93AA76/P

21130F.book Page 1 Wednesday, December 5, 2012 2:47 PM Not recommended for new designs – Please use 93AA76C or 93AA86C. 93AA76/86 8K/16K 1.8V Microwire Serial EEPROM Features: PDIP Package 1 2 3 4 8 VCC 7 6 5 PE ORG 93AA76/86 CS CLK DI DO 93AA76/86 • Single supply operation down to 1.8V • Low-power CMOS technology: - 1 mA active current typical - 5 A standby current (typical) at 3.0V • ORG pin selectable memory configuration: - 1024 x 8 or 512 x 16-bit organization (93AA76) - 2048 x 8 or 1024 x 16-bit organization (93AA86) • Self-timed erase and write cycles • Automatic ERAL before WRAL • Power on/off data protection circuitry • Industry standard 3-wire serial I/O • Device status signal during erase/write cycles • Sequential read function • 1,000,000 erase/write cycles ensured • Data retention > 200 years • 8-pin PDIP/SOIC package • Temperature ranges available: - Commercial (C): 0C to +70C Package Types 8 VSS SOIC Package CS CLK DI DO 1 2 3 4 7 6 5 VCC PE ORG VSS Block Diagram VCC VSS Description: The Microchip Technology Inc. 93AA76/86 are 8K and 16K low voltage serial Electrically Erasable PROMs. The device memory is configured as x8 or x16 bits depending on the ORG pin setup. Advanced CMOS technology makes these devices ideal for low power nonvolatile memory applications. These devices also have a Program Enable (PE) pin to allow the user to write-protect the entire contents of the memory array. The 93AA76/86 is available in standard 8-pin PDIP and 8-pin surface mount SOIC packages. Memory Array Address Decoder Address Counter Data Register Output Buffer DO DI PE CS CLK  1996-2012 Microchip Technology Inc. Mode Decode Logic Clock Generator DS21130F-page 1 21130F.book Page 2 Wednesday, December 5, 2012 2:47 PM 93AA76/86 1.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings(†) VCC .............................................................................................................................................................................7.0V All inputs and outputs w.r.t. VSS ........................................................................................................ -0.6V to Vcc + 1.0V Storage temperature ...............................................................................................................................-65°C to +150°C Ambient temperature with power applied ................................................................................................-40°C to +125°C Soldering temperature of leads (10 seconds) .......................................................................................................+300°C ESD protection on all pins ..........................................................................................................................................4 kV † NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. 1.1 AC Test Conditions AC Waveform: VLO = 2.0V VHI = Vcc - 0.2V (Note 1) VHI = 4.0V for (Note 2) Timing Measurement Reference Level: Input 0.5 VCC Output Note 1: 2: 0.5 VCC For VCC  4.0V For VCC  4.0V DS21130F-page 2  1996-2012 Microchip Technology Inc. 21130F.book Page 3 Wednesday, December 5, 2012 2:47 PM 93AA76/86 TABLE 1-1: DC CHARACTERISTICS DC CHARACTERISTICS Parameter Applicable over recommended operating ranges shown below unless otherwise noted: VCC = +1.8V to +6.0V Commercial (C): TA = 0°C to +70°C Symbol Min. Max. Units Conditions VCC  2.7V VIH1 2.0 VCC + 1 V VIH2 0.7 VCC VCC + 1 V VCC < 2.7V Low-level input voltage VIL1 -0.3 0.8 V VCC  2.7V VIL2 -0.3 0.2 VCC V VCC < 2.7V Low-level output voltage VOL1 — 0.4 V IOL = 2.1 mA; VCC = 4.5V VOL2 — 0.2 V IOL =100 A; VCC = VCC Min. High-level output voltage VOH1 2.4 — V IOH = -400 A; VCC = 4.5V VOH2 VCC-0.2 — V IOH = -100 A; VCC = VCC Min. Input leakage current ILI -10 10 A VIN = 0.1V to VCC Output leakage current ILO -10 10 A VOUT = 0.1V to VCC Pin capacitance (all inputs/outputs) CINT — 7 pF (Note 1) TA = +25°C, FCLK = 1 MHz Operating current ICC write — 3 mA VCC = 5.5V ICC read — 1 500 mA A FCLK = 3 MHz; VCC = 5.5V FCLK = 1 MHz; VCC = 3.0V ICCS — 100 30 A A CLK = CS = 0V; VCC = 5.5V CLK = CS = 0V; VCC = 3.0V DI = PE = VSS ORG = VSS or VCC High-level input voltage Standby current Note 1: This parameter is periodically sampled and not 100% tested.  1996-2012 Microchip Technology Inc. DS21130F-page 3 21130F.book Page 4 Wednesday, December 5, 2012 2:47 PM 93AA76/86 TABLE 1-2: AC CHARACTERISTICS AC CHARACTERISTICS Parameter Applicable over recommended operating ranges shown below unless otherwise noted: VCC = +1.8V to +6.0V Commercial (C): TA = 0°C to +70°C Symbol Min. Max. Units Clock frequency FCLK — 3 2 1 MHz MHz Mhz 4.5V VCC  6.0V 2.5V  VCC  4.5V 1.8V VCC  2.5V Clock high time TCKH 200 300 500 — ns ns ns 4.5V VCC  6.0V 2.5V VCC  4.5V 1.8V VCC  2.5V Clock low time TCKL 100 200 500 — ns ns ns 4.5V VCC  6.0V 2.5V VCC  4.5V 1.8V  VCC < 2.5V Chip select setup time TCSS 50 100 250 — ns ns ns 4.5V VCC  6.0V, Relative to CLK 2.5V VCC  4.5V, Relative to CLK 1.8V VCC  2.5V, Relative to CLK Chip select hold time TCSH 0 — ns 1.8V VCC  6.0V Chip select low time TCSL 250 — ns 1.8V VCC  6.0V, Relative to CLK Data input setup time TDIS 50 100 250 — ns ns ns 4.5V VCC  6.0V, Relative to CLK 2.5V VCC