5STP20F1201

VDRM IT(AV)M IT(RMS) ITSM V(T0) rT = = = = = = 1600 1901 2987 27.3×103 0.948 0.152 V A A A V mΩ Phase Control Thyristor 5STP 20F1601 Doc. No. 5SYA1061-01 March 05 • • • Low on-state and switching losses Designed for traction, energy and industrial applications Optimum power handling capability Blocking Maximum rated values 1) Symbol VDRM, VRRM dV/dtcrit Parameter Conditions f = 50 Hz, tp = 10 ms Exp. to 1070 V, Tvj = 125°C Symbol Conditions IDRM IRRM 5STP 20F1601 1600 V 5STP 20F1401 1400 V 1000 V/µs min typ 5STP 20F1201 1200 V Characteristic values max 150 150 Unit mA mA Forward leakage current Reverse leakage current VDRM, Tvj = 125°C VRRM, Tvj = 125°C Mechanical data Maximum rated values 1) Parameter Mounting force Acceleration Acceleration Characteristic values Symbol Conditions FM a a Device unclamped Device clamped min 20 typ 22 max 24 50 100 Unit kN m/s m/s Unit kg mm mm 2 2 Parameter W eight Surface creepage distance Symbol Conditions m DS min 25 typ max 0.48 Air strike distance Da 13 1) Maximum rated values indicate limits beyond which damage to the device may occur ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. 5STP 20F1601 On-state Maximum rated values 1) Parameter Average on-state current RMS on-state current Peak non-repetitive surge current Limiting load integral Peak non-repetitive surge current Limiting load integral Characteristic values Symbol Conditions IT(AV)M IT(RMS) ITSM I2t ITSM I2t tp = 10 ms, Tvj = 125 °C, VD = VR = 0 V tp = 8.3 ms, Tvj = 125 °C, VD = VR = 0 V Half sine wave, Tc = 70 °C, f = 50 Hz min typ max 1901 2987 27.3×10 3.73×10 29.2×10 3.54×10 3 Unit A A A A2s A A2s Unit V V mΩ mA mA mA mA 6 3 6 Parameter On-state voltage Threshold voltage Slope resistance Holding current Latching current Symbol Conditions VT V(T0) rT IH IL Tvj = 25 °C Tvj = 125 °C Tvj = 25 °C Tvj = 125 °C IT = 2000 A, Tvj = 125 °C IT = 2000 A - 8000 A, Tvj= 125 °C min typ max 1.25 0.948 0.152 170 90 450 350 Switching Maximum rated values 1) Parameter Critical rate of rise of onstate current Critical rate of rise of onstate current Symbol Conditions di/dtcrit di/dtcrit Tvj = 125 °C, IT = IT(AV), VD ≤ 1070 V, IFG = 2 A, tr = 0.3 µs Cont. f = 50 Hz Cont. f = 1 Hz min typ max 200 1000 Unit A/µs A/µs µs Circuit-commutated turn-off tq time Characteristic values Tvj = 125°C, ITRM = 2000 A, VR = 200 V, diT/dt = -12.5 A/µs, VD ≤ 0.67⋅VDRM, dvD/dt = 50V/µs min 150 Parameter Recovery charge Symbol Conditions Qrr Tvj = 125°C, ITRM = 2000 A, VR = 200 V, diT/dt = -12.5 A/µs VD = 0.4⋅VRM, IFG = 2 A, tr = 0.3 µs, Tvj = 25 °C typ 2200 max Unit µAs Gate turn-on delay time tgd 2 µs ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1061-01 March 05 page 2 of 6 5STP 20F1601 Triggering Maximum rated values 1) Parameter Peak forward gate voltage Peak forward gate current Peak reverse gate voltage Mean forward gate power Characteristic values Symbol Conditions VFGM IFGM VRGM PG(AV) Symbol Conditions VGT Tvj = -40 °C Tvj = 25 °C Tvj = 125 °C min typ max 12 10 10 3 Unit V A V W Unit V Parameter Gate-trigger voltage min typ max 4 3 0.25 2 500 250 mA Gate-trigger current IGT Tvj = -40 °C Tvj = 25 °C Tvj = 125 °C 10 150 Thermal Maximum rated values 1) Parameter Operating junction temperature range Characteristic values Symbol Conditions Tvj min -40 -40 min typ max 125 125 Unit °C °C Unit K/kW K/kW K/kW K/kW K/kW Storage temperature range Tstg Parameter Symbol Conditions Double-side cooled Fm = 20...24 kN Anode-side cooled Fm = 20...24 kN Cathode-side cooled Fm = 20...24 kN Double-side cooled Fm = 20...24 kN Single-side cooled Fm = 20...24 kN typ max 16 25 45 4 8 Thermal resistance junction Rth(j-c) to case Rth(j-c)A Rth(j-c)C Thermal resistance case to Rth(c-h) heatsink Rth(c-h) Analytical function for transient thermal impedance: Zth(j-c) (t) = ∑ R th i (1 - e-t/τ i ) i =1 i Rth i(K/kW) τi(s) 1 5.500 0.4653 2 7.240 0.1533 3 2.000 0.0375 4 1.340 0.0034 Fig. 1 Transient thermal impedance junction-to case. n ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1061-01 March 05 page 3 of 6 5STP 20F1601 IT ( A ) 25°C 10000 9000 8000 7000 6000 5000 4000 3000 2000 125°C I TSM 40 2 ∫i dt 5 35 4,5 30 4 25 3,5 20 1000 0 0 0,5 1 1,5 2 2,5 3 VT ( V ) 15 1 10 t ( ms ) 3 2,5 100 Fig. 2 Max. on-state voltage characteristics 7 Fig. 3 Surge forward current vs. pulse length. Half sine wave, single pulse, VR = 0 V VG ( V ) 14 V FGM VG ( V ) 6 DC = P GAVm 12 5 -40 °C 10 500µs 1ms 4 +25 °C 8 2 IGTmin +125 °C 4 1 V GTmin 2 10ms DC = P GAVm 0 0 0 0,5 1 0 IG ( A ) 2 4 6 8 10 IFGM 3 6 12 IG ( A ) Fig. 4 Gate trigger characteristics Fig. 5 Gate trigger characteristics ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1061-01 March 05 page 4 of 6 i 2dt (106 A2s ) ITS M ( k A ) 11000 45 5,5 5STP 20F1601 PT ( W ) PT ( W ) 3500 ψ = 30° 60° 90° 120° 180° DC 3500 ψ = 30° 60° 90° 120° 180° 270° DC 3000 3000 2500 2500 2000 2000 1500 1500 1000 1000 500 500 0 0 400 800 1200 1600 2000 2400 0 0 400 800 1200 1600 2000 2400 I TAV ( A ) I TAV ( A ) Fig. 6 Forward power loss vs. average forward current, sine waveform, f = 50 Hz, T = 1/f TC ( °C ) 130 Fig. 7 Forward power loss vs. average forward current, square waveform, f = 50 Hz, T = 1/f TC ( °C ) 130 120 120 110 110 100 100 90 90 80 80 70 DC DC 70 270° 60 0 400 ψ = 30° 60° 800 1200 90° 120° 180° 1600 2000 2400 60 0 400 ψ = 30° 60°90° 120° 180° 800 1200 1600 2000 2400 I TAV ( A ) I TAV ( A ) Fig. 8 Max. case temperature vs.average forward current, sine waveform, f = 50Hz, T = 1/f Fig. 9 Max. case temperature vs.average forward current, square waveform, f = 50Hz, T = 1/f ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1061-01 March 05 page 5 of 6 5STP 20F1601 RED WHITE Fig. 10 Device Outline Drawing. Related application notes: Doc. Nr 5SYA2020 5SYA2034 5SYA 2036 Titel Design of RC-Snubber for Phase Control Applications Gate-drive Recommendations for PCT's Recommendations regarding mechanical clamping of Press Pack High Power Semiconductors Please refer to http://www.abb.com/semiconductors for actual versions. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 abbsem@ch.abb.com www.abb.com/semiconductors Doc. No. 5SYA1061-01 March 05