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2N2605

2N2605

  • 厂商:

    ACTEL(微芯科技)

  • 封装:

    TO-206AB

  • 描述:

    TRANS PNP 60V 0.03A TO-46

  • 数据手册
  • 价格&库存
2N2605 数据手册
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 PNP SILICON LOW POWER TRANSISTOR Qualified per MIL-PRF-19500/354 DEVICES LEVELS 2N2604 2N2605 2N2604UB 2N2605UB JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Symbol 2N2604 2N2605 Unit 80 70 Vdc Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO 60 Vdc Emitter-Base Voltage VEBO 6.0 Vdc IC 30 mAdc PT 400 mW/°C TJ, Tstg -65 to +200 °C Collector Current Total Power Dissipation @ TA = +25°C (1) Operating & Storage Junction Temperature Range THERMAL CHARACTERISTICS TO-46 (TO-206AB) Parameters / Test Conditions Symbol Thermal Resistance, Junction-to-Ambient UB Max. Unit 437 RθJA °C/mW 275 Note: 1/ Consult 19500/354 for thermal curves ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions OFF CHARACTERTICS Collector-Base Cutoff Current VCB = 80V dc 2N2604, UB VCB = 70V dc 2N2605, UB VCB = 50V dc 2N2604, 2N2605, UB VCB = 50V dc, TA = +150°C 2N2604, 2N2605, UB Collector-Emitter Breakdown Current IC = 10mAdc Symbol Min. ICBO 10.0 10.0 10.0 5.0 uAdc nAdc uAdc uAdc 60 Vdc V(BR)CEO Max. Unit Emitter-Base Cutoff Current VEB = 6.0Vdc VEB = 5.0Vdc IEBO 10.0 2.0 uAdc ηAdc Collector-Emitter Cutoff Current VCE = 50Vdc ICES 10 ηAdc T4-LDS-0092 Rev. 2 (101320) UB Package Page 1 of 4 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) (CONT.) Parameters / Test Conditions ON CHARACTERTICS (2) Forward-Current Transfer Ratio IC = 10μAdc, VCE = 5.0Vdc IC = 500μAdc, VCE = 5.0Vdc Symbol 2N2604, UB 2N2605, UB 2N2604, UB 2N2605, UB hFE Min. Max. 40 100 120 300 60 150 180 450 160 400 IC = 10mAdc, VCE = 5.0Vdc 2N2604, UB 2N2605, UB 40 100 IC = 10mAdc, VCE = 5.0Vdc, TA = -55°C 2N2604, UB 2N2605, UB 15 30 Collector-Emitter Saturation Voltage IC = 10mAdc, IB = 500μAdc VCE(sat) Base-Emitter Saturation Voltage IC = 10mA, IB = 500μAdc VBE(sat) Unit 0.3 Vdc 0.7 0.9 Vdc Symbol Min. Max. Unit 2N2604, UB 2N2605, UB hie 1.0 2.0 10 20 kΩ Small-Signal Open-Circuit Forward Current Output Admittance IC = 1.0mAdc, VCE = 5.0Vdc, f = 1.0kHz 2N2604, UB 2N2605, UB hoe 40 60 μmhos Small-Signal Short-Circuit Forward Current Transfer Ratio IC = 1.0mAdc, VCE = 5.0Vdc, f = 1.0kHz 2N2604, UB 2N2605, UB hfe 60 150 180 450 Magnitude of Small-Signal Forward Current Transfer Ratio IC = 0.5mAdc, VCE = 5.0Vdc, f = 30MHz |hfe| 1.0 8.0 Output Capacitance VCB = 5.0Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0MHz Cobo 6.0 pF F1 F2 F3 5.0 3.0 3.0 dB DYNAMIC CHARACTERISTICS Parameters / Test Conditions Small-Signal Short-Circuit Input Impedance IC = 1.0mAdc, VCB = 5.0Vdc, f = 1.0kHz Noise Figure VCE = 5.0Vdc, IC = 10μAdc, Rg = 10kΩ, f = 100Hz VCE = 5.0Vdc, IC = 10μAdc, Rg = 10kΩ, f = 1.0kHz VCE = 5.0Vdc, IC = 10μAdc, Rg = 10kΩ, f = 10kHz (2) Pulse Test: Pulse Width = 300μs, Duty Cycle ≤ 2.0% T4-LDS-0092 Rev. 2 (101320) Page 2 of 4 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 PACKAGE DIMENSIONS Symbol CD CH HD LC LD LL LU L1 L2 Q TL TW r α Dimensions Inches Millimeters Min Max Min Max .178 .195 4.52 4.95 .065 .085 1.65 2.16 .209 .230 5.31 5.84 .100 TP 2.54 TP .016 .021 0.41 0.53 .500 1.750 12.70 44.45 .016 .019 0.41 0.48 .050 1.27 .250 6.35 .040 1.02 .028 .048 0.71 1.22 .036 .046 0.91 1.17 .010 0.25 45° TP 45° TP Note 5 6 6 6 6 6 4 3, 8 3, 8 9 5 NOTES: 1. 2. 3. 4. 5. Dimensions are in inches. Lead 1 is emitter, lead 2 is base, and lead 3 is collector. Millimeters are given for general information only. Symbol TL is measured from HD maximum. Details of outline in this zone are optional. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. The device may be measured by direct methods or by the gauge and gauging procedure. 6. Symbol LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum. 7. Lead number three is electrically connected to case. 8. Beyond r maximum, TW shall be held for a minimum length of .011 inch (0.28 mm). 9. Symbol r applied to both inside corners of tab. 10. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology. FIGURE 1. Physical dimensions - (TO-46). T4-LDS-0092 Rev. 2 (101320) Page 3 of 4 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 PACKAGE DIMENSIONS Symbol BH BL BW CL CW LL1 LL2 Dimensions Inches Millimeters Min Max Min Max .046 .056 1.17 1.42 .115 .128 2.92 3.25 .085 .108 2.16 2.74 .128 3.25 .108 2.74 .022 .038 0.56 0.97 .017 .035 0.43 0.89 Dimensions Notes Symbol LS1 LS2 LW r r1 r2 Inches Min Max .035 .039 .071 .079 .016 .024 .008 .012 .022 Millimeters Min Max 0.89 0.99 1.80 2.01 0.41 0.61 0.20 0.31 0.56 Notes NOTES: 1. 2. 3. 4. 5. Dimensions are in inches. Millimeters are given for general information only. Hatched areas on package denote metallized areas Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Pad 4 = Shielding connected to the lid. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology. FIGURE 2. Physical dimensions, surface mount (UB version). T4-LDS-0092 Rev. 2 (101320) Page 4 of 4
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