93C76B-I/P

93AA76A/B/C, 93LC76A/B/C, 93C76A/B/C 8K Microwire Compatible Serial EEPROM Device Selection Table Part Number VCC Range ORG Pin PE Pin Word Size Temp Ranges Packages 93AA76A 1.8-5.5 No No 8-bit I P, SN, ST, MS, OT 93AA76B 1.8-5-5 No No 16-bit I P, SN, ST, MS, OT 93LC76A 2.5-5.5 No No 8-bit I, E P, SN, ST, MS, OT 93LC76B 2.5-5.5 No No 16-bit I, E P, SN, ST, MS, OT 93C76A 4.5-5.5 No No 8-bit I, E P, SN, ST, MS, OT 93C76B 4.5-5.5 No No 16-bit I, E P, SN, ST, MS, OT 93AA76C 1.8-5.5 Yes Yes 8- or 16-bit I P, SN, ST, MS, MC, MN 93LC76C 2.5-5.5 Yes Yes 8- or 16-bit I, E P, SN, ST, MS, MC, MN 93C76C 4.5-5.5 Yes Yes 8- or 16-bit I, E P, SN, ST, MS, MC, MN Features: Description: • • • • • The Microchip Technology Inc. 93XX76A/B/C devices are 8Kbit, low-voltage, serial Electrically Erasable PROMs (EEPROM). Word-selectable devices such as the 93XX76C are dependent upon external logic levels driving the ORG pin to set word size. The 93XX76A devices provide dedicated 8-bit memory organization, while the 93XX76B devices provide dedicated 16-bit memory organization. A Program Enable (PE) pin allows the user to write-protect the entire memory array. Advanced CMOS technology makes these devices ideal for low-power, nonvolatile memory applications. The 93XX Series is available in standard packages including 8-lead PDIP and SOIC, and advanced packaging including 8-lead MSOP, 6-lead SOT-23, 8-lead 2x3 DFN/ TDFN and 8-lead TSSOP. All packages are Pb-free (Matte Tin) finish. • • • • • • • • • • Low-Power CMOS Technology ORG Pin to Select Word Size for ‘76C’ Version 1024 x 8-bit Organization ‘A’ Devices (no ORG) 512 x 16-bit Organization ‘B’ Devices (no ORG) Program Enable Pin to Write-Protect the Entire Array (‘76C’ version only) Self-Timed Erase/Write Cycles (including Auto-Erase) Automatic ERAL Before WRAL Power-On/Off Data Protection Circuitry Industry Standard 3-Wire Serial I/O Device Status Signal (Ready/Busy) Sequential Read Function 1,000,000 Erase/Write Cycles Data Retention > 200 Years Pb-free and RoHS Compliant Temperature Ranges Supported: - Industrial (I) Package Types (not to scale) -40°C to +85°C - Automotive (E) -40°C to +125°C Pin Function Table Name Function CS Chip Select CLK Serial Data Clock DI Serial Data Input DO Serial Data Output VSS Ground PE Program Enable – 93XX76C only ORG Memory Configuration – 93XX76C only VCC Power Supply  2003-2012 Microchip Technology Inc. SOT-23 (OT) PDIP/SOIC (P, SN) CS CLK DI DO 1 2 3 4 8 7 6 5 VCC PE(1) ORG(1) VSS 1 2 3 4 8 7 6 5 1 6 2 5 VCC CS DI 3 4 CLK DFN/TDFN (MC, MN) TSSOP/MSOP (ST, MS) CS CLK DI DO DO VSS VCC PE(1) ORG(1) VSS CS 1 CLK 2 DI 3 DO 4 8 7 6 5 VCC PE ORG VSS Note 1: 93XX76C only. DS21796M-page 1 93AA76A/B/C, 93LC76A/B/C, 93C76A/B/C 1.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings (†) VCC .............................................................................................................................................................................7.0V All inputs and outputs w.r.t. VSS ......................................................................................................... -0.6V to VCC +1.0V Storage temperature ...............................................................................................................................-65°C to +150°C Ambient temperature with power applied ................................................................................................-40°C to +125°C ESD protection on all pins  4 kV † NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. TABLE 1-1: DC CHARACTERISTICS All parameters apply over the specified ranges unless otherwise noted. Param. Symbol No. Parameter Industrial (I): TA = -40°C to +85°C, VCC = +1.8V to 5.5V Automotive (E): TA = -40°C to +125°C, VCC = +2.5V to 5.5V Min Typ Max Units Conditions D1 VIH1 VIH2 High-level input voltage 2.0 0.7 VCC — — VCC +1 VCC +1 V V VCC 2.7V VCC < 2.7V D2 VIL1 VIL2 Low-level input voltage -0.3 -0.3 — — 0.8 0.2 VCC V V VCC 2.7V VCC < 2.7V D3 VOL1 VOL2 Low-level output voltage — — — — 0.4 0.2 V V IOL = 2.1 mA, VCC = 4.5V IOL = 100 A, VCC = 2.5V D4 VOH1 VOH2 High-level output voltage 2.4 VCC - 0.2 — — — — V V IOH = -400 A, VCC = 4.5V IOH = -100 A, VCC = 2.5V D5 ILI Input leakage current — — ±1 A VIN = VSS or VCC D6 ILO Output leakage current — — ±1 A VOUT = VSS or VCC D7 CIN, COUT Pin capacitance (all inputs/ outputs) — — 7 pF VIN/VOUT = 0V (Note 1) TA = 25°C, FCLK = 1 MHz D8 ICC write Write current — — — 500 3 — mA A FCLK = 3 MHz, VCC = 5.5V FCLK = 2 MHz, VCC = 2.5V D9 ICC read Read current — — — — — 100 1 500 — mA A A FCLK = 3 MHz, VCC = 5.5V FCLK = 2 MHz, VCC = 3.0V FCLK = 2 MHz, VCC = 2.5V D10 ICCS Standby current — — — — 1 5 A A I – Temp E – Temp CLK = CS = 0V ORG = DI = PE = VSS or VCC (Note 2) (Note 3) D11 VPOR VCC voltage detect — — 1.5 3.8 — — V V Note 1: 2: 3: (Note 1) 93AA76A/B/C, 93LC76A/B/C 93C76A/B/C This parameter is periodically sampled and not 100% tested. ORG and PE pins not available on ‘A’ or ‘B’ versions. Ready/Busy status must be cleared from DO; see Section 3.4 “Data Out (DO)”. DS21796M-page 2  2003-2012 Microchip Technology Inc. 93AA76A/B/C, 93LC76A/B/C, 93C76A/B/C TABLE 1-2: AC CHARACTERISTICS All parameters apply over the specified ranges unless otherwise noted. Param. Symbol No. Parameter Industrial (I): TA = -40°C to +85°C, VCC = +1.8V to 5.5V Automotive (E): TA = -40°C to +125°C, VCC = +2.5V to 5.5V Min Max Units Conditions A1 FCLK Clock frequency — 3 2 1 MHz MHz MHz 4.5V VCC < 5.5V 2.5V VCC < 4.5V 1.8V VCC < 2.5V A2 TCKH Clock high time 200 250 450 — ns ns ns 4.5V VCC < 5.5V 2.5V VCC < 4.5V 1.8V VCC < 2.5V A3 TCKL Clock low time 100 200 450 — ns ns ns 4.5V VCC < 5.5V 2.5V VCC < 4.5V 1.8V VCC < 2.5V A4 TCSS Chip Select setup time 50 100 250 — ns ns ns 4.5V VCC < 5.5V 2.5V VCC < 4.5V 1.8V VCC < 2.5V A5 TCSH Chip Select hold time 0 — ns 1.8V VCC < 5.5V A6 TCSL Chip Select low time 250 — ns 1.8V VCC < 5.5V A7 TDIS Data input setup time 50 100 250 — ns ns ns 4.5V VCC < 5.5V 2.5V VCC < 4.5V 1.8V VCC < 2.5V A8 TDIH Data input hold time 50 100 250 — ns ns ns 4.5V VCC < 5.5V 2.5V VCC < 4.5V 1.8V VCC < 2.5V A9 TPD Data output delay time — 100 250 400 ns ns ns 4.5V VCC < 5.5V, CL = 100 pF 2.5V VCC < 4.5V, CL = 100 pF 1.8V VCC < 2.5V, CL = 100 pF A10 TCZ Data output disable time — 100 200 ns ns 4.5V VCC < 5.5V, (Note 1) 1.8V VCC < 4.5V, (Note 1) A11 TSV Status valid time — 200 300 500 ns ns ns 4.5V VCC < 5.5V, CL = 100 pF 2.5V VCC < 4.5V, CL = 100 pF 1.8V VCC < 2.5V, CL = 100 pF A12 TWC Program cycle time — 5 ms Erase/Write mode (AA and LC versions) A13 TWC — 2 ms Erase/Write mode (93C versions) A14 TEC — 6 ms ERAL mode, 4.5V VCC 5.5V A15 TWL — 15 ms WRAL mode, 4.5V VCC 5.5V A16 — 1M — Note 1: 2: Endurance cycles 25°C, VCC = 5.0V, (Note 2) This parameter is periodically sampled and not 100% tested. This application is not tested but ensured by characterization. For endurance estimates in a specific application, please consult the Total Endurance™ Model, which may be obtained from Microchip’s web site at www.microchip.com.  2003-2012 Microchip Technology Inc. DS21796M-page 3 93AA76A/B/C, 93LC76A/B/C, 93C76A/B/C FIGURE 1-1: CS SYNCHRONOUS DATA TIMING VIH TCSS VIL TCKH TCKL TCSH VIH CLK VIL TDIS TDIH VIH DI VIL DO (Read) DO (Program) Note: TCZ TPD TPD VOH VOL TCZ TSV VOH Status Valid VOL TSV is relative to CS. TABLE 1-3: INSTRUCTION SET FOR X16 ORGANIZATION (93XX76B OR 93XX76C WITH ORG = 1) Instruction SB Opcode Address READ 1 10 X EWEN 1 00 1 A8 A7 A6 A5 A4 A3 A2 A1 A0 1 x x x x x x x x A8 A7 A6 A5 A4 A3 A2 A1 A0 Data In Data Out Req. CLK Cycles — D15-D0 29 — High-Z 13 — (RDY/BSY) 13 — (RDY/BSY) 13 D15-D0 (RDY/BSY) 29 ERASE 1 11 X ERAL 1 00 1 WRITE 1 01 X WRAL 1 00 0 1 x x x x x x x x D15-D0 (RDY/BSY) 29 EWDS 1 00 0 0 x x x x x x x x — High-Z 13 0 X X X X X X X X A8 A7 A6 A5 A4 A3 A2 A1 A0 TABLE 1-4: INSTRUCTION SET FOR X8 ORGANIZATION (93XX76A OR 93XX76C WITH ORG = 0) Instruction SB Opcode READ 1 10 X EWEN 1 00 1 ERASE 1 11 X ERAL 1 00 1 WRITE 1 01 X WRAL 1 00 0 1 x x x x x x x x EWDS 1 00 0 0 x x x x x x x x DS21796M-page 4 Data In Data Out Req. CLK Cycles — D7-D0 22 — High-Z 14 — (RDY/BSY) 14 — (RDY/BSY) 14 D7-D0 (RDY/BSY) 22 x D7-D0 (RDY/BSY) 22 x — High-Z 14 Address A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 1 x x x x x x x x x A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 0 x x x x x x x x x A9 A8 A7 A6 A5 A4 A3 A2 A1 A0  2003-2012 Microchip Technology Inc. 93AA76A/B/C, 93LC76A/B/C, 93C76A/B/C 2.0 FUNCTIONAL DESCRIPTION When the ORG pin (93XX76C) is connected to VCC, the (x16) organization is selected. When it is connected to ground, the (x8) organization is selected. Instructions, addresses and write data are clocked into the DI pin on the rising edge of the clock (CLK). The DO pin is normally held in a High-Z state except when reading data from the device, or when checking the Ready/ Busy status during a programming operation. The Ready/Busy status can be verified during an Erase/ Write operation by polling the DO pin; DO low indicates that programming is still in progress, while DO high indicates the device is ready. DO will enter the High-Z state on the falling edge of CS. 2.1 Start Condition The Start bit is detected by the device if CS and DI are both high with respect to the positive edge of CLK for the first time. Before a Start condition is detected, CS, CLK and DI may change in any combination (except to that of a Start condition), without resulting in any device operation (Read, Write, Erase, EWEN, EWDS, ERAL or WRAL). As soon as CS is high, the device is no longer in Standby mode. 2.3 All modes of operation are inhibited when VCC is below a typical voltage of 1.5V for ‘93AA’ and ‘93LC’ devices or 3.8V for ‘93C’ devices. The EWEN and EWDS commands give additional protection against accidentally programming during normal operation. Note: 2.2 Note: It is possible to connect the Data In and Data Out pins together. However, with this configuration it is possible for a “bus conflict” to occur during the “dummy zero” that precedes the read operation if A0 is a logic highlevel. Under such a condition the voltage level seen at Data Out is undefined and will depend upon the relative impedances of Data Out and the signal source driving A0. The higher the current sourcing capability of the driver, the higher the voltage at the Data Out pin. In order to limit this current, a resistor should be connected between DI and DO.  2003-2012 Microchip Technology Inc. To prevent accidental writes to the array in the 93XX76C devices, set the PE pin to a logic low. Block Diagram VCC VSS Memory Array Address Decoder Address Counter When preparing to transmit an instruction, either the CLK or DI signal levels must be at a logic low as CS is toggled active high. Data In/Data Out (DI/DO) For added protection, an EWDS command should be performed after every write operation and an external 10 k pulldown protection resistor should be added to the CS pin. After power-up the device is automatically in the EWDS mode. Therefore, an EWEN instruction must be performed before the initial ERASE or WRITE instruction can be executed. An instruction following a Start condition will only be executed if the required opcode, address and data bits for any particular instruction are clocked in. Note: Data Protection Data Register Output Buffer DO DI ORG* CS Mode Decode Logic PE* CLK Clock Register *ORG and PE inputs are not available on A/B devices. DS21796M-page 5 93AA76A/B/C, 93LC76A/B/C, 93C76A/B/C 2.4 Erase The DO pin indicates the Ready/Busy status of the device if CS is brought high after a minimum of 250 ns low (TCSL). DO at logical ‘0’ indicates that programming is still in progress. DO at logical ‘1’ indicates that the register at the specified address has been erased and the device is ready for another instruction. The ERASE instruction forces all data bits of the specified address to the logical ‘1’ state. The rising edge of CLK before the last address bit initiates the write cycle. Note: FIGURE 2-1: After the Erase cycle is complete, issuing a Start bit and then taking CS low will clear the Ready/Busy status from DO. ERASE TIMING TCSL CS Check Status CLK 1 DI 1 1 AN AN-1 AN-2 ••• A0 TCZ TSV DO High-Z Busy Ready High-Z TWC 2.5 Erase All (ERAL) The DO pin indicates the Ready/Busy status of the device, if CS is brought high after a minimum of 250 ns low (TCSL). The Erase All (ERAL) instruction will erase the entire memory array to the logical ‘1’ state. The ERAL cycle is identical to the erase cycle, except for the different opcode. The ERAL cycle is completely self-timed. The rising edge of CLK before the last data bit initiates the write cycle. Clocking of the CLK pin is not necessary after the device has entered the ERAL cycle. FIGURE 2-2: Note: After the ERAL command is complete, issuing a Start bit and then taking CS low will clear the Ready/Busy status from DO. VCC must be 4.5V for proper operation of ERAL. ERAL TIMING TCSL CS Check Status CLK DI 1 0 0 1 0 x ••• x TCZ TSV DO High-Z Busy Ready High-Z TEC DS21796M-page 6  2003-2012 Microchip Technology Inc. 93AA76A/B/C, 93LC76A/B/C, 93C76A/B/C 2.6 Erase/Write Disable and Enable (EWDS/EWEN) Once the EWEN instruction is executed, programming remains enabled until an EWDS instruction is executed or VCC is removed from the device. The 93XX76A/B/C powers up in the Erase/Write Disable (EWDS) state. All programming modes must be preceded by an Erase/Write Enable (EWEN) instruction. FIGURE 2-3: To protect against accidental data disturbance, the EWDS instruction can be used to disable all erase/write functions and should follow all programming operations. Execution of a READ instruction is independent of both the EWEN and EWDS instructions. EWDS TIMING TCSL CS CLK 1 DI FIGURE 2-4: 0 0 0 0 ••• x x EWEN TIMING TCSL CS CLK 1 DI 2.7 0 0 1 1 ••• x Read The output data bits will toggle on the rising edge of the CLK and are stable after the specified time delay (TPD). Sequential read is possible when CS is held high. The memory data will automatically cycle to the next register and output sequentially. The READ instruction outputs the serial data of the addressed memory location on the DO pin. A dummy zero bit precedes the 8-bit (If ORG pin is low or A-version devices) or 16-bit (If ORG pin is high or B-version devices) output string. FIGURE 2-5: x READ TIMING CS CLK DI DO 1 1 0 High-Z  2003-2012 Microchip Technology Inc. AN ••• A0 0 Dx ••• D0 Dx ••• D0 Dx ••• D0 DS21796M-page 7 93AA76A/B/C, 93LC76A/B/C, 93C76A/B/C 2.8 Write The DO pin indicates the Ready/Busy status of the device, if CS is brought high after a minimum of 250 ns low (TCSL). DO at logical ‘0’ indicates that programming is still in progress. DO at logical ‘1’ indicates that the register at the specified address has been written with the data specified and the device is ready for another instruction. The WRITE instruction is followed by 8 bits (if ORG is low or A-version devices) or 16 bits (if ORG pin is high or B-version devices) of data which are written into the specified address. The self-timed auto-erase and programming cycle is initiated by the rising edge of CLK on the last data bit. FIGURE 2-6: Note: The write sequence requires a logic high signal on the PE pin prior to the rising edge of the last data bit. Note: After the Write cycle is complete, issuing a Start bit and then taking CS low will clear the Ready/Busy status from DO. WRITE TIMING TCSL CS CLK DI 1 0 1 AN ••• A0 Dx ••• D0 TSV DO High-Z Busy TCZ Ready High-Z TWC DS21796M-page 8  2003-2012 Microchip Technology Inc. 93AA76A/B/C, 93LC76A/B/C, 93C76A/B/C 2.9 Write All (WRAL) The DO pin indicates the Ready/Busy status of the device if CS is brought high after a minimum of 250 ns low (TCSL). The Write All (WRAL) instruction will write the entire memory array with the data specified in the command. The self-timed auto-erase and programming cycle is initiated by the rising edge of CLK on the last data bit. Clocking of the CLK pin is not necessary after the device has entered the WRAL cycle. The WRAL command includes an automatic ERAL cycle for the device, so the WRAL instruction does not require an ERAL instruction. However, the chip must be in the EWEN status. Note: The write sequence requires a logic high signal on the PE pin prior to the rising edge of the last data bit. Note: After the Write All cycle is complete, issuing a Start bit and then taking CS low will clear the Ready/Busy status from DO. VCC must be 4.5V for proper operation of WRAL. FIGURE 2-7: WRAL TIMING TCSL CS CLK DI 1 0 0 0 1 x ••• x Dx ••• D0 TSV DO High-Z Busy TCZ Ready HIGH-Z TWL  2003-2012 Microchip Technology Inc. DS21796M-page 9 93AA76A/B/C, 93LC76A/B/C, 93C76A/B/C 3.0 PIN DESCRIPTIONS TABLE 3-1: PIN DESCRIPTIONS PDIP SOIC TSSOP MSOP DFN(1) TDFN(1) SOT-23 CS 1 1 1 1 1 1 5 Chip Select CLK 2 2 2 2 2 2 4 Serial Clock Name Function DI 3 3 3 3 3 3 3 Data In DO 4 4 4 4 4 4 1 Data Out VSS 5 5 5 5 5 5 2 Ground ORG 6 6 6 6 6 6 — Organization/93XX76C only PE 7 7 7 7 7 7 — Program Enable/ 93XX76C only 8 8 8 8 8 8 6 Power Supply VCC Note 1: 3.1 The exposed pad on the DFN/TDFN package may be connected to VSS or left floating. Chip Select (CS) A high level selects the device; a low level deselects the device and forces it into Standby mode. However, a programming cycle that is already in progress will be completed, regardless of the Chip Select (CS) input signal. If CS is brought low during a program cycle, the device will go into Standby mode as soon as the programming cycle is completed. CS must be low for 250 ns minimum (TCSL) between consecutive instructions. If CS is low, the internal control logic is held in a Reset status. 3.2 Serial Clock (CLK) The Serial Clock is used to synchronize the communication between a master device and the 93XX series device. Opcodes, address and data bits are clocked in on the positive edge of CLK. Data bits are also clocked out on the positive edge of CLK. CLK can be stopped anywhere in the transmission sequence (at high or low-level) and can be continued anytime with respect to Clock High Time (TCKH) and Clock Low Time (TCKL). This gives the controlling master freedom in preparing opcode, address and data. CLK is a “don’t care” if CS is low (device deselected). If CS is high, but the Start condition has not been detected (DI = 0), any number of clock cycles can be received by the device without changing its status (i.e., waiting for a Start condition). CLK cycles are not required during the self-timed write (i.e., auto erase/write) cycle. After detection of a Start condition the specified number of clock cycles (respectively, low-to-high transitions of CLK) must be provided. These clock cycles are required to clock in all required opcode, address and DS21796M-page 10 data bits before an instruction is executed. CLK and DI then become “don’t care” inputs waiting for a new Start condition to be detected. 3.3 Data In (DI) Data In (DI) is used to clock in a Start bit, opcode, address and data synchronously with the CLK input. 3.4 Data Out (DO) Data Out (DO) is used in the Read mode to output data synchronously with the CLK input (TPD after the positive edge of CLK). This pin also provides Ready/Busy status information during erase and write cycles. Ready/Busy status information is available on the DO pin if CS is brought high after being low for minimum Chip Select Low Time (TCSL) and an erase or write operation has been initiated. The Status signal is not available on DO, if CS is held low during the entire erase or write cycle. In this case, DO is in the High-Z mode. If status is checked after the erase/write cycle, the data line will be high to indicate the device is ready. Note: 3.5 After a programming cycle is complete, issuing a Start bit and then taking CS low will clear the Ready/Busy status from DO. Organization (ORG) When the ORG pin is connected to VCC or logic high, the (x16) memory organization is selected. When the ORG pin is tied to VSS or logic low, the (x8) memory organization is selected. For proper operation, ORG must be tied to a valid logic level. 93XX76A devices are always (x8) organization and 93XX76B devices are always (x16) organization.  2003-2012 Microchip Technology Inc. 93AA76A/B/C, 93LC76A/B/C, 93C76A/B/C 3.6 Program Enable (PE) This pin allows the user to enable or disable the ability to write data to the memory array. If the PE pin is tied to VCC, the device can be programmed. If the PE pin is tied to VSS, programming will be inhibited. This pin cannot be floated – it must be tied to VCC or VSS. PE is not available on 93XX76A or 93XX76B. On those devices, programming is always enabled.  2003-2012 Microchip Technology Inc. DS21796M-page 11 93AA76A/B/C, 93LC76A/B/C, 93C76A/B/C 4.0 PACKAGING INFORMATION 4.1 Package Marking Information 8-Lead MSOP (150 mil) XXXXXXT YWWNNN 6-Lead SOT-23 XXNN Example: 3L76CI 5281L7 Example: 4EL7 8-Lead PDIP Example: XXXXXXXX T/XXXNNN YYWW 93LC76C I/P e3 1L7 0528 8-Lead SOIC Example: XXXXXXXT XXXXYYWW NNN 8-Lead TSSOP XXXX TYWW NNN 8-Lead 2x3 DFN XXX YWW NN 8-Lead 2x3 TDFN XXX YWW NN DS21796M-page 12 93LC76CI SN e3 0528 1L7 Example: L76C I528 1L7 Example: 3B4 528 L7 Example: EB4 528 L7  2003-2012 Microchip Technology Inc. 93AA76A/B/C, 93LC76A/B/C, 93C76A/B/C 1st Line Marking Codes Part Number SOT-23 TSSOP 93AA76A DFN TDFN MSOP A76A I Temp. E Temp. I Temp. E Temp. I Temp. E Temp. 3A76AT 4BNN — — — — — 93AA76B A76B 3A76BT 4LNN — — — — — 93AA76C A76C 3A76CT — — 3B1 — EB1 — 93LC76A L76A 3L76AT 4ENN 4FNN — — — — 93LC76B L76B 3L76BT 4PNN 4RNN — — — — 93LC76C L76C 3L76CT — — 3B4 3B5 EB4 EB5 93C76A C76A 3C76AT 4HNN 4JNN — — — — 93C76B C76B 3C76BT 4TNN 4UNN — — — — 93C76C C76C 3C76CT — — 3B7 3B8 EB7 EB8 Note: T = Temperature grade (I, E) NN = Alphanumeric traceability code Legend: XX...X T Y YY WW NNN e3 Part number or part number code Temperature (I, E) Year code (last digit of calendar year) Year code (last 2 digits of calendar year) Week code (week of January 1 is week ‘01’) Alphanumeric traceability code (2 characters for small packages) Pb-free JEDEC designator for Matte Tin (Sn) Note: For very small packages with no room for the Pb-free JEDEC designator e3 , the marking will only appear on the outer carton or reel label. Note: In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for customer-specific information.  2003-2012 Microchip Technology Inc. DS21796M-page 13 93AA76A/B/C, 93LC76A/B/C, 93C76A/B/C NOTES: DS21796M-page 14  2003-2012 Microchip Technology Inc. 93AA76A/B/C, 93LC76A/B/C, 93C76A/B/C Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging  2003-2012 Microchip Technology Inc. DS21796M-page 15 93AA76A/B/C, 93LC76A/B/C, 93C76A/B/C Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging DS21796M-page 16  2003-2012 Microchip Technology Inc. 93AA76A/B/C, 93LC76A/B/C, 93C76A/B/C        . # #$ #/! - 0  # 1/%#  #!# ##+22---  2/ b 4 N E E1 PIN 1 ID BY LASER MARK 1 2 3 e e1 D A A2 c φ L A1 L1 3#   4# 5$8  %1 44" " 5 5 56 7 9 1#  ()* 6$# !4!1#  )* 6, :#   ;  !!1/ /