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JANS1N6327DUS/TR

JANS1N6327DUS/TR

  • 厂商:

    ACTEL(微芯科技)

  • 封装:

    MELF

  • 描述:

    VOLTAGE REGULATOR

  • 详情介绍
  • 数据手册
  • 价格&库存
JANS1N6327DUS/TR 数据手册
1N6309US thru 1N6355DUS Available on commercial versions Qualified Levels: JAN, JANTX, JANTXV and JANS VOIDLESS HERMETICALLY SEALED 500mV GLASS ZENER DIODES Qualified per MIL-PRF-19500/533 DESCRIPTION This Zener voltage regulator series is military qualified and is ideal for high-reliability applications where a failure cannot be tolerated. These industry-recognized 0.5 watt Zener voltage regulators are hermetically sealed with voidless-glass construction using an internal metallurgical bond. It includes Zener selections from 2.4 to 200 volts in standard 5% tolerances as well as tighter 1% and 2% tolerances. They are also available in axial leaded packages. Microsemi also offers numerous other Zener products to meet higher and lower power ratings in both thru-hole and surface mount packages. B-SQ Melf Package Important: For the latest information, visit our website http://www.microsemi.com. FEATURES Also available in: • Surface mount equivalent of JEDEC registered 1N6309 thru 1N6355 series. • • • Voltage tolerances of 1%, 2% and 5% are available. (See part nomenclature.) Voidless hermetically sealed glass package. Internal “Category I” metallurgical bonds for 1N6321US thru 1N6355US and “Category III” for 1N6309US thru 1N6320US. JAN, JANTX, JANTXV, and JANS reliability levels are available per MIL-PRF-19500/533. RoHS compliant versions available (commercial grade only). • • DO-35 package (axial-leaded) 1N6309 – 1N6355D APPLICATIONS / BENEFITS • • • • • • • Small surface mount Melf (“D” Package). Regulates voltage over a broad operating current and temperature range. Extensive selection from 2.4 to 200 volts. Standard and tight voltage tolerances available. Extremely robust construction. Non-sensitive to ESD per MIL-STD-750 method 1020. Inherently radiation hard as described in Microsemi “MicroNote 050”. MAXIMUM RATINGS Parameters/Test Conditions Junction and Storage Temperature Thermal Resistance Junction-to-End Cap (1) 1N6309US – 1N6320US 1N6321US – 1N6355US Thermal Resistance Junction-to-Ambient (2) Steady-State Power Dissipation @ TEC = 150 oC Forward Voltage @ 1.0 A Solder Temperature @ 10 s Symbol TJ and TSTG Value -65 to +175 RӨJEC 35 21 240 0.5 1.4 260 RӨJA PD VF TSP Unit o C o C/W o C/W W V o C Notes: 1. See Figure 1 and Figure 2 for derating. 2. TA = +55 °C before derating on printed circuit board (PCB), PCB = FR4 .0625 inch (1.59 mm) 1-layer 1Oz Cu, horizontal, still air, pads = .067 inch (1.70 mm) x .105 inch (2.67 mm); strip = .030 inch (0.76 mm) x 1 inch (25.4 mm) long, RΘJA with a defined thermal resistance condition included is measured at IZ = as defined in the characteristics and ratings table herein. MSC – Lawrence 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 or (978) 620-2600 Fax: (978) 689-0803 MSC – Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: www.microsemi.com T4-LDS-0193-1, Rev. 1 (111899) ©2011 Microsemi Corporation Page 1 of 6 1N6309US thru 1N6355DUS MECHANICAL and PACKAGING • • • • • • CASE: Hermetically sealed voidless hard glass with tungsten slugs. TERMINALS: End caps are copper with tin/lead (Sn/Pb) or RoHS compliant matte/tin (commercial grade only) finish. POLARITY: Cathode indicated by band. TAPE & REEL option: Standard per EIA-481-B. Consult factory for quantities. WEIGHT: 0.0945 grams. See Package Dimensions on last page. PART NOMENCLATURE JAN 1N6309 C US (e3) Reliability Level JAN = JAN Level JANTX = JANTX Level JANTXV = JANTXV Level JANS = JANS Level Blank = Commercial RoHS Compliance e3 = RoHS Compliant (available on commercial grade only) Blank = non-RoHS Compliant MELF Package JEDEC type number (see Electrical Characteristics table) SYMBOLS & DEFINITIONS Definition Symbol IR IZ, IZT, IZK IZM IZSM VF VWM VZ ZZT or ZZK Zener Voltage Tolerance C = +/- 2% D = +/- 1% Blank = +/- 5% Reverse Current: The maximum reverse (leakage) current that will flow at the specified voltage and temperature. Regulator Current: The dc regulator current (IZ), at a specified test point (IZT), near breakdown knee (IZK). Maximum Regulator (Zener) Current: The maximum rated dc current for the specified power rating. Maximum Zener Surge Current: The non-repetitive peak value of Zener surge current at a specified wave form. Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current. Working Peak Voltage: The maximum peak voltage that can be applied over the operating temperature range. This is also referred to as Standoff Voltage. Zener Voltage: The Zener voltage the device will exhibit at a specified current (IZ) in its breakdown region. Dynamic Impedance: The small signal impedance of the diode when biased to operate in its breakdown region at a specified rms current modulation (typically 10% of IZT or IZK) and superimposed on IZT or IZK respectively. T4-LDS-0193-1, Rev. 1 (111899) ©2011 Microsemi Corporation Page 2 of 6 1N6309US thru 1N6355DUS ELECTRICAL CHARACTERISTICS @ 25oC TYPE Note 1 VZ2 VZ1 Test Dynamic Dynamic Max. Voltage NOM. MIN. Current Impedance Impedance Current Reg. +/-5% @ IZ1 IZ2 ZZK ZZ @ IZ2 IZM VZ(reg) @ IZ2 250 uA @ (∆VZ) 250 µA Note 2 Volts Volts mA ohms ohms mA 1N6309US 1N6310US 1N6311US 1N6312US 1N6313US 1N6314US 1N6315US 2.4 2.7 3.0 3.3 3.6 3.9 4.3 1.1 1.2 1.3 1.5 1.8 2.0 2.4 20 20 20 20 20 20 20 30 30 29 27 25 23 20 1,200 1,300 1,400 1,400 1,400 1,700 1,700 177 157 141 128 117 108 99 1N6316US 4.7 2.8 20 17 1,500 1N6317US 5.1 3.3 20 14 1N6318US 1N6319US 1N6320US 1N6321US 1N6322US 1N6323US 1N6324US 1N6325US 1N6326US 1N6327US 1N6328US 1N6329US 1N6330US 1N6331US 1N6332US 1N6333US 1N6334US 1N6335US 1N6336US 1N6337US 1N6338US 1N6339US 1N6340US 1N6341US 1N6342US 1N6343US 1N6344US 1N6345US 1N6346US 1N6347US 1N6348US 1N6349US 1N6350US 1N6351US 1N6352US 1N6353US 1N6354US 1N6355US 5.6 6.2 6.8 7.5 8.2 9.1 10.0 11.0 12.0 13.0 15.0 16.0 18.0 20.0 22.0 24.0 27.0 30.0 33.0 36.0 39.0 43.0 47.0 51.0 56.0 62.0 68.0 75.0 82.0 91.0 100.0 110.0 120.0 130.0 150.0 160.0 180.0 200.0 4.3 5.2 6.0 6.6 7.5 8.4 9.1 10.0 11.0 11.9 13.8 14.7 16.6 18.5 20.4 22.3 25.2 28.0 30.9 33.7 36.6 40.4 44.2 48.0 52.7 58.4 64.1 70.8 77.4 86.0 94.5 104.0 113.0 122 141 151 170 189 20 20 20 20 20 20 20 20 20 9.5 8.5 7.8 7.0 6.2 5.6 5.2 4.6 4.2 3.8 3.4 3.2 3.0 2.7 2.5 2.2 2.0 1.8 1.7 1.5 1.4 1.3 1.1 1.0 0.95 0.85 0.80 0.68 0.65 8 3 3 4 5 6 6 7 7 8 10 12 14 18 20 24 27 32 40 50 55 65 75 85 100 125 155 180 220 270 340 500 600 850 1,000 1,200 1,500 1,800 Surge Reverse Max. Max. Max. Max. Current Voltage Reverse Reverse Noise Temp. 8.3 ms VR Current Current Density Coeff. of ND Square IR1 @ VR IR2 @ VR Zener o o Wave 25 C 150 C @ 250 µA Voltage IZSM 1 to 3 kHz αVZ µA µA 1.0 1.0 1.0 1.0 1.0 1.0 1.0 100 60 30 5 3 2 2 200 150 100 20 12 12 12 µV /√Hz 1 1 1 1 1 1 1 1.27 1.5 5 12 1 0.40 1.17 2.0 5 12 1 0.40 0.30 0.35 0.40 0.40 0.50 0.50 0.50 0.55 0.55 0.70 0.75 0.85 0.95 1.05 1.15 1.30 1.45 1.60 1.75 1.90 2.10 2.25 2.50 2.70 2.90 3.20 3.40 3.80 4.20 4.40 4.80 5.20 5.60 7.00 7.50 9.00 12.00 1.10 0.97 1.23 1.16 1.07 0.97 0.89 0.83 0.77 0.71 0.62 0.58 0.52 0.47 0.43 0.39 0.35 0.31 0.28 0.260 0.240 0.220 0.200 0.180 0.170 0.150 0.130 0.125 0.115 0.100 0.095 0.085 0.080 0.070 0.065 0.060 0.050 0.045 2.5 3.5 4.0 5.0 6.0 7.0 8.0 8.5 9.0 9.9 11.0 12.0 14.0 15.0 17.0 18.0 21.0 23.0 25.0 27.0 30 33 36 39 43 47 52 56 62 69 76 84 91 99 114 122 137 152 5 5 2 2 1 1 1 1 1 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 10 10 50 30 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 2 5 5 5 20 40 80 100 100 100 100 100 100 100 100 100 100 100 100 100 100 80 80 80 80 80 80 80 80 80 80 80 80 80 80 80 80 80 Volts Amps Volts 1.50 1.50 1.50 1.60 1.60 1.60 0.90 2.50 2.20 2.00 1.80 1.65 1.50 1.40 90 0.50 1,300 83 1,200 800 400 400 400 500 500 550 550 550 600 600 600 500 500 500 500 500 600 600 700 800 900 1,000 1,200 1,300 1,500 1,600 1,800 2,100 2,400 2,800 3,200 4,100 4,500 5,000 5,600 6,500 76 68 63 57 52 47 43 39 35 33 28 27 24 21 19 18 16 14 13 12 11 9.9 9.0 8.3 7.6 6.8 6.3 5.7 5.2 4.7 4.3 3.9 3.5 3.3 2.8 2.7 2.4 2.1 o %/ C -.085 -.080 -.075 -.070 -.065 -.060 -.045 +.020 -.028 +.032 -.020 +.035 +.050 +.060 +.062 +.068 +.075 +.076 +.079 +.082 +.083 +.083 +.084 +.084 +.085 +.086 +.087 +.088 +.090 +.091 +.092 +.093 +.094 +.095 +.095 +.096 +.097 +.099 +.101 +.103 +.105 +.108 +.110 +.110 +.110 +.110 +.110 +.110 +.110 +.110 NOTES: 1. Standard voltage tolerance is 5 percent. Tighter tolerances are available in plus/minus 1 and 2 percent voltage tolerances. (See part nomenclature.) 2. Voltage regulation VZ(reg) is the measured voltage change at thermal equilibrium between the current of 10% and 50% of Maximum Zener Current IZM when the lead temperature is maintained at 25 °C = +8 °C, -2 °C. T4-LDS-0193-1, Rev. 1 (111899) ©2011 Microsemi Corporation Page 3 of 6 1N6309US thru 1N6355DUS Maximum Power Dissipation - Milliwatts GRAPHS TEC (oC) End Cap FIGURE 1 - (1N6309US – 1N6320US) TEC Temperature-Power Derating Curve o Maximum Power Dissipation - Milliwatts RӨJEC = 35 C/W (dc operation) TEC (oC) End Cap FIGURE 2 - (1N6321US – 1N6355US) TEC Temperature-Power Derating Curve o RӨJEC = 21 C/W (dc operation) T4-LDS-0193-1, Rev. 1 (111899) ©2011 Microsemi Corporation Page 4 of 6 1N6309US thru 1N6355DUS Maximum Power Dissipation - Milliwatts GRAPHS (continued) TPCB (oC) Ambient FIGURE 3 TPCB Temperature-Power Derating Curve o RӨJA = 240 C/W (dc operation) T4-LDS-0193-1, Rev. 1 (111899) ©2011 Microsemi Corporation Page 5 of 6 1N6309US thru 1N6355DUS PACKAGE DIMENSIONS NOTE: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Dimensions are pre-solder dip. 4. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology. ©2011 Microsemi Corporation INCH MILLIMETERS Min Max Min Max BD .070 .085 1.78 2.16 BL .165 .195 4.19 4.95 ECT .019 .028 0.48 0.71 S T4-LDS-0193-1, Rev. 1 (111899) DIMENSIONS Symbol .003 min 0.08 min Page 6 of 6
JANS1N6327DUS/TR
物料型号:1N6309US至1N6355DUS

器件简介:这是一系列军用级别的齐纳电压调节器,适用于高可靠性应用,不能容忍故障发生。这些0.5瓦的齐纳电压调节器采用无空洞玻璃封装和内部冶金键合,提供从2.4到200伏的标准5%容差以及更严格的1%和2%容差选择。

引脚分配:文档中未明确说明引脚分配,但根据描述,这些器件采用MELF封装,带有铜端盖,阳极通过带子标识。

参数特性:包括工作温度范围(-65°C至+175°C)、热阻(例如1N6309US至1N6320US的ReJEC为35°C/W)、最大耗散功率(0.5W)、最大正向电压(例如1.4V)、焊接温度(260°C)等。

功能详解:这些齐纳二极管在宽广的工作电流和温度范围内调节电压,具有非常坚固的结构,对静电放电不敏感,并具有固有的辐射硬度。

应用信息:适用于小尺寸表面安装MELF("D"封装),在宽广的工作电流和温度范围内调节电压,提供从2.4到200伏的广泛选择。

封装信息:齐纳二极管采用密封的无空洞硬质玻璃封装,端盖为铜材质,有锡/铅或符合RoHS标准的哑光/锡(商业等级)表面处理。
JANS1N6327DUS/TR 价格&库存

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