TECHNICAL DATA
PNP SILICON SMALL SIGNAL TRANSISTOR
Qualified per MIL-PRF-19500/392
Devices
Qualified Level
2N3485A
JAN
JANTX
JANTXV
2N3486A
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current -- Continuous
Total Power Dissipation
@ TA = +250C(1)
@ TC = +250C(2)
Operating & Storage Junction Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
PT
TJ, Tstg
2N3485A
2N3486A
Unit
60
60
5.0
600
0.4
2.0
-55 to +200
Vdc
Vdc
Vdc
mAdc
W
W
0
C
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance Junction-to-Ambient
Junction-to-Case
1) Derate linearly 2.28 mW/0C above TA = +250C
2) Derate linearly 11.43 mW/0C above TC = +250C
Symbol
RθJA
Max.
0.439
RθJC
87
TO-46*
(TO-206AB)
Unit
mC/W
0
0
C/W
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics
Symbol
Min.
V(BR)CEO
60
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 10 mAdc
Collector-Base Cutoff Current
VCB = 50 Vdc
VCB = 60 Vdc
Emitter-Base Cutoff Current
VEB = 3.5 Vdc
VEB = 5.0 Vdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Vdc
ICBO
10
10
ηAdc
µAdc
IEBO
50
10
ηAdc
µAdc
120101
Page 1 of 2
2N3485A, 2N3486A JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Symbol
Min.
hFE
40
75
40
100
40
100
40
100
40
50
Max.
Unit
ON CHARACTERISTICS (3)
Forward-Current Transfer Ratio
IC = 0.1 mAdc, VCE = 10 Vdc
IC = 1.0 mAdc, VCE = 10 Vdc
IC = 10 mAdc, VCE = 10 Vdc
IC = 150 mAdc, VCE = 10 Vdc
IC = 500 mAdc, VCE = 10 Vdc
2N3485A
2N3486A
2N3485A
2N3486A
2N3485A
2N3486A
2N3485A
2N3486A
2N3485A
2N3486A
Collector-Emitter Saturation Voltage
IC = 150 mAdc, IB = 15 mAdc
IC = 500 mAdc, IB = 50 mAdc
Base-Emitter Saturation Voltage
IC = 150 mAdc, IB = 15 mAdc
IC = 500 mAdc, IB = 50 mAdc
120
300
VCE(sat)
0.4
1.6
Vdc
VBE(sat)
1.3
2.6
Vdc
DYNAMIC CHARACTERISTICS
Small-Signal Forward Current Transfer Ratio
IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz
2N3485A
2N3486A
Magnitude of Small-Signal Forward Current Transfer Ratio
IC = 50 mAdc, VCE = 20 Vdc, f = 100 MHz
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz
Input Capacitance
VEB = 2.0 Vdc, IC = 0, 100 kHz ≤ f ≤ 1.0 MHz
(3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
h
fe
40
100
hfe
2.0
10
Cobo
8.0
pF
Cibo
30
pF
120101
Page 2 of 2
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