APT5018BFLLG

APT5018BFLL APT5018SFLL 500V 27A 0.180Ω R POWER MOS 7 FREDFET BLL D3PAK ® Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg VDSS ID SLL • Increased Power Dissipation • Easier To Drive • TO-247 or Surface Mount D3PAK Package • FAST RECOVERY BODY DIODE MAXIMUM RATINGS Symbol TO-247 D G S All Ratings: TC = 25°C unless otherwise specified. Parameter Drain-Source Voltage APT5018 UNIT 500 Volts 27 Continuous Drain Current @ TC = 25°C 1 Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous ±30 Gate-Source Voltage Transient ±40 Total Power Dissipation @ TC = 25°C 300 Watts Linear Derating Factor 2.4 W/°C VGSM PD TJ,TSTG 108 -55 to 150 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current 1 27 1 Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy °C 300 (Repetitive and Non-Repetitive) EAR Volts Amps 30 4 mJ 1210 STATIC ELECTRICAL CHARACTERISTICS ID(on) RDS(on) IDSS IGSS VGS(th) MIN Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 500 Volts 27 Amps On State Drain Current 2 (VDS > I D(on) x R DS(on) Max, VGS = 10V) Drain-Source On-State Resistance 2 (VGS = 10V, 13.5A) TYP MAX 0.180 UNIT Ohms Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V) 250 Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125°C) 1000 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) ±100 nA 5 Volts Gate Threshold Voltage (VDS = VGS, ID = 1mA) 3 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com Downloaded from Elcodis.com electronic components distributor µA 3-2003 BVDSS Characteristic / Test Conditions 050-7027 Rev C Symbol APT5018BFLL-SFLL DYNAMIC CHARACTERISTICS Symbol Ciss Coss Crss Characteristic Test Conditions Input Capacitance VGS = 0V Output Capacitance VDS = 25V Total Gate Charge Qgs Gate-Source Charge 3 Gate-Drain ("Miller ") Charge Turn-on Delay Time ID = 27A @ 25°C RESISTIVE SWITCHING VGS = 15V Rise Time td(off) VDD = 250V Turn-off Delay Time tf ID = 27A @ 25°C Fall Time Turn-on Switching Energy Eoff Turn-off Switching Energy 6 INDUCTIVE SWITCHING @ 25°C Eon Turn-on Switching Energy Eoff Turn-off Switching Energy ns 216 VDD = 333V, VGS = 15V 134 ID = 27A, RG = 5Ω 6 nC 2 RG = 0.6Ω Eon UNIT pF 38 58 15 31 9 4 18 VDD = 250V td(on) MAX 2596 546 VGS = 10V Qgd tr TYP f = 1 MHz Reverse Transfer Capacitance Qg MIN INDUCTIVE SWITCHING @ 125°C µJ 337 VDD = 333V VGS = 15V 162 ID = 27A, RG = 5Ω SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Characteristic / Test Conditions Symbol MIN TYP MAX UNIT IS Continuous Source Current (Body Diode) ISM Pulsed Source Current 1 (Body Diode) 108 VSD Diode Forward Voltage 2 (VGS = 0V, IS = -ID 27A) 1.3 Volts 15 V/ns dv/ dt Peak Diode Recovery dv/ dt 27 5 Reverse Recovery Time (IS = -ID 27A, di/dt = 100A/µs) Tj = 25°C 250 Tj = 125°C 450 Q rr Reverse Recovery Charge (IS = -ID 27A, di/dt = 100A/µs) Tj = 25°C 1.76 Tj = 125°C 4.23 IRRM Peak Recovery Current (IS = -ID 27A, di/dt = 100A/µs) Tj = 25°C 12 Tj = 125°C 17 t rr Amps ns µC Amps THERMAL CHARACTERISTICS Symbol Characteristic RθJC Junction to Case RθJA Junction to Ambient 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 MIN TYP MAX 0.42 40 0.9 0.35 0.7 0.25 0.5 0.20 Note: PDM Z JC, THERMAL IMPEDANCE (°C/W) θ 050-7027 Rev C 3-2003 0.45 0.30 0.15 t1 0.3 t2 0.10 0.1 0.05 Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC 0.05 0 10-5 SINGLE PULSE 10-4 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION Downloaded from Elcodis.com electronic components distributor °C/W 4 Starting Tj = +25°C, L = 3.32mH, RG = 25Ω, Peak IL = 27A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -ID27A di/dt ≤ 700A/µs VR ≤ VDSS TJ ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and information contained herein. 0.40 UNIT 1.0 Typical Preformance Curves APT5018BFLL-SFLL RC MODEL Junction temp. ( ”C) 0.161 0.00994F Power (Watts) 0.259 0.236F Case temperature ID, DRAIN CURRENT (AMPERES) 80 VGS=15 &10V 8V 60 7.5V 7V 40 6.5V 20 6V 5.5V VDS> ID (ON) x RDS (ON)MAX. 250µSEC. PULSE TEST @