JANTX2N3498

2N3498 thru 2N3501 Qualified Levels: JAN, JANTX, JANTXV and JANS NPN SILICON TRANSISTOR Available on commercial versions Qualified per MIL-PRF-19500/366 DESCRIPTION This family of 2N3498 thru 2N3501 epitaxial planar transistors are military qualified up to a JANS level for high-reliability applications. These devices are also available in TO-5 and low profile U4 packaging. Microsemi also offers numerous other transistor products to meet higher and lower power ratings with various switching speed requirements in both throughhole and surface-mount packages. Important: For the latest information, visit our website http://www.microsemi.com. FEATURES • JEDEC registered 2N3498 through 2N3501 series. • JAN, JANTX, JANTXV, and JANS qualifications are available per MIL-PRF-19500/366. TO-39 (TO-205AD) Package (See part nomenclature for all available options.) • RoHS compliant versions available (commercial grade only). Also available in: TO-5 package APPLICATIONS / BENEFITS • • General purpose transistors for medium power applications requiring high frequency switching and low package profile. Military and other high-reliability applications. (long-leaded) 2N3498L – 2N3501L U4 package (surface mount) 2N3498U4 – 2N3501U4 MAXIMUM RATINGS Symbol 2N3498 2N3499 2N3500 2N3501 Unit Collector-Emitter Voltage VCEO 100 150 V Collector-Base Voltage VCBO 100 150 V Emitter-Base Voltage VEBO 6.0 6.0 V IC 500 Parameters / Test Conditions Collector Current 300 mA Thermal Resistance Junction-to-Ambient RӨJA 175 o C/W Thermal Resistance Junction-to-Case RӨJC 30 o C/W PT 1.0 5.0 W TJ, Tstg -65 to +200 °C Total Power Dissipation (1) @ TA = +25 °C (2) @ TC = +25 °C Operating & Storage Junction Temperature Range Notes: 1. See figure 1. 2. See figure 2. MSC – Lawrence 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 or (978) 620-2600 Fax: (978) 689-0803 MSC – Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: www.microsemi.com T4-LDS-0276, Rev. 1 (121221) ©2012 Microsemi Corporation Page 1 of 7 2N3498 thru 2N3501 MECHANICAL and PACKAGING • • • • • CASE: Hermetically sealed, kovar base, nickel cap. TERMINALS: Leads are kovar, nickel plated, and finish is solder dip (Sn63/Pb37). Can be RoHS compliant with pure matte-tin (commercial grade only). MARKING: Part number, date code, manufacturer’s ID. WEIGHT: Approximately 1.064 grams. See Package Dimensions on last page. PART NOMENCLATURE JAN 2N3498 (e3) Reliability Level JAN = JAN Level JANTX = JANTX Level JANTXV = JANTXV Level JANS = JANS level Blank = Commercial RoHS Compliance e3 = RoHS compliant (available on commercial grade only) Blank = non-RoHS compliant JEDEC type number (see Electrical Characteristics table) Symbol Cobo ICEO ICEX IEBO hFE VCEO VCBO VEBO SYMBOLS & DEFINITIONS Definition Common-base open-circuit output capacitance Collector cutoff current, base open Collector cutoff current, circuit between base and emitter Emitter cutoff current, collector open Common-emitter static forward current transfer ratio Collector-emitter voltage, base open Collector-emitter voltage, emitter open Emitter-base voltage, collector open T4-LDS-0276, Rev. 1 (121221) ©2012 Microsemi Corporation Page 2 of 7 2N3498 thru 2N3501 ELECTRICAL CHARACTERISTICS @ TA = +25 °C, unless otherwise noted Characteristic Symbol Min. V(BR)CEO 100 150 Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 10 mA, pulsed 2N3498, 2N3499 2N3500, 2N3501 Collector-Base Cutoff Current VCB = 50 V VCB = 75 V VCB = 100 V VCB = 150 V Emitter-Base Cutoff Current VEB = 4.0 V VEB = 6.0 V 2N3498, 2N3500, 2N3498, 2N3500, 2N3499 2N3501 2N3499 2N3501 V ICBO 50 50 10 10 nA nA µA µA IEBO 25 10 nA µA ON CHARACTERISTICS (1) Forward-Current Transfer Ratio IC = 0.1 mA, VCE = 10 V 2N3498, 2N3499, 2N3498, 2N3499, 2N3498, 2N3499, 2N3498, 2N3499, IC = 1.0 mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 150 mA, VCE = 10 V IC = 300 mA, VCE = 10 V IC = 500 mA, VCE = 10 V 2N3500 2N3501 2N3500 2N3501 2N3500 2N3501 2N3500 2N3501 2N3500 2N3501 2N3498 2N3499 hFE 20 35 25 50 35 75 40 100 15 20 15 20 120 300 Collector-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA IC = 300 mA, IB = 30 mA IC = 150 mA, IB = 15 mA All Types 2N3498, 2N3499 2N3500, 2N3501 VCE(sat) 0.2 0.6 0.4 V Base-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA IC = 300 mA, IB = 30 mA IC = 150 mA, IB = 15 mA All Types 2N3498, 2N3499 2N3500, 2N3501 VBE(sat) 0.8 1.4 1.2 V DYNAMIC CHARACTERISTICS Forward Current Transfer Ratio, Magnitude IC = 20 mA, VCE = 20 V, f = 100 MHz Output Capacitance VCB = 10 V, IE = 0, 100 kHz < f < 1.0 MHz |hfe| 2N3498, 2N3499 2N3500, 2N3501 Input Capacitance VEB = 0.5 V, IC = 0, 100 kHz < f < 1.0 MHz 1.5 8.0 Cobo 10 8.0 pF Cibo 80 pF (1) Pulse Test: pulse width = 300 µs, duty cycle < 2.0%. T4-LDS-0276, Rev. 1 (121221) ©2012 Microsemi Corporation Page 3 of 7 2N3498 thru 2N3501 ELECTRICAL CHARACTERISTICS @ TA = +25 °C, unless otherwise noted SWITCHING CHARACTERISTICS Characteristic Turn-On Time VEB = 5 V; IC = 150 mA; IB1 = 15 mA Turn-Off Time IC = 150 mA; IB1 = IB2 = -15 mA Symbol Min. Max. Unit t on 115 ns t off 1150 ns SAFE OPERATING AREA (See SOA figure and reference MIL-STD-750 method 3053) IC Collector Current (Milliamperes) DC Tests TC = +25 oC, tr > 10 ns; 1 Cycle, t = 1.0 s Test 1 2N3498, 2N3499 VCE = 10 V, IC = 500 mA 2N3500, 2N3501 VCE = 16.67 V, IC = 300 mA Test 2 VCE = 50 V, IC = 100 mA All Types Test 3 VCE = 80 V, IC = 40 mA All Types Clamped Switching TA = +25 oC Test 1 IB = 85 mA, IC = 500 mA 2N3498, 2N3499 IB = 50 mA, IC = 300 mA 2N3500, 2N3501 VCE Collector to Emitter Voltage (Volts) Maximum Safe Operating Area T4-LDS-0276, Rev. 1 (121221) ©2012 Microsemi Corporation Page 4 of 7 2N3498 thru 2N3501 DC Operation Maximum Rating (W) GRAPHS TA (°C) (Ambient) DC Operation Maximum Rating (W) FIGURE 1 Derating for all devices (RθJA) Tc (°C) (Case) FIGURE 2 Derating for all devices (RθJC) T4-LDS-0276, Rev. 1 (121221) ©2012 Microsemi Corporation Page 5 of 7 2N3498 thru 2N3501 Theta (°C/W) GRAPHS Time (s) FIGURE 3 Theta (°C/W) Thermal Impedance Graph (RθJA) Time (s) FIGURE 4 Thermal Impedance Graph (RθJC) T4-LDS-0276, Rev. 1 (121221) ©2012 Microsemi Corporation Page 6 of 7 2N3498 thru 2N3501 PACKAGE DIMENSIONS Symbol Inch Min Dimensions Millimeters Max Min Max Note CD 0.305 0.335 7.75 8.51 CH 0.240 0.260 6.10 6.60 HD LC 0.335 0.370 0.200 TP 8.51 9.40 5.08 TP 6 LD 0.016 0.41 0.53 7 0.48 7, 13 1.27 13 LL LU 0.021 See notes 7, 12 and 13 0.016 L1 0.019 0.41 0.050 L2 0.250 6.35 13 P 0.100 2.54 5 Q 0.050 1.27 4 TL 0.029 0.045 0.74 1.14 3 TW 0.028 0.034 0.71 0.86 10, 11 0.25 11 r α 0.010 45° TP 45° TP 6 NOTES: 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. Dimension are in inches. Millimeters are given for general information only. Symbol TL is measured from HD maximum. Details of outline in this zone are optional. Symbol CD shall not vary more than .010 (0.25 mm) in zone P. This zone is controlled for automatic handling. Leads at gauge plane .054 inch (1.37 mm) +.001 inch (0.03 mm) -.000 inch (0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of true position (TP) relative to tab. Device may be measured by direct methods or by gauge. Symbol LD applies between L1 and L2. Dimension LD applies between L2 and LL minimum. Lead diameter shall not exceed .042 inch (1.07 mm) within L1 and beyond LL minimum. Lead designation, shall be as follows: 1 - emitter, 2 - base, 3 - collector. Lead number three is electrically connected to case. Beyond r maximum, TW shall be held for a minimum length of .011 inch (0.28 mm). Symbol r applied to both inside corners of tab. For transistor types 2N3498, 2N3499, 2N3500, and 2N3501, LL = .50 inch (12.7 mm) minimum and .750 inch (19.1 mm) maximum. For transistor types 2N3498L, 2N3499L, 2N3500L, and 2N3501L, LL = 1.50 inches (38.1 mm) minimum and 1.750 inches (44.5 mm) maximum. All three leads. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology. T4-LDS-0276, Rev. 1 (121221) ©2012 Microsemi Corporation Page 7 of 7