HV9925
Programmable Current LED Lamp Driver IC with PWM Dimming
Features
General Description
•
•
•
•
•
•
The HV9925 is a pulse-width modulated high-efficiency
LED driver control IC with PWM dimming capabilities. It
allows efficient operation of high-brightness LED
strings from voltage sources ranging up to 400 VDC.
The HV9925 includes an internal high-voltage
switching MOSFET controlled with a fixed off-time of
approximately 10.5 µs. The LED string is driven at
constant current, thus providing constant light output
and enhanced reliability. Selecting a current sense
resistor value can externally program the output LED
current of the HV9925.
Programmable Output Current up to 50 mA
Pulse-Width Modulation (PWM) Dimming/Enable
Universal 85 VAC to 264 VAC Operation
Fixed Off-Time Buck Converter
Internal 475V Power MOSFET
Overtemperature Protection with Hysteresis
Applications
• Decorative Lighting
• Low-Power Lighting Fixtures
The peak current control scheme provides good
regulation of the output current throughout the
universal AC line voltage range of 85 VAC to 264 VAC
or DC input voltage of 20V to 400V. The HV9925 is
designed with a built-in thermal shutdown to prevent
excessive power dissipation in the IC.
Package Type
8-lead SOIC
(Top view)
RSENSE 1
8
DRAIN
GND 2
7
DRAIN
6
DRAIN
5
NC
PWMD 3
VDD 4
EP
Heat Slug
Heat slug (exposed thermal pad) is at ground potential. See Table 3-1 for pin information.
2019 Microchip Technology Inc.
DS20005723A-page 1
HV9925
Functional Block Diagram
VDD
GND
DRAIN
7.5V
PWMD
TOFF = 10.5µs
REF
+
HV9925
S
Q
R
Q
Over
Temperature
TBLANK = 300ns
RSENSE
DS20005723A-page 2
2019 Microchip Technology Inc.
HV9925
Typical Application Circuit
LED1
CIN
D1
-
AC
LEDN
ENABLE
L1
6
7
8
DRAIN
DRAIN
DRAIN
3 PWMD
HV9925
4 VDD
CDD
RSENSE
GND
1
2
RSENSE
2019 Microchip Technology Inc.
DS20005723A-page 3
HV9925
1.0
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings †
DRAIN-to-Source Breakdown Voltage, VDS(BR) .................................................................................................... +475V
Supply Voltage, VDD ..................................................................................................................................–0.3V to +10V
PWMD, RSENSE Voltage .........................................................................................................................–0.3V to +10V
Supply Current, IDD ............................................................................................................................................... +5 mA
Junction Temperature, TJ ..................................................................................................................... –40°C to +150°C
Storage Temperature, TS...................................................................................................................... –65°C to +150°C
Power Dissipation at 25°C (Note 1) ................................................................................................................... 800 mW
† Notice: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only, and functional operation of the device at those or any other conditions above those
indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for
extended periods may affect device reliability.
Note 1: The power dissipation is given for the standard minimum pad for 8-lead SOIC package without a heat slug,
and based on RθJA = 125°C/W. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the latter is determined by the user’s board design. The junction-to-ambient thermal resistance
is RθJA = 105°C/W when the part is mounted on a 0.04-square-inch pad of 1 oz copper, and RθJA = 60°C/W
when mounted on a one-square-inch pad of 1 oz copper.
ELECTRICAL CHARACTERISTICS
Electrical Specifications: The specifications are at TA = 25°C and VDRAIN = 50V unless otherwise noted.
Parameter
Sym.
Min.
Typ.
Max.
Unit
VDD
—
7.5
—
V
VDD Undervoltage Upper Threshold
VUVLO,R
4.8
—
—
V
VDD Undervoltage Lockout Hysteresis
ΔVUVLO
—
200
—
mV
IDD
—
300
500
μA
VDRAIN
20
—
400
V
RON
—
100
200
Ω
VDD Regulator Output
Operating Supply Current
Output (DRAIN)
VDRAIN Supply Voltage
On-Resistance
Conditions
VDD Rising
VDD(EXT) = 8.5V
IDRAIN = 50 mA
VDRAIN = 400V (Note 2)
CDRAIN
—
1
5
pF
ISAT
100
150
—
mA
VTH
0.435
0.47
0.525
V
Leading Edge Blanking Delay
TBLANK
200
300
400
ns
Minimum On-Time
TON(MIN)
—
—
650
ns
TOFF
8
10.5
13
μs
PWMD Input High Voltage
VPWMD,HI
2
—
—
V
PWMD Input Low Voltage
VPWMD,LO
—
—
0.8
V
RPWMD
100
200
300
kΩ
VPWMD = 5V
TOT
—
140
—
°C
Note 2
TOTHYS
—
60
—
°C
Note 2
Output Capacitance
DRAIN Saturation Current
CURRENT SENSE COMPARATOR
Threshold Voltage
OFF-TIME GENERATOR
Off-Time
PWM DIMMING
PWMD Pull-Down Resistance
THERMAL SHUTDOWN
Overtemperature Trip Limit
Temperature Hysteresis
Note 1:
2:
Note 2
Denotes the specifications which apply over the full operating ambient temperature range of
–40°C < TA < +85°C.
Denotes guarantee by design.
DS20005723A-page 4
2019 Microchip Technology Inc.
HV9925
TEMPERATURE SPECIFICATIONS
Parameter
Sym.
Min.
Typ.
Max.
Unit
Conditions
TA
–40
—
+85
°C
Operating Junction Temperature
TJ
–40
—
+125
°C
Storage Temperature
TS
–65
—
+150
°C
TJ(ABSMAX)
—
—
+150
°C
8-lead SOIC with Heat Slug
JA
—
84
—
°C/W
Note 1
8-lead SOIC with Heat Slug
JA
—
125
—
°C/W
Note 2
8-lead SOIC with Heat Slug
JA
—
105
—
°C/W
Note 3
8-lead SOIC with Heat Slug
JA
—
60
—
°C/W
Note 4
TEMPERATURE RANGE
Operating Ambient Temperature
Maximum Junction Temperature
PACKAGE THERMAL RESISTANCE
Note 1:
2:
3:
4:
Mounted on JEDEC 2s2p test PCB.
Mounted on standard minimum pad.
Mounted on a 0.04 square inch pad of 1 oz copper.
Mounted on a 1 square inch pad of 1 oz copper.
2019 Microchip Technology Inc.
DS20005723A-page 5
HV9925
2.0
TYPICAL PERFORMANCE CURVES
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g. outside specified power supply range) and therefore outside the warranted range.
200
0.485
160
ON Resistance (Ω)
Current Sense Threshold (V)
180
0.480
0.475
0.470
140
120
100
80
0.465
60
0.460
-40
-1
10
35
60
85
40
-40
110
Junction Temperature (°C)
-1
10
35
60
85
110
Junction Temperature (°C)
FIGURE 2-1:
Threshold Voltage VTH vs.
Junction Temperature TJ.
FIGURE 2-4:
ON Resistance RON vs.
Junction Temperature TJ.
13.0
1000
DRAIN Capacitance (pF)
12.5
OFF Time (μs)
12.0
11.5
11.0
10.5
10.0
100
10
9.5
9.0
-40
-1
10
35
60
85
0
110
0
10
Junction Temperature (°C)
Off-Time TOFF vs. Junction
FIGURE 2-5:
vs. VDRAIN.
580
180
570
160
30
40
DRAIN Capacitance CDRAIN
TJ = 25OC
TJ = 125OC
560
DRAIN Current (mA)
DRAIN Breakdown Voltage (V)
FIGURE 2-2:
Temperature TJ.
20
DRAIN Voltage (V)
550
540
530
520
510
140
120
100
80
60
40
500
20
490
-40
-1
10
35
60
85
110
Junction Temperature (°C)
FIGURE 2-3:
DRAIN Breakdown Voltage
VBR vs. Junction Temperature TJ.
DS20005723A-page 6
0
0
10
20
30
40
DRAIN Voltage (V)
FIGURE 2-6:
IDRAIN vs VDRAIN.
Output Characteristics
2019 Microchip Technology Inc.
HV9925
3.0
PIN DESCRIPTION
The details on the pins of HV9925 are listed in
Table 3-1. Refer to Package Type for the location of
pins.
TABLE 3-1:
PIN FUNCTION TABLE
Pin Number
Pin Name
1
RSENSE
2
GND
3
PWMD
4
VDD
5
NC
Description
Source terminal of the output switching MOSFET provided for current sense resistor
connection
Common connection for all circuits
PWM Dimming input to the IC
Power supply pin for internal control circuits. Bypass this pin with a 0.1 µF
low-impedance capacitor.
No connection
6
7
DRAIN
Drain terminal of the output switching MOSFET and a linear regulator input
8
EP
GND
Exposed backside pad. It must be connected to pin 2 and GND plane on PCB to maximize thermal performance of the package.
2019 Microchip Technology Inc.
DS20005723A-page 7
HV9925
4.0
FUNCTIONAL DESCRIPTION
The HV9925 is a PWM peak current control IC for
driving a buck converter topology in Continuous
Conduction Mode (CCM). The HV9925 controls the
output current (rather than output voltage) of the
converter that can be programmed by a single external
resistor (RSENSE) for driving a string of light-emitting
diodes (LEDs). An external enable input (PWMD) that
can be used for PWM dimming of an LED string is
provided. The typical rising and falling edge transitions
of the LED current when using the PWM dimming
feature of the HV9925 are shown in Figure 5-6 and
Figure 5-7.
When the input voltage of 20V to 400V appears at the
DRAIN pin, the internal linear regulator attempts to
maintain a voltage of 7.5 VDC at the VDD pin. Until this
voltage exceeds
the internally programmed
undervoltage upper threshold, no output switching
occurs. When the threshold is exceeded, the integrated
high-voltage switch turns on, pulling the DRAIN low. A
200 mV hysteresis is incorporated with the
undervoltage comparator to prevent oscillation.
When the voltage at RSENSE exceeds 0.47V, the
switch turns off and the DRAIN output becomes high
impedance. At the same time, a one-shot circuit that
determines the off-time of the switch (10.5 µs typical) is
activated.
A “blanking” delay of 300 ns is provided upon the
turn-on of the switch that prevents false triggering of
the current sense comparator due to leading edge
spike caused by circuit parasitics.
DS20005723A-page 8
2019 Microchip Technology Inc.
HV9925
5.0
APPLICATION INFORMATION
5.1
Selecting L1 and D1
The required value of L1 is inversely proportional to the
ripple current ∆IO in it. Setting the relative peak-to-peak
ripple current to 20%–30% of average output current in
the LED string is a good practice to ensure noise
immunity of the current sense comparator. See
Equation 5-1.
comparator if not properly managed. Minimizing these
parasitics is essential for efficient and reliable operation
of HV9925.
Coil capacitance of inductors is typically provided in the
manufacturer’s data books either directly or in terms of
the self-resonant frequency (SRF). Refer to
Equation 5-3.
EQUATION 5-3:
1
SRF = -------------------------------------- 2 L C L
EQUATION 5-1:
V O T OFF
L1 = -------------------------------I O
Where:
VO = Forward voltage of the LED string
TOFF = Off-time of the HV9925
ΔIO = Peak-to-peak ripple current in the LED string
The output current in the LED string can be calculated
as illustrated in Equation 5-2.
EQUATION 5-2:
I O
V TH
I O = ------------------- – ---------
R SENSE 2
Where:
VTH = Current sense comparator threshold
RSENSE = Current sense resistor
The ripple current introduces a peak-to-average error
in the output current setting that needs to be accounted
for. Due to the constant off-time control technique used
in the HV9925, the ripple current is nearly independent
of the input AC or DC voltage variation. Therefore, the
output current will remain unaffected by the varying
input voltage.
Adding a filter capacitor across the LED string can
reduce the output current ripple even further, thus
permitting a reduced value of L1. However, one must
keep in mind that the peak-to-average current error is
affected by the variation of TOFF. Therefore, the initial
output current accuracy might be sacrificed at large
ripple current in L1.
Another important aspect of designing an LED driver
with HV9925 is related to certain parasitic elements of
the circuit, including distributed coil capacitance of L1,
junction capacitance CJ and reverse recovery time trr of
the rectifier diode D1, capacitance of the printed circuit
board traces CPCB and output capacitance CDRAIN of
the controller itself. These parasitic elements affect the
efficiency of the switching converter and could
potentially cause false triggering of the current sense
2019 Microchip Technology Inc.
Where:
L = Inductance value
CL = Coil capacitance
Charging and discharging this capacitance every
switching cycle causes high-current spikes in the LED
string. Therefore, connecting a small capacitor CO
(~10 nF) is recommended to bypass these spikes.
Using an ultra-fast rectifier diode for D1 is
recommended to achieve high efficiency and reduce
the risk of false triggering of the current sense
comparator. Using diodes with shorter reverse
recovery time trr and lower junction capacitance CJ
achieves better performance. The reverse voltage
rating VR of the diode must be greater than the
maximum input voltage of the LED lamp.
The total parasitic capacitance present at the DRAIN
output of the HV9925 can be calculated as shown in
Equation 5-4.
EQUATION 5-4:
C P = C DRAIN + C PCB + C L + C J
When the switch turns on, the capacitance CP is
discharged into the DRAIN output of the IC. The
discharge current is typically limited to about 150 mA.
However, it may become lower at increased junction
temperature. The duration of the leading edge current
spike can be estimated as show in Equation 5-5.
EQUATION 5-5:
V IN C P
T SPIKE = ---------------------- + t rr
I SAT
To avoid false triggering of the current sense
comparator, CP must be minimized in accordance with
Equation 5-6.
DS20005723A-page 9
HV9925
EQUATION 5-6:
EQUATION 5-10:
2
I SAT T BLANK MIN – t rr
C P -------------------------------------------------------------------V IN MAX
P COND = D I O R ON + I DD V IN 1 – D
Where:
Where:
TBLANK(MIN) = Minimum blanking time of 200 ns
D = VO/VIN is the duty ratio
RON = On resistance of internal MOSFET switch
IDD = Internal linear regulator current
VIN(MAX) = Maximum instantaneous input voltage
The typical DRAIN and RSENSE voltage waveforms
are shown in Figure 5-4 and Figure 5-5.
5.2
Estimating Power Loss
Discharging the parasitic capacitance CP into the
DRAIN output of the HV9925 is responsible for the bulk
of the switching power loss. It can be estimated using
Equation 5-7.
EQUATION 5-7:
C P V IN 2
P SWITCH = ------------------------- + V IN I SAT t rr F S
2
When the LED driver is powered from the full-wave
rectified AC line input, the exact equation for
calculating the conduction loss is more complicated.
However, it can be estimated using the following
equation.
EQUATION 5-11:
2
P COND = K C I O R ON + K D I DD V AC
Where VAC is the input AC line voltage. The coefficients
KC and KD can be determined from the minimum duty
ratio DM = 0.71VO/(VAC).
Where:
0.7
FS = Switching frequency
ISAT = Saturated DRAIN current
0.6
Disregarding the voltage drop at HV9925 and D1, the
switching frequency is derived using Equation 5-8.
0.5
K D (D M)
KC (D M) 0.4
EQUATION 5-8:
0.3
V IN – V O
F S = ----------------------------V IN T OFF
When the HV9925 LED driver is powered from the
full-wave rectified AC input, the switching power loss
can be estimated as illustrated in Equation 5-9.
EQUATION 5-9:
1
P SWITCH ----------------------- V AC C P + 21 SAT t rr V AC – V O
2 T OFF
VAC is the input AC line RMS voltage.
The switching power loss associated with turn-off
transitions of the DRAIN output can be disregarded.
Due to the large amount of parasitic capacitance
connected to this switching node, the turn-off transition
occurs essentially at zero voltage.
When the HV9925 LED driver is powered from DC
input voltages, the conduction power loss can be
calculated using the following equation: Equation 5-10.
DS20005723A-page 10
0.2
0.1
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
DM
FIGURE 5-1:
Conduction Loss
Coefficients KC and KD.
5.3
EMI Filter
As with all off-line converters, selecting an input filter is
critical to obtaining good EMI. A switching side
capacitor, albeit of small value, is necessary in order to
ensure low impedance to the high frequency switching
currents of the converter. As a rule of thumb, this
capacitor should be approximately 0.1 µF/W to
0.2 µF/W of LED output power. A recommended input
filter is shown in Figure 5-2 for the following design
example:
2019 Microchip Technology Inc.
HV9925
5.4
Design Example 1
Let us design an HV9925 LED lamp driver meeting the
following specifications:
5.4.4
STEP 4. CALCULATE THE LEADING
EDGE SPIKE DURATION
Output Current: 20 mA
Use Equation 5-5 and Equation 5-6, and take DRAIN
saturation current ISAT = 100 mA (minimum) and
VIN = VAC(MAX) = 264V. The leading edge spike
duration is computed from Equation 5-15.
Load: String of 10 LED
(VF = 4.1V, maximum each)
EQUATION 5-15:
Input: Universal AC, 85–264 VAC
The schematic diagram of the LED driver is shown in
Figure 5-2.
5.4.1
STEP 1: CALCULATE L1
The output voltage VO = 10 x VF ≈ 41V (maximum).
Use Equation 5-1 assuming a 30% peak-to-peak ripple
current relative to average output current in the LED
string. See Equation 5-12.
EQUATION 5-12:
41V 10.5s
L1 = -------------------------------------- = 72mH
0.3 20mA
264V 2 31pF
T SPIKE = ---------------------------------------------- + 20ns 136ns T BLANK MIN
100mA
5.4.5
Use Equation 5-9 and Equation 5-11 to calculate the
power dissipation.
1.
1
1
C L = ---------------------------------------------- = --------------------------------------------------------------- 13pF
2
2
L1 2 SRF
68mH 2 170kHz
5.4.2
STEP 2: SELECT D1
Usually the reverse recovery characteristics of
ultra-fast rectifiers at IF = 20 mA to 50 mA are not
provided in the manufacturer’s data books. The
designer may need to experiment with different diodes
to achieve the best result.
1
P SWITCH -------------------------- 264V 31pF + 2 100mA 20ns 264V – 41V
2 10.5s
P SWITCH 130mW
2.
STEP 3: CALCULATE TOTAL
PARASITIC CAPACITANCE
Using Equation 5-4, CDRAIN = 5 pF (maximum), PCB
traces capacitance CPCB = 5 pF (typical), and the
above derived CL and CJ values, the total parasitic
capacitance is calculated in Equation 5-14.
EQUATION 5-14:
C P = 5pF + 5pF + 13pF + 8pF = 31pF
Minimum Duty Ratio (See Equation 5-17.)
EQUATION 5-17:
0.71 41V
D M = ------------------------------- 0.11
264V
3.
Conduction Power Loss (See Equation 5-18.)
KC = 0.2 and KD = 0.63 for DM = 0.11 from the
conduction loss coefficient curves in Figure 5-1.
EQUATION 5-18:
2
Select D1 with VR = 600V, trr ≈ 20 ns, (IF = 20 mA, IRR
= 100 mA) and CJ ≈ 8 pF (VF > 50V).
5.4.3
Switching Power Loss (See Equation 5-16.)
EQUATION 5-16:
Select L1 = 68 mH, I = 30 mA. Typical SRF = 170 kHz.
Calculate the coil capacitance. Refer to Equation 5-13.
EQUATION 5-13:
STEP 5: ESTIMATE THE POWER
DISSIPATION IN HV9925 AT 264
VAC
P COND = 0.20 20mA 200 + 0.63 200A 264V 50mW
4.
Total Power Dissipation at VAC(MAX)
(See Equation 5-19.)
EQUATION 5-19:
P D TOTAL = P COND + P SWITCH = 130mW + 50mW = 180mW
5.4.6
STEP 6: SELECT INPUT
CAPACITOR CIN
The output power is calculated with Equation 5-20.
EQUATION 5-20:
P OUT = 41V 20mA = 820mW
Select 0.1 µF, 400V metalized polyester film capacitor
as CIN.
2019 Microchip Technology Inc.
DS20005723A-page 11
HV9925
5.5
Design Example 2
EQUATION 5-24:
Let us now design a PWM-dimmable LED lamp driver
using the HV9925:
Input: Universal AC, 85VAC to 135 VAC
Output Current: 50 mA
135V 2 33pF
T SPIKE = ---------------------------------------------- + 35ns 98ns T BLANK MIN
100mA
5.5.5
Load: String of 12 LED (VF = 2.5V maximum each)
The schematic diagram of the LED driver is shown in
Figure 5-3. We will use an aluminum electrolytic
capacitor for CIN to prevent interruptions of the LED
current at zero crossings of the input voltage. As a rule
of thumb, 2 µF to 3 µF per each watt of the input power
is required for CIN in this case.
5.5.1
STEP 1: CALCULATE L1.
The output voltage VO = 12 x VF = 30V (maximum).
Use Equation 5-1 assuming a 30% peak-to-peak ripple
current relative to average output current in the LED
string. See Equation 5-21.
EQUATION 5-21:
30V 10.5s
L1 = -------------------------------------- = 21mH
0.3 50mA
Select L1= 22 mH, I = 60 mA. Typical SRF = 270 kHz.
Calculate the coil capacitance. See Equation 5-22.
STEP 5: ESTIMATE THE POWER
DISSIPATION IN HV9925 AT 135
VAC
Perform
the
estimation
using
Equation 5-8, and Equation 5-11.
1.
Switching Power Loss (See Equation 5-25 and
Equation 5-26)
EQUATION 5-25:
135V – 30V
F s = ------------------------------------ = 74kHz
135V 10.5s
EQUATION 5-26:
2
33pF 135V + 135V 2 100mA 35ns
P SWITCH = --------------------------------------------------------------------------------------------------------------------- 74kHz
2
P SWITCH 57mW
2.
Minimum Duty Ratio (See Equation 5-27.)
EQUATION 5-27:
30V
D M = --------------------------- 0.16
135 2
EQUATION 5-22:
1
1
C L = ---------------------------------------------- = ---------------------------------------------------------------- 15pF
L1 2 SRF 2 22mH 2 270KHz 2
5.5.2
STEP 2: SELECT D1
Select D1 with VR = 400V, trr ≈ 35 ns and
CJ < 8 pF.
5.5.3
3.
Conduction Power Loss (See Equation 5-28.)
KC = 0.25 and KD = 0.62 for DM = 0.16 from the
conduction loss coefficient curves in Figure 5-1.
EQUATION 5-28:
2
P COND = 0.25 50mA 200 + 0.62 0.5mA 135V
STEP 3: CALCULATE THE TOTAL
PARASITIC CAPACITANCE
Use Equation 5-4. Take CDRAIN = 5 pF (maximum),
CPCB = 5 pF (typical), and the above derived CL and CJ
values. The total parasitic capacitance is calculated
from Equation 5-23.
P COND = 167mW
4.
Total
Power
Dissipation
(See Equation 5-29.)
in
HV9925
EQUATION 5-29:
P D TOTAL = 57mW + 167mW = 224mW
EQUATION 5-23:
5.5.4
Equation 5-7,
C P = 5pF + 5pF + 15pF + 8pF = 33pF
5.5.6
STEP 4: CALCULATE THE LEADING
EDGE SPIKE DURATION
The output power is calculated from Equation 5-30.
Use Equation 5-5 and Equation 5-6, and take
ISAT = 100 mA (minimum) and VIN = VAC(MAX) = 135V.
The leading edge spike duration is computed from
Equation 5-24.
DS20005723A-page 12
STEP 6: SELECT INPUT
CAPACITOR CIN
EQUATION 5-30:
P OUT = 30V 50mA = 1.5W
Select 3.3 µF, 250V aluminum electrolytic capacitor as
CIN.
2019 Microchip Technology Inc.
HV9925
D2
D4
D3
L2
CIN2
LED1
CIN
CO
D5
LED10
D1
AC Line
85 - 264V
VRD1
8
3
HV9925
F1
4
6
1
CDD
L1
7
2
RSENSE
FIGURE 5-2:
1)
Universal 85 VAC to 264 VAC LED Lamp Driver. (IO = 20 mA, VO = 41V from Example
D3
D2
AC Line
85 - 135V
LED1
CIN
D4
CO
D5
-
D1
LED12
R1
8
3
HV9925
100 ~ 200Hz
4
CDD
L1
7
6
1
2
RSENSE
FIGURE 5-3:
from Example 2)
85 VAC to 135 VAC LED Lamp Driver with PWM Dimming. (IO = 50 mA, VO = 30V
2019 Microchip Technology Inc.
DS20005723A-page 13
HV9925
FIGURE 5-4:
Switching Waveforms.
CH1: VRSENSE, CH2: VDRAIN.
FIGURE 5-6:
PWM Dimming–Rising
Edge. CH4: 10 × IOUT.
FIGURE 5-5:
Switch-On
Transition–Leading Edge Spike. CH1: VRSENSE,
CH2: VDRAIN.
FIGURE 5-7:
PWM Dimming–Falling
Edge. CH4: 10 × IOUT.
DS20005723A-page 14
2019 Microchip Technology Inc.
HV9925
6.0
PACKAGING INFORMATION
6.1
Package Marking Information
8-lead SOIC
Example
XXXXXXXX
e3 YYWW
NNN
HV9925SG
e3 1913
217
Legend: XX...X
Y
YY
WW
NNN
e3
*
Note:
Product Code or Customer-specific information
Year code (last digit of calendar year)
Year code (last 2 digits of calendar year)
Week code (week of January 1 is week ‘01’)
Alphanumeric traceability code
Pb-free JEDEC® designator for Matte Tin (Sn)
This package is Pb-free. The Pb-free JEDEC designator ( e3 )
can be found on the outer packaging for this package.
In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for product code or customer-specific information. Package may or
not include the corporate logo.
2019 Microchip Technology Inc.
DS20005723A-page 15
HV9925
8-Lead SOIC (Narrow Body w/Heat Slug) Package Outline (SG)
4.90x3.90mm body, 1.70mm height (max), 1.27mm pitch
D1
D
8
8
Exposed
Thermal
Pad Zone
E2
E
E1
Note 1
(Index Area
D/2 x E1/2)
1
1
Top View
Bottom View
θ1
A
View B
h
h
A
A2
Note 1
Seating
Plane
e
A1
L
b
L1
L2
Gauge
Plane
θ
Seating
Plane
A
Side View
View A - A
View B
Note: For the most current package drawings, see the Microchip Packaging Specification at www.microchip.com/packaging.
Note:
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LGHQWL¿HU DQHPEHGGHGPHWDOPDUNHU RUDSULQWHGLQGLFDWRU
Symbol
MIN
Dimension
NOM
(mm)
MAX
A
A1
A2
b
1.25*
0.00
1.25
0.31
-
-
-
-
1.70
0.15
1.55*
0.51
D
D1
E
E1
E2
e
4.80* 3.30† 5.80* 3.80* 2.29†
4.90
-
6.00
3.90
-
5.00* 3.81† 6.20* 4.00* 2.79†
1.27
BSC
h
L
0.25
0.40
-
-
0.50
1.27
L1
1.04
REF
L2
0.25
BSC
ș
ș
0O
5O
-
-
8O
15O
JEDEC Registration MS-012, Variation BA, Issue E, Sept. 2005.
7KLVGLPHQVLRQLVQRWVSHFL¿HGLQWKH-('(&GUDZLQJ
7KLVGLPHQVLRQGLIIHUVIURPWKH-('(&GUDZLQJ
Drawings not to scale.
DS20005723A-page 16
2019 Microchip Technology Inc.
HV9925
APPENDIX A:
REVISION HISTORY
Revision A (December 2019)
• Converted Supertex Doc# DSFP-HV9925 to
Microchip
• Updated the quantity of the 8-lead SOIC (with
heat slug) SG package from 2500/Reel to
3300/Reel to align it with the actual BQM
• Made minor text changes throughout the
document
2019 Microchip Technology Inc.
DS20005723A-page 17
HV9925
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, contact your local Microchip representative or sales office.
XX
PART NO.
-
Package
Options
Device
X
-
Environmental
X
Media Type
Device:
HV9925
=
Programmable Current LED Lamp Driver IC
with PWM Dimming
Packages:
SG
=
8-lead SOIC with Heat Slug
Environmental:
G
=
Lead (Pb)-free/RoHS-compliant Package
Media Type:
(Blank)
=
3300/Reel for an SG Package
DS20005723A-page 18
Examples:
a) HV9925SG-G:
Programmable Current LED Lamp
Driver IC with PWM Dimming,
8-lead SOIC w/Heat Slug Package,
3300/Reel
2019 Microchip Technology Inc.
Note the following details of the code protection feature on Microchip devices:
•
Microchip products meet the specification contained in their particular Microchip Data Sheet.
•
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
•
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
•
Microchip is willing to work with the customer who is concerned about the integrity of their code.
•
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Information contained in this publication regarding device
applications and the like is provided only for your convenience
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR
WARRANTIES OF ANY KIND WHETHER EXPRESS OR
IMPLIED, WRITTEN OR ORAL, STATUTORY OR
OTHERWISE, RELATED TO THE INFORMATION,
INCLUDING BUT NOT LIMITED TO ITS CONDITION,
QUALITY, PERFORMANCE, MERCHANTABILITY OR
FITNESS FOR PURPOSE. Microchip disclaims all liability
arising from this information and its use. Use of Microchip
devices in life support and/or safety applications is entirely at
the buyer’s risk, and the buyer agrees to defend, indemnify and
hold harmless Microchip from any and all damages, claims,
suits, or expenses resulting from such use. No licenses are
conveyed, implicitly or otherwise, under any Microchip
intellectual property rights unless otherwise stated.
Trademarks
The Microchip name and logo, the Microchip logo, Adaptec,
AnyRate, AVR, AVR logo, AVR Freaks, BesTime, BitCloud, chipKIT,
chipKIT logo, CryptoMemory, CryptoRF, dsPIC, FlashFlex,
flexPWR, HELDO, IGLOO, JukeBlox, KeeLoq, Kleer, LANCheck,
LinkMD, maXStylus, maXTouch, MediaLB, megaAVR, Microsemi,
Microsemi logo, MOST, MOST logo, MPLAB, OptoLyzer,
PackeTime, PIC, picoPower, PICSTART, PIC32 logo, PolarFire,
Prochip Designer, QTouch, SAM-BA, SenGenuity, SpyNIC, SST,
SST Logo, SuperFlash, Symmetricom, SyncServer, Tachyon,
TempTrackr, TimeSource, tinyAVR, UNI/O, Vectron, and XMEGA
are registered trademarks of Microchip Technology Incorporated in
the U.S.A. and other countries.
APT, ClockWorks, The Embedded Control Solutions Company,
EtherSynch, FlashTec, Hyper Speed Control, HyperLight Load,
IntelliMOS, Libero, motorBench, mTouch, Powermite 3, Precision
Edge, ProASIC, ProASIC Plus, ProASIC Plus logo, Quiet-Wire,
SmartFusion, SyncWorld, Temux, TimeCesium, TimeHub,
TimePictra, TimeProvider, Vite, WinPath, and ZL are registered
trademarks of Microchip Technology Incorporated in the U.S.A.
Adjacent Key Suppression, AKS, Analog-for-the-Digital Age, Any
Capacitor, AnyIn, AnyOut, BlueSky, BodyCom, CodeGuard,
CryptoAuthentication, CryptoAutomotive, CryptoCompanion,
CryptoController, dsPICDEM, dsPICDEM.net, Dynamic Average
Matching, DAM, ECAN, EtherGREEN, In-Circuit Serial
Programming, ICSP, INICnet, Inter-Chip Connectivity, JitterBlocker,
KleerNet, KleerNet logo, memBrain, Mindi, MiWi, MPASM, MPF,
MPLAB Certified logo, MPLIB, MPLINK, MultiTRAK, NetDetach,
Omniscient Code Generation, PICDEM, PICDEM.net, PICkit,
PICtail, PowerSmart, PureSilicon, QMatrix, REAL ICE, Ripple
Blocker, SAM-ICE, Serial Quad I/O, SMART-I.S., SQI,
SuperSwitcher, SuperSwitcher II, Total Endurance, TSHARC,
USBCheck, VariSense, ViewSpan, WiperLock, Wireless DNA, and
ZENA are trademarks of Microchip Technology Incorporated in the
U.S.A. and other countries.
SQTP is a service mark of Microchip Technology Incorporated in
the U.S.A.
The Adaptec logo, Frequency on Demand, Silicon Storage
Technology, and Symmcom are registered trademarks of Microchip
Technology Inc. in other countries.
GestIC is a registered trademark of Microchip Technology Germany
II GmbH & Co. KG, a subsidiary of Microchip Technology Inc., in
other countries.
All other trademarks mentioned herein are property of their
respective companies.
© 2019, Microchip Technology Incorporated, All Rights Reserved.
For information regarding Microchip’s Quality Management Systems,
please visit www.microchip.com/quality.
2019 Microchip Technology Inc.
ISBN: 978-1-5224-5410-6
DS20005723A-page 19
Worldwide Sales and Service
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DS20005723A-page 20
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2019 Microchip Technology Inc.
05/14/19
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