INCH-POUND
The documentation and process conversion measures
necessary to comply with this document shall be
completed by 10 October 2019.
MIL-PRF-19500/291Y
w/AMENDMENT 1
10 July 2019
SUPERSEDING
MIL-PRF-19500/291Y
27 March 2019
PERFORMANCE SPECIFICATION SHEET
TRANSISTOR, PNP, SILICON, SWITCHING, DEVICE TYPES 2N2906A AND 2N2907A,
ENCAPSULATED (THROUGH HOLE AND SURFACE MOUNT PACKAGES) AND UNENCAPSULATED,
RADIATION HARDNESS ASSURANCE,
QUALITY LEVELS JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
* 1.1 Scope. This specification covers the performance requirements for PNP, silicon, switching transistors. Four
levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each encapsulated device type, and
two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated device, as specified in
MIL-PRF-19500. Provisions for radiation hardness assurance (RHA) to eight radiation levels is provided for quality
levels JANTXV, JANS, JANHC, and JANKC.
1.2 Physical dimensions.
1.2.1 Package outlines. The device package outlines for the encapsulated device types are as follows: Three
terminal round metal can TO-206AA (formerly TO-18) in accordance with figure 1, four terminal surface mount device
(SMD) package in accordance with figure 2, and three or four terminal SMD package in accordance with figure 3.
* 1.2.2 Unencapsulated die. The dimensions and topography for JANHC and JANKC unencapsulated die are as
follows: The B version die (JANHCB and JANKCB) is in accordance with figure 4, the D version die (JANHCD and
JANKCD) is in accordance with figure 5, and the E version die (JANHCD and JANKCD) is in accordance with
figure 6.
1.3 Maximum ratings. Unless otherwise specified TA = +25°C.
Types
All devices
IC
VCBO
VEBO
VCEO
TJ and TSTG
mA dc
V dc
V dc
V dc
°C
-600
-60
-5
-60
-65 to +200
Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime,
ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor@dla.mil. Since
contact information can change, you may want to verify the currency of this address information using the
ASSIST Online database at https://assist.dla.mil.
AMSC N/A
FSC 5961
MIL-PRF-19500/291Y
w/AMENDMENT 1
1.3 Maximum ratings. Unless otherwise specified TA = +25°C - Continued.
Types
2N2906A, L,
2N2907A, L
2N2906AUA,
2N2907AUA
2N2906AUB,
and UBN
2N2907AUB
and UBN
2N2906AUBC
and UBCN
2N2907AUBC
and UBCN
(1)
(2)
(3)
(4)
PT
TA = +25°C
(1) (2)
PT
TC = +25°C
(1) (2)
PT
PT
TSP(IS) =
TSP(AM) =
+25°C (1) (2) +25°C (1) (2)
RθJA
(2) (3)
RθJC
(2) (3)
RθJSP(IS)
(2) (3)
RθJSP(AM)
(2) (3)
W
W
W
W
°C/W
°C/W
°C/W
°C/W
0.5
0.5
(4) 0.5
(4) 0.5
(4) 0.5
1.0
1.0
N/A
N/A
N/A
N/A
N/A
1.0
1.0
1.0
N/A
N/A
1.5
1.5
N/A
325
325
(4) 325
(4) 325
(4) 325
150
150
N/A
N/A
N/A
N/A
N/A
110
110
90
N/A
N/A
40
40
N/A
(4) 0.5
N/A
1.0
N/A
(4) 325
N/A
90
N/A
(4) 0.5
N/A
1.0
N/A
(4) 325
N/A
90
N/A
(4) 0.5
N/A
1.0
N/A
(4) 325
N/A
90
N/A
For derating, see figure 7,figure 8, figure 9, figure 10, and figure 11.
See 3.3 for abbreviations.
For thermal curves, see figure 12, figure 13, figure 14, figure 15, and figure 16.
For non-thermal conductive PCB or unknown PCB surface mount conditions in free air, substitute figure 7 and
figure 12 for the UA, UB, UBC, UBN, and UBCN package and use RθJA.
1.4 Primary electrical characteristics. Unless otherwise specified TA = +25°C.
Limits
(2) (3)
Min
Max
hFE1
IC = -0.1 mA dc
(2)
(3)
40
75
hFE2
IC = -1.0 mA dc
(2)
(3)
40
175
hFE at VCE = -10 V dc
hFE3
IC = -10 mA dc
(2)
(3)
100
450
40
100
|hfe|
Cobo
Limits f = 100 MHz VCE = -20 V dc, 100 kHz ≤ f ≤ 1 MHz
(2) (3)
IC = -20 mA dc
VCB = -10 V dc, IE = 0
Min
Max
Limits
(2) (3)
Min
Max
hFE4 (1)
IC = -150 mA dc
(2)
(3)
40
120
100
300
40
Switching (saturated)
ton
toff
See figure 1
See figure 1
pF
ns
ns
8
45
300
2.0
hFE5 (1)
IC = -500 mA dc
(2)
(3)
VCE(sat)1 (1)
IC = -150 mA dc
IB = -15 mA dc
VCE(sat)2 (1)
IC = -500 mA dc
IB = -50 mA dc
VBE(sat)1 (1)
IC = -150 mA dc
IB = -15 mA dc
VBE(sat)2 (1)
IC = -500 mA dc
IB = -50 mA dc
V dc
V dc
V dc
V dc
-0.4
-1.6
-0.6
-1.3
-2.6
(1) Pulsed see 4.5.1.
(2) Includes device type 2N2906A and package designators "L", "UA", "UB", "UBC", "UBN", and "UBCN".
(3) Includes device type 2N2907A and package designators "L", "UA", "UB", "UBC", "UBN", and "UBCN".
2
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MIL-PRF-19500/291Y
w/AMENDMENT 1
1.5 Part or Identifying Number (PIN). The PIN is in accordance with MIL-PRF-19500 and as specified herein.
See 6.5 for PIN construction example and 6.6 for a list of available PINs.
1.5.1 JAN certification mark and quality level designators.
1.5.1.1 Encapsulated devices. The quality level designators for encapsulated devices that are applicable for this
specification sheet from the lowest to the highest level are as follows: "JAN", "JANTX", "JANTXV", and "JANS".
1.5.1.2 Unencapsulated die. The quality level designators for unencapsulated die that are applicable for this
specification sheet from the lowest to the highest level are as follows: "JANHC" and "JANKC".
1.5.2 RHA designator. The RHA levels that are applicable for this specification sheet from lowest to highest for
quality levels JANS and JANKC are as follows: "M", "D", "P", "L", "R", "F", "G", and "H".
1.5.3 Device type. The designation system for the device types covered by this specification sheet are as follows.
1.5.3.1 First number and first letter symbols. The semiconductors of this specification sheet use the first number
and letter symbols "2N".
1.5.3.2 Second number symbols. The second number symbols for the semiconductors covered by this
specification sheet are as follows: "2906" and "2907".
1.5.4 Suffix symbols. The following suffix letters are incorporated in the PIN for this specification sheet.
1.5.4.1 Modified version designator. All devices use an "A" suffix symbol that indicates an electrical parameter
modified version of the device versus the non-suffix device. Non-A suffix devices are not covered by this
specification.
1.5.4.2 Package designators. The suffix symbols (or lack thereof) that designate the package outline for the
devices covered by this specification sheet are as follows:
Blank
A blank designator identifies that the package is a TO-206AA (see figure 1).
UA
This designator indicates a 4-terminal SMD package (see figure 2).
UB
This designator indicates a 4-terminal metal lid (used as a shield and connected to fourth pad) SMD
package (see figure 3).
UBC
This designator indicates a 4-terminal ceramic lid (lid is braze-ring connected to fourth pad) SMD
package (see figure 3).
UBN
This designator indicates a 3-terminal isolated metal lid SMD package (see figure 3).
UBCN
This designator indicates a 3-terminal isolated ceramic lid SMD package (see figure 3).
1.5.5 Lead finish. The lead finishes applicable to this specification sheet are listed on QML-19500.
* 1.5.6 Die identifiers for unencapsulated devices. The manufacturer die identifiers that are applicable for this
specification sheet are "B" (see figure 4), "D" (see figure 5), and “E” (see figure 6).
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MIL-PRF-19500/291Y
w/AMENDMENT 1
Symbol
Dimensions
Inches
Notes
Millimeters
Min
Max
Min
Max
CD
.178
.195
4.52
4.95
CH
.170
.210
4.32
5.33
HD
.209
.230
5.31
5.84
LC
.100 TP
2.54 TP
4
0.41
0.53
6, 7
LL
.500
.750
12.70
19.05
6, 7, 8
LU
.016
.019
0.41
0.48
6, 7
1.27
6, 7
.250
6.35
P
.100
2.54
Q
.030
0.76
4
.028
.048
0.71
1.22
9
TW
.036
.046
0.91
1.17
10
0.25
11
.010
α
NOTES:
1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
12.
45° TP
LU
LL
45° TP
SEATING
PLANE
LD
HD
6, 7
TL
r
L1
L2
5
.021
L2
CH
Q
.016
.050
P
4
LD
L1
CD
α
1
2
CL
TW
3
r
TL
5
LC
Dimension are in inches. Millimeters are given for general information only.
Terminal 1 = emitter, terminal 2 = base, terminal 3 = collector.
The collector shall be internally connected to the case.
Body contour optional within zone defined by dimensions CD, HD, and Q.
Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007
inch (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC.
The device may be measured by direct methods.
Dimension LU applies between dimensions L1 and L2. Dimension LD applies between dimensions L2 and
LL minimum. Diameter is uncontrolled in dimension L1 and beyond dimension LL minimum.
All three leads.
For "L" suffix devices, dimension LL = 1.5 inches (38.10 mm) minimum and 1.75 inches (44.45 mm)
maximum.
Dimension TL measured from maximum HD.
Beyond r (radius) maximum, dimension TW shall be held for a minimum length of .011 inch (0.28 mm).
Dimension r (radius) applies to both inside corners of tab.
In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
FIGURE 1. Physical dimensions for TO-206AA package (similar to TO-18).
4
MIL-PRF-19500/291Y
w/AMENDMENT 1
BL
CH
BW
COLLECTOR
BW2
1
2
EMITTER
SEATING PLANE
BL2
LH
3
PIN 1 IDENTIFIER
LW
2
1
4
L3
LS
3
BASE
LW2
DETAIL A
SEE
DETAIL A
LL1
LL2
LL1
Symbol
BL
BL2
BW
BW2
CH
L3
LH
LL1
LL2
LS
LW
LW2
Dimensions
Inches
Millimeters
Min
Max
Min
Max
.215
.225
5.46
5.71
.225
5.71
.145
.155
3.68
3.93
.155
3.93
.061
.075
1.55
1.90
.003
0.08
.029
.042
0.74
1.07
.032
.048
0.81
1.22
.072
.088
1.83
2.23
.045
.055
1.14
1.39
.022
.028
0.56
0.71
.006
.022
0.15
0.56
Note
3
5
5
NOTES:
1. Dimensions are in inches. Millimeters are given for general information only.
2. Terminal 1 = collector, terminal 2 = emitter, terminal 3 = base, terminal 4 = not connected.
3. Dimension "CH" controls the overall package thickness. When a window lid is used, dimension "CH" must
increase by a minimum of .010 inch (0.254 mm) and a maximum of .040 inch (1.020 mm).
4. The corner shape (square, notch, radius) may vary at the manufacturer's option, from that shown on the
drawing.
5. Dimensions "LW2" minimum and "L3" minimum and the appropriate castellation length define an
unobstructed three-dimensional space traversing all of the ceramic layers in which a castellation was
designed. (Castellations are required on bottom two layers, optional on top ceramic layer.) Dimension
"LW2" maximum define the maximum width and depth of the castellation at any point on its surface.
Measurement of these dimensions may be made prior to solder dipping.
6. The coplanarity deviation of all terminal contact points, as defined by the device seating plane, shall not
exceed .006 inch (0.15 mm) for solder dipped leadless chip carriers.
7. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
FIGURE 2. Physical dimensions for 4 terminal SMD package (UA).
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MIL-PRF-19500/291Y
w/AMENDMENT 1
ORIENTATION
KEY
CL
BH
BW
CW
BL
LL2
UB, UBC, UBN, AND UBCN
SEE
DETAIL A
r1
r2
3
2
LW
3 PLS
SEE
DETAIL A
r1
3
4
1
2
LL1
3 PLS
LS1
LS2
LID
LW
3 PLS
r
3 PLS
DETAIL A
1
LL1
3 PLS
LS1
LS2
LID
CERAMIC
CERAMIC
4
4
UB AND UBC ONLY
UBN AND UBCN ONLY
FIGURE 3. Physical dimensions for 3 and 4 terminal SMD packages (UB, UBN, UBC, and UBCN).
6
MIL-PRF-19500/291Y
w/AMENDMENT 1
Dimensions
Symbol
BL
NOTES:
1.
2.
3.
4.
5.
6.
7.
8.
Inches
Millimeters
Note
Min
Max
Min
Max
.115
.128
2.92
3.25
BW
.085
.108
2.16
2.74
BH
.046
.056
1.17
1.42
UB only, 3
BH
.046
.056
1.17
1.42
UBN only, 4
BH
.055
.069
1.40
1.75
UBC only, 5
BH
.055
.069
1.40
1.75
UBCN only, 6
CL
.128
3.25
CW
.108
2.74
LL1
.022
.038
0.56
0.97
3 PLS
LL2
.014
.035
0.356
0.89
3 PLS
LS1
.035
.040
0.89
1.02
LS2
.071
.079
1.80
2.01
LW
.016
.024
0.41
0.61
r
.008
0.20
5
r1
.012
0.30
7
r2
.022
0.56
UB and UBC only, 7
Dimensions are in inches. Millimeters are given for general information only.
Hatched areas on package denote metallized areas.
UB only: Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Pad 4 = Shielding connected to the metal lid.
UBN only: Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Isolated lid with three pads only.
UBC (ceramic lid) only: Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Pad 4 = Shielding connected to
the lid.
UBCN (ceramic lid) only: Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Isolated lid with 3 pads only.
For design reference only.
In accordance with ASME Y14.5M, diameters are equivalent to ɸx symbology.
FIGURE 3. Physical dimensions for 3 and 4 terminal SMD packages (UB, UBN, UBC, and UBCN) – Continued.
7
MIL-PRF-19500/291Y
w/AMENDMENT 1
E
B
Physical characteristics (B-version):
1. Die size:
.023 x .023 inch ±.002 inch (0.584 mm x 0.584 mm ±0.0508 mm).
2. Die thickness:
.010 ±.0015 inch (0.254 mm ±0.038 mm).
3. Base pad:
B = .0042 x .0042 inch (0.107 mm x 0.107 mm).
4. Emitter pad:
E = .0042 x .0042 inch (0.107 mm x 0.107 mm).
5. Collector pad:
Backside.
6. Top metal:
Aluminum 15,000 Å minimum, 18,000 Å nominal.
7. Backside metal:
A. Al/Ti/Ni/Ag 15k Å/5k Å/10k Å/10k Å.
B. Gold 2.5 k Å minimum, 3.0 k Å nominal.
C. Eutectic die mount - No metal.
8. Glassivation:
Si3N4, 2k Å minimum, 2.2k Å nominal.
FIGURE 4. JANHC and JANKC (B-version) die dimensions.
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MIL-PRF-19500/291Y
w/AMENDMENT 1
E
B
Physical characteristics (D-version):
1. Die size:
.020 x .020 inch square (0.508 mm x 0.508 mm).
2. Die thickness:
.008 ±.0016 inch (0.203 mm ±0.041 mm).
3. Base pad:
B = .004 x .004 inch (0.101 mm x 0.101 mm).
4. Emitter pad:
E = .004 x .004 inch (0.101 mm x 0.101 mm).
5. Collector:
Backside.
6. Top metal:
Aluminum, 20,000 ±2,000 Å.
7. Backside metal:
Gold, 6,500 ±1,950 Å.
8. Glassivation:
SiO2, 7,500 ±1,500 Å.
FIGURE 5. JANHC and JANKC (D-version) die dimensions.
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MIL-PRF-19500/291Y
w/AMENDMENT 1
Physical characteristics (E-version):
1. Die Size:
.025 x .025 Inch + .002 Inch (0.635 mm x 0.635 mm + 0.0508)
2. Die Thickness:
.010 Inch + .002 Inch (0.254 mm + 0.508 mm)
3. Base pad:
.004 x .004 Inch (0.109 mm x 0.109 mm)
4. Emitter pad:
.004 x .004 Inch (0.109 mm x 0.109 mm
5. Collector:
Backside.
6. Top Metal:
Aluminum, 16,000 Å Minimum, 24,000 Å Nominal
7. Back Metal:
Gold, 4,500 Å Minimum, 5,500 Å Nominal
* FIGURE 6. JANHC and JANKC (E-version) die dimensions.
10
MIL-PRF-19500/291Y
w/AMENDMENT 1
2. APPLICABLE DOCUMENTS
2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This
section does not include documents cited in other sections of this specification or recommended for additional
information or as examples. While every effort has been made to ensure the completeness of this list, document
users are cautioned that they must meet all specified requirements of documents cited in sections 3 and 4 of this
specification, whether or not they are listed.
2.2 Government documents.
2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a
part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are
those cited in the solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATIONS
MIL-PRF-19500
–
Semiconductor Devices, General Specification for.
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-750
–
Test Methods For Semiconductor Devices.
(Copies of these documents are available online at https://quicksearch.dla.mil.)
2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the
text of this document and the references cited herein, the text of this document takes precedence. Nothing in this
document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained.
3. REQUIREMENTS
3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein.
3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a
manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list before
contract award (see 4.2 and 6.3).
3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as
specified in MIL-PRF-19500 and as follows.
PCB
RθJA
RθJC
RθJSP(AM)
RθJSP(IS)
TSP(AM)
TSP(IS)
UA
UB, UBC
UBN, UBCN
Printed circuit board
Thermal resistance junction to ambient.
Thermal resistance junction to case.
Thermal resistance junction to solder pads (adhesive mount to PCB).
Thermal resistance junction to solder pads (infinite sink mount to PCB).
Temperature of solder pads (adhesive mount to PCB).
Temperature of solder pads (infinite sink mount to PCB).
Surface mount case outlines (see figure 2).
Surface mount case outlines (see figure 3).
Surface mount case outlines (see figure 3).
* 3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in
MIL-PRF-19500, and on figure 1, figure 2, figure 3, figure 4, figure 5, and figure 6 herein. Epoxy die attach may be
used when a moisture monitor plan has been submitted and approved by the qualifying activity.
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w/AMENDMENT 1
3.4.1 Lead finish. Lead finish shall be solderable as defined in MIL-PRF-19500, MIL-STD-750 and herein. Where
a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2).
3.4.2 Pin-out. The pin-out of the encapsulated devices shall be as shown on figures 1, 2, and 3 as applicable.
3.5 Marking.
3.5.1 All packaged device types except those having "UB" in the suffix. Marking shall be in accordance with
MIL-PRF-19500.
3.5.2 Marking of device types with "UB" in the suffix (see 1.5.4.2). Marking on the UB, UBC, UBN, and UBCN
packages shall consist of an abbreviated PIN, the date code, and the manufacturer’s symbol or logo. The prefixes
JAN, JANTX, JANTXV, and JANS can be abbreviated as J, JX, JV, and JS respectively. The "2N" prefix and the
"AUB" and "AUBC" suffix can also be omitted. The RHA designator (see 1.5.2) shall immediately precede (or
replace) the device "2N" identifier (depending upon degree of abbreviation required).
3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance
characteristics are as specified in 1.3, 1.4, and table I.
3.7 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table I herein.
3.8 RHA. RHA requirements and test levels shall be as defined in MIL-PRF-19500.
3.9 Workmanship. Transistors shall be processed in such a manner as to be uniform in quality and shall be free
from other defects that will affect life, serviceability, or appearance.
4. VERIFICATION
4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:
a.
Qualification inspection (see 4.2).
b.
Screening (see 4.3).
c.
Conformance inspection (see 4.4 and tables I, II, and III).
d.
Element evaluation (see 4.6).
4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500, and as specified
herein.
4.2.1 JANHC and JANKC qualification. JANHC and JANKC qualification inspection shall be in accordance with
MIL-PRF-19500.
4.2.2 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In
case qualification was awarded to a prior revision of the specification sheet that did not request the performance of
table III tests, the tests specified in table III herein that were not performed in the prior revision shall be performed on
the first inspection lot of this revision to maintain qualification.
4.2.3 Radiation hardened devices. See 4.4.4 and MIL-PRF-19500.
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4.3 Screening of encapsulated devices (quality levels JANTX, JANTXV, and JANS only). Screening shall be in
accordance with table E-IV of MIL-PRF-19500, and as specified herein. The following measurements shall be made
in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable.
Measurement
Screen
JANS level
JANTXV and JANTX level
1b
Required
Required (JANTXV only)
2
Optional
Optional
3a
Required
Required
3b
Not applicable
Not applicable
Required (see 4.3.2)
Required (see 4.3.2)
4
Required
Optional
5
Required
Not required
6
Not applicable
Not applicable
8
Required
Not required
9
ICBO2, hFE4, read and record
Not applicable
10
11
24 hours minimum
24 hours minimum
ICBO2; hFE4;
ΔICBO2 = 100 percent of initial value or
5 nA dc, whichever is greater.
ΔhFE4 = ±15 percent
ICBO2, hFE4
(1) 3c
12
See 4.3.1
See 4.3.1
15
Subgroups 2 and 3 of table I herein;
ΔICBO2 = 100 percent of initial value or 5
nA dc, whichever is greater;
ΔhFE4 = ±15 percent
Required
Subgroup 2 of table I herein;
ΔICBO2 = 100 percent of initial value or
5 nA dc, whichever is greater;
ΔhFE4 = ±15 percent
Not required
16
Required
Not required
(2) 13
(1) Shall be performed anytime after temperature cycling, screen 3a; TX and TXV do not need to be repeated in
screening requirements.
(2) Thermal impedance (ZθJX) is not required in screen 13.
4.3.1 Power burn-in conditions. Power burn-in conditions shall be as follows: VCB = -10 to -30 V dc. Power shall
be applied to achieve TJ = +135°C minimum using a minimum PD = 75 percent of PT maximum, TA ambient rated as
defined in 1.3. With approval of the qualifying activity and preparing activity, alternate burn-in criteria (hours, bias
conditions, TJ, and mounting conditions) for JANTX and JANTXV quality levels may be used. A justification
demonstrating equivalence is required. In addition, the manufacturing site’s burn-in data and performance history will
be essential criteria for burn-in modification approval.
13
MIL-PRF-19500/291Y
w/AMENDMENT 1
* 4.3.2 Thermal impedance measurements. The thermal impedance measurements shall be performed in
accordance with method 3131 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, and tMD
(and VC where appropriate). The thermal impedance limit used in screen 3c of 4.3 herein and subgroup 2 of table I
shall comply with the thermal impedance graphs in figure 12, figure 13, figure 14, figure 15, and figure 16 (less than
or equal to the curve value at the same tH time) and shall be less than the process determined statistical maximum
limit as outlined in method 3131. See table III, subgroup 4 herein.
4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500, and as
specified herein. If alternate screening is being performed in accordance with MIL-PRF-19500, a sample of screened
devices shall be submitted to and pass the requirements of subgroups 1 and 2, of table I herein, inspection only
(table E-VIB, group B, subgroup 1 is not required to be performed again if group B has already been satisfied in
accordance with 4.4.2).
4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500 and table I
herein.
4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with 4.4.2.1 for quality level JANS
and 4.4.2.2 for quality levels JAN, JANTX, and JANTXV.
4.4.2.1 Quality level JANS. Group B inspection for quality level JANS shall be conducted in accordance with the
conditions specified for subgroup testing in table E–VIA of MIL-PRF-19500 and herein. Delta measurements shall be
in accordance with 4.7 herein.
Subgroup
Method
Condition
B4
1037
VCB = -10 to -30 V dc. Adjust device current, or power, to achieve a minimum ΔTJ of
100°C.
B5
1027
VCB = -10 V dc; PD ≥ 100 percent of maximum rated PT (see 1.3).
(NOTE: If a failure occurs, resubmission shall be at the test conditions of the original
sample.)
Option 1: 96 hours minimum sample size in accordance with MIL-PRF-19500,
table E-VIA, adjust TA or PD to achieve TJ = +275°C minimum.
Option 2: 216 hours minimum, sample size = 45, c = 0; adjusted TA or PD to achieve a
TJ = +225°C minimum.
B6
3131
RθJA, RθJC only (see 1.3).
14
MIL-PRF-19500/291Y
w/AMENDMENT 1
4.4.2.2 Quality levels JAN, JANTX, and JANTXV. Group B inspection for quality levels JAN, JANTX, and
JANTXV shall be conducted in accordance with the conditions specified in table E–VIC (small die flow) of
MIL-PRF-19500 and herein. Delta measurements shall be taken after each step and shall be in accordance with 4.7
herein. All catastrophic failures during CI shall be analyzed to the extent possible to identify root cause and
corrective action. Whenever a failure is identified as wafer lot or wafer processing related, the entire wafer lot and
related devices assembled from the wafer lot shall be rejected unless an appropriate determined corrective action to
eliminate the failure mode has been implemented and the devices from the wafer lot are screened to eliminate the
failure mode.
Step
Method
Condition
1
1026
Steady-state life: 1,000 hours minimum, VCB = -10 dc, power and ambient shall be applied to
achieve TJ = +150°C minimum using a minimum of PD = 75 percent of maximum rated PT as
defined in 1.3. n = 45 devices, c = 0. The sample size may be increased and the test time
decreased so long as the devices are stressed for a total of 45,000 device hours minimum,
and the actual time of test is at least 340 hours.
2
1048
Blocking life, TA = +150°C, VCB = 80 percent of rated voltage, 48 hours minimum.
n = 45 devices, c = 0.
3
1032
High-temperature life (non-operating), t = 340 hours, TA = +200°C. n = 22, c = 0.
4.4.2.2.1 Sample selection. Samples selected for small die flow group B inspection shall be in accordance with all
of the following requirements:
a.
Samples shall be selected from an inspection lot that has been submitted to and passed table I, subgroup 2,
conformance inspection.
b.
When the final lead finish is solder or any plating prone to oxidation at high temperature, the samples for life
test (step 1) may be tested prior to the application of final lead finish.
c.
Separate samples may be used for each step.
4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table E-VII of MIL-PRF-19500, and in 4.4.3.1 for quality level JANS and 4.4.3.2 for quality levels
JAN, JANTX, and JANTXV. Delta measurements shall be in accordance with table I, subgroup 2 and 4.7 herein.
4.4.3.1 Quality level JANS.
Subgroup
Method
Condition
C2
2036
Test condition E, (not applicable for UA, UB, UBC, UBN, and UBCN devices).
C6
1026
1,000 hours, VCB = -10 V dc, power and ambient temperature shall be applied to
the device to achieve TJ = +150°C minimum, and minimum power dissipation of
75 percent of max rated PT (see 1.3 herein); n = 45, c = 0. The sample size may
be increased and the test time decreased as long as the devices are stressed for
a total of 45,000 device hours minimum, and the actual time of test is at least 340
hours.
15
MIL-PRF-19500/291Y
w/AMENDMENT 1
4.4.3.2 Quality levels JAN, JANTX, and JANTXV.
Subgroup
Method
Condition
C2
2036
Test condition E, (not applicable for UA, UB, UBC, UBN, and UBCN devices).
C5
3131
RθJA RθJC only (see 1.3).
C6
Not applicable.
4.4.3.3 Sample selection. Samples for subgroups in group C shall be chosen at random from any inspection lot
containing the intended package type and lead finish procured to the same specification which is submitted to and
passes table I tests herein for conformance inspection. When the final lead finish is solder or any plating prone to
oxidation at high temperature, the samples for C6 life test may be tested prior to the application of final lead finish.
Testing of a subgroup using a single device type enclosed in the intended package type shall be considered as
complying with the requirements for that subgroup.
4.4.4 Group D inspection. Conformance inspection for radiation hardness assured JANS and JANTXV types shall
include the group D tests specified in table II herein. These tests shall be performed as required in accordance with
MIL-PRF-19500 and method 1019 of MIL-STD-750, for total ionizing dose or method 1017 of MIL-STD-750 for
neutron fluence as applicable (see 6.2 herein), except group D, subgroup 2 may be performed separate from other
subgroups. Alternate package options may also be substituted for the testing provided there is no adverse effect to
the fluence profile.
4.4.5 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table E-IX of MIL-PRF-19500 and as specified in table III herein. Delta measurements shall be in
accordance with the applicable steps of 4.7.
4.5 Method of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.
4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of
MIL-STD-750.
4.5.2 Input capacitance. This test shall be conducted in accordance with method 3240 of MIL-STD-750, except
the output capacitor shall be omitted.
4.5.3 Displacement damage characterization. For RHA devices, each supplier shall perform a displacement
damage characterization. The characterization shall demonstrate exposure versus data and does not indicate pass
or fail criteria. The exposure shall be conducted in accordance with method 1017 of MIL-STD-750. The following
details shall apply:
a.
Samples may be taken from any wafer of the qualification lot.
b.
As a minimum, testing shall be at 2E+12 n/cm 2 plus two additional neutron fluence levels chosen by the
supplier.
c.
If the device degrades less than 5 percent of the specification at the highest neutron fluence level, a single
data point may be sufficient.
Alternate package options may be substituted for characterization. The displacement damage characterization
data shall be made available from the supplier.
4.6 Element evaluation of unencapsulated die. The element evaluation of unencapsulated die shall be in
accordance with appendix G of MIL-PRF-19500. For subgroup 4, the burn-in duration for the JANKC level shall
follow the JANS requirements and the JANHC shall follow the JANTX requirements.
16
MIL-PRF-19500/291Y
w/AMENDMENT 1
4.7 Delta measurements. Delta measurements shall be as specified below:
Step
MIL-STD-750
Inspection
Method
Symbol
Limit
Conditions
1
Collector-base cutoff
current
3036
Bias condition D,
VCB = -50 V dc
ΔICB02
(1)
100 percent of initial value
or 10 nA dc, whichever is
greater.
2
Forward current
transfer ratio
3076
VCE = -10 V dc;
IC = -150 mA dc;
pulsed see 4.5.1
ΔhFE4
(1)
±25 percent change from
initial reading.
(1) Devices which exceed the table I limits for this test shall not be accepted.
TABLE I. Group A inspection.
MIL-STD-750
Inspection 1/
Method
Conditions
Subgroup 1 2/
*
Visual and mechanical
inspection 3/
2071
Solderability 3/ 4/
2026
n = 15 leads, c = 0
Resistance to solvents
3/ 4/ 5/
1022
n = 15 devices, c = 0
Salt atmosphere 4/ 6/
1041
n = 6 devices, c = 0
Temperature cycling 3/ 4/
(air to air)
1051
Test condition C, 25 cycles
n = 22 devices, c = 0
Hermetic seal 4/
Fine leak
Gross leak
1071
n = 22 devices, c = 0
Electrical measurements 4/
Table I, subgroup 2
Bond strength 3/ 4/
2037
Precondition
TA = +250°C at t = 24 hours or
TA = +300°C at t = 2 hours
n = 11 wires, c = 0
Decap internal visual
(design verification) 4/
2075
n = 4 devices, c = 0
See footnotes at end of table.
17
Limit
Symbol
Min
Unit
Max
MIL-PRF-19500/291Y
w/AMENDMENT 1
TABLE I. Group A inspection - Continued.
MIL-STD-750
Inspection 1/
Method
Limit
Symbol
Conditions
Min
Unit
Max
Subgroup 2
Thermal impedance 7/
3131
See 4.3.2
ZθJX
Collector to base cutoff
current
3036
Bias condition D; VCB = -60 V dc
ICBO1
-10
µA dc
Cutoff current, emitter to
base
3061
Bias condition D; VEB = -5 V dc
IEBO1
-10
µA dc
Breakdown voltage, collector
to emitter
3011
Bias condition D; IC = -10 mA dc;
pulsed (see 4.5.1)
V(BR)CEO
Collector to emitter cutoff
current
3041
Bias condition C; VCE = -50 V dc
ICES
-50
nA dc
Collector to base cutoff
current
3036
Bias condition D; VCB = -50 V dc
ICBO2
-10
nA dc
Emitter to base cutoff current
3061
Bias condition D; VEB = -4 V dc
IEBO2
-50
nA dc
Forward-current transfer ratio
2N2906A 8/
2N2907A 8/
3076
VCE = -10 V dc; IC = -0.1 mA dc
hFE1
Forward-current transfer ratio
2N2906A 8/
2N2907A 8/
3076
VCE = -10 V dc; IC = -1.0 mA dc
hFE2
Forward-current transfer ratio
2N2906A 8/
2N2907A 8/
3076
VCE = -10 V dc; IC = -10 mA dc
hFE3
Forward-current transfer ratio
3076
VCE = -10 V dc; IC = -150 mA dc;
pulsed (see 4.5.1)
hFE4
2N2906A 8/
2N2907A 8/
See footnotes at end of table.
18
°C/W
-60
V dc
40
75
40
100
175
450
40
100
40
100
120
300
MIL-PRF-19500/291Y
w/AMENDMENT 1
TABLE I. Group A inspection - Continued.
MIL-STD-750
Inspection 1/
Method
Limit
Symbol
Conditions
Min
Unit
Max
Subgroup 2 - continued.
Forward-current transfer
ratio
2N2906A 8/
2N2907A 8/
3076
VCE = -10 V dc; IC = -500 mA dc;
pulsed (see 4.5.1)
hFE5
Collector-emitter saturation
voltage
3071
IC = -150 mA dc; IB = -15 mA dc,
pulsed (see 4.5.1)
VCE(sat)1
-0.4
V dc
Collector-emitter saturation
voltage
3071
IC = -500 mA dc; IB = -50 mA dc;
pulsed (see 4.5.1)
VCE(sat)2
-1.6
V dc
Base-emitter saturation
voltage
3066
Test condition A; IC = -150 mA dc;
IB = -15 mA dc; pulsed (see 4.5.1)
VBE(sat)1
-1.3
V dc
Base-emitter saturation
voltage
3066
Test condition A; IC = -500 mA dc;
IB = -50 mA dc; pulsed (see 4.5.1)
VBE(sat)2
-2.6
V dc
ICBO3
-10
µA dc
40
50
-0.6
Subgroup 3
High temperature operation
Collector to base cutoff
current
TA = +150°C
3036
Low temperature operation
Forward-current transfer
ratio
2N2906A 8/
2N2907A 8/
Bias condition D; VCB = -50 V dc
TA = -55°C
3076
VCE = -10 V dc; IC = -10 mA dc
hFE6
20
50
Subgroup 4
Small-signal short-circuit
forward current transfer
ratio
3206
VCE = -10 V dc; IC = -1 mA dc;
f = 1 kHz
2N2906A 8/
2N2907A 8/
hfe
40
100
See footnotes at end of table.
19
MIL-PRF-19500/291Y
w/AMENDMENT 1
TABLE I. Group A inspection - Continued.
MIL-STD-750
Inspection 1/
Method
Limit
Symbol
Conditions
Min
Unit
Max
Subgroup 4 - continued.
Forward-current transfer
ratio
3076
VCE = -10 V dc; IC = -500 mA dc;
pulsed (see 4.5.1)
hFE5
Magnitude of smallsignal short- circuit
forward current transfer
ratio
3306
VCE = -20 V dc; IC = -20 mA dc;
f = 100 MHz
|hfe|
Open circuit output
capacitance
3236
VCB = -10 V dc; IE = 0;
100 kHz ≤ f ≤ 1 MHz
Cobo
8
pF
Input capacitance (output
open- circuited)
3240
VEB = -2.0 V dc; IC = 0;
100 kHz ≤ f ≤ 1 MHz; see 4.5.2.
Cibo
30
pF
Saturated turn-on time
(See figure 17)
ton
45
ns
Saturated turn-off time
(See figure 18)
toff
300
ns
2.0
Subgroups 5, 6, and 7
Not applicable
1/
2/
3/
4/
5/
6/
7/
8/
For sampling plan see MIL-PRF-19500.
For resubmission of failed test subgroup of table I, double the sample size of the failed test or sequence of
tests. A failure in table I, subgroup 1 shall not require retest of the entire subgroup. Only the failed test shall be
rerun upon submission.
Separate samples may be used.
Not required for JANS devices.
Not required for laser marked devices.
Required only for laser marked devices. Not required for non-corrosion prone base metals.
For end-point measurements, this test is required for the following subgroups:
Group B, subgroup 3, 4, and 5 (JANS).
Group B, step 1 (TX and TXV).
Group C, subgroup 2 and 6.
Includes device types with package designators "L", "UA", "UB", "UBC", "UBN", and "UBCN".
20
MIL-PRF-19500/291Y
w/AMENDMENT 1
TABLE II. Group D inspection.
MIL-STD-750
Inspection 1/ 2/ 3/
Method
Limit
Symbol
Conditions
Min
Unit
Max
Subgroup 1 4/
Neutron irradiation
1017
Neutron exposure VCES = 0 V
Collector to base cutoff current
3036
Bias condition D; VCB = -60 V dc
ICBO1
-20
µA dc
Cutoff current, emitter to base
3061
Bias condition D; VEB = -5 V dc
IEBO1
-20
µA dc
Breakdown voltage, collector to
emitter
3011
Bias condition D; IC = -10 mA dc;
pulsed (see 4.5.1)
V(BR)CEO
Collector to emitter cutoff current
3041
Bias condition C; VCE = -50 V dc
ICES
-100
nA dc
Collector to base cutoff current
3036
Bias condition D; VCB = -50 V dc
ICBO2
-20
nA dc
Emitter to base cutoff current
3061
Bias condition D; VEB = -4 V dc
IEBO2
-100
nA dc
Forward-current transfer ratio
M through H2N2906A
M through H2N2907A
3076
VCE = -10 V dc; IC = -0.1 mA dc
[hFE1] 5/
Forward-current transfer ratio
M through H2N2906A
M through H2N2907A
3076
VCE = -10 V dc; IC = -1.0 mA dc
[hFE2] 5/
Forward-current transfer ratio
M through H2N2906A
M through H2N2907A
3076
VCE = -10 V dc; IC = -10 mA dc
[hFE3] 5/
Forward-current transfer ratio
M through H2N2906A
M through H2N2907A
3076
VCE = -10 V dc; IC = -150 mA dc
[hFE4] 5/
Forward-current transfer ratio
M through H2N2906A
M through H2N2907A
3076
VCE = -10 V dc; IC = -500 mA dc
[hFE5] 5/
Collector-emitter saturation
voltage
3071
IC = -150 mA dc; IB = -15 mA dc
VCE(sat)1
-.46
V dc
Collector-emitter saturation
voltage
3071
IC = -500 mA dc; IB = -50 mA dc
VCE(sat)2
-1.84
V dc
Base-emitter saturation voltage
3066
Test condition A; IC = -150 mA dc;
IB = -15 mA dc; pulsed (see 4.5.1)
VBE(sat)1
-1.5
V dc
Base-emitter saturation voltage
3066
Test condition A; IC = -500 mA dc;
IB = -50 mA dc; pulsed (see 4.5.1)
VBE(sat)2
See footnotes at end of table.
21
-60
V dc
[20]
[37.5]
[20]
[50]
175
450
[20]
[50]
[20]
[50]
120
300
[20]
[25]
-0.6
-3.0
MIL-PRF-19500/291Y
w/AMENDMENT 1
TABLE II. Group D inspection - Continued.
MIL-STD-750
Inspection 1/ 2/ 3/
Method
Limit
Symbol
Conditions
Min
Unit
Max
Subgroup 2
Total dose irradiation
1019
Gamma exposure VCES = -48 V
Collector to base cutoff current
3036
Bias condition D; VCB = -60 V dc
ICBO1
-20
µA dc
Cutoff current, emitter to base
3061
Bias condition D; VEB = -5 V dc
IEBO1
-20
µA dc
Breakdown voltage, collector to
emitter
3011
Bias condition D; IC = -10 mA dc;
pulsed (see 4.5.1)
V(BR)CEO
Collector to emitter cutoff current
3041
Bias condition C; VCE = -50 V dc
ICES
-100
nA dc
Collector to base cutoff current
3036
Bias condition D; VCB = -50 V dc
ICBO2
-20
nA dc
Emitter to base cutoff current
3061
Bias condition D; VEB = -4 V dc
IEBO2
-100
nA dc
Forward-current transfer ratio
M through H2N2906A
M through H2N2907A
3076
VCE = -10 V dc; IC = -0.1 mA dc
[hFE1] 5/
Forward-current transfer ratio
M through H2N2906A
M through H2N2907A
3076
VCE = -10 V dc; IC = -1.0 mA dc
[hFE2] 5/
Forward-current transfer ratio
M through H2N2906A
M through H2N2907A
3076
VCE = -10 V dc; IC = -10 mA dc
[hFE3] 5/
Forward-current transfer ratio
M through H2N2906A
M through H2N2907A
3076
VCE = -10 V dc; IC = -150 mA dc
[hFE4] 5/
Forward-current transfer ratio
M through H2N2906A
M through H2N2907A
Collector-emitter saturation
voltage
3076
VCE = -10 V dc; IC = -500 mA dc
[hFE5] 5/
3071
IC = -150 mA dc; IB = -15 mA dc;
VCE(sat)1
Collector-emitter saturation
voltage
3071
IC = -500 mA dc; IB = -50 mA dc;
VCE(sat)2
Base-emitter saturation voltage
3066
Test condition A; IC = -150 mA dc;
IB = -15 mA dc; pulsed (see 4.5.1)
VBE(sat)1
Test condition A; IC = -500 mA dc;
IB = -50 mA dc; pulsed (see 4.5.1)
VBE(sat)2
Base-emitter saturation voltage
1/
2/
3/
4/
5/
3066
-60
V dc
[20]
[37.5]
[20]
[50]
175
400
[20]
[50]
[20]
[50]
[20]
[25]
-0.6
120
300
-.46
V dc
-1.84
V dc
-1.5
V dc
-3.0
V dc
Tests to be performed on all devices receiving radiation exposure.
For sampling plan, see MIL-PRF-19500.
Electrical characteristics apply to the corresponding L, UA, UB, UBC, UBN, and UBCN suffix versions unless otherwise
noted.
See 6.2.f herein.
See method 1019, of MIL-STD-750, for how to determine [hFE] by first calculating the delta (1/hFE) from the pre-and
post-radiation hFE. Notice the [hFE] is not the same as hFE and cannot be measured directly. The [hFE] value can never
exceed the pre-radiation minimum hFE that it is based upon.
22
MIL-PRF-19500/291Y
w/AMENDMENT 1
TABLE III. Group E inspection (all quality levels) - for qualification only.
MIL-STD-750
Inspection
Method
Subgroup 1
Temperature cycling
(air to air)
1051
Hermetic seal
Fine leak
Gross leak
1071
Electrical measurements
Test condition C, 500 cycles.
1037
Electrical measurements
VCB = -10 V dc, 6,000 cycles. Adjust device
current, or power, to achieve a minimum ΔTJ of
100°C.
45 devices
c=0
See table I, subgroup 2 and 4.7 herein.
Subgroup 4
Thermal resistance
45 devices
c=0
See table I, subgroup 2 and 4.7 herein.
Subgroup 2
Intermittent life
Sample plan
Conditions
3131
Thermal impedance curves
RθJSP(IS) may be calculated but shall be
measured once in the same package with a
similar die size to confirm calculations (may
apply to multiple slash sheets).
RθJSP(AM) need be calculated only.
See MIL-PRF-19500, table E-IX, subgroup 4.
Subgroup 5
15 devices
c=0
Sample size
N/A
Not applicable
Subgroup 6
ESD
1020
Subgroup 8
Reverse stability
1033
Condition B.
1017
See 4.5.3.
Subgroup 12
Neutron irradiation
23
45 devices
c=0
MIL-PRF-19500/291Y
w/AMENDMENT 1
TEMPERATURE-POWER DERATING CURVE
TA =+25°C; DEVICE TYPES 2N2906A, 2N2906AL, 2N2907A, AND 2N2907AL
NOTES:
1. This is the true inverse of the worst case thermal resistance value. All devices are capable of operating at
≤ TJ specified on this curve. Any parallel line to this curve will intersect the appropriate power for the
desired maximum TJ allowed.
2. Derate design curve constrained by the maximum junction temperatures and power rating specified. (See
1.3 herein.)
3. Derate design curve chosen at TJ ≤ +150°C, where the maximum temperature of electrical test is
performed.
4. Derate design curve chosen at TJ ≤ +125°C, and +110°C to show power rating where most users want to
limit TJ in their application.
* FIGURE 7. Temperature-power derating for TO-206AA package (RθJA) leads .125 inch (3.18 mm) PCB.
24
MIL-PRF-19500/291Y
w/AMENDMENT 1
TEMPERATURE-POWER DERATING CURVE
TC =+25°C; DEVICE TYPES 2N2906A, 2N2906AL, 2N2907A, AND 2N2907AL
NOTES:
1. This is the true inverse of the worst case thermal resistance value. All devices are capable of operating
at ≤ TJ specified on this curve. Any parallel line to this curve will intersect the appropriate power for the
desired maximum TJ allowed.
2. Derate design curve constrained by the maximum junction temperatures and power rating specified. (See
1.3 herein.)
3. Derate design curve chosen at TJ ≤ +150°C, where the maximum temperature of electrical test is
performed.
4. Derate design curve chosen at TJ ≤ +125°C, and +110°C to show power rating where most users want to
limit TJ in their application.
* FIGURE 8. Temperature-power derating for TO-206AA package (RθJC), base case mount.
25
MIL-PRF-19500/291Y
w/AMENDMENT 1
TEMPERATURE-POWER DERATING CURVE
TSP(IS) =+25°C; DEVICE TYPES 2N2906AUA AND 2N2907AUA
NOTES:
1. This is the true inverse of the worst case thermal resistance value. All devices are capable of operating
at ≤ TJ specified on this curve. Any parallel line to this curve will intersect the appropriate power for the
desired maximum TJ allowed.
2. Derate design curve constrained by the maximum junction temperatures and power rating specified. (See
1.3 herein.)
3. Derate design curve chosen at TJ ≤ +150°C, where the maximum temperature of electrical test is
performed.
4. Derate design curve chosen at TJ ≤ +125°C, and +110°C to show power rating where most users want to
limit TJ in their application.
* FIGURE 9. Temperature-power derating for UA package (RθJSP(IS)), infinite sink 4-points.
26
MIL-PRF-19500/291Y
w/AMENDMENT 1
TEMPERATURE-POWER DERATING CURVE
TSP(AM) = 25°C; DEVICE TYPES 2N2906AUA AND 2N2907AUA
NOTES:
1. This is the true inverse of the worst case thermal resistance value. All devices are capable of operating
at ≤ TJ specified on this curve. Any parallel line to this curve will intersect the appropriate power for the
desired maximum TJ allowed.
2. Derate design curve constrained by the maximum junction temperatures and power rating specified. (See
1.3 herein.)
3. Derate design curve chosen at TJ ≤ +150°C, where the maximum temperature of electrical test is
performed.
4. Derate design curve chosen at TJ ≤ +125°C, and +110°C to show power rating where most users want to
limit TJ in their application.
* FIGURE 10. Temperature-power derating for UA package (RθJSP(AM)) 4-point solder pad (adhesive mount to PCB).
27
MIL-PRF-19500/291Y
w/AMENDMENT 1
TEMPERATURE-POWER DERATING CURVE
TSP(IS) = +25°C; DEVICE TYPES 2N2906AUB, UBC, UBN, AND UBCN,
2N2907AUB, UBC, UBN, AND UBCN
NOTES:
1. This is the true inverse of the worst case thermal resistance value. All devices are capable of operating at
≤ TJ specified on this curve. Any parallel line to this curve will intersect the appropriate power for the
desired maximum TJ allowed.
2. Derate design curve constrained by the maximum junction temperatures and power rating specified. (See
1.3 herein.)
3. Derate design curve chosen at TJ ≤ +150°C, where the maximum temperature of electrical test is
performed.
4. Derate design curve chosen at TJ ≤ +125°C, and +110°C to show power rating where most users want to
limit TJ in their application.
* FIGURE 11. Temperature-power derating for UB, UBC, UBN, or UBCN packages (RθJSP(IS)) infinite sink 3-point.
28
MIL-PRF-19500/291Y
w/AMENDMENT 1
MAXIMUM THERMAL IMPEDANCE
DEVICE TYPES 2N2906A, 2N2906AL, 2N2907A, AND 2N2907AL;
TO-18 PACKAGE WITH .125" LEAD MOUNT TO PCB
1000
9
8
7
6
5
4
3
2
THETA (°C/W)
100
9
8
7
6
5
4
3
2
10
9
8
7
6
5
4
3
2
1
0.000001
2
3 4 5 6 7 89
0.00001
2
3 4 5 6 7 89
0.0001
2
3 4 5 6 7 89
2
3 4 5 6 78 9
0.001
0.01
2
3 4 5 6 78 9
0.1
2
3 4 5 6 789
1
2
3 4 5 6 7 89
10
TIME (s)
* FIGURE 12. Thermal impedance graph (RθJA) for devices in a TO-206AA package.
29
2
3 4 5 6 7 89
100
MIL-PRF-19500/291Y
w/AMENDMENT 1
MAXIMUM THERMAL IMPEDANCE
DEVICE TYPES 2N2906A, 2N2906AL, 2N2907A, AND 2N2907AL;
TO-18 PACKAGE WITH CASE BASE IN COPPER SINK
1000
9
8
7
6
5
4
3
2
THETA (°C/W)
100
9
8
7
6
5
4
3
2
10
9
8
7
6
5
4
3
2
1
0.000001
2
3 4 5 6 7 89
0.00001
2
3 4 5 6 7 89
0.0001
2
3 4 5 6 7 89
2
3 4 5 6 7 89
0.001
0.01
2
3 4 5 6 78 9
0.1
2
3 4 5 6 78 9
2
3 4 5 6 7 89
1
TIME (s)
* FIGURE 13. Thermal impedance graph (RθJC) for devices in TO-206AA package.
30
10
2
3 4 5 6 7 89
100
MIL-PRF-19500/291Y
w/AMENDMENT 1
MAXIMUM THERMAL IMPEDANCE
DEVICE TYPES 2N2906AUA AND 2N2907AUA;
UA PACKAGE 4 POINTS SOLDER PADS (INFINITE SINK MOUNT TO PCB)
1000
9
8
7
6
5
4
3
2
100
9
8
7
THETA (°C/W)
6
5
4
3
2
10
9
8
7
6
5
4
3
2
1
0.000001
2
3 4 5 6 7 89
0.00001
2
3 4 5 6 78 9
0.0001
2
3 4 5 6 7 89
0.001
2
3 4 5 6 7 89
0.01
2
3 4 5 6 7 89
0.1
2
3 4 5 6 7 89
1
TIME (s)
* FIGURE 14. Thermal impedance graph (RθJSP(IS)) for devices in a UA package.
31
2
3 4 5 6 78 9
10
MIL-PRF-19500/291Y
w/AMENDMENT 1
MAXIMUM THERMAL IMPEDANCE
DEVICE TYPES 2N2906AUA AND 2N2907AUA;
UA 4 POINTS SOLDER PADS (ADHESIVE MOUNT TO PCB)
100
9
8
7
6
5
4
3
THETA (°C/W)
2
10
9
8
7
6
5
4
3
2
1
0.000001
2
3 4 5 6 7 89
0.00001
2
3 4 5 6 7 89
0.0001
2
3 4 5 6 78 9
0.001
2
3 4 5 6 7 89
0.01
2
3 4 5 6 78 9
0.1
TIME (s)
* FIGURE 15. Thermal impedance graph (RθJSP(AM)) for devices in a UA package.
32
2
3 4 5 6 7 89
1
MIL-PRF-19500/291Y
w/AMENDMENT 1
MAXIMUM THERMAL IMPEDANCE
DEVICE TYPES 2N2906AUB, 2N2906AUBC, 2N2907AUB AND 2N2907AUBC
UB AND UBC WITH 3 POINTS SOLDER PADS (INFINITE SINK MOUNT) TO PCB
1000
9
8
7
6
5
4
3
2
100
9
THETA (°C/W)
8
7
6
5
4
3
2
10
8
9
7
6
5
4
3
2
1
0.000001
2
3 4 5 6 7 89
0.00001
2
3 4 5 6 789
0 .0001
2
3 4 5 6 78 9
0.001
2
3 4 5 6 7 89
0.01
2
3 4 5 6 7 89
0.1
2
3 4 5 6 7 89
1
2
3 4 5 6 78 9
TIME (s)
* FIGURE 16. Thermal impedance graph (RθJSP(IS)) for devices in a UB, UBC, UBN, and UBCN package).
33
10
MIL-PRF-19500/291Y
w/AMENDMENT 1
VCC = –30 V dc
200 Ω
PULSE WIDTH
200 ±10 ns
INPUT
WAVEFORM
SEE NOTE 1
0 V
10%
50%
PULSE
IN
1 kΩ
50%
-16 V
50 Ω
tON
OUTPUT
WAVEFORM
OUTPUT
SAMPLING
OSCILLOSCOPE
SEE NOTE 2
90%
SCOPE
NOTES:
1. The rise time (tr) of the applied pulse shall be ≤ 2.0 ns, duty cycle ≤ 2 percent and the generator
source impedance shall be 50 ohms.
2. Sampling oscilloscope: Zin ≥ 100 K ohms, Cin ≤ 12 pF, rise time ≤ 5 ns.
* FIGURE 17. Saturated turn-on switching time test circuit.
VCC = –30 V dc
10 µs ≤ PW ≤ 100 µs
+13.7 V
INPUT
WAVEFORM
SEE NOTE 1
–16.3 V
200 Ω
tf ≤ 5 ns
10%
50%
PULSE
IN
90%
1 kΩ
20 kΩ
toff
OUTPUT
WAVEFORM
1N916
OR
EQUIV
10%
SCOPE
50 Ω
OUTPUT SAMPLING
OSCILLOSCOPE
SEE NOTE 3
OUTPUT SAMPLING
OSCILLOSCOPE
SEE NOTE 2
+3 V dc
NOTES:
1. The rise time (tr) of the applied pulse shall be ≤ 2.0 ns, duty cycle ≤ 2 percent and the generator
source impedance shall be 50 ohms.
2. Sampling oscilloscope: Zin ≥ 100 K ohms, Cin ≤ 12 pF, rise time ≤ 5 ns.
3. Alternate test point for high impedance attenuating probe.
* FIGURE 18. Saturated turn-off switching time test circuit.
34
MIL-PRF-19500/291Y
w/AMENDMENT 1
5. PACKAGING
5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or order
(see 6.2). When packaging of materiel is to be performed by DoD or in-house contractor personnel, these personnel
need to contact the responsible packaging activity to ascertain packaging requirements. Packaging requirements are
maintained by the Inventory Control Point's packaging activities within the Military Service or Defense Agency, or
within the Military Service’s system commands. Packaging data retrieval is available from the managing Military
Department's or Defense Agency's automated packaging files, CD-ROM products, or by contacting the responsible
packaging activity.
6. NOTES
(This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.
The notes specified in MIL-PRF-19500 are applicable to this specification.)
6.1 Intended use. Semiconductors conforming to this specification are intended for original equipment design
applications and logistic support of existing equipment.
6.2 Acquisition requirements. Acquisition documents should specify the following:
a.
Title, number, and date of this specification.
b.
Packaging requirements (see 5.1).
c.
Lead finish (see 3.4.1).
d.
The complete PIN, see 1.5 and 6.4.
e.
For acquisition of RHA designed devices, table II, subgroup 1 testing of group D is optional. If table II,
subgroup 1 testing is desired, it must be specified in the contract.
6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which are,
at the time of award of contract, qualified for inclusion in Qualified Manufacturers List (QML 19500) whether or not
such products have actually been so listed by that date. The attention of the contractors is called to these
requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal
Government tested for qualification in order that they may be eligible to be awarded contracts or orders for the
products covered by this specification. Information pertaining to qualification of products may be obtained from
DLA Land and Maritime, ATTN: VQE, P.O. Box 3990, Columbus, OH 43218-3990 or e-mail vqe.chief@dla.mil. An
online listing of products qualified to this specification may be found in the Qualified Products Database (QPD) at
https://qpldocs.dla.mil.
6.4 PIN construction examples. The PINs for encapsulated and unencapsulated devices and are constructed
using the following forms.
6.4.1 Non-RHA encapsulated devices The PINs for encapsulated devices are constructed using the following
form.
JANTXV
2N
2906
A
JAN certification mark and quality level (see 1.5.1.1)
First number and first letter symbols (see 1.5.3.1)
Second number symbols (see 1.5.3.2)
Suffix symbols for modified device, package designator
and metallurgical bond (see 1.5.4)
35
MIL-PRF-19500/291Y
w/AMENDMENT 1
6.4.2 RHA encapsulated devices The PINs for RHA encapsulated devices are constructed using the following
form.
JANS
M
2N
2906
AUB
JAN certification mark and quality level (see 1.5.1.1)
RHA designator (see 1.5.2)
First number and first letter symbols (see 1.5.3.1)
Second number symbols (see 1.5.3.2)
Suffix symbol (see 1.5.4)
6.4.3 Unencapsulated devices. The PINs for un-encapsulated devices are constructed using the following form.
JANHC
B
M
2N
2906A
JAN certification mark and quality level (see 1.5.1.2)
Die identifier for unencapsulated devices (see 1.5.6)
RHA designator (see 1.5.2)
First number and first letter symbols (see 1.5.3.1)
Second number symbols (see 1.5.3.2)
6.5 List of PINs.
6.5.1 PINs for encapsulated devices. The following is a list of possible PINs for encapsulated devices available on
this specification sheet.
JAN2N2906A
JAN2N2906AL
JAN2N2907A
JAN2N2907AL
JAN2N2906AUA
JAN2N2907AUA
JAN2N2906AUB
JAN2N2906AUBC
JAN2N2907AUB
JAN2N2907AUBC
JAN2N2906AUBN
JAN2N2906AUBCN
JAN2N2907AUBN
JAN2N2907AUBCN
PINs for type 2N2906A and 2N2907A (1)
JANTX2N2906A
JANTXV#2N2906A
JANTX2N2906AL
JANTXV#2N2906AL
JANTX2N2907A
JANTXV#2N2907A
JANTX2N2907AL
JANTXV#2N2907AL
JANTX2N2906AUA
JANTXV#2N2906AUA
JANTX2N2907AUA
JANTXV#2N2907AUA
JANTX2N2906AUB
JANTXV#2N2906AUB
JANTX2N2906AUBC
JANTXV#2N2906AUBC
JANTX2N2907AUB
JANTXV#2N2907AUB
JANTX2N2907AUBC
JANTXV#2N2907AUBC
JANTX2N2906AUBN
JANTXV#2N2906AUBN
JANTX2N2906AUBCN JANTXV#2N2906AUBCN
JANTX2N2907AUBN
JANTXV#2N2907AUBN
JANTX2N2907AUBCN JANTXV#2N2907AUBCN
JANS#2N2906A
JANS#2N2906AL
JANS#2N2907A
JANS#2N2907AL
JANS#2N2906AUA
JANS#2N2907AUA
JANS#2N2906AUB
JANS#2N2906AUBC
JANS#2N2907AUB
JANS#2N2907AUBC
JANS#2N2906AUBN
JANS#2N2906AUBCN
JANS#2N2907AUBN
JANS#2N2907AUBCN
(1) The number sign (#) represent one of eight RHA designators available (M, D, P, L, R, F, G, or H).
The PIN is also available without a RHA designator.
36
MIL-PRF-19500/291Y
w/AMENDMENT 1
6.5.2 List of PINs for unencapsulated devices. The following is a list of possible PINs available on this
specification sheet.
PINs for type 2N2906A and 2N2907A (1)
JANHCB#2N2906A
JANHCD#2N2906A
JANKCB#2N2907A
JANKCD#2N2907A
(1) The number sign (#) represent one of eight RHA designators
available (M, D, P, L, R, F, G, or H). The PIN is also available
without a RHA designator.
* 6.5.3 Suppliers and PINs for JANHC and JANKC die. The qualified JANHC and JANKC suppliers with the
applicable letter version (example JANHCB2N2907A) will be identified on the QML.
Die ordering information (1) (2)
Manufacturer
PIN
43611
34156
9N185
2N2906A
JANHCB2N2906A
JANHCD2N2906A
JANHCE2N2906A
2N2907A
JANHCB2N2907A
JANHCD2N2907A
JANHCE2N2907A
(1) For JANKC level, replace JANHC with JANKC.
(2) JANHCA, JANKCA, JANHCC, and JANKCC versions are obsolete.
6.6 Supersession information.
6.6.1 Superseded PINs. The following supersession data applies to PINs associated with this document:
Superseding PIN as
specified within
MIL-S-19500/291E,
dated 28 July 1994
Superseded PIN as
specified within
MIL-S-19500/291D,
AMENDMENT 3, dated
5 March 1993
2N2906A
2N2906
2N2907A
2N2907
Superseding PIN as
specified within
MIL-S-19500/314A(USAF),
AMENDMENT 1, dated
3 March 1966
2N2907A
6.6.2 Commerical PINs. Devices covered by this specification supersede the manufacturers' and users' PIN. The
term PIN is equivalent to the term part number which was previously used in this specification. This information in no
way implies that manufacturers' PIN's are suitable as a substitute for the military PIN.
6.7 Request for new types and configurations. Requests for new device types or configurations for inclusions in
this specification sheet should be submitted to: DLA Land and Maritime, ATTN: VAC, Post Office Box 3990,
Columbus, OH 43218-3990 or by electronic mail at Semiconductor@dla.mil or by facsimile (614) 693-1642 or
DSN 850-6939.
37
MIL-PRF-19500/291Y
w/AMENDMENT 1
* 6.8 Amendment notations. The margins of this specification are marked with asterisks to indicate modifications
generated by this amendment. This was done as a convenience only and the Government assumes no liability
whatsoever for any inaccuracies in these notations. Bidders and contractors are cautioned to evaluate the
requirements of this document based on the entire content irrespective of the marginal notations and relationship to
the last previous issue.
Custodians:
Army - CR
Navy - EC
Air Force - 85
NASA - NA
DLA - CC
Preparing activity:
DLA - CC
(Project 5961-2019-069)
Review activities:
Army - AR, MI, SM
Navy - AS, MC
Air Force - 19
NOTE: The activities listed above were interested in this document as of the date of this document. Since
organizations and responsibilities can change, you should verify the currency of the information above using the
ASSIST Online database at https://assist.dla.mil.
38
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