LM4041CYM3-ADJ-TR

LM4040/LM4041 Precision Micropower Shunt Voltage Reference Features General Description • • • • Small SOT-23 Package No Output Capacitor Required Tolerates Capacitive Loads Fixed Reverse-Breakdown Voltages of 1.225V, 2.500V, 4.096V, and 5.000V • Adjustable Reverse-Breakdown Version Ideal for space critical applications, the LM4040 and LM4041 precision voltage references are available in the subminiature SOT-23 surface-mount package. Applications The minimum operating current ranges from 60 μA for the LM4041-1.2 to 74 μA for the LM4040-5.0. LM4040 versions have a maximum operating current of 15 mA. LM4041 versions have a maximum operating current of 12 mA. • • • • • • • • Battery-Powered Equipment Data Acquisition Systems Instrumentation Process Control Energy Management Product Testing Automotive Electronics Precision Audio Components The LM4040 is available in fixed reverse-breakdown voltages of 2.500V, 4.096V, and 5.000V. The LM4041 is available with a fixed 1.225V or an adjustable reverse-breakdown voltage. The LM4040 and LM4041 have bandgap reference temperature drift curvature correction and low dynamic impedance, ensuring stable reverse-breakdown voltage accuracy over a wide range of operating temperatures and currents. Package Types LM4040/LM4041 (FIXED VERSION) 3-Pin SOT-23 LM4041 (ADJUSTABLE VERSION) 3-Pin SOT-23 NC - 3 3 1 2 1 2 + - FB +  2017-2018 Microchip Technology Inc. DS20005757B-page 1 LM4040/LM4041 Typical Application Diagrams LM4041 Adjustable Shunt Regulator Application VS LM4040/LM4041 Fixed Shunt Regulator Application VS RS VR LM4040 I Q + IL IL RS VO VO R1 LM4041 Adjustable IQ VO = 1.233 (R2/R1 + 1) R2 Functional Block Diagrams LM4040/LM4041 Fixed LM4041 Adjustable + + VREF FB DS20005757B-page 2  2017-2018 Microchip Technology Inc. LM4040/LM4041 1.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings † Reverse Current......................................................................................................................................................20 mA Forward Current ......................................................................................................................................................10 mA Maximum Output Voltage (LM4041-ADJ) ...................................................................................................................15V Power Dissipation (TA = +25°C; Note 1) ..............................................................................................................306 mW ESD Susceptibility (HBM; Note 2).............................................................................................................................. 2 kV ESD Susceptibility (MM; Note 2)...............................................................................................................................200V Operating Ratings ‡ Reverse Current (LM4040-2.5) .................................................................................................................60 µA to 15 mA Reverse Current (LM4040-4.1) .................................................................................................................68 µA to 15 mA Reverse Current (LM4040-5.0) .................................................................................................................74 µA to 15 mA Reverse Current (LM4041-1.2) .................................................................................................................60 µA to 12 mA Reverse Current (LM4041-ADJ) ...............................................................................................................60 µA to 12 mA Output Voltage Range (LM4041-ADJ) ......................................................................................................... 1.24V to 10V † Notice: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended periods may affect device reliability. ‡ Notice: The device is not guaranteed to function outside its operating ratings. Note 1: The maximum power dissipation must be derated at elevated temperatures and is dictated by TJMAX (maximum junction temperature), ƟJA (junction-to-ambient thermal resistance), and TA (ambient temperature). The maximum allowable power dissipation at any temperature is PDMAX = (TJMAX – TA)/ ƟJA or the number given in the Absolute Maximum Ratings, whichever is lower. For the LM4040 and LM4041, TJMAX = +125°C and the typical thermal resistance, when board-mounted, is +326°C/W for the SOT-23 package. 2: Devices are ESD sensitive. Handling precautions are recommended. Human body model, 1.5 kΩ in series with 100 pF. The machine model is a 200 pF capacitor discharged directly into each pin.  2017-2018 Microchip Technology Inc. DS20005757B-page 3 LM4040/LM4041 LM4040-2.5 ELECTRICAL CHARACTERISTICS (Note 1) TA = Operating Temperature Range, TA = TJ = –40°C to +85°C, unless noted. Parameters Sym. Min. Typ. Max. Units Conditions VR — 2.500 — V IR = 100 µA, TA = +25°C — — ±12 mV IR = 100 µA, TA = +25°C — — ±29 mV IR = 100 µA — 45 60 µA TA = +25°C — — 65 — ±20 — — ±15 ±100 — ±15 — — 0.3 0.8 — — 1.0 IRMIN ≤ IR ≤ 1 mA — 2.5 6.0 1 mA ≤ IR ≤ 15 mA, TA = +25°C LM4040C Reverse-Breakdown Voltage Reverse-Breakdown Voltage Tolerance (Note 2) Minimum Operating Current IRMIN Average Reverse-Breakdown Voltage Temperature Coefficient ∆VR/∆T Reverse-Breakdown Voltage Change with Operating Current Change ∆VR/∆IR — ppm/°C IR = 10 mA, TA = +25°C IR = 1 mA IR = 100 µA, TA = +25°C mV IRMIN ≤ IR ≤ 1 mA, TA = +25°C — — 8.0 Reverse Dynamic Impedance ZR — 0.3 0.9 Wideband Noise eN — 35 — ∆VR — 120 — ppm t = 1000 hrs., TA = +25°C ±0.1°C, IR = 100 µA VR — 2.500 — V IR = 100 µA, TA = +25°C — — ±25 mV IR = 100 µA, TA = +25°C — — ±49 mV IR = 100 µA — 45 65 µA TA = +25°C — — 70 — ±20 — — ±15 ±150 — ±15 — Reverse-Breakdown Voltage Long-Term Stability 1 mA ≤ IR ≤ 15 mA Ω IR = 1 mA, f = 120 Hz, IAC = 0.1 IR, TA = +25°C µVRMS IR = 100 µA, TA = +25°C, 10 Hz ≤ f ≤ 10 kHz LM4040D Reverse-Breakdown Voltage Reverse-Breakdown Voltage Tolerance (Note 2) Minimum Operating Current Average Reverse-Breakdown Voltage Temperature Coefficient Note 1: 2: IRMIN ∆VR/∆T — ppm/°C IR = 10 mA, TA = +25°C IR = 1 mA IR = 100 µA, TA = +25°C Specification for packaged product only. The boldface (overtemperature) limit for Reverse-Breakdown Voltage Tolerance is defined as the room temperature Reverse-Breakdown Voltage Tolerance ±[(∆VR/∆T)(65°C)(VR)]. ∆VR/∆T is the VR temperature coefficient, 65°C is the temperature range from –40°C to the reference point of 25°C, and VR is the reverse-breakdown voltage. The total overtemperature tolerance for the different grades follows: a. C-grade: ±1.15% = ±0.5% ±100 ppm/°C × 65°C b. D-grade: ±1.98% = ±1.0% ±150 ppm/°C × 65°C Example: The C-grade LM4040-2.5 has an overtemperature Reverse-Breakdown Voltage tolerance of ±2.5 × 1.15% = ±29 mV. DS20005757B-page 4  2017-2018 Microchip Technology Inc. LM4040/LM4041 LM4040-2.5 ELECTRICAL CHARACTERISTICS (Note 1) (CONTINUED) TA = Operating Temperature Range, TA = TJ = –40°C to +85°C, unless noted. Parameters Reverse-Breakdown Voltage Change with Operating Current Change Sym. Min. Typ. Max. Units ∆VR/∆IR — 0.3 1.0 mV — — 1.2 IRMIN ≤ IR ≤ 1 mA — 2.5 8.0 1 mA ≤ IR ≤ 15 mA, TA = +25°C — — 10.0 1 mA ≤ IR ≤ 15 mA Reverse Dynamic Impedance ZR — 0.3 1.1 Wideband Noise eN — 35 — ∆VR — 120 — Reverse-Breakdown Voltage Long-Term Stability Note 1: 2: Ω Conditions IRMIN ≤ IR ≤ 1 mA, TA = +25°C IR = 1 mA, f = 120 Hz, IAC = 0.1 IR, TA = +25°C µVRMS IR = 100 µA, 10 Hz ≤ f ≤ 10 kHz ppm t = 1000 hrs., TA = +25°C ±0.1°C, IR = 100 µA Specification for packaged product only. The boldface (overtemperature) limit for Reverse-Breakdown Voltage Tolerance is defined as the room temperature Reverse-Breakdown Voltage Tolerance ±[(∆VR/∆T)(65°C)(VR)]. ∆VR/∆T is the VR temperature coefficient, 65°C is the temperature range from –40°C to the reference point of 25°C, and VR is the reverse-breakdown voltage. The total overtemperature tolerance for the different grades follows: a. C-grade: ±1.15% = ±0.5% ±100 ppm/°C × 65°C b. D-grade: ±1.98% = ±1.0% ±150 ppm/°C × 65°C Example: The C-grade LM4040-2.5 has an overtemperature Reverse-Breakdown Voltage tolerance of ±2.5 × 1.15% = ±29 mV.  2017-2018 Microchip Technology Inc. DS20005757B-page 5 LM4040/LM4041 LM4040-4.1 ELECTRICAL CHARACTERISTICS (Note 1) TA = Operating Temperature Range, TA = TJ = –40°C to +85°C, unless noted. Parameters Sym. Min. Typ. Max. Units Conditions VR — 4.096 — V IR = 100 µA, TA = +25°C — — ±20 mV IR = 100 µA, TA = +25°C — — ±47 mV IR = 100 µA — 50 68 µA TA = +25°C — — 73 — ±30 — — ±20 ±100 — ±20 — — 0.5 0.9 — — 1.2 IRMIN ≤ IR ≤ 1 mA — 3.0 7.0 1 mA ≤ IR ≤ 15 mA, TA = +25°C LM4040C Reverse-Breakdown Voltage Reverse-Breakdown Voltage Tolerance (Note 2) Minimum Operating Current IRMIN Average Reverse-Breakdown Voltage Temperature Coefficient ∆VR/∆T Reverse-Breakdown Voltage Change with Operating Current Change ∆VR/∆IR — ppm/°C IR = 10 mA, TA = +25°C IR = 1 mA IR = 100 µA, TA = +25°C mV IRMIN ≤ IR ≤ 1 mA, TA = +25°C — — 10.0 Reverse Dynamic Impedance ZR — 0.5 1.0 Wideband Noise eN — 80 — ∆VR — 120 — ppm t = 1000 hrs., TA = +25°C ±0.1°C, IR = 100 µA VR — 4.096 — V IR = 100 µA, TA = +25°C — — ±41 mV IR = 100 µA, TA = +25°C — — ±81 mV IR = 100 µA — 50 73 µA TA = +25°C — — 78 — ±30 — — ±20 ±150 — ±20 — Reverse-Breakdown Voltage Long-Term Stability 1 mA ≤ IR ≤ 15 mA Ω IR = 1 mA, f = 120 Hz, IAC = 0.1 IR, TA = +25°C µVRMS IR = 100 µA, TA = +25°C, 10 Hz ≤ f ≤ 10 kHz LM4040D Reverse-Breakdown Voltage Reverse-Breakdown Voltage Tolerance (Note 2) Minimum Operating Current Average Reverse-Breakdown Voltage Temperature Coefficient Note 1: 2: IRMIN ∆VR/∆T — ppm/°C IR = 10 mA, TA = +25°C IR = 1 mA IR = 100 µA, TA = +25°C Specification for packaged product only. The boldface (overtemperature) limit for Reverse-Breakdown Voltage Tolerance is defined as the room temperature Reverse-Breakdown Voltage Tolerance ±[(∆VR/∆T)(65°C)(VR)]. ∆VR/∆T is the VR temperature coefficient, 65°C is the temperature range from –40°C to the reference point of 25°C, and VR is the reverse-breakdown voltage. The total overtemperature tolerance for the different grades follows: a. C-grade: ±1.15% = ±0.5% ±100 ppm/°C × 65°C b. D-grade: ±1.98% = ±1.0% ±150 ppm/°C × 65°C Example: The C-grade LM4040-2.5 has an overtemperature Reverse-Breakdown Voltage tolerance of ±2.5 × 1.15% = ±29 mV. DS20005757B-page 6  2017-2018 Microchip Technology Inc. LM4040/LM4041 LM4040-4.1 ELECTRICAL CHARACTERISTICS (Note 1) (CONTINUED) TA = Operating Temperature Range, TA = TJ = –40°C to +85°C, unless noted. Parameters Reverse-Breakdown Voltage Change with Operating Current Change Sym. Min. Typ. Max. Units ∆VR/∆IR — 0.5 1.2 mV — — 1.5 IRMIN ≤ IR ≤ 1 mA — 3.0 9.0 1 mA ≤ IR ≤ 15 mA, TA = +25°C — — 13.0 1 mA ≤ IR ≤ 15 mA Reverse Dynamic Impedance ZR — 0.5 1.3 Wideband Noise eN — 80 — ∆VR — 120 — Reverse-Breakdown Voltage Long-Term Stability Note 1: 2: Ω Conditions IRMIN ≤ IR ≤ 1 mA, TA = +25°C IR = 1 mA, f = 120 Hz, IAC = 0.1 IR, TA = +25°C µVRMS IR = 100 µA, TA = +25°C 10 Hz ≤ f ≤ 10 kHz ppm t = 1000 hrs., TA = +25°C ±0.1°C, IR = 100 µA Specification for packaged product only. The boldface (overtemperature) limit for Reverse-Breakdown Voltage Tolerance is defined as the room temperature Reverse-Breakdown Voltage Tolerance ±[(∆VR/∆T)(65°C)(VR)]. ∆VR/∆T is the VR temperature coefficient, 65°C is the temperature range from –40°C to the reference point of 25°C, and VR is the reverse-breakdown voltage. The total overtemperature tolerance for the different grades follows: a. C-grade: ±1.15% = ±0.5% ±100 ppm/°C × 65°C b. D-grade: ±1.98% = ±1.0% ±150 ppm/°C × 65°C Example: The C-grade LM4040-2.5 has an overtemperature Reverse-Breakdown Voltage tolerance of ±2.5 × 1.15% = ±29 mV.  2017-2018 Microchip Technology Inc. DS20005757B-page 7 LM4040/LM4041 LM4040-5.0 ELECTRICAL CHARACTERISTICS (Note 1) TA = Operating Temperature Range, TA = TJ = –40°C to +85°C, unless noted. Parameters Sym. Min. Typ. Max. Units Conditions VR — 5.000 — V IR = 100 µA, TA = +25°C — — ±25 mV IR = 100 µA, TA = +25°C — — ±58 mV IR = 100 µA — 54 74 µA TA = +25°C — — 80 — ±30 — — ±20 ±100 — ±20 — — 0.5 1.0 — — 1.4 IRMIN ≤ IR ≤ 1 mA — 3.5 8.0 1 mA ≤ IR ≤ 15 mA, TA = +25°C LM4040C Reverse-Breakdown Voltage Reverse-Breakdown Voltage Tolerance (Note 2) Minimum Operating Current IRMIN Average Reverse-Breakdown Voltage Temperature Coefficient ∆VR/∆T Reverse-Breakdown Voltage Change with Operating Current Change ∆VR/∆IR — ppm/°C IR = 10 mA, TA = +25°C IR = 1 mA IR = 100 µA, TA = +25°C mV IRMIN ≤ IR ≤ 1 mA, TA = +25°C — — 12.0 Reverse Dynamic Impedance ZR — 0.5 1.1 Wideband Noise eN — 80 — ∆VR — 120 — ppm t = 1000 hrs., TA = +25°C ±0.1°C, IR = 100 µA VR — 5.000 — V IR = 100 µA, TA = +25°C — — ±50 mV IR = 100 µA, TA = +25°C — — ±99 mV IR = 100 µA — 54 79 µA TA = +25°C — — 85 — ±30 — — ±20 ±150 — ±20 — Reverse-Breakdown Voltage Long-Term Stability 1 mA ≤ IR ≤ 15 mA Ω IR = 1 mA, f = 120 Hz, IAC = 0.1 IR, TA = +25°C µVRMS IR = 100 µA, TA = +25°C, 10 Hz ≤ f ≤ 10 kHz LM4040D Reverse-Breakdown Voltage Reverse-Breakdown Voltage Tolerance (Note 2) Minimum Operating Current Average Reverse-Breakdown Voltage Temperature Coefficient Note 1: 2: IRMIN ∆VR/∆T — ppm/°C IR = 10 mA, TA = +25°C IR = 1 mA IR = 100 µA, TA = +25°C Specification for packaged product only. The boldface (overtemperature) limit for Reverse-Breakdown Voltage Tolerance is defined as the room temperature Reverse-Breakdown Voltage Tolerance ±[(∆VR/∆T)(65°C)(VR)]. ∆VR/∆T is the VR temperature coefficient, 65°C is the temperature range from –40°C to the reference point of 25°C, and VR is the reverse-breakdown voltage. The total overtemperature tolerance for the different grades follows: a. C-grade: ±1.15% = ±0.5% ±100 ppm/°C × 65°C b. D-grade: ±1.98% = ±1.0% ±150 ppm/°C × 65°C Example: The C-grade LM4040-2.5 has an overtemperature Reverse-Breakdown Voltage tolerance of ±2.5 × 1.15% = ±29 mV. DS20005757B-page 8  2017-2018 Microchip Technology Inc. LM4040/LM4041 LM4040-5.0 ELECTRICAL CHARACTERISTICS (Note 1) (CONTINUED) TA = Operating Temperature Range, TA = TJ = –40°C to +85°C, unless noted. Parameters Reverse-Breakdown Voltage Change with Operating Current Change Sym. Min. Typ. Max. Units ∆VR/∆IR — 0.5 1.3 mV — — 1.8 IRMIN ≤ IR ≤ 1 mA — 3.5 10.0 1 mA ≤ IR ≤ 15 mA, TA = +25°C — — 15.0 1 mA ≤ IR ≤ 15 mA Reverse Dynamic Impedance ZR — 0.5 1.5 Wideband Noise eN — 80 — ∆VR — 120 — Reverse-Breakdown Voltage Long-Term Stability Note 1: 2: Ω Conditions IRMIN ≤ IR ≤ 1 mA, TA = +25°C IR = 1 mA, f = 120 Hz, IAC = 0.1 IR, TA = +25°C µVRMS IR = 100 µA, TA = +25°C, 10 Hz ≤ f ≤ 10 kHz ppm t = 1000 hrs., TA = +25°C ±0.1°C, IR = 100 µA Specification for packaged product only. The boldface (overtemperature) limit for Reverse-Breakdown Voltage Tolerance is defined as the room temperature Reverse-Breakdown Voltage Tolerance ±[(∆VR/∆T)(65°C)(VR)]. ∆VR/∆T is the VR temperature coefficient, 65°C is the temperature range from –40°C to the reference point of 25°C, and VR is the reverse-breakdown voltage. The total overtemperature tolerance for the different grades follows: a. C-grade: ±1.15% = ±0.5% ±100 ppm/°C × 65°C b. D-grade: ±1.98% = ±1.0% ±150 ppm/°C × 65°C Example: The C-grade LM4040-2.5 has an overtemperature Reverse-Breakdown Voltage tolerance of ±2.5 × 1.15% = ±29 mV.  2017-2018 Microchip Technology Inc. DS20005757B-page 9 LM4040/LM4041 LM4041-1.2 ELECTRICAL CHARACTERISTICS (Note 1) TA = Operating Temperature Range, TA = TJ = –40°C to +85°C, unless noted. Parameters Sym. Min. Typ. Max. Units Conditions VR — 1.225 — V IR = 100 µA, TA = +25°C — — ±6 mV IR = 100 µA, TA = +25°C — — ±14 mV IR = 100 µA — 45 60 µA TA = +25°C — — 65 — ±20 — — ±15 ±100 — ±15 — — 0.7 1.5 — — 2.0 IRMIN ≤ IR ≤ 1 mA — 4.0 6.0 1 mA ≤ IR ≤ 12 mA, TA = +25°C LM4041C Reverse-Breakdown Voltage Reverse-Breakdown Voltage Tolerance (Note 2) Minimum Operating Current IRMIN Average Reverse-Breakdown Voltage Temperature Coefficient ∆VR/∆T Reverse-Breakdown Voltage Change with Operating Current Change ∆VR/∆IR — ppm/°C IR = 10 mA, TA = +25°C IR = 1 mA IR = 100 µA, TA = +25°C mV IRMIN ≤ IR ≤ 1 mA, TA = +25°C — — 8.0 Reverse Dynamic Impedance ZR — 0.5 1.5 Wideband Noise eN — 20 — ∆VR — 120 — ppm t = 1000 hrs., TA = +25°C ±0.1°C, IR = 100 µA VR — 1.225 — V IR = 100 µA, TA = +25°C — — ±12 mV IR = 100 µA, TA = +25°C — — ±24 — 45 65 — — 70 — ±20 — — ±15 ±150 — ±15 — Reverse-Breakdown Voltage Long-Term Stability 1 mA ≤ IR ≤ 12 mA Ω IR = 1 mA, f = 120 Hz, IAC = 0.1 IR, TA = +25°C µVRMS IR = 100 µA, TA = +25°C, 10 Hz ≤ f ≤ 10 kHz LM4041D Reverse-Breakdown Voltage Reverse-Breakdown Voltage Tolerance (Note 2) Minimum Operating Current Average Reverse-Breakdown Voltage Temperature Coefficient Note 1: 2: IRMIN ∆VR/∆T IR = 100 µA µA TA = +25°C — ppm/°C IR = 10 mA, TA = +25°C IR = 1 mA IR = 100 µA, TA = +25°C Specification for packaged product only. The boldface (overtemperature) limit for Reverse-Breakdown Voltage Tolerance is defined as the room temperature Reverse-Breakdown Voltage Tolerance ±[(∆VR/∆T)(65°C)(VR)]. ∆VR/∆T is the VR temperature coefficient, 65°C is the temperature range from –40°C to the reference point of 25°C, and VR is the reverse-breakdown voltage. The total overtemperature tolerance for the different grades follows: a. C-grade: ±1.15% = ±0.5% ±100 ppm/°C × 65°C b. D-grade: ±1.98% = ±1.0% ±150 ppm/°C × 65°C Example: The C-grade LM4040-2.5 has an overtemperature Reverse-Breakdown Voltage tolerance of ±2.5 × 1.15% = ±29 mV. DS20005757B-page 10  2017-2018 Microchip Technology Inc. LM4040/LM4041 LM4041-1.2 ELECTRICAL CHARACTERISTICS (Note 1) (CONTINUED) TA = Operating Temperature Range, TA = TJ = –40°C to +85°C, unless noted. Parameters Reverse-Breakdown Voltage Change with Operating Current Change Sym. Min. Typ. Max. Units ∆VR/∆IR — 0.7 2.0 mV — — 2.5 IRMIN ≤ IR ≤ 1 mA — 2.5 8.0 1 mA ≤ IR ≤ 12 mA, TA = +25°C — — 10.0 1 mA ≤ IR ≤ 12 mA Reverse Dynamic Impedance ZR — 0.5 2.0 Wideband Noise eN — 20 — ∆VR — 120 — Reverse-Breakdown Voltage Long-Term Stability Note 1: 2: Ω Conditions IRMIN ≤ IR ≤ 1 mA, TA = +25°C IR = 1 mA, f = 120 Hz, IAC = 0.1 IR, TA = +25°C µVRMS IR = 100 µA, TA = +25°C, 10 Hz ≤ f ≤ 10 kHz ppm t = 1000 hrs., TA = +25°C ±0.1°C, IR = 100 µA Specification for packaged product only. The boldface (overtemperature) limit for Reverse-Breakdown Voltage Tolerance is defined as the room temperature Reverse-Breakdown Voltage Tolerance ±[(∆VR/∆T)(65°C)(VR)]. ∆VR/∆T is the VR temperature coefficient, 65°C is the temperature range from –40°C to the reference point of 25°C, and VR is the reverse-breakdown voltage. The total overtemperature tolerance for the different grades follows: a. C-grade: ±1.15% = ±0.5% ±100 ppm/°C × 65°C b. D-grade: ±1.98% = ±1.0% ±150 ppm/°C × 65°C Example: The C-grade LM4040-2.5 has an overtemperature Reverse-Breakdown Voltage tolerance of ±2.5 × 1.15% = ±29 mV.  2017-2018 Microchip Technology Inc. DS20005757B-page 11 LM4040/LM4041 LM4041-ADJ ELECTRICAL CHARACTERISTICS (Note 1) TA = Operating Temperature Range, TA = TJ = –40°C to +85°C, unless noted. Parameters Sym. Min. Typ. Max. Units Conditions VR — 1.233 — V IR = 100 µA, VOUT = 5V — — ±6.2 mV IR = 100 µA, TA = +25°C — — ±14 mV IR = 100 µA — 45 60 µA TA = +25°C — — 65 — 0.7 1.5 — — 2.0 IRMIN ≤ IR ≤ 1 mA, VOUT ≥ 1.6V (Note 3) — 2.0 4.0 1 mA ≤ IR ≤ 12 mA, VOUT ≥ 1.6V (Note 3), TA = +25°C — — 6.0 1 mA ≤ IR ≤ 12 mA, VOUT ≥ 1.6V (Note 3) ∆VREF/ ∆VO — –1.55 –2.0 — — –2.5 IFB — 60 100 — — 120 ∆VREF/ ∆T — ±20 — — ±15 ±100 — ±15 — — 0.3 — — — 2.0 VOUT = 10V, TA = +25°C — 20 — µVRMS IR = 100 µA, TA = +25°C, 10 Hz ≤ f ≤ 10 kHz LM4041C Reverse-Breakdown Voltage Reverse-Breakdown Voltage Tolerance (Note 2) Minimum Operating Current Reference Voltage Change with Operating Current Reference Voltage Change with Output Voltage Change Feedback Current Average Reference Voltage Temperature Coefficient Dynamic Output Impedance Wideband Noise Note 1: 2: 3: IRMIN ∆VREF/ ∆IR ZOUT eN — mV mV/V IRMIN ≤ IR ≤ 1 mA, VOUT ≥ 1.6V (Note 3), TA = +25°C IR = 1 mA, TA = +25°C IR = 1 mA nA TA = +25°C — ppm/°C VOUT = 5V, IR = 10 mA, TA = +25°C VOUT = 5V, IR = 1 mA VOUT = 5V, IR = 100 µA, TA = +25°C Ω IR = 1 mA, f = 120 Hz, TA = +25°C, IAC = 0.1 IR, VOUT = VREF Specification for packaged product only. The boldface (overtemperature) limit for Reverse-Breakdown Voltage Tolerance is defined as the room temperature Reverse-Breakdown Voltage Tolerance ±[(∆VR/∆T)(65°C)(VR)]. ∆VR/∆T is the VR temperature coefficient, 65°C is the temperature range from –40°C to the reference point of 25°C, and VR is the reverse-breakdown voltage. The total overtemperature tolerance for the different grades follows: a. C-grade: ±1.15% = ±0.5% ±100 ppm/°C × 65°C b. D-grade: ±1.98% = ±1.0% ±150 ppm/°C × 65°C Example: The C-grade LM4040-2.5 has an overtemperature Reverse-Breakdown Voltage tolerance of ±2.5 × 1.15% = ±29 mV. When VOUT ≤ 1.6V, the LM4041-ADJ must operate at reduced IR. This is caused by the series resistance of the die attach between the die (-) output and the package (-) output pin. See the Output Saturation curve in the Typical Performance Curves section. DS20005757B-page 12  2017-2018 Microchip Technology Inc. LM4040/LM4041 LM4041-ADJ ELECTRICAL CHARACTERISTICS (Note 1) (CONTINUED) TA = Operating Temperature Range, TA = TJ = –40°C to +85°C, unless noted. Parameters Reverse-Breakdown Voltage Long-Term Stability Sym. Min. Typ. Max. Units Conditions ∆VR — 120 — ppm VR — 1.233 — V IR = 100 µA, VOUT = 5V — — ±12 mV IR = 100 µA, TA = +25°C — — ±24 mV IR = 100 µA — 45 65 µA TA = +25°C — — 70 — 0.7 2.0 — — 2.5 IRMIN ≤ IR ≤ 1 mA, VOUT ≥ 1.6V (Note 3) — 2.0 6.0 1 mA ≤ IR ≤ 12 mA, VOUT ≥ 1.6V (Note 3), TA = +25°C — — 8.0 1 mA ≤ IR ≤ 12 mA, VOUT ≥ 1.6V (Note 3) ∆VREF/ ∆VO — –1.55 –2.5 — — –3.0 IFB — 60 150 — — 200 — ±20 — — ±15 ±150 — ±15 — — 0.3 — — — 2.0 t = 1000 hrs., TA = +25°C ±0.1°C, IR = 100 µA LM4041D Reverse-Breakdown Voltage Reverse-Breakdown Voltage Tolerance (Note 2) Minimum Operating Current Reference Voltage Change with Operating Current Reference Voltage Change with Output Voltage Change IRMIN ∆VREF/ ∆IR Feedback Current Average Reference Voltage Temperature Coefficient Dynamic Output Impedance Note 1: 2: 3: ∆VREF/ ∆T ZOUT — mV mV/V IRMIN ≤ IR ≤ 1 mA, VOUT ≥ 1.6V (Note 3), TA = +25°C IR = 1 mA, TA = +25°C IR = 1 mA nA TA = +25°C — ppm/°C VOUT = 5V, IR = 10 mA, TA = +25°C VOUT = 5V, IR = 1 mA VOUT = 5V, IR = 100 µA, TA = +25°C Ω IR = 1 mA, f = 120 Hz, TA = +25°C, IAC = 0.1 IR, VOUT = VREF VOUT = 10V, TA = +25°C Specification for packaged product only. The boldface (overtemperature) limit for Reverse-Breakdown Voltage Tolerance is defined as the room temperature Reverse-Breakdown Voltage Tolerance ±[(∆VR/∆T)(65°C)(VR)]. ∆VR/∆T is the VR temperature coefficient, 65°C is the temperature range from –40°C to the reference point of 25°C, and VR is the reverse-breakdown voltage. The total overtemperature tolerance for the different grades follows: a. C-grade: ±1.15% = ±0.5% ±100 ppm/°C × 65°C b. D-grade: ±1.98% = ±1.0% ±150 ppm/°C × 65°C Example: The C-grade LM4040-2.5 has an overtemperature Reverse-Breakdown Voltage tolerance of ±2.5 × 1.15% = ±29 mV. When VOUT ≤ 1.6V, the LM4041-ADJ must operate at reduced IR. This is caused by the series resistance of the die attach between the die (-) output and the package (-) output pin. See the Output Saturation curve in the Typical Performance Curves section.  2017-2018 Microchip Technology Inc. DS20005757B-page 13 LM4040/LM4041 LM4041-ADJ ELECTRICAL CHARACTERISTICS (Note 1) (CONTINUED) TA = Operating Temperature Range, TA = TJ = –40°C to +85°C, unless noted. Parameters Wideband Noise Reverse-Breakdown Voltage Long-Term Stability Note 1: 2: 3: Sym. Min. Typ. Max. eN — 20 — ∆VR — 120 — Units Conditions µVRMS IR = 100 µA, TA = +25°C, 10 Hz ≤ f ≤ 10 kHz ppm t = 1000 hrs., TA = +25°C ±0.1°C, IR = 100 µA Specification for packaged product only. The boldface (overtemperature) limit for Reverse-Breakdown Voltage Tolerance is defined as the room temperature Reverse-Breakdown Voltage Tolerance ±[(∆VR/∆T)(65°C)(VR)]. ∆VR/∆T is the VR temperature coefficient, 65°C is the temperature range from –40°C to the reference point of 25°C, and VR is the reverse-breakdown voltage. The total overtemperature tolerance for the different grades follows: a. C-grade: ±1.15% = ±0.5% ±100 ppm/°C × 65°C b. D-grade: ±1.98% = ±1.0% ±150 ppm/°C × 65°C Example: The C-grade LM4040-2.5 has an overtemperature Reverse-Breakdown Voltage tolerance of ±2.5 × 1.15% = ±29 mV. When VOUT ≤ 1.6V, the LM4041-ADJ must operate at reduced IR. This is caused by the series resistance of the die attach between the die (-) output and the package (-) output pin. See the Output Saturation curve in the Typical Performance Curves section. DS20005757B-page 14  2017-2018 Microchip Technology Inc. LM4040/LM4041 TEMPERATURE SPECIFICATIONS (Note 1) Parameters Sym. Min. Typ. Max. Units Conditions Operating Temperature Range TA –40 — +85 °C — Storage Temperature TS –65 — +150 °C — Lead Temperature — — +215 — °C Vapor phase, 60s Lead Temperature — — +220 — °C Infrared, 15s ΘJA — +326 — °C/W Temperature Ranges Package Thermal Resistance 3-Pin SOT-23 Note 1: — The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the thermal resistance from junction to air (i.e., TA, TJ, JA). Exceeding the maximum allowable power dissipation will cause the device operating junction temperature to exceed the maximum +125°C rating. Sustained junction temperatures above +125°C can impact the device reliability. Test Circuits RS VIN 1Hz RATE LM4040 IR VR + LM4040. FIGURE 1-1: CL 120k FB – RS 30k VIN 1Hz rate V LM4041-1.2 FIGURE 1-4: Output Impedance vs. Frequency Test Circuit. R + 15V FIGURE 1-2: LM4041. 5.1k INPUT 100k IR (+) LM4041-ADJ FB V OUT ( – ) 2V / step FIGURE 1-5: Circuit. FB (+) LM4041-ADJ VOUT (–) Large Signal Response Test V FIGURE 1-3: Test Circuit. Reverse Characteristics  2017-2018 Microchip Technology Inc. DS20005757B-page 15 LM4040/LM4041 2.0 Note: TYPICAL PERFORMANCE CURVES The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. LM4040 Noise Voltage vs. FIGURE 2-1: vs. Frequency. LM4040 Output Impedance FIGURE 2-4: Frequency. FIGURE 2-2: vs. Frequency. LM4040 Output Impedance FIGURE 2-5: LM4040-2.5 Start-Up Characteristics (RS = 30 kΩ). FIGURE 2-3: LM4040 Reverse Characteristics and Minimum Operating Current. DS20005757B-page 16 FIGURE 2-6: LM4040-5.0 Start-Up Characteristics (RS = 30 kΩ).  2017-2018 Microchip Technology Inc. LM4040/LM4041 FIGURE 2-7: Frequency. LM4041 Noise Voltage vs. FIGURE 2-8: LM4041 Output Saturation. FIGURE 2-9: vs. Frequency. LM4041 Output Impedance  2017-2018 Microchip Technology Inc. FIGURE 2-10: Response. LM4041 Large Signal DS20005757B-page 17 LM4040/LM4041 3.0 PIN DESCRIPTIONS The descriptions of the pins are listed in Table 3-1. TABLE 3-1: PIN FUNCTION TABLE Pin Number Fixed Pin Number Adjustable Pin Name 1 2 + — 1 FB 2 3 – 3 — NC DS20005757B-page 18 Description Cathode. Connect to positive voltage. Feedback. Connect to a resistive divider network to set the output voltage. Anode. Connect to negative voltage. Not internally connected. This pin must be left floating or connected to –.  2017-2018 Microchip Technology Inc. LM4040/LM4041 4.0 APPLICATION INFORMATION The stable operation of the LM4040 and LM4041 references require an external capacitor greater than 10 nF connected between the (+) and (–) pins. Bypass capacitors with values between 100 pF and 10 nF have been found to cause the devices to exhibit instabilities. The actual value of the internal VREF is a function of VO. The corrected VREF is determined by: EQUATION 4-3: V REF V REF = V O   ---------------- + V Y  V O  Where: 4.1 Schottky Diode VO Desired Output Voltage LM4040-x.x and LM4041-1.2 in the SOT-23 package have a parasitic Schottky diode between Pin 2 (–) and Pin 3 (die attach interface connect). Pin 3 of the SOT-23 package must float or be connected to Pin 2. The LM4041-ADJ use Pin 3 as the (–) output. ∆VREF/∆VO is found in the Electrical Characteristics section and is typically –1.3 mV/V and VY is equal to 1.233V. Replace the value of VREF in Equation 4-2 with the value VREF found using Equation 4-3. 4.2 Note that actual output voltage can deviate from that predicted using the typical ∆VREF/∆VO in Equation 4-3; for C-grade parts, the worst case ∆VREF/∆VO is – 2.5 mV/V and VY = 1.248V. Conventional Shunt Regulator In a conventional shunt regulator application (see Figure 5-1), an external series resistor (RS) is connected between the supply voltage and the LM4040-x.x or LM4041-1.2 reference. RS determines the current that flows through the load (IL) and the reference (IQ). Because load current and supply voltage may vary, RS should be small enough to supply at least the minimum acceptable IQ to the reference even when the supply voltage is at its minimum and the load current is at its maximum value. When the supply voltage is at its maximum and IL is at its minimum, RS should be large enough so that the current flowing through the LM4040-x.x is less than 15 mA, and the current flowing through the LM4041-1.2 or LM4041-ADJ is less than 12 mA. The following example shows the difference in output voltage resulting from the typical and worst case values of ∆VREF/∆VO. Let VO = +9V. Using the typical values of ∆VREF/∆VO, VREF is 1.223V. Choosing a value of R1 = 10 kΩ, R2 = 63.272 kΩ. Using the worst case ∆VREF/∆VO for the C-grade and D-grade parts, the output voltage is actually 8.965V and 8.946V respectively. This results in possible errors as large as 0.39% for the C-grade parts and 0.59% for the D-grade parts. Once again, resistor values found using the typical value of ∆VREF/∆VO will work in most cases, requiring no further adjustment. RS is determined by the supply voltage (VS), the load and operating current, (IL and IQ), and the reference’s reverse breakdown voltage (VR): EQUATION 4-1:  VS – VR  R S = ---------------------- IL + IQ  4.3 Adjustable Regulator The LM4041-ADJ’s output voltage can be adjusted to any value between 1.24V and 10V. It is a function of the internal reference voltage (VREF) and the ratio of the external feedback resistors as shown in Figure 5-2. The output is found using the following equation: EQUATION 4-2: V O = V REF   R2  R1  + 1  Where: VO Desired Output Voltage  2017-2018 Microchip Technology Inc. DS20005757B-page 19 LM4040/LM4041 5.0 TYPICAL APPLICATION CIRCUITS VIN R1 + FB 120k LM4041-ADJ – D1 I R2 1M λ < –12V R3 LED ON 200 + LM4041-ADJ FB – D1 1N457 R1 VOUT R2 D2 510k – 1N457 FB LM4041-ADJ + R3 510k –5V Voltage Level Detector. FIGURE 5-1: Bidirectional Clamp ±2.4V. FIGURE 5-4: VIN + λ D1 FB LM4041– ADJ R1 120k I R2 1M > –12V R3 LED ON 330 R2 390k + LM4041-ADJ R3 500k R1 VOUT D1 1N914 50A VIN I LM4041-ADJ – FB R3 240k + LM4041-ADJ R2 330k DS20005757B-page 20 D2 1N457 FB – R3 1M R4 240k D1 1N457 FIGURE 5-3: ∆VD1. R1 VOUT D2 1N914 + R4 390k FIGURE 5-5: Bidirectional Adjustable Clamp ±1.8V to ±2.4V. VIN R2 LM4041-ADJ + FB D1 1N457 Voltage Level Detector. I FB – VOUT D2 1N457 – –5V FIGURE 5-2: R1 FB – R4 330k LM4041-ADJ + Fast Positive Clamp, 2.4V + FIGURE 5-6: Bidirectional Adjustable Clamp ±2.4V to ±6V.  2017-2018 Microchip Technology Inc. LM4040/LM4041 0 to 20mA + 5V R1 390Ω ± 2% 1N4002 D2 + LM4041-ADJ FB D1* λ N.C. I THRESHOLD = R2 470k – 1 6 2 5 3 N.C. CMOS 4 4N28 5A 1.24V + = 3.2mA R1 4N28 GAIN * D1 can be any LED, VF = 1.5V to 2.2V at 3mA. D1 may act as an indicator. D1 will be on if ITHRESHOLD falls below the threshold current, except with I = O. FIGURE 5-7: Floating Current Detector. +15V + LM4041-ADJ R1 FB – 2N2905 2N 3964 R2 120k 1A < IOUT = 100mA 1.24V I OUT = R1 FIGURE 5-8: Current Source. 0 to 20 mA R1 332Ω ±1% D2 1N4002 +5V + FB LM4041-ADJ – 1N914 R3 100k 2N2222 R2 22k D1* λ 1 6 2 5 3 N.C. 1.24V I THRESHOLD = = 3.7mA ± 2% R1 4N28 4 R4 10M CMOS * D1 can be any LED, VF = 1.5V to 2.2V at 3mA. D1 may act as an indicator. D1 will be on if ITHRESHOLD falls below the threshold current, except with I = O. FIGURE 5-9: Precision Floating Current Detector.  2017-2018 Microchip Technology Inc. DS20005757B-page 21 LM4040/LM4041 6.0 PACKAGING INFORMATION 6.1 Package Marking Information 3-Pin SOT-23* Top Side Bottom Side XXX NNN Example Top Side Bottom Side Y2D J9M Device Top Side Marking LM4040CYM3-2.5-TR Y2C LM4040CYM3-4.1-TR Y4C LM4040CYM3-5.0-TR Y5C LM4040DYM3-2.5-TR Y2D LM4040DYM3-4.1-TR Y4D LM4040DYM3-5.0-TR Y5D LM4041CYM3-ADJ-TR YAC LM4041CYM3-1.2-TR Y1C LM4041DYM3-ADJ-TR YAD LM4041DYM3-1.2-TR Y1D Legend: XX...X Y YY WW NNN e3 * Product code or customer-specific information Year code (last digit of calendar year) Year code (last 2 digits of calendar year) Week code (week of January 1 is week ‘01’) Alphanumeric traceability code Pb-free JEDEC® designator for Matte Tin (Sn) This package is Pb-free. The Pb-free JEDEC designator ( e3 ) can be found on the outer packaging for this package. ●, ▲, ▼ Pin one index is identified by a dot, delta up, or delta down (triangle mark). Note: In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for customer-specific information. Package may or may not include the corporate logo. Underbar (_) and/or Overbar (⎯) symbol may not be to scale. DS20005757B-page 22  2017-2018 Microchip Technology Inc. LM4040/LM4041 3-Lead SOT-23 Package Outline and Recommended Land Pattern Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging.  2017-2018 Microchip Technology Inc. DS20005757B-page 23 LM4040/LM4041 NOTES: DS20005757B-page 24  2017-2018 Microchip Technology Inc. LM4040/LM4041 APPENDIX A: REVISION HISTORY Revision A (April 2017) • Converted Micrel data sheet LM4040/LM4041 to Microchip DS20005757A. • Minor text changes throughout. • Updated temperature information in all Electrical Characteristics tables to better reflect which values are valid for TA = +25°C. Revision B (July 2018) • Corrected part number for Reverse Current in Operating Ratings ‡ to LM4041-ADJ. • Updated Section 6.1 “Package Marking Information” drawing and information. • Updated information in Product Identification System. • Updated “Reverse-Breakdown Voltage Change with Operating Current Change” conditions for LM4041-1.2 Electrical Characteristics (Note 1) and LM4041-ADJ Electrical Characteristics (Note 1).  2017-2018 Microchip Technology Inc. DS20005757B-page 25 LM4040/LM4041 NOTES: DS20005757B-page 26  2017-2018 Microchip Technology Inc. LM4040/LM4041 PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, contact your local Microchip representative or sales office. PART NO. Device X X XX Accuracy, Temperature Package Temperature Range Coefficient Device: LM4040: -X.X -XX Voltage Media Type Precision Micropower Shunt Voltage Reference Precision Micropower Shunt Voltage Reference LM4041: Examples: a) LM4040CYM3-2.5-TR: LM4040, ±0.5%, 100 ppm/°C, –40°C to +85°C Temp. Range, 3-Lead SOT-23, 2.500V, 3,000/Reel b) LM4040CYM3-4.1-TR: LM4040, ±0.5%, 100 ppm/°C, –40°C to +85°C Temp. Range, 3-Lead SOT-23, 4.096V, 3,000/Reel c) LM4040CYM3-5.0-TR: Accuracy, Temp. Coefficient: C D = = ±0.5%, 100 ppm/C ±1.0%, 150 ppm/C Temperature Range: Y = –40C to +85C (Industrial) Package: M3 = 3-Lead SOT-23 Voltage: -2.5 -4.1 -5.0 -1.2 ADJ = = = = = 2.500V 4.096V 5.000V 1.225V (LM4041 Only) 1.24V to 10V (LM4041 Only) TR = 3,000/Reel Media Type LM4040, ±0.5%, 100 ppm/°C, –40°C to +85°C Temp. Range, 3-Lead SOT-23, 5.000V, 3,000/Reel d) LM4040DYM3-2.5-TR: LM4040, ±1.0%, 150 ppm/°C, –40°C to +85°C Temp. Range, 3-Lead SOT-23, 2.500V, 3,000/Reel e) LM4040DYM3-4.1-TR: LM4040, ±1.0%, 150 ppm/°C, –40°C to +85°C Temp. Range, 3-Lead SOT-23, 4.096V, 3,000/Reel f) LM4040DYM3-5.0-TR: LM4040, ±1.0%, 150 ppm/°C, –40°C to +85°C Temp. Range, 3-Lead SOT-23, 5.000V, 3,000/Reel g) LM4041CYM3-ADJ-TR: LM4041, ±0.5%, 100 ppm/°C, –40°C to +85°C Temp. Range, 3-Lead SOT-23, 1.24V to 10V, 3,000/Reel h) LM4041CYM3-1.2-TR: LM4041, ±0.5%, 100 ppm/°C, –40°C to +85°C Temp. Range, 3-Lead SOT-23, 1.225V, 3,000/Reel i) LM4041DYM3-ADJ-TR: LM4041, ±1.0%, 150 ppm/°C, –40°C to +85°C Temp. Range, 3-Lead SOT-23, 1.24V to 10V, 3,000/Reel j) LM4041DYM3-1.2-TR: Note 1:  2017-2018 Microchip Technology Inc. LM4041, ±1.0%, 150 ppm/°C, –40°C to +85°C Temp. Range, 3-Lead SOT-23, 1.225V, 3,000/Reel Tape and Reel identifier only appears in the catalog part number description. This identifier is used for ordering purposes and is not printed on the device package. Check with your Microchip Sales Office for package availability with the Tape and Reel option. DS20005757B-page 27 LM4040/LM4041 NOTES: DS20005757B-page 28  2017-2018 Microchip Technology Inc. Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet. • Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the intended manner and under normal conditions. • There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property. • Microchip is willing to work with the customer who is concerned about the integrity of their code. • Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not mean that we are guaranteeing the product as “unbreakable.” Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act. Information contained in this publication regarding device applications and the like is provided only for your convenience and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. MICROCHIP MAKES NO REPRESENTATIONS OR WARRANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED, WRITTEN OR ORAL, STATUTORY OR OTHERWISE, RELATED TO THE INFORMATION, INCLUDING BUT NOT LIMITED TO ITS CONDITION, QUALITY, PERFORMANCE, MERCHANTABILITY OR FITNESS FOR PURPOSE. Microchip disclaims all liability arising from this information and its use. Use of Microchip devices in life support and/or safety applications is entirely at the buyer’s risk, and the buyer agrees to defend, indemnify and hold harmless Microchip from any and all damages, claims, suits, or expenses resulting from such use. No licenses are conveyed, implicitly or otherwise, under any Microchip intellectual property rights unless otherwise stated. Trademarks Microchip received ISO/TS-16949:2009 certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona; Gresham, Oregon and design centers in California and India. The Company’s quality system processes and procedures are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping devices, Serial EEPROMs, microperipherals, nonvolatile memory and analog products. In addition, Microchip’s quality system for the design and manufacture of development systems is ISO 9001:2000 certified. SQTP is a service mark of Microchip Technology Incorporated in the U.S.A. QUALITY MANAGEMENT SYSTEM CERTIFIED BY DNV == ISO/TS 16949 ==  2017-2018 Microchip Technology Inc. The Microchip name and logo, the Microchip logo, AnyRate, AVR, AVR logo, AVR Freaks, BitCloud, chipKIT, chipKIT logo, CryptoMemory, CryptoRF, dsPIC, FlashFlex, flexPWR, Heldo, JukeBlox, KeeLoq, Kleer, LANCheck, LINK MD, maXStylus, maXTouch, MediaLB, megaAVR, MOST, MOST logo, MPLAB, OptoLyzer, PIC, picoPower, PICSTART, PIC32 logo, Prochip Designer, QTouch, SAM-BA, SpyNIC, SST, SST Logo, SuperFlash, tinyAVR, UNI/O, and XMEGA are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. ClockWorks, The Embedded Control Solutions Company, EtherSynch, Hyper Speed Control, HyperLight Load, IntelliMOS, mTouch, Precision Edge, and Quiet-Wire are registered trademarks of Microchip Technology Incorporated in the U.S.A. Adjacent Key Suppression, AKS, Analog-for-the-Digital Age, Any Capacitor, AnyIn, AnyOut, BodyCom, CodeGuard, CryptoAuthentication, CryptoAutomotive, CryptoCompanion, CryptoController, dsPICDEM, dsPICDEM.net, Dynamic Average Matching, DAM, ECAN, EtherGREEN, In-Circuit Serial Programming, ICSP, INICnet, Inter-Chip Connectivity, JitterBlocker, KleerNet, KleerNet logo, memBrain, Mindi, MiWi, motorBench, MPASM, MPF, MPLAB Certified logo, MPLIB, MPLINK, MultiTRAK, NetDetach, Omniscient Code Generation, PICDEM, PICDEM.net, PICkit, PICtail, PowerSmart, PureSilicon, QMatrix, REAL ICE, Ripple Blocker, SAM-ICE, Serial Quad I/O, SMART-I.S., SQI, SuperSwitcher, SuperSwitcher II, Total Endurance, TSHARC, USBCheck, VariSense, ViewSpan, WiperLock, Wireless DNA, and ZENA are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. Silicon Storage Technology is a registered trademark of Microchip Technology Inc. in other countries. GestIC is a registered trademark of Microchip Technology Germany II GmbH & Co. KG, a subsidiary of Microchip Technology Inc., in other countries. All other trademarks mentioned herein are property of their respective companies. © 2017-2018, Microchip Technology Incorporated, All Rights Reserved. ISBN: 978-1-5224-3309-5 DS20005757B-page 29 Worldwide Sales and Service AMERICAS ASIA/PACIFIC ASIA/PACIFIC EUROPE Corporate Office 2355 West Chandler Blvd. Chandler, AZ 85224-6199 Tel: 480-792-7200 Fax: 480-792-7277 Technical Support: http://www.microchip.com/ support Web Address: www.microchip.com Australia - Sydney Tel: 61-2-9868-6733 India - Bangalore Tel: 91-80-3090-4444 China - Beijing Tel: 86-10-8569-7000 India - New Delhi Tel: 91-11-4160-8631 Austria - Wels Tel: 43-7242-2244-39 Fax: 43-7242-2244-393 China - Chengdu Tel: 86-28-8665-5511 India - Pune Tel: 91-20-4121-0141 Denmark - Copenhagen Tel: 45-4450-2828 Fax: 45-4485-2829 China - Chongqing Tel: 86-23-8980-9588 Japan - Osaka Tel: 81-6-6152-7160 Finland - Espoo Tel: 358-9-4520-820 China - Dongguan Tel: 86-769-8702-9880 Japan - Tokyo Tel: 81-3-6880- 3770 China - Guangzhou Tel: 86-20-8755-8029 Korea - Daegu Tel: 82-53-744-4301 France - Paris Tel: 33-1-69-53-63-20 Fax: 33-1-69-30-90-79 China - Hangzhou Tel: 86-571-8792-8115 Korea - Seoul Tel: 82-2-554-7200 China - Hong Kong SAR Tel: 852-2943-5100 Malaysia - Kuala Lumpur Tel: 60-3-7651-7906 China - Nanjing Tel: 86-25-8473-2460 Malaysia - Penang Tel: 60-4-227-8870 China - Qingdao Tel: 86-532-8502-7355 Philippines - Manila Tel: 63-2-634-9065 China - Shanghai Tel: 86-21-3326-8000 Singapore Tel: 65-6334-8870 China - Shenyang Tel: 86-24-2334-2829 Taiwan - Hsin Chu Tel: 886-3-577-8366 China - Shenzhen Tel: 86-755-8864-2200 Taiwan - Kaohsiung Tel: 886-7-213-7830 Israel - Ra’anana Tel: 972-9-744-7705 China - Suzhou Tel: 86-186-6233-1526 Taiwan - Taipei Tel: 886-2-2508-8600 China - Wuhan Tel: 86-27-5980-5300 Thailand - Bangkok Tel: 66-2-694-1351 Italy - Milan Tel: 39-0331-742611 Fax: 39-0331-466781 China - Xian Tel: 86-29-8833-7252 Vietnam - Ho Chi Minh Tel: 84-28-5448-2100 Atlanta Duluth, GA Tel: 678-957-9614 Fax: 678-957-1455 Austin, TX Tel: 512-257-3370 Boston Westborough, MA Tel: 774-760-0087 Fax: 774-760-0088 Chicago Itasca, IL Tel: 630-285-0071 Fax: 630-285-0075 Dallas Addison, TX Tel: 972-818-7423 Fax: 972-818-2924 Detroit Novi, MI Tel: 248-848-4000 Houston, TX Tel: 281-894-5983 Indianapolis Noblesville, IN Tel: 317-773-8323 Fax: 317-773-5453 Tel: 317-536-2380 Los Angeles Mission Viejo, CA Tel: 949-462-9523 Fax: 949-462-9608 Tel: 951-273-7800 Raleigh, NC Tel: 919-844-7510 New York, NY Tel: 631-435-6000 San Jose, CA Tel: 408-735-9110 Tel: 408-436-4270 Canada - Toronto Tel: 905-695-1980 Fax: 905-695-2078 DS20005757B-page 30 China - Xiamen Tel: 86-592-2388138 China - Zhuhai Tel: 86-756-3210040 Germany - Garching Tel: 49-8931-9700 Germany - Haan Tel: 49-2129-3766400 Germany - Heilbronn Tel: 49-7131-67-3636 Germany - Karlsruhe Tel: 49-721-625370 Germany - Munich Tel: 49-89-627-144-0 Fax: 49-89-627-144-44 Germany - Rosenheim Tel: 49-8031-354-560 Italy - Padova Tel: 39-049-7625286 Netherlands - Drunen Tel: 31-416-690399 Fax: 31-416-690340 Norway - Trondheim Tel: 47-7289-7561 Poland - Warsaw Tel: 48-22-3325737 Romania - Bucharest Tel: 40-21-407-87-50 Spain - Madrid Tel: 34-91-708-08-90 Fax: 34-91-708-08-91 Sweden - Gothenberg Tel: 46-31-704-60-40 Sweden - Stockholm Tel: 46-8-5090-4654 UK - Wokingham Tel: 44-118-921-5800 Fax: 44-118-921-5820  2017-2018 Microchip Technology Inc. 10/25/17