2N6317

2N6317 and 2N6318 PNP SILICON POWER TRANSISTOR Available DESCRIPTION These 2N6317 and 2N6318 devices are an excellent choice for un-tuned amplifier applications. It is also ideal for general purpose power switch and amplifier applications. Microsemi also offers numerous other products to meet higher and lower power voltage regulation applications. TO-213AA (TO-66) Package Important: For the latest information, visit our website http://www.microsemi.com. FEATURES • • • Hermetically sealed. Complimentary pairing with the NPN 2N6315 and 2N6316. RoHS compliant versions available. APPLICATIONS / BENEFITS • • • Convenient package. Mechanically rugged. Commercial, industrial, and military uses. MAXIMUM RATINGS @ 25 ºC unless otherwise stated Parameters/Test Conditions Junction and Storage Temperature (1) Thermal Resistance Junction-to-Lead Collector-Base Voltage Emitter-Base Voltage Collector-Emitter Voltage Continuous Operating Collector Current Continuous Base Current (2) Total Power Dissipation 2N6317 2N6318 2N6317 2N6318 Symbol TJ and TSTG RӨJL VCBO VEBO VCEO IC PT Value -65 to +200 235 60 80 5 60 80 7 2 90 NOTES: 1. At 1/8 inch from case for 10 seconds. 2. Derate linearly at 0.515 W/ºC. T4-LDS-0283, Rev. 1 (121659) Unit o C o C V V V A A W MSC – Lawrence 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 or (978) 620-2600 Fax: (978) 689-0803 MSC – Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: www.microsemi.com ©2012 Microsemi Corporation Page 1 of 5 2N6317 and 2N6318 MECHANICAL and PACKAGING • • • • • CASE: Hermetic, TO-66 package. Nickel plate with nickel cap. TERMINALS: Solder dipped (Sn63/Pb37) over nickel plated alloy 52. RoHS compliant matte-tin plating is also available. MARKING: MSC, part number, date code, polarity symbol. WEIGHT: Approximately 5.7 grams. See Package Dimensions on last page. PART NOMENCLATURE 2N6317 (e3) JEDEC Type Number See Electrical Characteristics table SYMBOLS & DEFINITIONS Definition Symbol IB TC VCB VCC VEB RoHS Compliance e3 = RoHS compliant Blank = non-RoHS compliant Base current Case temperature Collector-base voltage Collector-supply voltage Emitter-base voltage T4-LDS-0283, Rev. 1 (121659) ©2012 Microsemi Corporation Page 2 of 5 2N6317 and 2N6318 ELECTRICAL CHARACTERISTICS @ 25 ºC unless otherwise stated Parameters / Test Conditions STATIC CHARACTERISTICS Collector Cutoff Current VCE = 60 VBE = 1.5 V, TC = 150 ºC VCE = 80 VBE = 1.5 V, TC = 150 ºC Collector Cutoff Current VCE = 60 VBE = 1.5 V VCE = 80 VBE = 1.5 V Emitter Cutoff Current VEB = 5 V (1) Collector-Emitter Open Base Sustain Voltage IB = 0, IC = 100 mA Collector Cutoff Current, Base Open IB = 0, VCE = 30 V IB = 0, VCE = 40 V (1) DC Forward Current Transfer Ratio IC = 7 A, VCE = 4 V IC = 2.5 A, VCE = 4 V IC = 0.5 A, VCE = 4 V (1) Collector-Emitter Saturation Voltage IC = 7.0 A, IB = 1.75 A IC = 4.0 A, IB = 0.4 A (1) Base-Emitter Saturation Voltage IC = 7.0 A, IB = 1.75 A Symbol Min. Max. Unit 2N6317 2N6318 ICEX 2.0 mA 2N6317 2N6318 ICEX 0.25 mA IEBO 1.0 mA 0.5 mA 2N6317 2N6318 2N6317 2N6318 VCEO(sus) 60 80 ICEO hFE 4 25 35 125 VCE(sat) 2.0 1.0 V VBE(sat) 2.5 V VBE 1.5 V Max. Unit 300 pF Max. Unit tr 0.7 µs ts 1.0 µs tf 0.8 µs (1) Base-Emitter Voltage IC = 2.5 A, VCE = 4.0 V NOTE: 1. Pulse Width < 300 µs; duty cycle < 2 %. DYNAMIC CHARACTERISTICS Parameters / Test Conditions Magnitude of Common Emitter Small-Signal Short-Circuit Forward Current Transfer Ratio VCE = 10 V, IC = 0.25 A, f = 1 MHz Common Base Output VCB = 10 V, IE = 0 A, f = 1 MHz Common Emitter Small-Signal Short-Circuit Forward Current Trans-Ratio VCE = 4 V, IC = 0.5 A, f = 1 kHz Symbol Min. |hfe| 4 Cob hfe 20 Symbol Min. SWITCHING CHARACTERISTICS Parameters / Test Conditions Rise time VCC = 30 V, IC = 25 A, IB1 = IB2 = 0.25 A (see figure 2) Storage time VCC = 30 V, IC = 25 A, IB1 = IB2 = 0.25 A (see figure 2) Fall time VCC = 30 V, IC = 25 A, IB1 = IB2 = 0.25 A (see figure 2) T4-LDS-0283, Rev. 1 (121659) ©2012 Microsemi Corporation Page 3 of 5 2N6317 and 2N6318 IC, COLLECTOR CURRENT (AMPS) GRAPHS VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 1 Safe Operating Area (TC = 25 ºC) Figure 2 Switching Times Test Circuit T4-LDS-0283, Rev. 1 (121659) ©2012 Microsemi Corporation Page 4 of 5 2N6317 and 2N6318 PACKAGE DIMENSIONS DIM A1 A2 B C D E F G H J K L M N T1 T2 Case T4-LDS-0283, Rev. 1 (121659) INCH MIN MAX .470 .500 .620 .050 .075 .050 .360 .028 .034 .145 radius .958 .962 .570 .590 .093 .107 .190 .210 .350 radius .142 .152 .250 .340 MILLIMETERS MIN MAX 11.94 12.70 15.75 1.27 1.91 1.27 9.14 0.71 0.86 3.68 radius 24.33 24.43 14.48 14.99 2.36 2.72 4.83 5.33 8.89 radius 3.61 3.86 6.35 8.64 Base Emitter Collector ©2012 Microsemi Corporation Page 5 of 5