0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
JANTX2N3700UB

JANTX2N3700UB

  • 厂商:

    ACTEL(微芯科技)

  • 封装:

    SMD3

  • 描述:

    TRANS NPN 80V 1A

  • 数据手册
  • 价格&库存
JANTX2N3700UB 数据手册
2N3700UB Available on commercial versions Low Power NPN Silicon Transistor Qualified per MIL-PRF-19500/391 Qualified Levels: JAN, JANTX, JANTXV, and JANS DESCRIPTION This 2N3700UB NPN ceramic surface mount device is military qualified for high-reliability applications. Important: For the latest information, visit our website http://www.microsemi.com. FEATURES • Surface mount equivalent to JEDEC registered 2N3700 number. • • JAN, JANTX, JANTXV and JANS qualifications are available per MIL-PRF-19500/391. Rad hard levels are also available per MIL-PRF-19500/391. (See RHA datasheet for JANS_2N3700UB.) RoHS compliant versions available (commercial grade only). • UB Package Also available in: TO-18 (TO-206AA) (leaded) 2N3700 APPLICATIONS / BENEFITS • • • • Ceramic UB surface mount package. Lightweight. Low power. Military and other high-reliability applications. TO-39 (TO-205AD) (leaded) 2N3019 TO-5 package (leaded) 2N3019S TO-46 (TO-206AB) (leaded) 2N3057A o MAXIMUM RATINGS @ T A = +25 C unless otherwise noted. Parameters/Test Conditions Junction and Storage Temperature Thermal Impedance Junction-to-Ambient Thermal Impedance Junction-to-Solder Pad Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current o (1) Total Power Dissipation: @ T A = +25 C Notes: Symbol T J and T STG R ӨJA R ӨJSP V CEO V CBO V EBO IC PD Value -65 to +200 325 90 80 140 7.0 1.0 0.5 1. Derate linearly 6.6 mW/°C for T A ≥ +25 °C. Unit o C o C/W o C/W V V V A W MSC – Lawrence 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 or (978) 620-2600 Fax: (978) 689-0803 MSC – Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: www.microsemi.com T4-LDS-0185-3, Rev. 1 (4/24/13) ©2013 Microsemi Corporation Page 1 of 7 2N3700UB MECHANICAL and PACKAGING • • • • • • CASE: Ceramic. TERMINALS: Gold plating over nickel under plate (hot solder dip optional for military). MARKING: Part number, date code, manufacturer’s ID. TAPE & REEL option: Standard per EIA-481D. Consult factory for quantities. WEIGHT: < 0.04 grams. See Package Dimensions on last page. PART NOMENCLATURE JAN 2N3700 UB (e4) Reliability Level JAN = JAN level JANTX = JANTX level JANTXV = JANTXV level JANS = JANS level Blank = Commercial RoHS Compliance e4 = RoHS compliant (gold plating without solder dip option) Blank = non-RoHS compliant Surface Mount Package JEDEC type number (see Electrical Characteristics table) Symbol f IB IE TA TC T SP V CB V CE V EB SYMBOLS & DEFINITIONS Definition Frequency Base current (dc) Emitter current (dc) Ambient temperature Case temperature Solder pad temperature Collector to base voltage (dc) Collector to emitter voltage (dc) Emitter to base voltage (dc) T4-LDS-0185-3, Rev. 1 (4/24/13) ©2013 Microsemi Corporation Page 2 of 7 2N3700UB ELECTRICAL CHARACTERISTICS @ T A = +25 °C, unless otherwise noted Parameters / Test Conditions OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage I C = 30 mA Collector-Base Cutoff Current V CB = 140 V Emitter-Base Cutoff Current V EB = 7 V Collector-Emitter Cutoff Current V CE = 90 V Emitter-Base Cutoff Current V EB = 5.0 V ON CHARACTERISTICS Forward-Current Transfer Ratio I C = 150 mA, V CE = 10 V I C = 0.1 mA, V CE = 10 V I C = 10 mA, V CE = 10 V I C = 500 mA, V CE = 10 V I C = 1.0 A, V CE = 10 V Collector-Emitter Saturation Voltage I C = 150 mA, I B = 15 mA I C = 500 mA, I B = 50 mA Base-Emitter Saturation Voltage I C = 150 mA, I B = 15 mA DYNAMIC CHARACTERISTICS Parameters / Test Conditions Symbol Min. V (BR)CEO 80 Max. Unit V I CBO 10 µA I EBO1 10 µA I CES 10 nA I EBO2 10 nA h FE 100 50 90 50 15 300 300 300 V CE(sat) 0.2 0.5 V V BE(sat) 1.1 V Unit Symbol Min. Max. Small-Signal Short-Circuit Forward Current Transfer Ratio I C = 1.0 mA, V CE = 5.0 V, f = 1.0 kHz h fe 80 400 Magnitude of Small-Signal Short-Circuit Forward Current Transfer Ratio I C = 50 mA, V CE = 10 V, f = 20 MHz |h fe | 5.0 20 Output Capacitance V CB = 10 V, I E = 0, 100 kHz ≤ f ≤ 1.0 MHz C obo 12 pF Input Capacitance V EB = 0.5 V, I C = 0, 100 kHz ≤ f ≤ 1.0 MHz C ibo 60 pF T4-LDS-0185-3, Rev. 1 (4/24/13) ©2013 Microsemi Corporation Page 3 of 7 2N3700UB ELECTRICAL CHARACTERISTICS @ T A = +25 °C unless otherwise noted (continued) SAFE OPERATION AREA (See SOA graph below and MIL-STD-750, method 3053) DC Tests T C = 25 °C, 1 cycle, t = 10 ms Test 1 2N3700UB V CE = 10 V I C = 180 mA Test 2 2N3700UB V CE = 40 V I C = 45 mA Test 3 2N3700UB V CE = 80 V I C = 22.5 mA IC – COLLECTOR CURRENT - A (1) Pulse Test: Pulse Width = 300 µs, duty cycle ≤ 2.0%. V CE – COLLECTOR – EMITTER VOLTAGE – V Maximum Safe Operating Area @ T A = 25 ºC See additional SOA graph on next page. T4-LDS-0185-3, Rev. 1 (4/24/13) ©2013 Microsemi Corporation Page 4 of 7 2N3700UB IC – COLLECTOR CURRENT - A ELECTRICAL CHARACTERISTICS @ T A = +25 °C unless otherwise noted (continued) V CE – COLLECTOR – EMITTER VOLTAGE – V Maximum Safe Operating Area (T SP = 25°C) T4-LDS-0185-3, Rev. 1 (4/24/13) ©2013 Microsemi Corporation Page 5 of 7 2N3700UB Maximum DC Operation Rating (W) GRAPHS o T A ( C) Ambient Maximum DC Operation Rating (W) FIGURE 1 Temperature-Power Derating (R ӨJA ) o T SP ( C) Solder Pad FIGURE 2 Temperature-Power Derating (R ӨJSP ) T4-LDS-0185-3, Rev. 1 (4/24/13) ©2013 Microsemi Corporation Page 6 of 7 2N3700UB PACKAGE DIMENSIONS Lid Symbol BH BL BW CL CW LL 1 LL 2 Dimensions Millimeters Max Min Max 0.056 1.17 1.42 0.128 2.92 3.25 0.108 2.16 2.74 0.128 3.25 0.108 2.74 0.038 0.56 0.96 0.035 0.43 0.89 Inch Min 0.046 0.115 0.085 0.022 0.017 Note Symbol LS 1 LS 2 LW r r1 r2 Dimensions Millimeters Max Min Max 0.039 0.89 0.99 0.079 1.80 2.01 0.024 0.41 0.61 0.008 0.20 0.012 0.31 .022 0.56 Inch Min 0.035 0.071 0.016 - Note NOTES: 1. 2. 3. 4. 5. Dimensions are in inches. Millimeters are given for general information only. Hatched areas on package denote metallized areas. Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Pad 4 = Shielding connected to the lid. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology. T4-LDS-0185-3, Rev. 1 (4/24/13) ©2013 Microsemi Corporation Page 7 of 7
JANTX2N3700UB 价格&库存

很抱歉,暂时无法提供与“JANTX2N3700UB”相匹配的价格&库存,您可以联系我们找货

免费人工找货