1N648-1

FEATURES 1N648-1 • • • • • 1N648-1 SILICON RECTIFIER METALLURGICALLY BONDED HERMETICALLY SEALED DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS AT 25 °C Operating Temperature: Storage Temperature: Surge Current A, sine 8.3mS: Total Power Dissipation: Operating Current: -65°C to +175°C -65°C to +175°C 5.0A 500mW 400mA, TA= +25°C Operating Current: Derating Factor: Derating Factor: 150mA, TA= +150°C 2mA/°C above +25°C 6mA/°C above +150°C D.C. Reverse Voltage (VRWM): 500V DC ELECTRICAL CHARACTERISTICS VF IR Ambient (°C) IF mA Min V Max V Ambient (°C) VR V (dc) Min µA Max µA 25 400 0.80 1.00 25 25 500 600 - 0.050 50 DESIGN DATA Case: Hermetically sealed glass package AC ELECTRICAL CHARACTERISTICS AT 25°C Lead Material: Copper clad steel Symbol Min Max pF - 20 Lead Finish: Tin/Lead Marking: Blue body coat, Black digits. Capacitance @ VR = 4V Polarity: Cathode end is banded. IRELAND - GORT ROAD, ENNIS, CO. CLARE PHONE: TOLL FREE: FAX: WWW.MICROSEMI.COM +353 65 6840044 +186 62 702434 +353 65 6822298 U.S.A. DOMESTIC SALES CONTACT PHONE: TOLL FREE: (617) 926 0404 1 800 666 2999