MCP6002-I/MS

MCP6001/1R/1U/2/4 1 MHz, Low-Power Op Amp Features Description • Available in 5-Lead SC-70 and 5-Lead SOT-23 Packages • Gain Bandwidth Product: 1 MHz (typical) • Rail-to-Rail Input/Output • Supply Voltage: 1.8V to 6.0V • Supply Current: IQ = 100 µA (typical) • Phase Margin: 90° (typical) • Temperature Range: - Industrial: -40°C to +85°C - Extended: -40°C to +125°C • Available in Single, Dual and Quad Packages The Microchip Technology Inc. MCP6001/2/4 family of operational amplifiers (op amps) is specifically designed for general purpose applications. This family has a 1 MHz Gain Bandwidth Product (GBWP) and 90° phase margin (typical). It also maintains a 45° phase margin (typical) with a 500 pF capacitive load. This family operates from a single-supply voltage as low as 1.8V, while drawing 100 µA (typical) quiescent current. Additionally, the MCP6001/2/4 supports rail-to-rail input and output swing, with a Common-mode input voltage range of VDD + 300 mV to VSS – 300 mV. This family of op amps is designed with Microchip’s advanced CMOS process. Applications The MCP6001/2/4 family is available in the industrial and extended temperature ranges, with a power supply range of 1.8V to 6.0V. Automotive Portable Equipment Photodiode Amplifier Analog Filters Notebooks and PDAs Battery-Powered Systems Package Types MCP6001R 5-Lead SOT-23 VOUTA 1 + + VIN+ 1 7 VOUTB VSS 2 6 VINB- VIN- 3 5 VDD + – 4 VOUT 5 VINB+ MCP6002 MCP6004 8-Lead 2x3 DFN* 14-Lead PDIP, SOIC, TSSOP VOUTA 1 VINA+ 3 VSS 4 8 VDD EP 9 7 VOUTB VINA- 2 6 VINB5 VINB+ 14 VOUTD VOUTA 1 + + VINA+ 3 VDD 4 11 VSS R1 Gain = 1 + -----R2 Noninverting Amplifier  2002-2020 Microchip Technology Inc. VOUTB 7 + + – 10 VINC+ – VINB- 6 13 VIND12 VIND+ VINB+ 5 R1 VREF 8 VDD – VINA- 2 VINA+ 3 VINA- 2 VSS – MCP6001U 5-Lead SOT-23 – VOUT MCP6001 – 4 VIN- MCP6002 VSS 4 + + VIN+ 3 8-Lead PDIP, SOIC, MSOP VDD R2 4 VIN- – Typical Application + VIN+ 3 5 VSS VOUT 1 VDD 2 – VSS 2 SPICE Macro Models FilterLab® Software Mindi™ Circuit Designer and Analog Simulator Microchip Advanced Part Selector (MAPS) Analog Demonstration and Evaluation Boards Application Notes VIN 5 VDD VOUT 1 Design Aids • • • • • • MCP6001 5-Lead SC70, SOT-23 – • • • • • • 9 VINC8 VOUTC *Includes Exposed Thermal Pad (EP); see Table 3-1. DS20001733L-page 1 MCP6001/1R/1U/2/4 NOTES: DS20001733L-page 2  2002-2020 Microchip Technology Inc. MCP6001/1R/1U/2/4 1.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings† VDD – VSS ........................................................................7.0V Current at Analog Input Pins (VIN+, VIN-)......................±2 mA Analog Inputs (VIN+, VIN-)†† .......... VSS – 1.0V to VDD + 1.0V All Other Inputs and Outputs ......... VSS – 0.3V to VDD + 0.3V Difference Input Voltage ...................................... |VDD – VSS| † Notice: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. †† See Section 4.1.2 “Input Voltage and Current Limits”. Output Short-Circuit Current ................................ Continuous Current at Output and Supply Pins ............................±30 mA Storage Temperature ....................................-65°C to +150°C Maximum Junction Temperature (TJ) ......................... .+150°C ESD Protection On All Pins (HBM; MM)   4 kV; 200V DC ELECTRICAL SPECIFICATIONS Electrical Characteristics: Unless otherwise indicated, TA = +25°C, VDD = +1.8V to +5.5V, VSS = GND, VCM = VDD/2, VL = VDD/2, RL = 10 kto VL and VOUT  VDD/2 (refer to Figure 1-1). Parameters Sym Min Typ Max Units Conditions Input Offset Input Offset Voltage Input Offset Drift with Temperature Power Supply Rejection Ratio VOS -4.5 — +4.5 mV VOS/TA — ±2.0 — µV/°C PSRR — 86 — dB VCM = VSS (Note 1) TA= -40°C to +125°C, VCM = VSS VCM = VSS Input Bias Current and Impedance Input Bias Current: IB — ±1.0 — pA Industrial Temperature IB — 19 — pA TA = +85°C Extended Temperature IB — 1100 — pA TA = +125°C IOS — ±1.0 — pA 13 Input Offset Current Common-Mode Input Impedance ZCM — 10 ||6 — ||pF Differential Input Impedance ZDIFF — 1013||3 — ||pF Common-Mode Input Range VCMR VSS –0.3 — VDD + 0.3 V Common-Mode Rejection Ratio CMRR 60 76 — dB VCM = -0.3V to 5.3V, VDD = 5V AOL 88 112 — dB VOUT = 0.3V to VDD – 0.3V, VCM = VSS VOL, VOH VSS + 25 — VDD – 25 mV VDD = 5.5V, 0.5V input overdrive Common-Mode Open-Loop Gain DC Open-Loop Gain (Large Signal) Output Maximum Output Voltage Swing Output Short-Circuit Current ISC — ±6 — mA VDD = 1.8V — ±23 — mA VDD = 5.5V Power Supply Supply Voltage Quiescent Current per Amplifier VDD 1.8 — 6.0 V Note 2 IQ 50 100 170 µA IO = 0, VDD = 5.5V, VCM = 5V Note 1: MCP6001/1R/1U/2/4 parts with date codes prior to December 2004 (week code 49) were tested to ±7 mV minimum/maximum limits. 2: All parts with date codes November 2007 and later have been screened to ensure operation at VDD = 6.0V. However, the other minimum and maximum specifications are measured at 1.8V and 5.5V.  2002-2020 Microchip Technology Inc. DS20001733L-page 3 MCP6001/1R/1U/2/4 AC ELECTRICAL SPECIFICATIONS Electrical Characteristics: Unless otherwise indicated, TA = +25°C, VDD = +1.8 to 5.5V, VSS = GND, VCM = VDD/2, VL = VDD/2, VOUT  VDD/2, RL = 10 k to VL and CL = 60 pF (refer to Figure 1-1). Parameters Sym Min Typ Max Units Conditions AC Response Gain Bandwidth Product GBWP — 1.0 — MHz Phase Margin PM — 90 — ° Slew Rate SR — 0.6 — V/µs Input Noise Voltage Eni — 6.1 — µVp-p f = 0.1 Hz to 10 Hz Input Noise Voltage Density eni — 28 — nV/Hz f = 1 kHz Input Noise Current Density ini — 0.6 — fA/Hz f = 1 kHz G = +1 V/V Noise TEMPERATURE SPECIFICATIONS Electrical Characteristics: Unless otherwise indicated, VDD = +1.8V to +5.5V and VSS = GND. Parameters Sym Min Typ Max Units Conditions Temperature Ranges Industrial Temperature Range TA -40 — +85 °C Extended Temperature Range TA -40 — +125 °C Operating Temperature Range TA -40 — +125 °C Storage Temperature Range TA -65 — +150 °C Thermal Resistance, 5-Lead SC70 JA — 331 — °C/W Thermal Resistance, 5-Lead SOT-23 JA — 256 — °C/W Thermal Resistance, 8-Lead PDIP JA — 85 — °C/W Thermal Resistance, 8-Lead SOIC (150 mil) JA — 163 — °C/W Thermal Resistance, 8-Lead MSOP JA — 206 — °C/W Thermal Resistance, 8-Lead DFN (2x3) JA — 68 — °C/W Thermal Resistance, 14-Lead PDIP JA — 70 — °C/W Thermal Resistance, 14-Lead SOIC JA — 120 — °C/W Thermal Resistance, 14-Lead TSSOP JA — 100 — °C/W Note 1 Thermal Package Resistances Note 1: The industrial temperature devices operate over this extended temperature range, but with reduced performance. In any case, the internal Junction Temperature (TJ) must not exceed the Absolute Maximum specification of +150°C. DS20001733L-page 4  2002-2020 Microchip Technology Inc. MCP6001/1R/1U/2/4 1.1 Test Circuits The circuit used for most DC and AC tests is shown in Figure 1-1. This circuit can independently set VCM and VOUT; see Equation 1-1. Note that VCM is not the circuit’s Common-mode voltage ((VP + VM)/2) and that VOST includes VOS plus the effects (on the input offset error, VOST) of temperature, CMRR, PSRR and AOL. CF 6.8 pF RG 100 k VP VDD VIN+ EQUATION 1-1: G DM = R F  RG MCP600X V CM =  V P + V DD  2   2 CB1 100 nF + – VDD/2 CB2 1 µF VIN- V OST = VIN– – V IN+ V OUT =  VDD  2  +  V P – V M  + V OST  1 + G DM  Where: GDM = Differential-Mode Gain (V/V) VCM = Op Amp’s Common-Mode Input Voltage (V) VOST = Op Amp’s Total Input Offset Voltage (mV)  2002-2020 Microchip Technology Inc. RF 100 k VM RG 100 k RF 100 k CF 6.8 pF RL 10 k VOUT CL 60 pF VL FIGURE 1-1: AC and DC Test Circuit for Most Specifications. DS20001733L-page 5 MCP6001/1R/1U/2/4 NOTES: DS20001733L-page 6  2002-2020 Microchip Technology Inc. MCP6001/1R/1U/2/4 2.0 TYPICAL PERFORMANCE CURVES Note: The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. Input Offset Voltage (µV) -300 -400 TA = -40°C TA = +25°C TA = +85°C TA = +125°C -500 -600 0 0.05 0.04 0.03 0.02 0.01 0.00 -0.01 -0.02 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 -300 -400 TA = -40°C TA = +25°C TA = +85°C TA = +125°C -500 -600 6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 Common Mode Input Voltage (V) Input Offset Quadratic Temp. Co.; 2 TC2 (µV/°C ) Input Offset Quadratic  2002-2020 Microchip Technology Inc. -200 -700 10 12 2453 Samples TA = -40°C to +125°C VCM = VSS FIGURE 2-3: Temp. Co. VDD = 5.5V -100 0.0 8 Input Offset Voltage Drift. 45% 40% 35% 30% 25% 20% 15% 10% 5% 0% 0.4 FIGURE 2-4: Input Offset Voltage vs. Common-Mode Input Voltage at VDD = 1.8V. 2453 Samples TA = -40°C to +125°C VCM = VSS FIGURE 2-2: 0.2 Common Mode Input Voltage (V) Input Offset Voltage. -12 -10 -8 -6 -4 -2 0 2 4 6 Input Offset Voltage Drift; TC1 (µV/°C) 0.0 5 -0.2 4 -0.4 -2 -1 0 1 2 3 Input Offset Voltage (mV) Input Offset Voltage (µV) Percentage of Occurrences -200 -0.5 -3 FIGURE 2-5: Input Offset Voltage vs. Common-Mode Input Voltage at VDD = 5.5V. 200 Input Offset Voltage (µV) -4 FIGURE 2-1: Percentage of Occurrences VDD = 1.8V -100 -700 5 18% 16% 14% 12% 10% 8% 6% 4% 2% 0% 0 64,695 Samples VCM = VSS 0.07 20% 18% 16% 14% 12% 10% 8% 6% 4% 2% 0% 0.06 Percentage of Occurrences Note: Unless otherwise indicated, TA = +25°C, VDD = +1.8V to +5.5V, VSS = GND, VCM = VDD/2, VOUT  VDD/2, VL = VDD/2, RL = 10 kto VL and CL = 60 pF. 150 100 50 0 -50 VDD = 5.5V VDD = 1.8V -100 -150 VCM = VSS -200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 Output Voltage (V) FIGURE 2-6: Output Voltage. Input Offset Voltage vs. DS20001733L-page 7 MCP6001/1R/1U/2/4 Note: Unless otherwise indicated, TA = +25°C, VDD = +1.8V to +5.5V, VSS = GND, VCM = VDD/2, VOUT  VDD/2, VL = VDD/2, RL = 10 kto VL and CL = 60 pF. 10% 8% 6% 4% 2% 70 PSRR– 60 PSRR+ 50 CMRR 40 6 55% 50% 45% 40% 35% 30% 25% 20% 15% 10% 5% 0% 9 12 15 18 21 24 Input Bias Current (pA) 27 Input Bias Current at +85°C. Input Bias Current (pA) Input Bias Current at 100k 1.E+05 PSRR, CMRR vs. 0 100 -30 80 Phase 60 -90 40 Gain 20 0 -60 -120 -150 -180 VCM = VSS -20 0.1 1.E+ 1 1.E+ 10 1.E01 00 01 -210 100 1.E+ 1k 1.E+ 10k 100k 1M 10M 1.E+ 1.E+ 1.E+ 1.E+ Frequency 02 03 (Hz) 04 05 06 07 Open-Loop Gain, Phase vs. 1,000 Input Noise Voltage Density (nV/ Hz) 95 90 PSRR (VCM = VSS) 85 80 CMRR (VCM = -0.3V to +5.3V) 75 70 -25 1k 10k 1.E+03 1.E+04 Frequency (Hz) 120 FIGURE 2-11: Frequency. VDD = 5.0V -50 100 1.E+02 FIGURE 2-10: Frequency. Open-Loop Gain (dB) 1500 1350 1200 1050 900 750 600 300 150 0 605 Samples VDD = 5.5V VCM = VDD TA = +125°C FIGURE 2-8: +125°C. 20 10 1.E+01 30 Open-Loop Phase (°) 3 FIGURE 2-7: PSRR, CMRR (dB) 80 30 0% 100 VCM = VSS 90 PSRR, CMRR (dB) 12% 0 Percentage of Occurrences 100 1230 Samples VDD = 5.5V VCM = VDD TA = +85°C 450 Percentage of Occurrences 14% 0 25 50 75 Ambient Temperature (°C) FIGURE 2-9: Temperature. DS20001733L-page 8 100 125 CMRR, PSRR vs. Ambient 100 10 0.1 1.E+0 1 10 100 1.E+0 1k 10k 1.E+0 100k 1.E-01 1.E+0 1.E+0 1.E+0 0 1Frequency 2 (Hz)3 4 5 FIGURE 2-12: vs. Frequency. Input Noise Voltage Density  2002-2020 Microchip Technology Inc. MCP6001/1R/1U/2/4 Note: Unless otherwise indicated, TA = +25°C, VDD = +1.8V to +5.5V, VSS = GND, VCM = VDD/2, VOUT  VDD/2, VL = VDD/2, RL = 10 kto VL and CL = 60 pF. 0.08 G = +1 V/V 25 Output Voltage (20 mV/div) Short Circuit Current Magnitude (mA) 30 TA = -40°C TA = +25°C TA = +85°C TA = +125°C 20 15 10 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 Power Supply Voltage (V) FIGURE 2-13: Output Short-Circuit Current vs. Power Supply Voltage. 0.02 0.00 -0.02 -0.04 -0.06 0.E+00 1.E-06 2.E-06 3.E-06 4.E-06 5.E-06 6.E-06 7.E-06 8.E-06 FIGURE 2-16: Pulse Response. G = +1 V/V VDD = 5.0V VOL – VSS 10 1 10µ 1.E-05 160 10m 1.E-02 120 100 80 40 20 3.5 3.0 2.5 2.0 1.5 1.0 0.0 TA = +125°C TA = +85°C TA = +25°C TA = -40°C 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 0.E+00 1.E-05  2002-2020 Microchip Technology Inc. 3.E-05 FIGURE 2-17: Pulse Response. 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 4.E-05 5.E-05 6.E-05 7.E-05 8.E-05 9.E-05 1.E-04 Large-Signal, Noninverting VDD = 5.5V Falling Edge VDD = 1.8V Rising Edge -50 -25 0 25 50 75 100 125 Ambient Temperature (°C) Power Supply Voltage (V) FIGURE 2-15: Quiescent Current vs. Power Supply Voltage. 2.E-05 Time (10 µs/div) VCM = VDD - 0.5V 140 60 4.0 0.5 100µ 1m 1.E-04 1.E-03 Output Current Magnitude (A) FIGURE 2-14: Output Voltage Headroom vs. Output Current Magnitude. 180 Output Voltage (V) 4.5 VDD – VOH 1.E-05 Small-Signal, Noninverting 5.0 100 9.E-06 Time (1 µs/div) Slew Rate (V/µs) Output Voltage Headroom (mV) 0.04 -0.08 1,000 Quiescent Current per amplifier (µA) 0.06 FIGURE 2-18: Temperature. Slew Rate vs. Ambient DS20001733L-page 9 MCP6001/1R/1U/2/4 6 10 Input, Output Voltages (V) Output Voltage Swing (V P-P ) Note: Unless otherwise indicated, TA = +25°C, VDD = +1.8V to +5.5V, VSS = GND, VCM = VDD/2, VOUT  VDD/2, VL = VDD/2, RL = 10 kto VL and CL = 60 pF. VDD = 5.5V VDD = 1.8V 1 0.1 1k 1.E+03 10k 100k 1.E+04 1.E+05 Frequency (Hz) FIGURE 2-19: Frequency. Input Current Magnitude (A) 10m 1.E-02 1m 1.E-03 100µ 1.E-04 10µ 1.E-05 1µ 1.E-06 100n 1.E-07 10n 1.E-08 1n 1.E-09 100p 1.E-10 10p 1.E-11 1p 1.E-12 1M 1.E+06 Output Voltage Swing vs. VIN 5 VDD = 5.0V G = +2 V/V VOUT 4 3 2 1 0 -1 0.E+00 1.E-05 2.E-05 3.E-05 4.E-05 5.E-05 6.E-05 7.E-05 8.E-05 9.E-05 1.E-04 Time (10 µs/div) FIGURE 2-21: Phase Reversal. The MCP6001/2/4 Show No +125°C +85°C +25°C -40°C -1.0 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 0.0 Input Voltage (V) FIGURE 2-20: Measured Input Current vs. Input Voltage (below VSS). DS20001733L-page 10  2002-2020 Microchip Technology Inc. MCP6001/1R/1U/2/4 3.0 PIN DESCRIPTIONS Descriptions of the pins are listed in Table 3-1. TABLE 3-1: PIN FUNCTION TABLE MCP6001 MCP6001R MCP6001U MCP6002 MCP6004 8-Lead 8-Lead 8-Lead MSOP, 2x3 PDIP, SOIC, PDIP, SOIC DFN TSSOP 5-Lead SC70, SOT-23 5-Lead SOT-23 5-Lead SOT-23 1 1 4 1 1 1 4 4 3 2 2 2 VIN-, VINA- 3 3 1 3 3 3 VIN+, VINA+ Noninverting Input (Op Amp A) 3.1 VOUT, VOUTA Analog Output (Op Amp A) Inverting Input (Op Amp A) Positive Power Supply 5 2 5 8 8 4 VDD — — 5 5 5 VINB+ Noninverting Input (Op Amp B) — — — 6 6 6 VINB- Inverting Input (Op Amp B) — — — 7 7 7 VOUTB Analog Output (Op Amp B) — — — — — 8 VOUTC Analog Output (Op Amp C) — — — — — 9 VINC- Inverting Input (Op Amp C) — — — — — 10 VINC+ Noninverting Input (Op Amp C) 2 5 2 4 4 11 VSS — — — — — 12 VIND+ Noninverting Input (Op Amp D) — — — — — 13 VIND- Inverting Input (Op Amp D) — — — — — 14 VOUTD Analog Output (Op Amp D) — — — — 9 — EP Exposed Thermal Pad (EP); must be connected to VSS. Analog Outputs Analog Inputs The noninverting and inverting inputs are high-impedance CMOS inputs with low bias currents. 3.3 Description — The output pins are low-impedance voltage sources. 3.2 Symbol 3.4 Negative Power Supply Exposed Thermal Pad (EP) There is an internal electrical connection between the Exposed Thermal Pad (EP) and the VSS pin; they must be connected to the same potential on the Printed Circuit Board (PCB). Power Supply Pins The positive power supply (VDD) is 1.8V to 6.0V higher than the negative power supply (VSS). For normal operation, the other pins are at voltages between VSS and VDD. Typically, these parts are used in a single (positive) supply configuration. In this case, VSS is connected to ground and VDD is connected to the supply. VDD will need bypass capacitors.  2002-2020 Microchip Technology Inc. DS20001733L-page 11 MCP6001/1R/1U/2/4 NOTES: DS20001733L-page 12  2002-2020 Microchip Technology Inc. MCP6001/1R/1U/2/4 4.0 APPLICATION INFORMATION The MCP6001/2/4 family of op amps is manufactured using Microchip’s state-of-the-art CMOS process and is specifically designed for low-cost, low-power and general purpose applications. The low supply voltage, low quiescent current and wide bandwidth makes the MCP6001/2/4 ideal for battery-powered applications. These devices have high phase margin, which makes them stable for larger capacitive load applications. VDD, and dump any currents onto VDD. When implemented as shown, resistors, R1 and R2, also limit the current through D1 and D2. VDD D1 V1 + R1 4.1 Rail-to-Rail Inputs 4.1.1 V2 The MCP6001/1R/1U/2/4 op amp is designed to prevent phase reversal when the input pins exceed the supply voltages. Figure 2-21 shows the input voltage exceeding the supply voltage without any phase reversal. INPUT VOLTAGE AND CURRENT LIMITS The ESD protection on the inputs can be depicted as shown in Figure 4-1. This structure was chosen to protect the input transistors and to minimize Input Bias (IB) current. The input ESD diodes clamp the inputs when they try to go more than one diode drop below VSS. They also clamp any voltages that go too far above VDD; their breakdown voltage is high enough to allow normal operation and low enough to bypass quick ESD events within the specified limits. VDD Bond Pad – R3 VSS Input Stage Bond V IN Pad Bond Pad FIGURE 4-1: Structures. Simplified Analog Input ESD In order to prevent damage and/or improper operation of these op amps, the circuit they are in must limit the currents and voltages at the VIN+ and VIN- pins (see Absolute Maximum Ratings† at the beginning of Section 1.0 “Electrical Characteristics”). Figure 4-2 shows the recommended approach to protecting these inputs. The internal ESD diodes prevent the input pins (VIN+ and VIN-) from going too far below ground, and the resistors, R1 and R2, limit the possible current drawn out of the input pins. Diodes, D1 and D2, prevent the input pins (VIN+ and VIN-) from going too far above  2002-2020 Microchip Technology Inc. R1 > VSS – (minimum expected V1) 2 mA R2 > VSS – (minimum expected V2) 2 mA FIGURE 4-2: Inputs. Protecting the Analog It is also possible to connect the diodes to the left of resistors, R1 and R2. In this case, current through the diodes, D1 and D2, needs to be limited by some other mechanism. The resistors then serve as inrush current limiters; the DC current into the input pins (VIN+ and VIN-) should be very small. A significant amount of current can flow out of the inputs when the Common-Mode Voltage (VCM) is below ground (VSS); see Figure 2-20. Applications that are high-impedance may need to limit the usable voltage range. 4.1.3 VIN+ Bond Pad MCP600X R2 PHASE REVERSAL 4.1.2 D2 NORMAL OPERATION The input stage of the MCP6001/1R/1U/2/4 op amps use two differential CMOS input stages in parallel. One operates at low Common-mode input voltage (VCM), while the other operates at high VCM. With this topology, the device operates with VCM up to 0.3V above VDD and 0.3V below VSS. The transition between the two input stages occurs when VCM = VDD – 1.1V. For the best distortion and gain linearity, with noninverting gains, avoid this region of operation. 4.2 Rail-to-Rail Output The output voltage range of the MCP6001/2/4 op amps is VDD – 25 mV (minimum), and VSS + 25 mV (maximum) when RL = 10 k is connected to VDD/2 and VDD = 5.5V. Refer to Figure 2-14 for more information. DS20001733L-page 13 MCP6001/1R/1U/2/4 4.3 Capacitive Loads Driving large capacitive loads can cause stability problems for voltage feedback op amps. As the load capacitance increases, the feedback loop’s phase margin decreases and the closed-loop bandwidth is reduced. This produces gain peaking in the frequency response, with overshoot and ringing in the step response. While a unity gain buffer (G = +1) is the most sensitive to capacitive loads, all gains show the same general behavior. When driving large capacitive loads with these op amps (e.g., >100 pF when G = +1), a small series resistor at the output (RISO in Figure 4-3) improves the feedback loop’s phase margin (stability) by making the output load resistive at higher frequencies. The bandwidth will be generally lower than the bandwidth with no capacitance load. – MCP600X + VIN RISO VOUT CL FIGURE 4-3: Output Resistor, RISO, Stabilizes Large Capacitive Loads. Figure 4-4 gives recommended RISO values for different capacitive loads and gains. The x-axis is the normalized load capacitance (CL/GN), where GN is the circuit’s noise gain. For noninverting gains, GN and the signal gain are equal. For inverting gains, GN is 1+|Signal Gain| (e.g., -1 V/V gives GN = +2 V/V). After selecting RISO for your circuit, double-check the resulting frequency response peaking and step response overshoot. Modify RISO’s value until the response is reasonable. Bench evaluation and simulations with the MCP6001/1R/1U/2/4 SPICE macro model are very helpful. 4.4 Supply Bypass With this family of operational amplifiers, the power supply pin (VDD for single supply) should have a local bypass capacitor (i.e., 0.01 µF to 0.1 µF) within 2 mm for good high-frequency performance. It also needs a bulk capacitor (i.e., 1 µF or larger) within 100 mm to provide large, slow currents. This bulk capacitor can be shared with nearby analog parts. 4.5 Unused Op Amps An unused op amp in a quad package (MCP6004) should be configured as shown in Figure 4-5. These circuits prevent the output from toggling and causing crosstalk. Circuit A sets the op amp at its minimum noise gain. The resistor divider produces any desired reference voltage within the output voltage range of the op amp; the op amp buffers that reference voltage. Circuit B uses the minimum number of components and operates as a comparator, but it may draw more current. ¼ MCP6004 (A) R1 Recommended RISO (Ω) VDD VDD + R2 1000 ¼ MCP6004 (B) VDD – + VREF – VDD = 5.0V RL = 100 k
R2 VREF = V DD  -----------------R1 + R 2 100 GN = 1 GN  2 10 10p 1.E-11 FIGURE 4-5: Unused Op Amps. 100p 1n 10n 1.E-10 1.E-09 1.E-08 Normalized Load Capacitance; CL/GN (F) FIGURE 4-4: Recommended RISO Values for Capacitive Loads. DS20001733L-page 14  2002-2020 Microchip Technology Inc. MCP6001/1R/1U/2/4 4.6 PCB Surface Leakage In applications where low input bias current is critical, Printed Circuit Board (PCB) surface leakage effects need to be considered. Surface leakage is caused by humidity, dust or other contamination on the board. Under low humidity conditions, a typical resistance between nearby traces is 1012. A 5V difference would cause 5 pA of current to flow, which is greater than the MCP6001/1R/1U/2/4 family’s bias current at +25°C (typically 1 pA). The easiest way to reduce surface leakage is to use a guard ring around sensitive pins (or traces). The guard ring is biased at the same voltage as the sensitive pin. An example of this type of layout is shown in Figure 4-6. VIN- VIN+ VSS – VIN1 FIGURE 4-6: for Inverting Gain. 1. 2. Example Guard Ring Layout Noninverting Gain and Unity Gain Buffer: a. Connect the noninverting pin (VIN+) to the input with a wire that does not touch the PCB surface. b. Connect the guard ring to the inverting input pin (VIN-). This biases the guard ring to the Common-mode input voltage. Inverting Gain and Transimpedance Gain Amplifiers (convert current to voltage, such as photo detectors): a. Connect the guard ring to the noninverting input pin (VIN+). This biases the guard ring to the same reference voltage as the op amp (e.g., VDD/2 or ground). b. Connect the inverting pin (VIN-) to the input with a wire that does not touch the PCB surface. R1 + – MCP6001 – R2 1/2 MCP6002 VIN2 R1 = 20 k + R2 = 10 k R1 VREF R1 V OUT =  VIN2 – V IN1   ------ + VREF R2 FIGURE 4-7: Instrumentation Amplifier with Unity Gain Buffer Inputs. ACTIVE LOW-PASS FILTER The MCP6001/2/4 op amp’s low input bias current makes it possible for the designer to use larger resistors and smaller capacitors for active low-pass filter applications. However, as the resistance increases, the noise generated also increases. Parasitic capacitances and the large value resistors could also modify the frequency response. These trade-offs need to be considered when selecting circuit elements. Usually, the op amp bandwidth is 100x the filter cutoff frequency (or higher) for good performance. It is possible to have the op amp bandwidth 10x higher than the cutoff frequency, thus having a design that is more sensitive to component tolerances. Figure 4-8 shows a second-order Butterworth filter with 100 kHz cutoff frequency and a gain of +1 V/V; the op amp bandwidth is only 10x higher than the cutoff frequency. The component values were selected using Microchip’s FilterLab® software. 100 pF 14.3 k 53.6 k VIN + MCP6002 4.7 4.7.1 Application Circuits VOUT + 4.7.2 Guard Ring R2 1/2 MCP6002 33 pF – VOUT UNITY GAIN BUFFER The rail-to-rail input and output capability of the MCP6001/2/4 op amp is ideal for unity gain buffer applications. The low quiescent current and wide bandwidth makes the device suitable for a buffer configuration in an instrumentation amplifier circuit, as shown in Figure 4-7.  2002-2020 Microchip Technology Inc. FIGURE 4-8: Low-Pass Filter. Active Second-Order DS20001733L-page 15 MCP6001/1R/1U/2/4 4.7.3 PEAK DETECTOR can be determined. For example, with an op amp short-circuit current of ISC = 25 mA and a load capacitor of C1 = 0.1 µF, then: The MCP6001/2/4 op amp has a high input impedance, rail-to-rail input/output and low input bias current, which makes this device suitable for peak detector applications. Figure 4-9 shows a peak detector circuit with clear and sample switches. The peak detection cycle uses a clock (CLK), as shown in Figure 4-9. EQUATION 4-1: dV C1 ISC = C 1 ------------dt At the rising edge of the CLK, the sample switch closes to begin sampling. The peak voltage stored on C1 is sampled to C2 for a sample time defined by tSAMP. At the end of the sample time (falling edge of sample signal), the clear signal goes high and closes the clear switch. When the clear switch closes, C1 discharges through R1 for a time defined by tCLEAR. At the end of the clear time (falling edge of the clear signal), Op Amp A begins to store the peak value of VIN on C1 for a time defined by tDETECT. dV C1 I SC ------------- = -------dt C1 25mA = --------------0.1F dVC1 ------------- = 250mV  s dt This voltage rate of change is less than the MCP6001/2/4 slew rate of 0.6 V/µs. When the input voltage swings below the voltage across C1, D1 becomes reverse-biased. This opens the feedback loop and rails the amplifier. When the input voltage increases, the amplifier recovers at its slew rate. Based on the rate of voltage change shown in the above equation, it takes an extended period of time to charge a 0.1 µF capacitor. The capacitors need to be selected so that the circuit is not limited by the amplifier slew rate. Therefore, the capacitors should be less than 40 µF and a stabilizing resistor (RISO) needs to be properly selected. (Refer to Section 4.3 “Capacitive Loads”.) In order to define tSAMP and tCLEAR, it is necessary to determine the capacitor charging and discharging period. The capacitor charging time is limited by the amplifier source current, while the discharging time () is defined using R1 ( = R1C1). tDETECT is the time that the input signal is sampled on C1 and is dependent on the input voltage change frequency. The op amp output current limit, and the size of the storage capacitors (both C1 and C2), could create slewing limitations as the Input Voltage (VIN) increases. Current through a capacitor is dependent on the size of the capacitor and the rate of voltage change. From this relationship, the rate of voltage change or the slew rate VIN + 1/2 MCP6002 – Op Amp A D1 RISO VC1 RISO + C1 R1 1/2 MCP6002 – VC2 + C2 Op Amp B MCP6001 – VOUT Op Amp C Sample Switch Clear Switch tSAMP Sample Signal tCLEAR Clear Signal tDETECT CLK FIGURE 4-9: DS20001733L-page 16 Peak Detector with Clear and Sample CMOS Analog Switches.  2002-2020 Microchip Technology Inc. MCP6001/1R/1U/2/4 5.0 DESIGN AIDS Microchip provides the basic design tools needed for the MCP6001/1R/1U/2/4 family of op amps. 5.1 SPICE Macro Model The latest SPICE macro model for the MCP6001/1R/1U/2/4 op amps is available on the Microchip website at www.microchip.com. The model was written and tested in official OrCAD™ (Cadence®) owned PSpice®. For the other simulators, it may require translation. The model covers a wide aspect of the op amp’s electrical specifications. Not only does the model cover voltage, current and resistance of the op amp, but it also covers the temperature and noise effects on the behavior of the op amp. The model has not been verified outside of the specification range listed in the op amp data sheet. The model behaviors under these conditions can not be ensured that it will match the actual op amp performance. Moreover, the model is intended to be an initial design tool. Bench testing is a very important part of any design and cannot be replaced with simulations. Also, simulation results using this macro model need to be validated by comparing them to the data sheet specifications and characteristic curves. 5.2 FilterLab® Software Microchip’s FilterLab® software is an innovative software tool that simplifies analog active filter (using op amps) design. Available at no cost from the Microchip website at www.microchip.com/filterlab, the FilterLab design tool provides full schematic diagrams of the filter circuit with component values. It also outputs the filter circuit in SPICE format, which can be used with the macro model to simulate actual filter performance. 5.3 5.4 Microchip Advanced Part Selector (MAPS) MAPS is a software tool that helps semiconductor professionals efficiently identify Microchip devices that fit a particular design requirement. Available at no cost from the Microchip website at www.microchip.com/ maps, the MAPS is an overall selection tool for Microchip’s product portfolio that includes Analog, Memory, MCUs and DSCs. Using this tool you can define a filter to sort features for a parametric search of devices and export side-by-side technical comparison reports. Helpful links are also provided for Data Sheets, Purchase and Sampling of Microchip parts. 5.5 Analog Demonstration and Evaluation Boards Microchip offers a broad spectrum of Analog Demonstration and Evaluation Boards that are designed to help you achieve faster time to market. For a complete listing of these boards and their corresponding user’s guides and technical information, visit the Microchip website at www.microchip.com/analogtools. Some boards that are especially useful are: • • • • • • • MCP6XXX Amplifier Evaluation Board 1 MCP6XXX Amplifier Evaluation Board 2 MCP6XXX Amplifier Evaluation Board 3 MCP6XXX Amplifier Evaluation Board 4 Active Filter Demo Board Kit 5/6-Pin SOT-23 Evaluation Board, P/N VSUPEV2 8-Pin SOIC/MSOP/TSSOP/DIP Evaluation Board, P/N SOIC8EV • 14-Pin SOIC/TSSOP/DIP Evaluation Board, P/N SOIC14EV Mindi™ Circuit Designer and Analog Simulator Microchip’s Mindi™ Circuit Designer and Analog Simulator aids in the design of various circuits useful for active filter, amplifier and power management applications. It is a free online circuit designer and simulator available from the Microchip website at www.microchip.com/mindi. This interactive circuit designer and analog simulator enables designers to quickly generate circuit diagrams and simulate circuits. Circuits developed using the Mindi Circuit Designer and Analog Simulator can be downloaded to a personal computer or workstation.  2002-2020 Microchip Technology Inc. DS20001733L-page 17 MCP6001/1R/1U/2/4 5.6 Application Notes The following Microchip Analog Design Note and Application Notes are available on the Microchip website at www.microchip.com/appnotes and are recommended as supplemental reference resources. • ADN003: “Select the Right Operational Amplifier for your Filtering Circuits” (DS21821) • AN722: “Operational Amplifier Topologies and DC Specifications” (DS00722) • AN723: “Operational Amplifier AC Specifications and Applications” (DS00723) • AN884: “Driving Capacitive Loads With Op Amps” (DS00884) DS20001733L-page 18 • AN990: “Analog Sensor Conditioning Circuits – An Overview” (DS00990) • AN1177: “Op Amp Precision Design: DC Errors” (DS01177) • AN1228: “Op Amp Precision Design: Random Noise” (DS01228) • AN1297: “Microchip’s Op Amp SPICE Macro Models” (DS01297) These application notes and others are listed in the design guide: • “Signal Chain Design Guide” (DS21825)  2002-2020 Microchip Technology Inc. MCP6001/1R/1U/2/4 6.0 PACKAGING INFORMATION 6.1 Package Marking Information 5-Lead SC-70 (MCP6001) XXN (Front) YWW (Back) Example: (I-Temp) Device MCP6001 I-Temp Code E-Temp Code AAN CDN AA7 (Front) 432 (Back) Note: Applies to 5-Lead SC-70. OR OR XXNN Device I-Temp Code E-Temp Code MCP6001 AANN CDNN AA74 Note: Applies to 5-Lead SC-70. Example: (E-Temp) 5-Lead SOT-23 (MCP6001/1R/1U) 4 5 XXNN 1 2 I-Temp Code E-Temp Code MCP6001 AANN CDNN MCP6001R ADNN CENN MCP6001U AFNN CFNN Device 3 4 5 CD25 1 2 3 Note: Applies to 5-Lead SOT-23. 8-Lead PDIP (300 mil) XXXXXXXX XXXXXNNN YYWW MCP6002 I/P256 0432 8-Lead DFN (2 x 3) XXX YWW NN OR MCP6002 e3 I/P^^256 0746 Example: ABY 944 25 Legend: XX...X Y YY WW NNN e3 * Note: Example: Customer-specific information Year code (last digit of calendar year) Year code (last 2 digits of calendar year) Week code (week of January 1 is week ‘01’) Alphanumeric traceability code Pb-free JEDEC designator for Matte Tin (Sn) This package is Pb-free. The Pb-free JEDEC designator ( e3 ) can be found on the outer packaging for this package. In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for customer-specific information.  2002-2020 Microchip Technology Inc. DS20001733L-page 19 MCP6001/1R/1U/2/4 Package Marking Information (Continued) 8-Lead SOIC (150 mil) Example: XXXXXXXX XXXXYYWW NNN MCP6002I SN0432 256 8-Lead MSOP OR MCP6002I e3 SN^^0746 256 Example: XXXXXX YWWNNN 6002I 432256 14-Lead PDIP (300 mil) (MCP6004) Example: XXXXXXXXXXXXXX XXXXXXXXXXXXXX MCP6004 I/P e3 YYWWNNN 0432256 OR MCP6004 E/P e3 0746256 14-Lead SOIC (150 mil) (MCP6004) XXXXXXXXXX XXXXXXXXXX YYWWNNN 14-Lead TSSOP (MCP6004) XXXXXX YYWW NNN DS20001733L-page 20 Example: MCP6004ISL MCP6004 E/SL e3 0746256 OR 0432256 Example: 6004ST 0432 256 OR 6004STE 0432 256  2002-2020 Microchip Technology Inc. MCP6001/1R/1U/2/4 5-Lead Plastic Small Outline Transistor (LT) [SC70] Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging D A e e 3 B 1 E1 E 2X 0.15 C 4 N 5X TIPS 0.30 C NOTE 1 2X 0.15 C 5X b 0.10 C A B TOP VIEW C c A2 A SEATING PLANE A1 L SIDE VIEW END VIEW Microchip Technology Drawing C04-061-LT Rev E Sheet 1 of 2  2002-2020 Microchip Technology Inc. DS20001733L-page 21 MCP6001/1R/1U/2/4 5-Lead Plastic Small Outline Transistor (LT) [SC70] Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging Units Dimension Limits Number of Pins N e Pitch Overall Height A Standoff A1 A2 Molded Package Thickness Overall Length D Overall Width E Molded Package Width E1 b Terminal Width Terminal Length L c Lead Thickness MIN 0.80 0.00 0.80 0.15 0.10 0.08 MILLIMETERS NOM 5 0.65 BSC 2.00 BSC 2.10 BSC 1.25 BSC 0.20 - MAX 1.10 0.10 1.00 0.40 0.46 0.26 Notes: 1. Pin 1 visual index feature may vary, but must be located within the hatched area. 2. Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed 0.15mm per side. 3. Dimensioning and tolerancing per ASME Y14.5M BSC: Basic Dimension. Theoretically exact value shown without tolerances. REF: Reference Dimension, usually without tolerance, for information purposes only. Microchip Technology Drawing C04-061-LT Rev E Sheet 2 of 2 DS20001733L-page 22  2002-2020 Microchip Technology Inc. MCP6001/1R/1U/2/4 5-Lead Plastic Small Outline Transistor (LT) [SC70] Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging E Gx SILK SCREEN 3 2 1 C G 4 5 Y X RECOMMENDED LAND PATTERN Units Dimension Limits E Contact Pitch Contact Pad Spacing C Contact Pad Width X Contact Pad Length Y Distance Between Pads G Distance Between Pads Gx MIN MILLIMETERS NOM 0.65 BSC 2.20 MAX 0.45 0.95 1.25 0.20 Notes: 1. Dimensioning and tolerancing per ASME Y14.5M BSC: Basic Dimension. Theoretically exact value shown without tolerances. Microchip Technology Drawing No. C04-2061-LT Rev E  2002-2020 Microchip Technology Inc. DS20001733L-page 23 MCP6001/1R/1U/2/4 5-Lead Plastic Small Outline Transistor (OT) [SOT23] Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging 0.20 C 2X D e1 A D N E/2 E1/2 E1 E (DATUM D) (DATUM A-B) 0.15 C D 2X NOTE 1 1 2 e B NX b 0.20 C A-B D TOP VIEW A A A2 0.20 C SEATING PLANE A SEE SHEET 2 A1 C SIDE VIEW Microchip Technology Drawing C04-091-OT Rev F Sheet 1 of 2 DS20001733L-page 24  2002-2020 Microchip Technology Inc. MCP6001/1R/1U/2/4 5-Lead Plastic Small Outline Transistor (OT) [SOT23] Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging c T L L1 VIEW A-A SHEET 1 Units Dimension Limits N Number of Pins e Pitch e1 Outside lead pitch A Overall Height A2 Molded Package Thickness Standoff A1 Overall Width E Molded Package Width E1 Overall Length D Foot Length L Footprint L1 I Foot Angle c Lead Thickness b Lead Width MIN 0.90 0.89 - 0.30 0° 0.08 0.20 MILLIMETERS NOM 5 0.95 BSC 1.90 BSC 2.80 BSC 1.60 BSC 2.90 BSC 0.60 REF - MAX 1.45 1.30 0.15 0.60 10° 0.26 0.51 Notes: 1. Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed 0.25mm per side. 2. Dimensioning and tolerancing per ASME Y14.5M BSC: Basic Dimension. Theoretically exact value shown without tolerances. REF: Reference Dimension, usually without tolerance, for information purposes only. Microchip Technology Drawing C04-091-OT Rev F Sheet 2 of 2  2002-2020 Microchip Technology Inc. DS20001733L-page 25 MCP6001/1R/1U/2/4 5-Lead Plastic Small Outline Transistor (OT) [SOT23] Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging X SILK SCREEN 5 Y Z C G 1 2 E GX RECOMMENDED LAND PATTERN Units Dimension Limits E Contact Pitch C Contact Pad Spacing X Contact Pad Width (X5) Contact Pad Length (X5) Y Distance Between Pads G Distance Between Pads GX Overall Width Z MIN MILLIMETERS NOM 0.95 BSC 2.80 MAX 0.60 1.10 1.70 0.35 3.90 Notes: 1. Dimensioning and tolerancing per ASME Y14.5M BSC: Basic Dimension. Theoretically exact value shown without tolerances. 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