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JANTXV2N3767

JANTXV2N3767

  • 厂商:

    ACTEL(微芯科技)

  • 封装:

    TO213AA

  • 描述:

    TRANS NPN 80V 4A

  • 数据手册
  • 价格&库存
JANTXV2N3767 数据手册
TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/518 Devices Qualified Level 2N3766 JAN JANTX JANTXV 2N3767 MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation @ TC = +250C (1) Operating & Storage Temperature Range Symbol 2N3766 2N3767 Units VCEO VCBO VEBO IB IC PT 60 80 80 100 Vdc Vdc Vdc Adc Adc W Top, Tstg 6.0 2.0 4.0 25 -65 to +200 0 C TO-66* (TO-213AA) THERMAL CHARACTERISTICS Characteristics Symbol Thermal Resistance, Junction-to-Case RθJC 1) Derate linearly 143 mW/0C between TC = +250C and TC = +2000C Max. 7.0 Unit 0 C/W *See Appendix A for Package Outline ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit 2N3766 2N3767 V(BR)CEO 60 80 2N3766 2N3767 ICEO 500 500 µAdc 2N3766 2N3767 ICEX 10 10 µAdc 2N3766 2N3767 ICBO 10 10 µAdc IEBO 500 OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 100 mAdc Collector-Emitter Cutoff Current VCE = 60 Vdc VCE = 80 Vdc Collector-Emitter Cutoff Current VCE = 80 Vdc, VBE = 1.5 Vdc VCE = 100 Vdc, VBE = 1.5 Vdc Collector-Base Cutoff Current VCB = 80 Vdc VCB = 100 Vdc Emitter-Base Cutoff Current VEB = 6.0 Vdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 Vdc µAdc 120101 Page 1 of 2 2N3766, 2N3767 JAN SERIES ELECTRICAL CHARACTERISTICS (con’t) Characteristics Symbol Min. Max. hFE 30 40 20 160 Unit ON CHARACTERISTICS (2) Forward-Current Transfer Ratio IC = 50 mAdc, VCE = 5.0 Vdc IC = 500 mAdc, VCE = 5.0 Vdc IC = 1.0 Adc, VCE = 10 Vdc Collector-Emitter Saturation Voltage IC = 1.0 Adc, IB = 0.1 Adc IC = 0.5 Adc, IB = 0.05 Adc Base-Emitter Voltage IC = 1.0 Adc, VCE = 10 Vdc VCE(sat) 2.5 1.0 Vdc VBE(on) 1.5 Vdc DYNAMIC CHARACTERISTICS Magnitude of Common Emitter Small-Signal Short-Circuit Forward Current Transfer Ratio IC = 500 mAdc, VCE = 10 Vdc, f = 10 MHz Output Capacitance VCB = 10 Vdc, IE = 0, 0.1 MHz ≤ f ≤ 1.0 MHz hfe 1.0 8.0 50 pF on 0.25 µs off 2.5 µs Cobo SWITCHING CHARACTERISTICS Turn-On Time VCC = 30 Vdc; IC = 0.5 Adc; IB = 0.05 Adc Turn-Off Time VCC = 30 Vdc; IC = 0.5 Adc; IB = IB = 0.05 Adc t t SAFE OPERATING AREA DC Tests TC = +250C, 1 Cycle, t = 1.0 s Test 1 VCE = 6.25 Vdc, IC = 4.0 Adc Test 2 VCE = 20 Vdc, IC = 1.25 Adc Test 3 VCE = 50 Vdc, IC = 150 mAdc 2N3766 VCE = 65 Vdc, IC = 150 mAdc 2N3767 (2) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%. 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 2 of 2
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