2N3700UB
Available on
commercial
versions
Low Power NPN Silicon Transistor
Qualified per MIL-PRF-19500/391
Qualified Levels:
JAN, JANTX,
JANTXV, and JANS
DESCRIPTION
This 2N3700UB NPN ceramic surface mount device is military qualified for high-reliability
applications.
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
•
Surface mount equivalent to JEDEC registered 2N3700 number.
•
•
JAN, JANTX, JANTXV and JANS qualifications are available per MIL-PRF-19500/391.
Rad hard levels are also available per MIL-PRF-19500/391. (See RHA datasheet for
JANS_2N3700UB.)
RoHS compliant versions available (commercial grade only).
•
UB Package
Also available in:
TO-18 (TO-206AA)
(leaded)
2N3700
APPLICATIONS / BENEFITS
•
•
•
•
Ceramic UB surface mount package.
Lightweight.
Low power.
Military and other high-reliability applications.
TO-39 (TO-205AD)
(leaded)
2N3019
TO-5 package
(leaded)
2N3019S
TO-46 (TO-206AB)
(leaded)
2N3057A
o
MAXIMUM RATINGS @ T A = +25 C unless otherwise noted.
Parameters/Test Conditions
Junction and Storage Temperature
Thermal Impedance Junction-to-Ambient
Thermal Impedance Junction-to-Solder Pad
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
o (1)
Total Power Dissipation:
@ T A = +25 C
Notes:
Symbol
T J and T STG
R ӨJA
R ӨJSP
V CEO
V CBO
V EBO
IC
PD
Value
-65 to +200
325
90
80
140
7.0
1.0
0.5
1. Derate linearly 6.6 mW/°C for T A ≥ +25 °C.
Unit
o
C
o
C/W
o
C/W
V
V
V
A
W
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
T4-LDS-0185-3, Rev. 1 (4/24/13)
©2013 Microsemi Corporation
Page 1 of 7
2N3700UB
MECHANICAL and PACKAGING
•
•
•
•
•
•
CASE: Ceramic.
TERMINALS: Gold plating over nickel under plate (hot solder dip optional for military).
MARKING: Part number, date code, manufacturer’s ID.
TAPE & REEL option: Standard per EIA-481D. Consult factory for quantities.
WEIGHT: < 0.04 grams.
See Package Dimensions on last page.
PART NOMENCLATURE
JAN
2N3700
UB
(e4)
Reliability Level
JAN = JAN level
JANTX = JANTX level
JANTXV = JANTXV level
JANS = JANS level
Blank = Commercial
RoHS Compliance
e4 = RoHS compliant (gold
plating without solder dip option)
Blank = non-RoHS compliant
Surface Mount Package
JEDEC type number
(see Electrical Characteristics
table)
Symbol
f
IB
IE
TA
TC
T SP
V CB
V CE
V EB
SYMBOLS & DEFINITIONS
Definition
Frequency
Base current (dc)
Emitter current (dc)
Ambient temperature
Case temperature
Solder pad temperature
Collector to base voltage (dc)
Collector to emitter voltage (dc)
Emitter to base voltage (dc)
T4-LDS-0185-3, Rev. 1 (4/24/13)
©2013 Microsemi Corporation
Page 2 of 7
2N3700UB
ELECTRICAL CHARACTERISTICS @ T A = +25 °C, unless otherwise noted
Parameters / Test Conditions
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I C = 30 mA
Collector-Base Cutoff Current
V CB = 140 V
Emitter-Base Cutoff Current
V EB = 7 V
Collector-Emitter Cutoff Current
V CE = 90 V
Emitter-Base Cutoff Current
V EB = 5.0 V
ON CHARACTERISTICS
Forward-Current Transfer Ratio
I C = 150 mA, V CE = 10 V
I C = 0.1 mA, V CE = 10 V
I C = 10 mA, V CE = 10 V
I C = 500 mA, V CE = 10 V
I C = 1.0 A, V CE = 10 V
Collector-Emitter Saturation Voltage
I C = 150 mA, I B = 15 mA
I C = 500 mA, I B = 50 mA
Base-Emitter Saturation Voltage
I C = 150 mA, I B = 15 mA
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
V (BR)CEO
80
Max.
Unit
V
I CBO
10
µA
I EBO1
10
µA
I CES
10
nA
I EBO2
10
nA
h FE
100
50
90
50
15
300
300
300
V CE(sat)
0.2
0.5
V
V BE(sat)
1.1
V
Unit
Symbol
Min.
Max.
Small-Signal Short-Circuit Forward Current Transfer Ratio
I C = 1.0 mA, V CE = 5.0 V, f = 1.0 kHz
h fe
80
400
Magnitude of Small-Signal Short-Circuit Forward Current
Transfer Ratio
I C = 50 mA, V CE = 10 V, f = 20 MHz
|h fe |
5.0
20
Output Capacitance
V CB = 10 V, I E = 0, 100 kHz ≤ f ≤ 1.0 MHz
C obo
12
pF
Input Capacitance
V EB = 0.5 V, I C = 0, 100 kHz ≤ f ≤ 1.0 MHz
C ibo
60
pF
T4-LDS-0185-3, Rev. 1 (4/24/13)
©2013 Microsemi Corporation
Page 3 of 7
2N3700UB
ELECTRICAL CHARACTERISTICS @ T A = +25 °C unless otherwise noted (continued)
SAFE OPERATION AREA (See SOA graph below and MIL-STD-750, method 3053)
DC Tests
T C = 25 °C, 1 cycle, t = 10 ms
Test 1
2N3700UB
V CE = 10 V
I C = 180 mA
Test 2
2N3700UB
V CE = 40 V
I C = 45 mA
Test 3
2N3700UB
V CE = 80 V
I C = 22.5 mA
IC – COLLECTOR CURRENT - A
(1) Pulse Test: Pulse Width = 300 µs, duty cycle ≤ 2.0%.
V CE – COLLECTOR – EMITTER VOLTAGE – V
Maximum Safe Operating Area @ T A = 25 ºC
See additional SOA graph on next page.
T4-LDS-0185-3, Rev. 1 (4/24/13)
©2013 Microsemi Corporation
Page 4 of 7
2N3700UB
IC – COLLECTOR CURRENT - A
ELECTRICAL CHARACTERISTICS @ T A = +25 °C unless otherwise noted (continued)
V CE – COLLECTOR – EMITTER VOLTAGE – V
Maximum Safe Operating Area (T SP = 25°C)
T4-LDS-0185-3, Rev. 1 (4/24/13)
©2013 Microsemi Corporation
Page 5 of 7
2N3700UB
Maximum DC Operation Rating (W)
GRAPHS
o
T A ( C) Ambient
Maximum DC Operation Rating (W)
FIGURE 1
Temperature-Power Derating (R ӨJA )
o
T SP ( C) Solder Pad
FIGURE 2
Temperature-Power Derating (R ӨJSP )
T4-LDS-0185-3, Rev. 1 (4/24/13)
©2013 Microsemi Corporation
Page 6 of 7
2N3700UB
PACKAGE DIMENSIONS
Lid
Symbol
BH
BL
BW
CL
CW
LL 1
LL 2
Dimensions
Millimeters
Max
Min
Max
0.056
1.17
1.42
0.128
2.92
3.25
0.108
2.16
2.74
0.128
3.25
0.108
2.74
0.038
0.56
0.96
0.035
0.43
0.89
Inch
Min
0.046
0.115
0.085
0.022
0.017
Note
Symbol
LS 1
LS 2
LW
r
r1
r2
Dimensions
Millimeters
Max
Min
Max
0.039
0.89
0.99
0.079
1.80
2.01
0.024
0.41
0.61
0.008
0.20
0.012
0.31
.022
0.56
Inch
Min
0.035
0.071
0.016
-
Note
NOTES:
1.
2.
3.
4.
5.
Dimensions are in inches.
Millimeters are given for general information only.
Hatched areas on package denote metallized areas.
Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Pad 4 = Shielding connected to the lid.
In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.
T4-LDS-0185-3, Rev. 1 (4/24/13)
©2013 Microsemi Corporation
Page 7 of 7
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