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APT2X61D20J

APT2X61D20J

  • 厂商:

    ACTEL(微芯科技)

  • 封装:

    SOT-227

  • 描述:

    DIODE MODULE 200V 60A ISOTOP

  • 数据手册
  • 价格&库存
APT2X61D20J 数据手册
2 1 3 4 2 1 Anti-Parallel APT2X60D20J 3 4 2 1 3 4 Parallel APT2X61D20J 7 22 TO S "UL Recognized" ISOTOP ® ® APT2X61D20J APT2X60D20J 200V 200V 60A 60A DUAL DIE ISOTOP® PACKAGE ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode • Ultrafast Recovery Times • Low Losses • Soft Recovery Characteristics • Low Noise Switching • Popular SOT-227 Package • Cooler Operation • Low Forward Voltage • Higher Reliability Systems • High Blocking Voltage • Increased System Power • • • • • -Switchmode Power Supply -Inverters Free Wheeling Diode -Motor Controllers -Converters Snubber Diode Uninterruptible Power Supply (UPS) Induction Heating High Speed Rectifiers • Low Leakage Current MAXIMUM RATINGS Symbol VR All Ratings: TC = 25°C unless otherwise specified. Characteristic / Test Conditions Maximum Peak Repetitive Reverse Voltage VRWM Maximum Working Peak Reverse Voltage IF(AV) Maximum Average Forward Current (TC = 122°C, Duty Cycle = 0.5) IFSM TJ,TSTG TL APT2X61_60D20J UNIT 200 Volts Maximum D.C. Reverse Voltage VRRM IF(RMS) Density 60 RMS Forward Current (Square wave, 50% duty) 107 Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms) 600 Amps -55 to 175 Operating and StorageTemperature Range Lead Temperature for 10 Sec. °C 300 STATIC ELECTRICAL CHARACTERISTICS Forward Voltage IRM Maximum Reverse Leakage Current CT Junction Capacitance, VR = 200V MIN TYP MAX IF = 60A 1.1 1.3 IF = 120A 1.4 IF = 60A, TJ = 125°C 0.9 Volts VR = VR Rated 250 VR = VR Rated, TJ = 125°C 500 APT Website - http://www.advancedpower.com 210 UNIT µA 2-2005 VF Characteristic / Test Conditions pF 053-2003 Rev D Symbol DYNAMIC CHARACTERISTICS Symbol APT2X61_60D20J Characteristic Test Conditions trr Reverse Recovery Time trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM - 30 - 31 - 60 - 3 - 60 ns - 250 nC - 7 - 40 ns - 540 nC - 24 Amps MIN TYP IF = 60A, diF/dt = -200A/µs VR = 133V, TC = 25°C Maximum Reverse Recovery Current Reverse Recovery Time Qrr Reverse Recovery Charge IF = 60A, diF/dt = -200A/µs VR = 133V, TC = 125°C Maximum Reverse Recovery Current trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM TYP IF = 1A, diF/dt = -100A/µs, VR = 30V, TJ = 25°C trr IRRM MIN IF = 60A, diF/dt = -1000A/µs VR = 133V, TC = 125°C Maximum Reverse Recovery Current MAX UNIT ns nC - - Amps Amps THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MAX RθJC Junction-to-Case Thermal Resistance .60 RθJA Junction-to-Ambient Thermal Resistance 20 WT Torque Package Weight oz 29.2 g 10 lb•in 1.1 N•m APT Reserves the right to change, without notice, the specifications and information contained herein. 0.9 0.50 0.7 0.5 0.30 0.3 0.20 0.10 0 Note: PDM Z JC, THERMAL IMPEDANCE (°C/W) θ 0.70 0.40 10-5 t Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC SINGLE PULSE 10-4 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION RC MODEL 2-2005 Junction temp (°C) 053-2003 Rev D t1 t2 0.1 0.05 Power (watts) 0.159 °C/W 0.00560 J/°C 0.255 °C/W 0.0849 J/°C 0.186 °C/W 0.489 J/°C Case temperature (°C) FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL °C/W 1.03 Maximum Mounting Torque 0.60 UNIT TYPICAL PERFORMANCE CURVES 200 160 140 120 100 TJ = 125°C 80 TJ = 25°C 60 TJ = 150°C 40 TJ = -55°C 20 0 0 0.5 1 1.5 2 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 2. Forward Current vs. Forward Voltage 120A R 500 400 60A 300 30A 200 100 0 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/µs) Figure 4. Reverse Recovery Charge vs. Current Rate of Change 60A 40 20 T = 125°C J V = 133V 20 60A 15 10 30A 5 Duty cycle = 0.5 T = 175°C J 100 trr 80 trr 0.8 120A R 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/µs) Figure 5. Reverse Recovery Current vs. Current Rate of Change Qrr 1.0 30A 0 IF(AV) (A) Kf, DYNAMIC PARAMETERS (Normalized to 1000A/µs) 60 120 1.2 120A 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE(A/µs) Figure 3. Reverse Recovery Time vs. Current Rate of Change 1.4 IRRM 0.6 60 40 0.4 Qrr 0.2 0.0 R 25 T = 125°C J V = 133V APT2X61_60D20J T = 125°C J V = 133V 0 IRRM, REVERSE RECOVERY CURRENT (A) Qrr, REVERSE RECOVERY CHARGE (nC) 600 trr, REVERSE RECOVERY TIME (ns) IF, FORWARD CURRENT (A) 180 80 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 6. Dynamic Parameters vs. Junction Temperature 20 0 25 50 75 100 125 150 175 Case Temperature (°C) Figure 7. Maximum Average Forward Current vs. CaseTemperature 1200 1000 800 2-2005 600 400 200 0 1 10 100 200 VR, REVERSE VOLTAGE (V) Figure 8. Junction Capacitance vs. Reverse Voltage 053-2003 Rev D CJ, JUNCTION CAPACITANCE (pF) 1400 APT2X61_60D20J Vr diF /dt Adjust +18V APT20M36BLL 0V D.U.T. 30µH trr/Qrr Waveform PEARSON 2878 CURRENT TRANSFORMER Figure 9. Diode Test Circuit 1 IF - Forward Conduction Current 2 diF /dt - Rate of Diode Current Change Through Zero Crossing. 3 IRRM - Maximum Reverse Recovery Current. 4 trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. 5 1 4 Zero 5 3 0.25 IRRM 2 Qrr - Area Under the Curve Defined by IRRM and trr. Figure 10, Diode Reverse Recovery Waveform and Definitions SOT-227 (ISOTOP®) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) r = 4.0 (.157) (2 places) 8.9 (.350) 9.6 (.378) Hex Nut M4 H100 (4 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 4.0 (.157) 4.2 (.165) (2 places) 053-2003 Rev D 2-2005 3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 1.95 (.077) 2.14 (.084) Anti-parallel Anode 2 APT2X60D20J Parallel APT2X61D20J Cathode 1 Cathode 1 Anode 1 Anode 1 Anode 2 38.0 (1.496) 38.2 (1.504) Dimensions in Millimeters and (Inches) Cathode 2 Cathode 2 ISOTOP® is a Registered Trademark of SGS Thomson. APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved. Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Microsemi: APT2X61D20J
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