VRGM PG PGAV Symbol Conditions VGT IGT VGD IGD Tj = 25°C Tj = 25°C VD = 0.4 x VDRM, Tvjmax = 125°C VD = 0.4 x VDRM, Tvjmax = 125°C For DC gate current min typ max 12 10 10 3 Unit V A V W see Fig. 9 min typ max 2.6 400 0.3 10 Unit V mA V mA Parameter Gate trigger voltage Gate trigger current Gate non-trigger voltage Gate non-trigger current Thermal Maximum rated values 1) Parameter Operating junction temperature range Characteristic values Symbol Conditions Tj min typ max 125 Unit °C °C Unit K/kW K/kW K/kW K/kW K/kW Storage temperature range Tstg Parameter Symbol Conditions Double side cooled Anode side cooled Cathode side cooled Double side cooled Single side cooled -40 min typ 140 max 10 20 20 2 4 Thermal resistance junction Rth(j-c) to case Rth(j-c)A Rth(j-c)C Thermal resistance case to Rth(c-h) heatsink Rth(c-h) Analytical function for transient thermal impedance: ZthJC(t) = å Ri(1 - e -t/τ i ) i =1 i Ri(K/kW) τi(s) 1 6.52 0.4562 2 1.55 0.0792 3 1.67 0.0088 4 0.49 0.0037 Fig. 1 Transient thermal impedance junction-to case. n ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1046-02 Jan. 02 page 3 of 6 5STP 18H4200 Fig. 2 On-state characteristics. Fig. 3 On-state characteristics. Tj=125°C, 10ms half sine Fig. 4 On-state power dissipation vs. mean onstate current. Turn - on losses excluded. Fig. 5 Max. permissible case temperature vs. mean on-state current. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1046-02 Jan. 02 page 4 of 6 5STP 18H4200 Fig. 6 Surge on-state current vs. pulse length. Halfsine wave. IG (t) 100 % 90 % IGM IGM IGon diG/dt tr tp(IGM) ≈ 2..5 A ≥ 1.5 IGT ≥ 2 A/µs ≤ 1 µs ≈ 5...20µs Fig. 7 Surge on-state current vs. number of pulses. Half-sine wave, 10 ms, 50Hz. diG/dt 10 % tr tp (IGM) tp (IGon) t IGon Fig. 8 Recommendet gate current waveform. Fig. 9 Max. peak gate power loss. Fig. 10 Recovery charge vs. decay rate of on-state current. Fig. 11 Peak reverse recovery current vs. decay rate of on-state current. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1046-02 Jan. 02 page 5 of 6 5STP 18H4200 Fig. 12 Device Outline Drawing. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 abbsem@ch.abb.com www.abbsem.com Doc. No. 5SYA1046-02 Jan. 02