MCP1631T-E/STVAO

MCP1631/HV/MCP1631V/VHV High-Speed, Pulse Width Modulator Features General Description • Programmable Switching Battery Charger Designs • High-Speed Analog PWM Controller (2 MHz Operation) • Combine with Microcontroller for “Intelligent” Power System Development • Peak Current Mode Control (MCP1631) • Voltage Mode Control (MCP1631V) • High Voltage Options Operate to +16V Input: - MCP1631HV Current Mode - MCP1631VHV Voltage Mode • Regulated Output Voltage Options: +5.0V or +3.3V 250 mA maximum current • External Oscillator Input sets Switching Frequency and Maximum Duty Cycle Limit • External Reference Input Sets Regulation Voltage or Current • Error Amplifier, Battery Current ISNS Amplifier, Battery Voltage VSNS Amplifier Integrated • Integrated Overvoltage Comparator • Integrated High Current Low Side MOSFET Driver (1A Peak) • Shutdown mode reduces IQ to 2.4 µA (typical) • Internal Overtemperature Protection • Undervoltage Lockout (UVLO) • Package Options: - 4 mm x 4 mm 20-Lead QFN (MCP1631/MCP1631V only) - 20-Lead TSSOP (All Devices) - 20-Lead SSOP (All Devices) T he MCP16 31/MC P1631 V is a hi gh-spe ed analog pulse width modulator (PWM) used to develop intelligent power systems. When combined with a microcontroller, the MCP1631/MCP1631V will control the power system duty cycle providing output voltage or current regulation. The microcontroller can be used to adjust output voltage or current, switching frequency and maximum duty cycle while providing additional features making the power system more intelligent, robust and adaptable. Typical applications for the MCP1631/MCP1631V include programmable switch mode battery chargers capable of charging multiple chemistries, like Li-Ion, NiMH, NiCd and Pb-Acid configured as single or multiple cells. By combining with a small microcontroller, intelligent LED lighting designs and programmable SEPIC topology voltage and current sources can also be developed. The MCP1631/MCP1631V inputs were developed to be attached to the I/O pins of a microcontroller for design flexibility. Additional features integrated into the MCP1631HV/MCP1631VHV provide signal conditioning and protection features for battery charger or constant current source applications. For applications that operate from a high voltage input, the MCP1631HV and MCP1631VHV device options can be used to operate directly from a +3.5V to +16V input. For these applications, an additional low drop out +5V or +3.3V regulated output is available and can provide current up to 250 mA to power a microcontroller and auxiliary circuits. Applications • High Input Voltage Programmable Switching Battery Chargers • Supports Multiple Chemistries Li-Ion, NiMH, NiCd Intelligent and Pb-Acid • LED Lighting Applications • Constant Current SEPIC Power Train Design • USB Input Programmable Switching Battery Chargers © 2008 Microchip Technology Inc. DS22063B-page 1 MCP1631/HV/MCP1631V/VHV Package Types 20-Lead SSOP and TSSOP 20-Lead SSOP and TSSOP MCP1631/MCP1631V MCP1631HV/MCP1631VHV PGND 1 20 VEXT PGND 1 20 VEXT SHDN 2 19 PVDD SHDN 2 19 PVDD OSCIN 3 18 CS/VRAMP OSCIN 3 18 OSCDIS 4 17 FB OSCDIS 4 17 FB OVIN 5 16 COMP OVIN 5 16 VREF 6 15 ISOUT VREF 6 15 ISOUT AGND 7 14 VSOUT AGND 7 14 NC 8 13 ISIN NC 8 13 ISIN NC 9 12 VSIN NC 9 12 VSIN NC 10 11 VIN 10 11 VREF OVIN OSCDIS OSCIN SHDN AVDD_IN 20 19 18 17 16 AGND 1 15 PGND NC 2 14 VEXT AVDD_IN 3 NC 4 12 NC VSIN 5 11 CS/VRAMP EP 7 8 9 10 VSOUT ISOUT COMP FB ISIN COMP VSOUT AVDD_OUT 13 PVDD 21 6 CS/VRAMP 20 Lead 4x4 QFN MCP1631/MCP1631V DS22063B-page 2 © 2008 Microchip Technology Inc. MCP1631/HV/MCP1631V/VHV Typical Application Diagram Multi-cell, Multi-Chemistry Charger VIN Range +5.5V to +16V L1A CC SCHOTTKY DIODE COUT CIN RTHERM L1B MCP1631HV VEXT VIN CS AVDD_OUT PVDD PGND OSCIN ISIN ISOUT OVIN NC VSIN FB VREF NC SHDN COMP OSCDIS AGND VSOUT R C PIC12F683 VDD GP1/C CCP1 GP3 GP4 GP5 GND GP0/C AVDD_OUT LED © 2008 Microchip Technology Inc. DS22063B-page 3 MCP1631/HV/MCP1631V/VHV Functional Block Diagram(1) MCP1631HV/VHV High Speed PIC PWM Internal Regulator for MCP1631HV and MCP1631VHV Options Only; For MCP1631 and MCP1631V AVDD_IN is input +3.3V or +5.0V LDO 250 mA VIN VDD Internal 1.2V VREF VDD AVDD_OUT / AVDD_IN Shutdown Control A3 Remains On SHDN Overvoltage Comp w/ Hysteresis C2 + OVIN PVDD OSCDIS VDD 100 kΩ 0.1 µA OT OSCIN VEXT UVLO S VDD PGND Q VDD + C1 - COMP Q R VDD VDD A1 + 2R R AGND Remove for MCP1631V and MCP1631VHV Options R ISIN R ISOUT VDD 2.7V Clamp A3 + VREF A2 + FB 100 kΩ 10R - CS/VRAMP VSIN Note 1: For Shutdown control, amplifier A3 remains functional so battery voltage can be sensed during discharge phase. VSOUT 2: For HV options, internal Low Drop Out Regulator provides +3.3V or +5.0V bias to VDD. DS22063B-page 4 © 2008 Microchip Technology Inc. MCP1631/HV/MCP1631V/VHV 1.0 ELECTRICAL CHARACTERISTICS † Notice: Stresses above those listed under "Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended periods may affect device reliability. Absolute Maximum Ratings † VIN - GND (MCP1631/V)................................................+6.5V VIN - GND (MCP1631HV/VHV)....................................+18.0V All Other I/O ..............................(GND - 0.3V) to (VDD + 0.3V) LX to GND............................................. -0.3V to (VDD + 0.3V) VEXT Output Short Circuit Current ........................ Continuous Storage temperature .....................................-65°C to +150°C Maximum Junction Temperature ...................-40°C to +150°C Operating Junction Temperature...................-40°C to +125°C ESD Protection On All Pins: HBM ................................................................................. 4 kV MM ..................................................................................400V DC CHARACTERISTICS Electrical Specifications: Unless otherwise noted, VIN = 3.0V to 5.5V, FOSC = 1 MHz with 10% Duty Cycle, CIN = 0.1 µF, VDD for typical values = 5.0V, TA for typical values = +25°C, TA = -40°C to +125°C for all minimum and maximums. Parameters Sym Min Typ Max Units Conditions Input Voltage (MCP1631/V) VDD 3.0 — 5.5 V Non-HV Options Input Voltage (MCP1631HV/VHV) VDD 3.5 — 16.0 V HV Options (Note 2) UVLO 2.7 2.8 3.0 V VIN Falling, VEXT low when input below UVLO threshold Undervoltage Lockout Hysteresis (MCP1631/MCP1631V) UVLO_HYS 40 64 100 mV UVLO Hysteresis Input Quiescent Current (MCP1631/V, MCP1631HV,VHV) I(VIN) — 3.7 5 mA SHDN = VDD =OSCDIS IIN_SHDN — 2.4 4.4 12 17 µA µA SHDN = GND =OSCDIS, Note: Amplifier A3 remains powered during Shutdown. Input Characteristics Undervoltage Lockout (MCP1631/V) Shutdown Current I_AVDD for MCP1631/V I_VIN for MCP1631HV/VHV OSCIN, OSCDIS and SHDN Input Levels Low Level Input Voltage VIL — — 0.8 V High Level Input Voltage VIH 2.0 — — V 0.005 1 µA — — 2 MHz — 10 — ns Input Leakage Current ILEAK External Oscillator Range FOSC Minimum Oscillator High Time Minimum Oscillator Low Time TOH_MIN. TOL_MIN. Oscillator Rise and Fall Time TR and TF 0.01 — 10 µs Oscillator Input Capacitance COSC — 5 — pf Note 1: 2: 3: 4: 5: Maximum operating frequency is dependent upon circuit topology and duty cycle. Note 1 External Oscillator Input (OSCIN) rise and fall times between 10 ns and 10 µs were determined during device characterization testing. Signal levels between 0.8V and 2.0V with rise and fall times measured between 10% and 90% of maximum and minimum values. Not production tested. Additional timing specifications were fully characterized and specified that are not production tested. The minimum VIN must meet two conditions: VIN ≥ 3.5V and VIN ≥ (VOUT(MAX) + VDROPOUT(MAX)). TCVOUT = (VOUT-HIGH - VOUT-LOW) *106 / (VR * ΔTemperature), VOUT-HIGH = highest voltage measured over the temperature range. VOUT-LOW = lowest voltage measured over the temperature range. Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output voltage due to heating effects are determined using thermal regulation specification TCVOUT. Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its measured value with an applied input voltage of VOUT(MAX) + VDROPOUT(MAX) or 3.5V, whichever is greater. © 2008 Microchip Technology Inc. DS22063B-page 5 MCP1631/HV/MCP1631V/VHV DC CHARACTERISTICS (CONTINUED) Electrical Specifications: Unless otherwise noted, VIN = 3.0V to 5.5V, FOSC = 1 MHz with 10% Duty Cycle, CIN = 0.1 µF, VDD for typical values = 5.0V, TA for typical values = +25°C, TA = -40°C to +125°C for all minimum and maximums. Parameters Sym Min Typ Max Units Conditions VREF 0 — AVDD V The reference input is capable of rail-to-rail operation. RDSON P-channel RDSon_P — 7.2 15 Ω RDSON N-channel External Reference Input Reference Voltage Input Internal Driver) RDSon_N — 3.8 15 Ω VEXT Rise Time TRISE — 2.5 18 ns CL = 100 pF Typical for VIN = 5V (Note 1) VEXT Fall Time TFALL — 2.7 18 ns CL = 100 pF Typical for VIN = 5V (Note 1) mV Error Amplifier (A1) Input Offset Voltage VOS -5 -0.6 +5 A1 Input Bias Current IBIAS — 0.05 1 µA Error Amplifier PSRR PSRR — 85.4 — dB VCM GND - 0.3 — VIN V — 90 — dB VIN = 5V, VCM = 0V to 2.5V AVOL 80 95 — dB RL = 5 kΩ to VIN/2, 100 mV < VEAOUT < VIN - 100 mV, VCM = 1.2V Common Mode Input Range Common Mode Rejection Ratio Open-loop Voltage Gain VIN = 3.0V to 5.0V, VCM = 1.2V VOL — 25 GND + 65 mV RL = 5 kΩ to VIN/2 GBWP — 3.5 — MHz VIN = 5V ISINK 4 12 — mA VIN = 5V, VREF = 1.2V, VFB = 1.4V, VCOMP = 2.0V ISOURCE -2 -9.8 — mA VIN = 5V, VREF = 1.2V, VFB = 1.0V, VCOMP = 2.0V, Absolute Value Input Offset Voltage VOS -3.0 1.2 +3.0 mV CS Input Bias Current IBIAS — 0.13 1 µA CS Amplifier PSRR PSRR — 65 — dB VIN = 3.0V to 5.0V, VCM = 0.12V, GAIN = 10 Closed-loop Voltage Gain A2VCL — 10 — V/V RL = 5 kΩ to VIN/2, 100 mV < VOUT < VIN - 100 mV, VCM = +0.12V VOL 5 11 GND + 50 mV RL = 5 kΩ to VIN/2 Low-level Output Gain Bandwidth Product Error Amplifier Sink Current Error Amplifier Source Current Current Sense (CS) Amplifier (A2) Low-level Output ISINK 5 17.7 — mA ISOURCE -5 -19.5 — mA Input Offset Voltage VOS -5 0.9 +5 mV VS Input Bias Current IBIAS — 0.001 1 µA CS Sink Current CS Amplifier Source Current Voltage Sense (VS) Amplifier (A3) Note 1: 2: 3: 4: 5: External Oscillator Input (OSCIN) rise and fall times between 10 ns and 10 µs were determined during device characterization testing. Signal levels between 0.8V and 2.0V with rise and fall times measured between 10% and 90% of maximum and minimum values. Not production tested. Additional timing specifications were fully characterized and specified that are not production tested. The minimum VIN must meet two conditions: VIN ≥ 3.5V and VIN ≥ (VOUT(MAX) + VDROPOUT(MAX)). TCVOUT = (VOUT-HIGH - VOUT-LOW) *106 / (VR * ΔTemperature), VOUT-HIGH = highest voltage measured over the temperature range. VOUT-LOW = lowest voltage measured over the temperature range. Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output voltage due to heating effects are determined using thermal regulation specification TCVOUT. Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its measured value with an applied input voltage of VOUT(MAX) + VDROPOUT(MAX) or 3.5V, whichever is greater. DS22063B-page 6 © 2008 Microchip Technology Inc. MCP1631/HV/MCP1631V/VHV DC CHARACTERISTICS (CONTINUED) Electrical Specifications: Unless otherwise noted, VIN = 3.0V to 5.5V, FOSC = 1 MHz with 10% Duty Cycle, CIN = 0.1 µF, VDD for typical values = 5.0V, TA for typical values = +25°C, TA = -40°C to +125°C for all minimum and maximums. Parameters Min Typ PSRR — VCM GND A3VCL Low-level Output VS Amplifier Sink Current VS Amplifier PSRR Sym Max Units 65 — dB VIN = 3.0V to 5.0V, VCM = 1.2V — AVDD V Rail to Rail Input — 1 — V/V RL = 5 kΩ to VIN/2, 100 mV < VEAOUT < VIN - 100 mV, VCM = 1.2V VOL — 38 GND + 85 mV RL = 5 kΩ to VIN/2 ISINK 1 5 — mA ISOURCE -2 -5 — mA VCS_MAX 0.85 0.9 0.98 V VRAMP 2.7 2.78 2.9 V VIN > 4V Maximum CS input range limited by comparator input common mode range. VCS_MAX = VIN-1.4V ICS_B — -0.1 — µA VIN = 5V TCS_VEXT — 8.5 25 ns Note 1 DCMIN — — 0 % VFB = VREF + 0.1V, VCS = GND V Common Mode Input Range Closed-loop Voltage Gain VS Amplifier Source Current Conditions Peak Current Sense Input (C1) Maximum Current Sense Signal MCP1631/MCP1631HV Maximum Ramp Signal MCP1631V/MCP1631VHV Current Sense Input Bias Current Delay From CS to VEXT MCP1631 Minimum Duty Cycle Overvoltage Sense Comparator (C2) OV Reference Voltage High OV_VREF_H — 1.23 — OV Reference Voltage Low OV_VREF_L 1.15 1.18 1.23 V OV_HYS — 50 — mV OV_IN Bias Current OV_IBIAS — 0.001 1 µA Delay From OV to VEXT TOV_VEXT — 63 150 ns C_OV — 5 — pF OV Hysteresis OV Input Capacitance Overvoltage Comparator Hysteresis Delay from OV detection to PWM termination (Note 1) Internal Regulator HV Options Input / Output Characteristics VIN 3.5 — 16.0 V Maximum Output Current IOUT_mA 250 — — mA Output Short Circuit Current IOUT_SC — 400 — mA VOUT VR-3.0% VR±0.4% VR+3.0% V TCVOUT — 50 150 ppm/ °C Input Operating Voltage Output Voltage Regulation VOUT Temperature Coefficient Note 1: 2: 3: 4: 5: Note 2 VIN = VIN(MIN) (Note 2), VOUT = GND, Current (average current) measured 10 ms after short is applied. VR = 3.3V or 5.0V Note 3 External Oscillator Input (OSCIN) rise and fall times between 10 ns and 10 µs were determined during device characterization testing. Signal levels between 0.8V and 2.0V with rise and fall times measured between 10% and 90% of maximum and minimum values. Not production tested. Additional timing specifications were fully characterized and specified that are not production tested. The minimum VIN must meet two conditions: VIN ≥ 3.5V and VIN ≥ (VOUT(MAX) + VDROPOUT(MAX)). TCVOUT = (VOUT-HIGH - VOUT-LOW) *106 / (VR * ΔTemperature), VOUT-HIGH = highest voltage measured over the temperature range. VOUT-LOW = lowest voltage measured over the temperature range. Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output voltage due to heating effects are determined using thermal regulation specification TCVOUT. Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its measured value with an applied input voltage of VOUT(MAX) + VDROPOUT(MAX) or 3.5V, whichever is greater. © 2008 Microchip Technology Inc. DS22063B-page 7 MCP1631/HV/MCP1631V/VHV DC CHARACTERISTICS (CONTINUED) Electrical Specifications: Unless otherwise noted, VIN = 3.0V to 5.5V, FOSC = 1 MHz with 10% Duty Cycle, CIN = 0.1 µF, VDD for typical values = 5.0V, TA for typical values = +25°C, TA = -40°C to +125°C for all minimum and maximums. Parameters Sym Min Typ Max Units Conditions Line Regulation ΔVOUT/ (VOUTXΔ VIN) -0.3 ±0.1 +0.3 %/V (VOUT(MAX) + VDROPOUT(MAX)) ≤ VIN ≤ 16V Note 2 Load Regulation ΔVOUT/ VOUT -2.5 ±1.0 +2.5 % Dropout Voltage Note 2, Note 5 VDROPOUT — 330 650 mV IL = 250 mA, VR = 5.0V — 525 725 mV IL = 250 mA, VR = 3.3V TDELAY — 1000 — µs VIN = 0V to 6V, VOUT = 90% VR, RL = 50Ω resistive eN — 8 — PSRR — 44 — dB TSHD — 150 — °C TSHD_HYS — 18 — °C Output Delay Time Output Noise Power Supply Ripple Rejection Ratio IL = 1.0 mA to 250 mA, Note 4 µV/ IL = 50 mA, f = 1 kHz, COUT = (Hz)1/2 1 µF f = 100 Hz, COUT = 1 µF, IL = 100 µA, VINAC =100 mV pk-pk, CIN = 0 µF, VR = 1.2V Protection Features Thermal Shutdown Thermal Shutdown Hysteresis Note 1: 2: 3: 4: 5: External Oscillator Input (OSCIN) rise and fall times between 10 ns and 10 µs were determined during device characterization testing. Signal levels between 0.8V and 2.0V with rise and fall times measured between 10% and 90% of maximum and minimum values. Not production tested. Additional timing specifications were fully characterized and specified that are not production tested. The minimum VIN must meet two conditions: VIN ≥ 3.5V and VIN ≥ (VOUT(MAX) + VDROPOUT(MAX)). TCVOUT = (VOUT-HIGH - VOUT-LOW) *106 / (VR * ΔTemperature), VOUT-HIGH = highest voltage measured over the temperature range. VOUT-LOW = lowest voltage measured over the temperature range. Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output voltage due to heating effects are determined using thermal regulation specification TCVOUT. Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its measured value with an applied input voltage of VOUT(MAX) + VDROPOUT(MAX) or 3.5V, whichever is greater. TEMPERATURE SPECIFICATIONS Electrical Specifications: Unless otherwise indicated, all limits are specified for: VIN + 3.0V to 5.5V Parameters Sym Min Typ Max Units Conditions Operating Junction Temperature Range TJ -40 — +125 °C Storage Temperature Range TA -65 — +150 °C Maximum Junction Temperature TJ — — +150 °C Thermal Resistance, 20L-TSSOP θJA — 90 — °C/W Typical 4 Layer board with interconnecting vias Thermal Resistance, 20L-SSOP θJA — 89.3 — °C/W Typical 4 Layer board with interconnecting vias Thermal Resistance, 20L-QFN θJA — 43 — °C/W Typical 4 Layer board with interconnecting vias Temperature Ranges Steady State Transient Package Thermal Resistances DS22063B-page 8 © 2008 Microchip Technology Inc. MCP1631/HV/MCP1631V/VHV 2.0 TYPICAL PERFORMANCE CURVES Note: The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. Note: Unless otherwise noted, VIN = 3.0V to 5.5V, FOSC = 1 MHz with 10% Duty Cycle, CIN = 0.1 µF, VIN for typical values = 5.0V, TA for typical values = +25°C. FIGURE 2-5: vs. Temperature. Ambient Temperature (°C) FIGURE 2-3: Temperature. Input Quiescent Current vs. © 2008 Microchip Technology Inc. 110 125 125 110 95 80 65 VDD = +3.0V 50 125 110 95 80 65 50 35 5 20 -10 -25 2.80 VDD = +3.3V 35 3.00 VDD = +4.0V 20 VDD = +3.0V VDD = +5.5V -10 3.20 Oscillator Input Threshold VDD = +5.0V -25 VDD = +4.0V 1.70 1.60 1.50 1.40 1.30 1.20 1.10 1.00 0.90 0.80 -40 OSC_DIS Input Threshold Voltage (V) VDD = +5.5V VDD = +3.3V -40 Input Quiescent Current (mA) 4.00 3.40 95 -40 Ambient Temperature (°C) FIGURE 2-2: Undervoltage Lockout Hysteresis vs. Temperature. 3.60 80 1.00 Ambient Temperature (°C) VDD = +5.0V 125 VDD = +3.0V 1.10 125 110 95 80 65 50 35 20 5 -10 -25 -40 0.061 1.20 65 0.062 VDD = +4.0V VDD = +3.3V 50 0.063 1.30 35 0.064 VDD = +5.0V 1.40 5 0.065 VDD = +5.5V 1.50 20 0.066 1.60 -10 OSC_IN Input Threshold (V) 0.067 UVLO Hyst (V) FIGURE 2-4: Shutdown Current vs. Temperature (MCP1631/MCP1631V). -25 Undervoltage Lockout vs. 0.068 3.80 110 Ambient Temperature (°C) Ambient Temperature (°C) FIGURE 2-1: Temperature. 95 -40 125 110 95 80 65 50 35 5 20 -10 -25 2.8 VDD = +3.3V 80 Device Turn Off 2.81 VDD = +3.0V VDD = +4.0V 5 2.82 65 2.83 50 2.84 35 2.85 VDD = +5.0V 5 2.86 VDD = +5.5V 20 2.87 4.00 3.70 3.40 3.10 2.80 2.50 2.20 1.90 1.60 1.30 1.00 -10 Shutdown Current (µA) Device Turn On -25 2.88 -40 Undervoltage Lockout (V) 2.89 Ambient Temperature (°C) FIGURE 2-6: Oscillator Disable Input Threshold vs. Temperature. DS22063B-page 9 MCP1631/HV/MCP1631V/VHV Typical Performance Curves (Continued) Note: Unless otherwise noted, VIN = 3.0V to 5.5V, FOSC = 1 MHz with 10% Duty Cycle, CIN = 0.1 µF, VIN for typical values = 5.0V, TA for typical values = +25°C. FIGURE 2-10: Temperature. A1 Offset Voltage (mV) -0.60 -0.65 125 95 VDD = +3.0V -0.70 VDD = +3.3V -0.75 VDD = +4.0V 125 95 110 80 65 50 35 20 -40 5 -0.80 125 95 110 VDD = +4.0V 80 65 50 35 20 5 -10 -25 VDD = +5.5V VDD = +5.0V VDD = +5.0V VDD = +5.5V -10 VDD = +3.0V -0.55 -25 VDD = +3.3V Ambient Temperature (°C) Ambient Temperature (°C) FIGURE 2-8: VEXT N-Channel Driver RDSON vs. Temperature. FIGURE 2-11: vs. Temperature. Amplifier A1 Offset Voltage 40 CL = 100 pF 35 A1 V OUT Low (mV) VDD = +3.3V VDD = +3.0V VDD = +4.0V VDD = +5.5V VDD = +5.0V VDD = +5.5V 30 25 VDD = +5.0V 20 VDD = +4.0V 15 10 VDD = +3.3V 5 VDD = +3.0V FIGURE 2-9: Temperature. DS22063B-page 10 VEXT Rise Time vs. 125 110 95 80 65 50 35 5 20 -10 -25 -40 125 95 Ambient Temperature (°C) 110 80 65 50 35 20 5 -10 -25 0 -40 VEXT Rise Time (ns) 110 VEXT Fall Time vs. -0.50 -40 EXT Output N-Channel RDSON (ohms) FIGURE 2-7: VEXT P-Channel Driver RDSON vs. Temperature. 4.7 4.4 4.1 3.8 3.5 3.2 2.9 2.6 2.3 2.0 80 Ambient Temperature (°C) Ambient Temperature (°C) 6.6 6.2 5.8 5.4 5.0 4.6 4.2 3.8 3.4 3.0 65 VDD = +5.5V -40 125 95 110 80 65 50 35 20 5 -10 -25 -40 4 VDD = +5.0V 50 VDD = +5.5V VDD = +4.0V VDD = +5.0V VDD = +4.0V 35 6 VDD = +3.0V 5 8 VDD = +3.3V 20 VDD = +3.0V 10 CL = 100 pF -10 VDD = +3.3V 5.0 4.7 4.4 4.1 3.8 3.5 3.2 2.9 2.6 2.3 2.0 -25 12 VEXT Fall Time (ns) EXT Output P-Channel R (ohms) DSON 14 Ambient Temperature (°C) FIGURE 2-12: Amplifier A1 Output Voltage Low vs. Temperature. © 2008 Microchip Technology Inc. MCP1631/HV/MCP1631V/VHV Typical Performance Curves (Continued) 18.8 17.6 16.4 15.2 14.0 12.8 11.6 10.4 9.2 8.0 18 VDD = +3.3V FIGURE 2-13: vs. Temperature. Amplifier A1 Sink Current 35 FIGURE 2-16: Amplifier A2 Output Voltage Low vs. Temperature. 40 VDD = +5.5V Amplifier A1 Source Current 1.6 A2 Source Current (mA) 1.4 1.2 VDD = +5.0V VDD = +4.0V 0.8 VDD = +3.3V 0.6 FIGURE 2-17: vs. Temperature. 125 Amplifier A2 Sink Current 26 VDD = +5.5V 1.0 110 -40 Ambient Temperature (°C) Ambient Temperature (°C) FIGURE 2-14: vs. Temperature. 95 10 125 110 95 80 65 50 35 5 20 -10 -25 -40 5.0 VDD = +5.0V 15 80 VDD = +3.0V VDD = +4.0V 20 65 VDD = +3.3V 6.5 25 50 8.0 VDD = +3.0V 35 VDD = +5.5V 9.5 VDD = +3.3V 30 20 11.0 35 5 VDD = +4.0V -10 12.5 -25 VDD = +5.0V A2 Sink Current (mA) VDD = +3.0V 22 VDD = +3.3V 20 VDD = +5.0V 18 16 VDD = +5.5V 14 VDD = +3.0V 12 Ambient Temperature (°C) FIGURE 2-15: vs. Temperature. Amplifier A2 Offset Voltage © 2008 Microchip Technology Inc. 125 95 110 80 65 50 35 5 -10 -25 -40 125 110 95 80 65 50 35 20 5 -10 -25 10 -40 0.4 24 20 A1 Source Current (mA) 20 Ambient Temperature (°C) 14.0 A2 Offset Voltage (mV) 5 -10 -25 -40 Ambient Temperature (°C) 125 VDD = +3.0V 4 125 110 6 95 80 65 50 35 5 20 -10 -25 VDD = +5.5V VDD = +4.0V 8 110 VDD = +5.0V VDD = +5.0V 10 80 VDD = +4.0V 12 65 VDD = +3.3V VDD = +5.5V 14 50 VDD = +3.0V 95 A2 V OUT Low (mV) 16 -40 A1 Sink Current (mA) Note: Unless otherwise noted, VIN = 3.0V to 5.5V, FOSC = 1 MHz with 10% Duty Cycle, CIN = 0.1 µF, VIN for typical values = 5.0V, TA for typical values = +25°C. Ambient Temperature (°C) FIGURE 2-18: vs. Temperature. Amplifier A2 Source Current DS22063B-page 11 MCP1631/HV/MCP1631V/VHV Typical Performance Curves (Continued) Note: Unless otherwise noted, VIN = 3.0V to 5.5V, FOSC = 1 MHz with 10% Duty Cycle, CIN = 0.1 µF, VIN for typical values = 5.0V, TA for typical values = +25°C. 7.0 A3 Source Current (mA) VDD = +3.0V 4.5 VDD = +3.3V 4.0 Ambient Temperature (°C) Ambient Temperature (°C) DS22063B-page 12 Amplifier A3 Sink Current 125 95 80 65 35 50 125 110 95 65 50 80 125 110 95 80 125 95 110 80 65 50 35 20 5 -10 -25 -40 2.8 65 3.3 50 3.8 35 4.3 20 VDD = +3.0V to +5.5V VDD = +5.0V -25 5.8 2.790 2.788 2.786 2.784 2.782 2.780 2.778 2.776 2.774 2.772 2.770 -40 6.3 FIGURE 2-21: vs. Temperature. FIGURE 2-23: MCP1631 and MCP1631HV CS Maximum Voltage (V) vs. Temperature. MCP1631V V RAMP Maximum Voltage (V) A3 Sink Current (mA) 6.8 4.8 5 Ambient Temperature (°C) FIGURE 2-20: Amplifier A3 Output Voltage Low vs. Temperature. 5.3 VDD = +3.0V VDD = +3.3V -40 125 110 95 80 65 50 35 20 5 -10 -25 -40 0 35 VDD = +3.3V VDD = +3.0V 10 VDD = +5.0V VDD = +4.0V 20 30 VDD = +5.5V 5 40 Amplifier A3 Source Current -10 VDD = +5.0V VDD = +4.0V 0.920 0.918 0.916 0.914 0.912 0.910 0.908 0.906 0.904 0.902 0.900 -25 VDD = +5.5V 20 FIGURE 2-22: vs. Temperature. CS Max Threshold Voltage (V) A3 V OUT Low (mV) 70 50 20 Ambient Temperature (°C) Amplifier A3 Offset Voltage 60 110 Ambient Temperature (°C) FIGURE 2-19: vs. Temperature. VDD = +4.0V 3.5 3.0 125 95 65 50 35 20 5 -40 0 -10 VDD = +3.0V 110 VDD = +3.3V VDD = +5.5V 5.0 5 0.5 80 1 5.5 -10 VDD = +5.0V VDD = +4.0V VDD = +5.0V 6.0 -10 1.5 6.5 -25 VDD = +5.5V -40 2 -25 A3 Offset Voltage (mV) 2.5 Ambient Temperature (°C) FIGURE 2-24: MCP1631V and MCP1631VHV VRAMP Max Voltage (V). © 2008 Microchip Technology Inc. MCP1631/HV/MCP1631V/VHV Typical Performance Curves (Continued) Note: Unless otherwise noted, VIN = 3.0V to 5.5V, FOSC = 1 MHz with 10% Duty Cycle, CIN = 0.1 µF, VIN for typical values = 5.0V, TA for typical values = +25°C. 1.7 0.9 VDD = +3.0V Ambient Temperature (°C) Ambinet Temperature (°C) HV LDO Quiescent Current (µA) FIGURE 2-28: Shutdown Input Voltage Threshold (V) vs. Temperature. VDD = +3.0V VDD = +3.3V VDD = +4.0V 6.00 5.00 VOUT = 5.0V IOUT = 0 µA 0°C 4.00 +25°C +90°C 2.00 1.00 6 8 10 HV LDO Quiescent Current (µA) VDD = +5.5V VDD = +3.3V 0.060 0.050 0.040 VDD = +4.0V 0.030 VDD = +3.0V 0.020 VDD = +5.0V 0.010 Ambient Temperature (°C) FIGURE 2-27: Overvoltage Threshold Hysteresis (V) vs. Temperature. © 2008 Microchip Technology Inc. 125 110 95 80 65 50 35 20 5 -10 -25 0.000 -40 OV Threshold Hysteresis (V) FIGURE 2-29: Input Voltage. 0.080 0.070 12 14 16 18 Input Voltage (V) Ambient Temperature (°C) FIGURE 2-26: Overvoltage Threshold Low (V) vs. Temperature. -45°C +130°C 3.00 125 110 95 65 50 35 20 5 -10 -25 80 VDD = +5.5V VDD = +5.0V -40 OV Threshold Low (V) FIGURE 2-25: Overvoltage Threshold High (V) vs. Temperature. 1.187 1.187 1.186 1.186 1.185 1.185 1.184 1.184 1.183 1.183 1.182 125 0.8 110 125 110 95 80 65 50 35 5 20 -10 -25 -40 VDD = +3.3V 1.0 95 VDD = +3.0V 1.2 1.1 80 1.21 VDD = +4.0V 1.2 65 VDD = +3.3V 1.22 VDD = +5.0V 1.3 50 1.23 1.4 35 1.24 1.5 5 1.25 VDD = +5.5V 1.6 20 VDD = +4.0V VDD = +5.0V -40 1.26 -10 VDD = +5.5V -25 Shutdown Input Threshold Voltage (V) OV Threshold High (V) 1.27 LDO Quiescent Current vs. 3.00 IOUT = 0mA VOUT = 1.2V VIN = 2.7V VOUT = 2.5V VIN = 3.5V 2.50 2.00 1.50 1.00 VOUT = 5.0V VIN = 6.0V 0.50 0.00 -45 -20 5 30 55 80 105 130 Junction Temperature (°C) FIGURE 2-30: LDO Quiescent Current vs. Junction Temperature. DS22063B-page 13 MCP1631/HV/MCP1631V/VHV Typical Performance Curves (Continued) Note: Unless otherwise noted, VIN = 3.0V to 5.5V, FOSC = 1 MHz with 10% Duty Cycle, CIN = 0.1 µF, VIN for typical values = 5.0V, TA for typical values = +25°C. 5.04 VIN = 6V VOUT = 5.0V +90°C +130°C 5.02 5.00 4.98 4.96 0°C -45°C +25°C 4.94 0.18 Line Regulation (%/V) Output Voltage (V) 5.06 4.92 0.16 VOUT = 5.0V VIN = 6.0V to 16.0V 0.14 200 mA 250 mA 0.12 0.10 0 mA 100 mA 0.08 0.06 0 50 100 150 200 250 -45 -20 Load Current (mA) 0.50 0.45 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0.00 LDO Output Voltage vs. +130°C -30 -40 VR=5.0V VIN=6.0V VINAC = 100 mV p-p CIN=0 μF IOUT=100 µA -50 -60 -80 -90 0.01 75 100 125 150 175 200 225 250 Load Current (mA) LDO Dropout Voltage vs. VIN = 6V 0.40 VIN = 12V 0.20 VIN = 8V -0.20 0.1 FIGURE 2-35: 1 10 Frequency (kHz) 100 1000 LDO PSRR vs. Frequency. 100 VOUT = 5.0V IOUT = 1 to 250 mA VIN = 16V 0.60 130 LDO Line Regulation vs. -70 -45°C 1.00 Load Regulation (%) PSRR (dB) +0°C 0.80 105 -20 +25°C 50 80 -10 +90°C 25 55 0 FIGURE 2-32: Load Current. 0.00 FIGURE 2-34: Temperature. VOUT = 5.0V 0 30 Temperature (°C) VR = 5.0V, VIN = 6.0V Noise (µV/ √Hz) Dropout Voltage (V) FIGURE 2-31: Load Current. 5 IOUT = 50 mA 10 1 0.1 0.01 VIN = 14V -0.40 -45 -20 5 30 55 80 105 130 0.001 0.01 Temperature (°C) FIGURE 2-33: Temperature. DS22063B-page 14 LDO Load Regulation vs. FIGURE 2-36: Frequency. 0.1 1 10 Frequency (kHz) 100 1000 LDO Output Noise vs. © 2008 Microchip Technology Inc. MCP1631/HV/MCP1631V/VHV 3.0 PIN DESCRIPTIONS The descriptions of the pins are listed in Table 3-1. TABLE 3-1: PIN FUNCTION TABLE MCP1631/MCP1631V MCP1631HV/ MCP1631VHV TSSOP/SSOP 4x4 QFN TSSOP/SSOP 1 15 1 2 16 3 17 4 3.1 Sym PGND Power ground return 2 SHDN Shutdown input 3 OSCIN External oscillator input 18 4 OSCDIS Oscillator disable input 5 19 5 OVIN Overvoltage comparator input 6 20 6 VREF External voltage reference input 7 1 7 AGND Quiet or analog ground 8,9,10 2,4,12 8,9 NC No connection — — 10 VIN High voltage input 11 3 — AVDD_IN — — 11 5 12 AVDD_OUT Regulated VDD output VSIN Voltage sense amplifier (A3) input 13 6 13 ISIN 14 7 14 VSOUT 15 8 15 ISOUT Current sense amplifier output 16 9 16 COMP Error amplifier (A1) output 17 10 17 18 11 18 19 13 19 PVDD 20 14 20 VEXT — 21 — EP FB Power Ground (PGND) Shutdown Input (SHDN) Oscillator Input (OSCIN) External Oscillator Input, used to set power train switching frequency and maximum duty cycle, VEXT enabled while low and disabled while high. © 2008 Microchip Technology Inc. Current sense input Voltage sense amplifier output Error amplifier inverting input (A1) CS/VRAMP CS - current sense input; VRAMP voltage ramp input Shutdown input logic low disables device and lowers IQ to minimum value, amplifier A3 (VS) remains functional for battery voltage sense applications. 3.3 Analog bias voltage input 12 Connect power ground return pin to power ground plane, high peak current flows through the PGND during the turn on and turn off the external MOSFET devices. 3.2 Description Power VDD input External driver output Exposed Thermal Pad (EP); must be connected to AGND 3.4 Oscillator Disable (OSCDIS) Oscillator disable input, used to asycnronously terminate the VEXT duty cycle. Commonly used to modulate current for LED driver applications.For minimum shutdown IQ, connect OSCDIS to SHDN. 3.5 Overvoltage Input (OVIN) Overvoltage Comparator input, connect to voltage divider, internal comparator terminates VEXT output in 50 ns to limit output voltage to predetermined value. 3.6 External Reference Voltage Input (VREF) External Voltage Reference input, connect fixed or variable external reference to VREF, with A1 configured as an error amplifier, the power supply output variable (voltage or current) will follow this input. DS22063B-page 15 MCP1631/HV/MCP1631V/VHV 3.7 Analog Ground (AGND) 3.15 Current Sense Output (ISOUT) Quiet or analog ground, connect to analog ground plane to minimize noise on sensitive MCP1631 circuitry. Current sense amplifier output, connect to error amplifier (A1) inverting input (FB) to regulate SEPIC output current. 3.8 3.16 No Connection (NC) No connection. 3.9 Input Voltage (VIN) High voltage input for MCP1631HV/MCP1631VHV devices, operates from 3.5V to 16V input supply. 3.10 Analog supply Input (AVDD_IN) Analog bias input, minimum 3.0V to 5.5V operation for MCP1631/MCP1631V devices. 3.11 Analog Supply Output (AVDD_OUT) Regulated VDD output used to power internal MCP1631HV/MCP1631VHV and external microcontroller, supplies up to 250 ma of bias current at 3.3V or 5.0V regulated low drop out rail. 3.12 Voltage Sense Input (VSIN) Voltage sense amplifier (A3) input, connect to high impedance battery voltage resistor divider to sense battery voltage with minimal loading. 3.13 Current Sense Input (ISIN) Connect to SEPIC secondary side sense resistor to develop a regulated current source used to charge multi-chemistry batteries. 3.14 Voltage Sense Output (VSOUT) Voltage sense amplifier output, connect to microcontroller analog to digital converter to measure battery voltage. DS22063B-page 16 Error Amplifier Output (COMP) Error amplifier (A1) output, connect control loop compensation from FB input to COMP output pin. 3.17 Feedback (FB) Error amplifier input (A1), connect to current sense output amplifier (A2) to regulate current. 3.18 Current Sense or Voltage Ramp (CS/VRAMP) For MCP1631/MCP1631HV applications, connect to low side current sense of SEPIC switch for current mode control and peak current limit. For MCP1631/ MCP1631HV application, connect artificial ramp voltage to VRAMP input for voltage mode PWM control. 3.19 Power VDD (PVDD) Power VDD input, VEXT gate drive supply input, connect to +5.0V or +3.3V supply for driving external MOSFET. 3.20 External Driver (VEXT) High current driver output used to drive external MOSFET at high frequency, capable of 1A peak currents with +5.0V PVDD. 3.21 Exposed PAD 4x4 QFN (EP) There is an internal electrical connection between the Exposed Thermal Pad (EP) and the AGND pin; they must be connected to the same potential on the Printed Circuit Board (PCB). © 2008 Microchip Technology Inc. MCP1631/HV/MCP1631V/VHV 4.0 DETAILED DESCRIPTION 4.1 Device Overview The MCP1631/MCP1631V device family combines the analog functions to develop high frequency switch mode power systems while integrating features for battery charger and LED current source applications. With the integration of a MOSFET driver, voltage sense, current sense and over voltage protection, the MCP1631/MCP1631V is a highly integrated, highspeed analog pulse width modulator. The MCP1631/MCP1631V output (VEXT) is used to control the switch of the power system (on and off time). By controlling the switch on and off time, the power system output can be regulated. With the oscillator and reference voltage as inputs, a simple interface to a microcontroller is available with the MCP1631/MCP1631V to develop intelligent power systems. A good example of an intelligent power system is a battery charger, programmable LED driver current source or programmable power supply. The MCP1631/MCP1631V is a combination of specialty analog blocks consisting of a Pulse Width Modulator (PWM), MOSFET Driver, Current Sense Amplifier (A2), Voltage Sense Amplifier (A3), Overvoltage Comparator (C2) and additional features (Shutdown, Undervoltage Lockout, Overtemperature Protection). For the HV options, an internal low dropout regulator is integrated for operation from high voltage inputs (MCP1631HV/MCP1631VHV). 4.2 Pulse Width Modulator (PWM) The internal PWM of the MCP1631/MCP1631V is comprised of an error amplifier, high-speed comparator and latch. The output of the amplifier is compared to either the MCP1631 CS (primary current sense input) or the MCP1631V VRAMP (voltage mode ramp input) of the high speed comparator. When the CS or VRAMP signal reach the level of the error amplifier output, the on cycle is terminated and the external switch is latched off until the beginning of the next cycle (high to low transition of OSCIN). 4.3 VEXT MOSFET Driver The MCP1631/MCP1631V output can be used to drive the external MOSFET directly for low side topology applications. The VEXT is capable of sourcing up to 700 mA and sinking up to 1A of current from a PVDD source of 5V. Typical output power using the VEXT output to directly drive the external MOSFET can exceed 50W depending upon application and switching frequency. © 2008 Microchip Technology Inc. 4.4 Current Sense Amplifier (A2) The A2 current sense amplifier is used to sense current in the secondary side of a SEPIC converter or freewheeling current in a Buck converter. The inverting amplifier has a built in voltage gain of ten with low offset and high speed. 4.5 Voltage Sense Amplifier (A3) The A3 voltage sense amplifier is used to sense battery voltage. In battery powered applications, it is important to minimize the steady stage load current draw on the battery. The voltage sense amplifier (A3) is used to buffer a high impedance series divider used to reduce the battery pack voltage to a level that can be read using an analog to digital converter. The voltage sense amplifier draws a very low quiescent current and remains functional when the MCP1631/MCP1631V is shutdown making it possible to read battery voltage without turning on the charger. 4.6 Overvoltage Comparator(C2) The C2 overvoltage comparator is used to prevent the power system from being damaged when the load (battery) is disconnected. By comparing the divided down power train output voltage with a 1.2V internal reference voltage, the MCP1631/MCP1631V VEXT output switching is interrupted when the output voltage is above a pre-set value. This limits the output voltage of the power train, the 0V comparator’s hysteresis will operate as a ripple regulator. 4.7 Shutdown Input The MCP1631/MCP1631V shutdown feature is used to disable the device with the exception of the voltage sense amplifier A3 to minimize quiescent current draw. While shutdown, A3 remains operational while the device draws 4.4 µA from the input. 4.8 Protection The MCP1631/MCP1631V has built in Undervoltage Lockout (UVLO) that ensures the output VEXT pin is forced to a known state (low) when the input voltage or AVDD is below the specified value. This prevents the main MOSFET switch from being turned on during a power up or down sequence. The MCP1631/MCP1631V provides a thermal shutdown protection feature, if the internal junction temperature of the device becomes high, the overtemperature protection feature will disable (pull the VEXT output low) and shut down the power train. DS22063B-page 17 MCP1631/HV/MCP1631V/VHV NOTES: DS22063B-page 18 © 2008 Microchip Technology Inc. MCP1631/HV/MCP1631V/VHV 5.0 APPLICATION INFORMATION 5.1 Typical Applications The MCP1631/MCP1631V can be used to develop intelligent power management solutions, typical applications include a multi-chemistry battery charger used to charge Li-Ion, NiMH or NiCd batteries and constant current LED drivers. 5.2 Battery Charger Design Overview The design approach for developing high current switching battery chargers using the MCP1631 is described in this section. Depending on input voltage range, there are two versions of the device that can be used to accommodate a very wide range of input voltages. For a regulated input voltage range of 5V, the MCP1631/MCP1631V device is used, for this input voltage application (regulated ac-dc converter or USB input), the MCP1631/MCP1631V is powered directly from the 5V dc input. For input voltages to +16V steady state with +18V transients, the MCP1631HV/MCP1631VHV, or high voltage option can be used. The high voltage devices integrate a low dropout (LDO) linear regulator with a set output voltage of +3.3V or +5.0V that internally powers the MCP1631HV/MCP1631VHV and is also capable of providing 250 mA of bias current for the attached microcontroller and other circuitry. MCP1631HV/ MCP1631VHV internal power dissipation must be considered when loading the internal LDO regulator. For higher input voltages the MCP1631/MCP1631V can be biased from an external regulated +3.0V to +5.5V supply. 5.3 Programmable Single Ended Primary Inductive (SEPIC) Current Source The MCP1631/MCP1631V family integrates features that are necessary to develop programmable current sources. The SEPIC converter is commonly used in battery charger applications. The primary or input inductor is used to filter input current and minimize the switching noise at the converter input. The primary to secondary capacitive isolation blocks any dc path from input to output making the SEPIC safer than Buck or other non-isolated topologies. The SEPIC rectifier blocks the reverse path preventing battery leakage, in other topologies an additional diode for blocking is necessary adding additional components and efficiency loss. The input or primary inductor and output or secondary inductor are typically constructed from a single magnetic device with two windings, this is commonly referred to as a coupled inductor. Using coupled © 2008 Microchip Technology Inc. inductors has significant advantages in addition to the size and cost benefits of a single core with multiple windings. 5.4 Mixed Signal Design For intelligent battery charger design, a microcontroller is used to generate the proper charge profile, charge termination, safety timers and battery charger features. When using the MCP1631/MCP1631V for Li-Ion battery charger applications, the microcontroller is also used to generate the constant voltage regulation phase of the charge cycle. This is accomplished by using the external reference feature of the MCP1631/MCP1631V as a programmable current source. The microcontroller is used to vary the VREF input of the MCP1631/ MCP1631V. The charge current into the battery is regulated by the MCP1631/MCP1631V, the level that it is regulated to is set by the programmability of the microcontroller. The internal MCP1631/MCP1631V analog components are used to regulate the microcontroller programmed current. The secondary or battery current is sensed using amplifier A2, the output of A2 is feed into the input of the error amplifier A1, the output of A1 sets the peak switch current of the SEPIC converter, it increases or decreases the battery current to match its (A1) inputs. By increasing the VREF or non-inverting input of A1, the battery current is increased. 5.5 Safety Features The MCP1631/MCP1631V integrates a high-speed comparator used to protect the charger and battery from being exposed to high voltages if the battery is removed or opens. Comparator C2 is used to sense the SEPIC output voltage. If the divided down output voltage becomes higher than the 1.2V internal MCP1631/MCP1631V reference, the VEXT PWM output is terminated within 50 ns preventing the build up of voltage on the SEPIC output. Peak switch current is limited by the MCP1631/ MCP1631V comparator C1 and error amplifier A1 output voltage clamp. For the MCP1631, the error amplifier output is clamped at 2.7V. The A1 output is divided down by 1/3 and compared with CS (current sense) input. The VEXT output is turned off if the CS input reaches a level of 1/3 of 2.7V or 0.9V in 12 ns, preventing the external switch current from becoming high enough to damage the SEPIC power train. Internal overtemperature protection limits the device junction temperature to 150°C preventing catastrophic failure for overtemperature conditions. Once the temperature decreases 10°C, the device will resume normal operation. Safety timers are typically used to limit the amount of energy into a faulted battery or pack. This is accomplished using the microcontroller and MCP1631/ MCP1631V shutdown feature. DS22063B-page 19 MCP1631/HV/MCP1631V/VHV 5.6 OSC Disable Feature The oscillator disable or OSC_DIS input is used to asychronously terminate the PWM VEXT output. This can be used with a slow PWM input to modulate current into an LED for lighting applications. Multi-cell Multi-Chemistry Charger VIN Range +4.5V to +5.5V L1A CC SCHOTTKY DIODE COUT CIN L1B MCP1631 VEXT NC AVDD_IN PVDD RTHERM CS PGND OSCIN ISIN ISOUT OVIN NC VSIN FB VREF NC SHDN COMP OSCDIS AGND VSOUT R C PIC12F683 VDD GP1/C CCP1 GP3 GP4 GP5 GND GP0/C AVDD_OUT LED FIGURE 5-1: DS22063B-page 20 +5V ac-dc or USB Input Application. © 2008 Microchip Technology Inc. MCP1631/HV/MCP1631V/VHV Multi-cell Multi-Chemistry Charger VIN Range +5.5V to +16V L1A CC SCHOTTKY DIODE L1B MCP1631HV VEXT VIN AVDD_OUT PVDD RTHERM COUT CIN CS PGND OSCIN ISIN ISOUT OVIN NC VSIN FB VREF NC SHDN COMP OSCDIS AGND VSOUT R C PIC12F683 VDD GP1/C CCP1 GP3 GP4 GP5 GND GP0/C AVDD_OUT LED FIGURE 5-2: +5.5V to +16.0V Input. © 2008 Microchip Technology Inc. DS22063B-page 21 MCP1631/HV/MCP1631V/VHV Multi-cell Multi-Chemistry Charger VIN Range +6V to +40V CIN +5V L1A HV Regulator CC SCHOTTKY DIODE COUT COUT RTHERM L1B MCP1631 VEXT NC AVDD_IN PVDD CS PGND OSCIN ISIN ISOUT OVIN NC VSIN FB VREF NC SHDN COMP OSCDIS AGND VSOUT R C PIC12F683 VDD GP1/C CCP1 GP3 GP4 GP5 GND GP0/C AVDD_OUT LED FIGURE 5-3: DS22063B-page 22 Wide Range High Voltage Input. © 2008 Microchip Technology Inc. MCP1631/HV/MCP1631V/VHV 6.0 PACKAGING INFORMATION 6.1 Package Marking Information (Not to Scale) 20-Lead 4x4 QFN (MCP1631/MCP1631V) Example: XXXXX XXXXXX XXXXXX YWWNNN 1631 e3 E/ML^^ 0822 256 20-Lead SSOP (All Devices) Example: XXXXXXXXXXX XXXXXXXXXXX YYWWNNN 20-Lead TSSOP (All Devices) Example: XXXXXXXX XXXXXNNN YYWW Legend: XX...X Y YY WW NNN e3 * Note: 1631V e3 EST^^ 0822256 1631HV33 e3 EST^^256 0822 Customer-specific information Year code (last digit of calendar year) Year code (last 2 digits of calendar year) Week code (week of January 1 is week ‘01’) Alphanumeric traceability code Pb-free JEDEC designator for Matte Tin (Sn) This package is Pb-free. The Pb-free JEDEC designator ( e3 ) can be found on the outer packaging for this package. In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for customer-specific information. © 2008 Microchip Technology Inc. DS22063B-page 23 MCP1631/HV/MCP1631V/VHV              % !" #$ 2 %& %! %*" ) '  % *$%  %"% %%133)))&  &3* D D2 EXPOSED PAD e E2 2 E b 2 1 1 K N N NOTE 1 TOP VIEW L BOTTOM VIEW A A1 A3 4% &  5&% 6!&(  $ 55, , 6 6 67 8  %  7 9%  :   %" $$    . 0 %% * + 7 ;"% , ,# "";"% , 7 5%  ,# ""5% ./0 ,2 /0     ""* *   2 % I ? ? . :? 5";"% (  > +:  %   !"#$%! & '(!%&! %( %")%%%"   &   ","  %!"& "$   % !    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