MCP6271/1R/2/3/4/5
170 µA, 2 MHz Rail-to-Rail Op Amp
Features
Description
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The Microchip Technology Inc. MCP6271/1R/2/3/4/5
family of operational amplifiers (op amps) provide wide
bandwidth for the current. This family has a 2 MHz
Gain Bandwidth Product (GBWP) and a 65° Phase
Margin. This family also operates from a single supply
voltage as low as 2.0V, while drawing 170 µA (typical)
quiescent current. The MCP6271/1R/2/3/4/5 supports
rail-to-rail input and output swing, with a Commonmode input voltage range of VDD + 300 mV to VSS –
300 mV. This family of op amps is designed with Microchip’s advanced CMOS process.
Gain Bandwidth Product: 2 MHz (typical)
Supply Current: IQ = 170 µA (typical)
Supply Voltage: 2.0V to 6.0V
Rail-to-Rail Input/Output
Extended Temperature Range: –40°C to +125°C
Available in Single, Dual and Quad Packages
Parts with Chip Select (CS)
- Single (MCP6273)
- Dual (MCP6275)
Applications
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The MCP6275 has a Chip Select input (CS) for dual op
amps in an 8-pin package and is manufactured by
cascading two op amps (the output of op amp A
connected to the non-inverting input of op amp B). The
CS input puts the device in low power mode.
Automotive
Portable Equipment
Photodiode Amplifier
Analog Filters
Notebooks and PDAs
Battery Powered Systems
The MCP6271/1R/2/3/4/5 family operates over the
Extended Temperature Range of –40°C to +125°C,
with a power supply range of 2.0V to 6.0V.
Available Tools
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SPICE Macro Models
FilterLab® Software
Mindi™ Circuit Designer & Simulator
MAPS (Microchip Advanced Part Selector)
Analog Demonstration and Evaluation Boards
Application Notes
Package Types
MCP6271
PDIP, SOIC, MSOP
NC 1
VIN– 2
VIN+ 3
MCP6271
SOT-23-5
VOUT 1
8 NC
–
+
7 VDD
VSS 2
6 VOUT
VIN+ 3
NC 1
VSS 4
VOUT 1
VDD 2
+ –
4 VIN–
5 VSS
8 CS
–
+
7 VDD
VOUTA 1
VINA– 2
+ –
VIN+ 3
MCP6272
PDIP, SOIC, MSOP
4 VIN–
8 VDD
–+
7 VOUTB
–+
VINA+ 3
MCP6273
SOT-23-6
VOUT 1
VSS 2
6 VOUT VIN+ 3
5 NC
MCP6274
PDIP, SOIC, TSSOP
6 VDD VOUTA 1
+–
5 CS
VINA– 2
4 VIN– VINA+ 3
11 VSS
VDD 4
VINB+ 5
VINB– 6
VOUTB 7
2019 Microchip Technology Inc.
MCP6275
PDIP, SOIC, MSOP
14 VOUTD VOUTA/VINB+ 1
– + + – 13 VIND–
12 VIND+
6 VINB–
5 VINB+
VSS 4
MCP6273
PDIP, SOIC, MSOP
VIN– 2
5 VDD
5 NC
VSS 4
VIN+ 3
MCP6271R
SOT-23-5
VINA– 2
VINA+ 3
VSS 4
8 VDD
–+
7 VOUTB
+–
6 VINB–
5 CS
10 VINC+
–+
+–
9 VINC–
8 VOUTC
DS20001810G-page 1
MCP6271/1R/2/3/4/5
NOTES:
DS20001810G-page 2
2019 Microchip Technology Inc.
MCP6271/1R/2/3/4/5
1.0
ELECTRICAL
CHARACTERISTICS
VDD – VSS ........................................................................7.0V
† Notice: Stresses above those listed under “Absolute
Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of
the device at those or any other conditions above those
indicated in the operational listings of this specification is not
implied. Exposure to maximum rating conditions for extended
periods may affect device reliability.
Current at Input Pins ....................................................±2 mA
†† See Section 4.1.2 “Input Voltage and Current Limits”.
Absolute Maximum Ratings †
Analog Inputs (VIN+ and VIN–) †† .. VSS – 1.0V to VDD + 1.0V
All other Inputs and Outputs .......... VSS – 0.3V to VDD + 0.3V
Difference Input Voltage ...................................... |VDD – VSS|
Output Short Circuit Current ................................ Continuous
Current at Output and Supply Pins ............................±30 mA
Storage Temperature ................................... –65°C to +150°C
Junction Temperature (TJ) .........................................+150°C
ESD Protection On All Pins (HBM/MM) 4 kV/400V
DC ELECTRICAL SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, TA = +25°C, VDD = +2.0V to +5.5V, VSS = GND, VCM = VDD/2,
VOUT VDD/2, VL = VDD/2, RL = 10 kto VL and CS is tied low. (Refer to Figure 1-2 and Figure 1-3).
Parameters
Sym
Min
Typ
Max
Units
Conditions
Input Offset Voltage
VOS
–3.0
—
+3.0
mV
VCM = VSS
Input Offset Voltage
(Extended Temperature)
VOS
–5.0
—
+5.0
mV
TA = –40°C to +125°C, VCM = VSS
Input Offset (Note 1)
Input Offset Temperature Drift
VOS/TA
—
±1.7
—
Power Supply Rejection Ratio
PSRR
70
90
—
IB
—
±1.0
—
pA
Note 2
IB
—
50
200
pA
TA= +85°C (Note 2)
IB
—
2
5
nA
TA= +125°C (Note 2)
IOS
—
±1.0
—
pA
Note 3
13
µV/°C TA = –40°C to +125°C, VCM = VSS
dB
VCM = VSS
Input Bias Current and Impedance
Input Bias Current
At Temperature
At Temperature
Input Offset Current
Common-mode Input Impedance
ZCM
—
10 ||6
—
||pF Note 3
Differential Input Impedance
ZDIFF
—
1013||3
—
||pF Note 3
Common-mode Input Voltage Range
VCMR
VSS 0.15
—
VDD + 0.15
VCMR
VSS 0.30
—
VDD + 0.30
V
VDD = 5.5V (Note 5)
Common-mode Rejection Ratio
CMRR
70
85
—
dB
VCM = –0.3V to 2.5V, VDD = 5V
(Note 6)
Common-mode Rejection Ratio
CMRR
65
80
—
dB
VCM = –0.3V to 5.3V, VDD = 5V
(Note 6)
AOL
90
110
—
dB
VOUT = 0.2V to VDD – 0.2V,
VCM = VSS (Note 1)
Common-mode (Note 4)
V
VDD = 2.0V (Note 5)
Open-Loop Gain
DC Open-Loop Gain (Large Signal)
Note 1:
2:
3:
4:
5:
6:
7:
The MCP6275’s VCM for op amp B (pins VOUTA/VINB+ and VINB–) is VSS + 100 mV.
The current at the MCP6275’s VINB– pin is specified by IB only.
This specification does not apply to the MCP6275’s VOUTA/VINB+ pin.
The MCP6275’s VINB– pin (op amp B) has a Common-mode input voltage range (VCMR) of VSS + 100 mV to
VDD – 100 mV. CMRR is not measured for op amp B of the MCP6275. The MCP6275’s VOUTA/VINB+ pin (op amp B)
has a voltage range specified by VOH and VOL.
Set by design and characterization.
Does not apply to op amp B of the MCP6275.
All parts with date codes November 2007 and later have been screened to ensure operation at VDD = 6.0V. However,
the other minimum and maximum specifications are measured at 2.0V and 5.5V.
2019 Microchip Technology Inc.
DS20001810G-page 3
MCP6271/1R/2/3/4/5
DC ELECTRICAL SPECIFICATIONS (CONTINUED)
Electrical Characteristics: Unless otherwise indicated, TA = +25°C, VDD = +2.0V to +5.5V, VSS = GND, VCM = VDD/2,
VOUT VDD/2, VL = VDD/2, RL = 10 kto VL and CS is tied low. (Refer to Figure 1-2 and Figure 1-3).
Parameters
Sym
Min
Typ
Max
Units
VOL, VOH
VSS + 15
—
VDD 15
mV
ISC
—
±25
—
mA
Conditions
Output
Maximum Output Voltage Swing
Output Short Circuit Current
0.5V input overdrive (Note 4)
Power Supply
Supply Voltage
Quiescent Current per Amplifier
Note 1:
2:
3:
4:
VDD
2.0
—
6.0
V
IQ
100
170
240
µA
IO = 0
The MCP6275’s VCM for op amp B (pins VOUTA/VINB+ and VINB–) is VSS + 100 mV.
The current at the MCP6275’s VINB– pin is specified by IB only.
This specification does not apply to the MCP6275’s VOUTA/VINB+ pin.
The MCP6275’s VINB– pin (op amp B) has a Common-mode input voltage range (VCMR) of VSS + 100 mV to
VDD – 100 mV. CMRR is not measured for op amp B of the MCP6275. The MCP6275’s VOUTA/VINB+ pin (op amp B)
has a voltage range specified by VOH and VOL.
Set by design and characterization.
Does not apply to op amp B of the MCP6275.
All parts with date codes November 2007 and later have been screened to ensure operation at VDD = 6.0V. However,
the other minimum and maximum specifications are measured at 2.0V and 5.5V.
5:
6:
7:
AC ELECTRICAL SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, TA = +25°C, VDD = +2.0V to +5.5V, VSS = GND, VCM = VDD/2,
VOUT VDD/2, VL = VDD/2, RL = 10 kto VL, CL = 60 pF and CS is tied low. (Refer to Figure 1-2 and Figure 1-3).
Parameters
Sym
Min
Typ
Max
Units
Conditions
GBWP
—
2.0
—
MHz
Phase Margin
PM
—
65
—
°
Slew Rate
SR
—
0.9
—
V/µs
Input Noise Voltage
Eni
—
4.6
—
µVP-P
Input Noise Voltage Density
eni
—
20
—
nV/Hz
f = 1 kHz
Input Noise Current Density
ini
—
3
—
fA/Hz
f = 1 kHz
AC Response
Gain Bandwidth Product
G = +1 V/V
Noise
CS
VIL
VIH
tOFF
tON
VOUT
High-Z
High-Z
-0.7 µA
(typical)
ISS
0.7 µA
(typical)
ICS
f = 0.1 Hz to 10 Hz
-170 µA
(typical)
10 nA
(typical)
-0.7 µA
(typical)
0.7 µA
(typical)
FIGURE 1-1:
Timing Diagram for the Chip
Select (CS) pin on the MCP6273 and MCP6275.
DS20001810G-page 4
2019 Microchip Technology Inc.
MCP6271/1R/2/3/4/5
TEMPERATURE SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, VDD = +2.0V to +5.5V and VSS = GND.
Parameters
Sym
Min
Typ
Max
Units
Specified Temperature Range
TA
–40
—
+125
°C
Operating Temperature Range
TA
–40
—
+125
°C
Storage Temperature Range
TA
–65
—
+150
°C
Thermal Resistance, 5L-SOT-23
JA
—
256
—
°C/W
Thermal Resistance, 6L-SOT-23
JA
—
230
—
°C/W
Thermal Resistance, 8L-PDIP
JA
—
85
—
°C/W
Thermal Resistance, 8L-SOIC
JA
—
163
—
°C/W
Thermal Resistance, 8L-MSOP
JA
—
206
—
°C/W
Thermal Resistance, 14L-PDIP
JA
—
70
—
°C/W
Thermal Resistance, 14L-SOIC
JA
—
120
—
°C/W
Thermal Resistance, 14L-TSSOP
JA
—
100
—
°C/W
Conditions
Temperature Ranges
Note
Thermal Package Resistances
The Junction Temperature (TJ) must not exceed the Absolute Maximum specification of +150°C.
Note:
MCP6273/MCP6275 CHIP SELECT SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, TA = +25°C, VDD = +2.0V to +5.5V, VSS = GND,
VCM = VDD/2, VOUT VDD/2, VL = VDD/2, RL = 10 kto VDD/2, CL = 60 pF and CS is tied low.
Parameters
Sym
Min
Typ
Max
Units
Conditions
CS Logic Threshold, Low
VIL
VSS
—
0.2VDD
V
CS Input Current, Low
ICSL
—
0.01
—
µA
CS Logic Threshold, High
VIH
0.8VDD
—
VDD
V
CS Input Current, High
ICSH
—
0.7
2
µA
CS = VDD
GND Current per Amplifier
ISS
—
–0.7
—
µA
CS = VDD
Amplifier Output Leakage
—
—
0.01
—
µA
CS = VDD
CS Low to Valid Amplifier
Output, Turn on Time
tON
—
4
10
µs
CS Low 0.2 VDD, G = +1 V/V,
VIN = VDD/2, VOUT = 0.9 VDD/2,
VDD = 5.0V
CS High to Amplifier Output
High-Z
tOFF
—
0.01
—
µs
CS High 0.8 VDD, G = +1 V/V,
VIN = VDD/2, VOUT = 0.1 VDD/2
VHYST
—
0.6
—
V
VDD = 5V
CS Low Specifications
CS = VSS
CS High Specifications
Dynamic Specifications (Note 1)
Hysteresis
Note 1:
The input condition (VIN) specified applies to both op amp A and B of the MCP6275. The dynamic
specification is tested at the output of op amp B (VOUTB).
2019 Microchip Technology Inc.
DS20001810G-page 5
MCP6271/1R/2/3/4/5
1.1
Test Circuits
The test circuits used for the DC and AC tests are
shown in Figure 1-2 and Figure 1-3. The bypass
capacitors are laid out according to the rules discussed
in Section 4.7 “Supply Bypass”.
VDD
VIN
RN
0.1 µF 1 µF
VOUT
MCP627X
CL
VDD/2 RG
RL
RF
VL
FIGURE 1-2:
AC and DC Test Circuit for
Most Non-Inverting Gain Conditions.
VDD
VDD/2
RN
0.1 µF 1 µF
VOUT
MCP627X
CL
VIN
RG
RL
RF
VL
FIGURE 1-3:
AC and DC Test Circuit for
Most Inverting Gain Conditions.
DS20001810G-page 6
2019 Microchip Technology Inc.
MCP6271/1R/2/3/4/5
2.0
TYPICAL PERFORMANCE CURVES
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note: Unless otherwise indicated, TA = +25°C, VDD = +2.0V to +5.5V, VSS = GND, VCM = VDD/2, VOUT VDD/2,
14%
2%
Input Offset Voltage (mV)
FIGURE 2-3:
Input Offset Voltage vs.
Common-mode Input Voltage, with VDD = 2.0V.
2019 Microchip Technology Inc.
10
8
3.0
2.6
2.4
6.0
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-0.2
-0.4
Common Mode Input Voltage (V)
TA = +125°C
100
50
TA = +85°C
TA = +25°C
TA = -40°C
0
-50
-100
5.0
-50
-100
150
4.5
0
200
4.0
TA = +125°C
TA = +85°C
TA = +25°C
TA = -40°C
VDD = 5.5V
250
3.5
150
Input Bias Current at
3.0
200
50
2.8
300
VDD = 2.0V
100
5.5
FIGURE 2-5:
TA = +125°C.
Input Bias Current at
2.5
250
Input Bias Current (nA)
2.0
Input Offset Voltage (µV)
300
90 100
1.5
FIGURE 2-2:
TA = +85°C.
30 40 50 60 70 80
Input Bias Current (pA)
1.0
20
0.5
10
-0.5
0
2.2
0%
2.0
4%
1.8
8%
1.6
12%
1.4
16%
1.2
20%
422 Samples
TA = +125°C
1.0
24%
22%
20%
18%
16%
14%
12%
10%
8%
6%
4%
2%
0%
Input Offset Voltage Drift.
0.8
422 Samples
TA = 85°C
Percentage of Occurrences
28%
FIGURE 2-4:
Input Offset Voltage.
Input Offset Voltage (µV)
Percentage of Occurrences
32%
Input Offset Voltage Drift (µV/°C)
0.6
FIGURE 2-1:
6
0%
4
3.0
2.4
1.8
1.2
0.6
0.0
-0.6
-1.2
-1.8
-2.4
0%
4%
2
2%
0
4%
6%
-2
6%
8%
-4
8%
-6
10%
10%
-8
12%
832 Samples
VCM = VSS
TA = -40°C to +125°C
12%
-10
14%
Percentage of Occurrences
832 Samples
VCM = VSS
16%
0.0
18%
-3.0
Percentage of Occurrences
VL = VDD/2, RL = 10 k to VL, CL = 60 pF and CS is tied low.
Common Mode Input Voltage (V)
FIGURE 2-6:
Input Offset Voltage vs.
Common-mode Input Voltage, with VDD = 5.5V.
DS20001810G-page 7
MCP6271/1R/2/3/4/5
Note: Unless otherwise indicated, TA = +25°C, VDD = +2.0V to +5.5V, VSS = GND, VCM = VDD/2, VOUT VDD/2,
Common Mode Input Voltage
Range Limit (V)
0.00
-0.05
-0.10
-0.15
-0.20
-0.25
-0.30
-0.35
-0.40
-0.45
-0.50
Typical lower (VCM – VSS) limit
VDD = 2.0V
VDD = 5.5V
-50
-25
0
25
50
75
100
Ambient Temperature (°C)
FIGURE 2-7:
Common-mode Input
Voltage Range Lower Limit vs. Temperature.
Input Offset Voltage (µV)
300
VCM = VSS
Representative Part
250
200
150
100
50
0
VDD = 2.0V
0.50
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
125
VDD = 5.5V
-50
-100
Input Offset Voltage vs.
0
25
50
75
100
Ambient Temperature (°C)
125
1,000
VCM = VDD
VDD = 5.5V
Input Bias Current
100
10
Input Offset Current
1
45
55
65 75 85 95 105 115 125
Ambient Temperature (°C)
FIGURE 2-11:
Input Bias, Input Offset
Currents vs. Temperature.
CMRR
90
80
70
PSRR–
PSRR+
40
30
20
1
10 1.E+02
100 1.E+03
1k
10k 1.E+05
100k 1.E+06
1M
1.E+00
1.E+01
1.E+04
Frequency (Hz)
FIGURE 2-9:
Frequency.
DS20001810G-page 8
CMRR, PSRR vs.
PSRR, CMRR (dB)
CMRR, PSRR (dB)
-25
120
100
50
Typical upper (VCM – VDD) limit
10,000
110
60
VDD = 2.0V
FIGURE 2-10:
Common-mode Input
Voltage Range Upper Limit vs. Temperature.
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Output Voltage (V)
FIGURE 2-8:
Output Voltage.
VDD = 5.5V
-50
Input Bias, Offset Currents
(pA)
Common Mode Input Voltage
Range Limit (V)
VL = VDD/2, RL = 10 k to VL, CL = 60 pF and CS is tied low.
110
100
CMRR
90
PSRR
(VCM = VSS)
80
70
60
-50
-25
0
25
50
75
100
125
Ambient Temperature (°C)
FIGURE 2-12:
Temperature.
CMRR, PSRR vs.
2019 Microchip Technology Inc.
MCP6271/1R/2/3/4/5
Note: Unless otherwise indicated, TA = +25°C, VDD = +2.0V to +5.5V, VSS = GND, VCM = VDD/2, VOUT VDD/2,
VL = VDD/2, RL = 10 k to VL, CL = 60 pF and CS is tied low.
2.5
Input Bias, Offset Currents
(nA)
45
Input Bias Current
35
25
15
5
Input Offset Current
-5
TA = 85°C
VDD = 5.5V
-15
-25
2.0
1.5
0.5
0.0
-1.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Common Mode Input Voltage (V)
FIGURE 2-16:
Input Bias, Offset Currents
vs. Common-mode Input Voltage, with
TA = +125°C.
Ouput Voltage Headroom
(mV)
Quiescent Current
(µA/amplifier)
Input Offset Current
1000
250
200
150
TA = +125°C
TA = +85°C
TA = +25°C
TA = -40°C
100
50
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Power Supply Voltage (V)
Quiescent Current vs.
0
100
-30
Gain
80
60
-60
-90
Phase
40
-120
20
-150
0
-180
FIGURE 2-15:
Frequency.
1.E+08
1.E+07
1.E+06
1.E+05
1.E+04
1.E+03
1.E+02
1
1.E+01
0.1
1.E+00
-210
1.E-01
-20
10 100 1k 10k 100k 1M 10M 100M
Frequency (Hz)
Open-Loop Gain, Phase vs.
2019 Microchip Technology Inc.
10
VOL – VSS
VDD – VOH
1
0.01
0.1
1
Output Current Magnitude (mA)
3.0
Gain Bandwidth Product
(MHz)
120
100
10
FIGURE 2-17:
Output Voltage Headroom
vs. Output Current Magnitude.
Open-Loop Phase (°)
FIGURE 2-14:
Supply Voltage.
Open-Loop Gain (dB)
TA = 125°C
VDD = 5.5V
-0.5
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Common Mode Input Voltage (V)
FIGURE 2-13:
Input Bias, Offset Currents
vs. Common-mode Input Voltage, with
TA = +85°C.
Input Bias Current
1.0
80
2.5
75
GBWP, VDD = 5.5V
VDD = 2.0V
2.0
1.5
70
65
1.0
PM, VDD = 5.5V
VDD = 2.0V
0.5
0.0
-50
-25
0
25
50
75 100
Ambient Temperature (°C)
60
Phase Margin (°)
Input Bias, Offset Currents
(pA)
55
55
50
125
FIGURE 2-18:
Gain Bandwidth Product,
Phase Margin vs. Temperature.
DS20001810G-page 9
MCP6271/1R/2/3/4/5
Note: Unless otherwise indicated, TA = +25°C, VDD = +2.0V to +5.5V, VSS = GND, VCM = VDD/2, VOUT VDD/2,
VL = VDD/2, RL = 10 k to VL, CL = 60 pF and CS is tied low.
1.8
1.6
VDD = 5.5V
Slew Rate (V/µs)
VDD = 2.0V
1
Frequency (Hz)
1M
1.E+07
100k
1.E+06
10k
1.E+05
1.2
1.0
0.8
VDD = 2.0V
0.6
Rising Edge
0.4
10M
FIGURE 2-19:
Maximum Output Voltage
Swing vs. Frequency.
0.0
-50
0
25
50
75
Ambient Temperature (°C)
FIGURE 2-22:
100
125
Slew Rate vs. Temperature.
25
Input Noise Voltage Density
(nV/¥Hz)
10
5
f = 1 kHz
VDD = 5.0V
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
0
10
0.1
1
10
100 1k
10k 100k 1M
1.E- 1.E+ 1.E+ 1.E+ 1.E+ 1.E+ 1.E+ 1.E+
01
00
01 Frequency
02
03(Hz) 04
05
06
Input Noise Voltage Density
15
1.0
100
20
0.5
1,000
FIGURE 2-20:
vs. Frequency.
-25
0.0
1.E+04
1.E+03
1k
Input Noise Voltage Density
(nV/Hz)
Falling Edge
0.2
0.1
Common Mode Input Voltage (V)
FIGURE 2-23:
Input Noise Voltage Density
vs. Common-mode Input Voltage, with f = 1 kHz.
140
30
25
20
TA = +125°C
TA = +85°C
TA = +25°C
TA = -40°C
15
10
5
Channel-to-Channel
Separation (dB)
35
Ouptut Short-Circuit Current
(mA)
VDD = 5.5V
1.4
-0.5
Maximum Output Voltage
Swing (V P-P )
10
130
120
110
100
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Power Supply Voltage (V)
FIGURE 2-21:
Output Short Circuit Current
vs. Supply Voltage.
DS20001810G-page 10
1
10
Frequency (kHz)
100
FIGURE 2-24:
Channel-to-Channel
Separation vs. Frequency (MCP6272 and
MCP6274).
2019 Microchip Technology Inc.
MCP6271/1R/2/3/4/5
Note: Unless otherwise indicated, TA = +25°C, VDD = +2.0V to +5.5V, VSS = GND, VCM = VDD/2, VOUT VDD/2,
VL = VDD/2, RL = 10 k to VL, CL = 60 pF and CS is tied low.
700
200
Op Amp turns Off
Op Amp turns On
150
Hysteresis
100
50
CS swept
High-to-Low
CS swept
Low-to-High
600
Quiescent Current
(µA/amplifier)
Quiescent Current
(µA/amplifier)
VDD = 2.0V
Hysteresis
500
CS swept
Low-to-High
400
300
200
100
0
Op Amp
turns
On/Off
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Chip Select Voltage (V)
Chip Select Voltage (V)
FIGURE 2-25:
Quiescent Current vs. Chip
Select (CS) Voltage, with VDD = 2.0V (MCP6273
and MCP6275 only).
FIGURE 2-28:
Quiescent Current vs. Chip
Select (CS) Voltage, with VDD = 5.5V (MCP6273
and MCP6275 only).
5.0
5.0
G = +1 V/V
VDD = 5.0V
4.5
4.0
4.5
Output Voltage (V)
Output Voltage (V)
VDD = 5.5V
CS swept
High-to-Low
250
3.5
3.0
2.5
2.0
1.5
1.0
0.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.0
Time (5 µs/div)
Time (5 µs/div)
FIGURE 2-26:
Pulse Response.
Large Signal Non-inverting
FIGURE 2-29:
Response.
Large Signal Inverting Pulse
G = -1 V/V
Output Voltage (10 mV/div)
Output Voltage (10 mV/div)
G = +1 V/V
Time (2 µs/div)
Time (2 µs/div)
FIGURE 2-27:
Pulse Response.
G = -1 V/V
VDD = 5.0V
Small Signal Non-inverting
2019 Microchip Technology Inc.
FIGURE 2-30:
Response.
Small Signal Inverting Pulse
DS20001810G-page 11
MCP6271/1R/2/3/4/5
Note: Unless otherwise indicated, TA = +25°C, VDD = +2.0V to +5.5V, VSS = GND, VCM = VDD/2, VOUT VDD/2,
VL = VDD/2, RL = 10 k to VL, CL = 60 pF and CS is tied low.
CS
2.0
1.5
VOUT
1.0
0.5
VDD = 2.0V
G = +1 V/V
VIN = VSS
Output On
Output High-Z
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Chip Select, Output Voltages
(V)
Chip Select, Output Voltages
(V)
2.5
0.0
Time (5 µs/div)
FIGURE 2-31:
Chip Select (CS) to
Amplifier Output Response Time, with
VDD = 2.0V (MCP6273 and MCP6275 only).
+125°C
+85°C
+25°C
-40°C
Input Voltage (V)
DS20001810G-page 12
Output High-Z
Input Current vs. Input
Output On
FIGURE 2-33:
Chip Select (CS) to
Amplifier Output Response Time, with
VDD = 5,5V (MCP6273 and MCP6275 only).
6
-1.0 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 0.0
FIGURE 2-32:
Voltage.
VOUT
Time (5 µs/div)
Input, Output Voltage (V)
Input Current Magnitude (A)
1.E-02
10m
1.E-03
1m
1.E-04
100µ
1.E-05
10µ
1.E-06
1µ
100n
1.E-07
10n
1.E-08
1n
1.E-09
100p
1.E-10
10p
1.E-11
1p
1.E-12
VDD = 5.5V
G = +1 V/V
VIN = VSS
CS
VDD = 5.0V
G = +2 V/V
5
4
3
2
1
0
VIN
VOUT
-1
Time (1 ms/div)
FIGURE 2-34:
The MCP6271/1R/2/3/4/5
Show no Phase Reversal.
2019 Microchip Technology Inc.
MCP6271/1R/2/3/4/5
3.0
PIN DESCRIPTIONS
Descriptions of the pins are listed in Table 3-1 (single op amps) and Table 3-2 (dual and quad op amps).
TABLE 3-1:
PIN FUNCTION TABLE FOR SINGLE OP AMPS
MCP6271
MCP6271R
MCP6273
Symbol
Description
PDIP, SOIC,
MSOP
SOT-23-5
SOT-23-5
PDIP, SOIC,
MSOP
SOT-23-6
2
4
4
2
4
VIN–
3
3
3
3
3
VIN+
Non-inverting Input
4
2
5
4
2
VSS
Negative Power Supply
6
1
1
6
1
VOUT
Analog Output
7
5
2
7
6
VDD
Positive Power Supply
Inverting Input
—
—
—
8
5
CS
Chip Select
1,5,8
—
—
1,5
—
NC
No Internal Connection
TABLE 3-2:
PIN FUNCTION TABLE FOR DUAL AND QUAD OP AMPS
MCP6272
MCP6274
MCP6275
Symbol
1
1
—
VOUTA
Analog Output (op amp A)
2
2
2
VINA–
Inverting Input (op amp A)
3
3
3
VINA+
Non-inverting Input (op amp A)
8
4
8
VDD
5
5
—
VINB+
Non-inverting Input (op amp B)
6
6
6
VINB–
Inverting Input (op amp B)
7
7
7
VOUTB
Analog Output (op amp B)
—
8
—
VOUTC
Analog Output (op amp C)
—
9
—
VINC–
Inverting Input (op amp C)
—
10
—
VINC+
4
11
4
VSS
3.1
Description
Positive Power Supply
Non-inverting Input (op amp C)
Negative Power Supply
—
12
—
VIND+
Non-inverting Input (op amp D)
—
13
—
VIND–
Inverting Input (op amp D)
—
14
—
VOUTD
—
—
1
VOUTA / VINB+
—
—
5
CS
Analog Output (op amp D)
Analog Output (op amp A)/Non-inverting Input (op amp B)
Chip Select
Analog Outputs
The output pins are low impedance voltage sources.
3.2
Analog Inputs
The non-inverting and inverting inputs are high
impedance CMOS inputs with low bias currents.
3.3
MCP6275’s VOUTA/VINB+ Pin
For the MCP6275 only, the output of op amp A is
connected directly to the non-inverting input of op amp
B; this is the VOUTA/VINB+ pin. This connection makes
it possible to provide a CS pin for duals in 8-pin
packages.
2019 Microchip Technology Inc.
3.4
Chip Select Digital Input
This is a CMOS, Schmitt triggered input that places the
part into a low power mode of operation.
3.5
Power Supply Pins
The positive power supply (VDD) is 2.0V to 6.0V higher
than the negative power supply (VSS). For normal
operation, the other pins are at voltages between VSS
and VDD.
Typically, these parts are used in a single (positive)
supply configuration. In this case, VSS is connected to
ground and VDD is connected to the supply. VDD will
need bypass capacitors.
DS20001810G-page 13
MCP6271/1R/2/3/4/5
4.0
APPLICATION INFORMATION
The MCP6271/1R/2/3/4/5 family of op amps is
manufactured using Microchip’s state of the art CMOS
process, specifically designed for low cost, low power
and general purpose applications. The low supply
voltage, low quiescent current and wide bandwidth
make the MCP6271/1R/2/3/4/5 ideal for battery
powered applications.
dump any currents onto VDD. When implemented as
shown, resistors R1 and R2 also limit the current
through D1 and D2.
VDD
D1
V1
4.1
Rail-to-Rail Inputs
4.1.1
R1
The ESD protection on the inputs can be depicted as
shown in Figure 4-1. This structure was chosen to
protect the input transistors, and to minimize input bias
current (IB). The input ESD diodes clamp the inputs
when they try to go more than one diode drop below
VSS. They also clamp any voltages that go too far
above VDD; their breakdown voltage is high enough to
allow normal operation, and low enough to bypass
quick ESD events within the specified limits.
VDD Bond
Pad
Input
Stage
Bond V –
IN
Pad
VSS Bond
Pad
FIGURE 4-1:
Structures.
Simplified Analog Input ESD
In order to prevent damage and/or improper operation
of these amplifiers, the circuit must limit the currents
(and voltages) at the input pins (see Absolute Maximum Ratings † at the beginning of Section 1.0 “Electrical Characteristics”). Figure 4-2 shows the
recommended approach to protecting these inputs.
The internal ESD diodes prevent the input pins (VIN+
and VIN–) from going too far below ground, and the
resistors R1 and R2 limit the possible current drawn out
of the input pins. Diodes D1 and D2 prevent the input
pins (VIN+ and VIN–) from going too far above VDD, and
DS20001810G-page 14
VOUT
R2
R3
VSS – (minimum expected V1)
2 mA
VSS – (minimum expected V2)
R2 >
2 mA
R1 >
INPUT VOLTAGE AND CURRENT
LIMITS
VIN+ Bond
Pad
MCP627X
V2
PHASE REVERSAL
The input devices are designed to not exhibit phase
inversion when the input pins exceed the supply
voltages. Figure 2-34 shows an input voltage
exceeding both supplies with no phase inversion.
4.1.2
D2
FIGURE 4-2:
Inputs.
Protecting the Analog
It is also possible to connect the diodes to the left of the
resistor R1 and R2. In this case, the currents through
the diodes D1 and D2 need to be limited by some other
mechanism. The resistors then serve as in-rush current
limiters; the DC current into the input pins (VIN+ and
VIN–) should be very small.
A significant amount of current can flow out of the
inputs (through the ESD diodes) when the Commonmode voltage (VCM) is below ground (VSS); see
Figure 2-32. Applications that are high impedance may
need to limit the usable voltage range.
4.1.3
NORMAL OPERATIONS
The input stage of the MCP6271/1R/2/3/4/5 op amps
uses two differential CMOS input stages in parallel.
One operates at low Common-mode input voltage
(VCM and the other at high VCM. With this topology, the
input operates with VCM up to 0.3V past either supply
rail (see Figure 2-7 and Figure 2-10). The input offset
voltage (VOS) is measured at VCM = VSS – 0.3V and
VDD + 0.3V to ensure proper operation.
The transition between the two input stage occurs
when VCM VDD – 1.1V (see Figure 2-3 and Figure 26). For the best distortion and gain linearity, with noninverting gains, avoid this region of operation.
4.2
Rail-to-Rail Output
The output voltage range of the MCP6271/1R/2/3/4/5
op amps is VDD – 15 mV (minimum) and VSS + 15 mV
(maximum) when RL = 10 k is connected to VDD/2
and VDD = 5.5V. Refer to Figure 2-17 for more information.
2019 Microchip Technology Inc.
MCP6271/1R/2/3/4/5
4.3
Capacitive Loads
4.4
Driving large capacitive loads can cause stability
problems for voltage feedback op amps. As the load
capacitance increases, the feedback loop’s phase
margin decreases and the closed-loop bandwidth is
reduced. This produces gain peaking in the frequency
response, with overshoot and ringing in the step
response. A unity gain buffer (G = +1) is the most
sensitive to capacitive loads, though all gains show the
same general behavior.
When driving large capacitive loads with these op
amps (e.g., > 100 pF when G = +1), a small series
resistor at the output (RISO in Figure 4-3) improves the
feedback loop’s phase margin (stability) by making the
output load resistive at higher frequencies. The
bandwidth will be generally lower than the bandwidth
with no capacitive load.
_
RISO
VOUT
MCP627X
VIN
+
CL
MCP6273/5 Chip Select
The MCP6273 and MCP6275 are single and dual op
amps with Chip Select (CS), respectively. When CS is
pulled high, the supply current drops to 0.7 µA (typical)
and flows through the CS pin to VSS. When this
happens, the amplifier output is put into a high
impedance state. By pulling CS low, the amplifier is
enabled. The CS pin has an internal 5 M (typical) pulldown resistor connected to VSS, so it will go low if the
CS pin is left floating. Figure 1-1 shows the output voltage and supply current response to a CS pulse.
4.5
Cascaded Dual Op Amps
(MCP6275)
The MCP6275 is a dual op amp with Chip Select (CS).
The Chip Select input is available on what would be the
non-inverting input of a standard dual op amp (pin 5).
This pin is available because the output of op amp A
connects to the non-inverting input of op amp B, as
shown in Figure 4-5. The Chip Select input, which can
be connected to a microcontroller I/O line, puts the
device in low power mode. Refer to Section 4.4
“MCP6273/5 Chip Select (CS)”.
Figure 4-4 gives recommended RISO values for
different capacitive loads and gains. The x-axis is the
normalized load capacitance (CL/GN), where GN is the
circuit's noise gain. For non-inverting gains, GN and the
Signal Gain are equal. For inverting gains, GN is
1+|Signal Gain| (e.g., –1 V/V gives GN = +2 V/V).
VINB–
VOUTA/VINB+
FIGURE 4-3:
Output Resistor, RISO
stabilizes large capacitive loads.
1
VINA–
VINA+
2
3
6
_
_
+
+
A
B
7
VOUTB
MCP6275
5
CS
Recommended RISO (:)
1,000
FIGURE 4-5:
The output of op amp A is loaded by the input
impedance of op amp B, which is typically
10136 pF, as specified in the DC specification table
(Refer to Section 4.3 “Capacitive Loads” for further
details regarding capacitive loads).
100
GN = 1 V/V
GN = 2 V/V
GN t 4 V/V
10
10
100
1,000
Cascaded Gain Amplifier.
10,000
Normalized Load Capacitance; CL / GN (pF)
FIGURE 4-4:
Recommended RISO Values
for Capacitive Loads.
The Common-mode input range of these op amps is
specified in the data sheet as VSS – 300 mV and
VDD + 300 mV. However, since the output of op amp A
is limited to VOL and VOH (20 mV from the rails with a
10 k load), the non-inverting input range of op amp B
is limited to the Common-mode input range of
VSS + 20 mV and VDD – 20 mV.
After selecting RISO for your circuit, double check the
resulting frequency response peaking and step
response overshoot. Modify RISO's value until the
response is reasonable. Bench evaluation and
simulations with the MCP6271/1R/2/3/4/5 SPICE
macro model are helpful.
2019 Microchip Technology Inc.
DS20001810G-page 15
MCP6271/1R/2/3/4/5
4.6
Unused Amplifiers
VIN–
An unused op amp in a quad package (MCP6274)
should be configured as shown in Figure 4-6. These
circuits prevent the output from toggling and causing
crosstalk. In Circuit A, R1 and R2 produce a voltage
within its output voltage range (VOH, VOL). The op amp
buffers this voltage, which can be used elsewhere in
the circuit. Circuit B uses the minimum number of
components and operates as a comparator.
VIN+
VSS
Guard Ring
¼ MCP6274 (A)
¼ MCP6274 (B)
VDD
VDD
1.
VDD
R1
+
+
R2
VREF
–
–
R2
V REF = V DD -----------------R1 + R2
FIGURE 4-6:
4.7
Unused Op Amps.
Supply Bypass
With this family of operational amplifiers, the power
supply pin (VDD for single supply) should have a local
bypass capacitor (i.e., 0.01 µF to 0.1 µF) within 2 mm
for good, high frequency performance. It also needs a
bulk capacitor (i.e., 1 µF or larger) within 100 mm to
provide large, slow currents. This bulk capacitor can be
shared with nearby analog parts.
4.8
FIGURE 4-7:
for Inverting Gain.
2.
Example Guard Ring Layout
For Inverting Gain and Transimpedance
Amplifiers (convert current to voltage, such as
photo detectors):
a) Connect the guard ring to the non-inverting
input pin (VIN+). This biases the guard ring
to the same reference voltage as the op
amp (e.g., VDD/2 or ground).
b) Connect the inverting pin (VIN–) to the input
with a wire that does not touch the PCB
surface.
Non-inverting Gain and Unity Gain Buffer:
a) Connect the non-inverting pin (VIN+) to the
input with a wire that does not touch the
PCB surface.
b) Connect the guard ring to the inverting input
pin (VIN–). This biases the guard ring to the
Common-mode input voltage.
PCB Surface Leakage
In applications where low input bias current is critical,
Printed Circuit Board (PCB) surface leakage effects
need to be considered. Surface leakage is caused by
humidity, dust or other contamination on the board.
Under low humidity conditions, a typical resistance
between nearby traces is 1012. A 5V difference would
cause 5 pA of current to flow. This is greater than the
MCP6271/1R/2/3/4/5 family’s bias current at 25°C
(1 pA, typical).
The easiest way to reduce surface leakage is to use a
guard ring around sensitive pins (or traces). The guard
ring is biased at the same voltage as the sensitive pin.
An example of this type of layout is illustrated in
Figure 4-7.
DS20001810G-page 16
2019 Microchip Technology Inc.
MCP6271/1R/2/3/4/5
4.9
Application Circuits
4.9.1
4.9.2
ACTIVE FULL-WAVE RECTIFIER
The MCP6271/1R/2/3/4/5 family of amplifiers can be
used in applications such as an Active Full-Wave
Rectifier or an Absolute Value circuit, as shown in
Figure 4-8. The amplifier and feedback loops in this
active voltage rectifier circuit eliminate the diode drop
problem that exists in a passive voltage rectifier. This
circuit behaves as a follower (the output follows the
input) as long as the input signal is more positive than
the reference voltage. If the input signal is more
negative than the reference voltage, however, the
circuit behaves as an inverting amplifier. Therefore, the
output voltage will always be above the reference
voltage, regardless of the input signal.
LOSSY NON-INVERTING
INTEGRATOR
The non-inverting integrator shown in Figure 4-9 is
easy to build. It saves one op amp over the typical
Miller integrator plus inverting amplifier configuration.
The phase accuracy of this integrator depends on the
matching of the input and feedback resistor-capacitor
time constants. RF makes this a lossy integrator (it has
finite gain at DC) and stable by itself.
VIN
R1
+
C1
MCP6271
_
RF
R2
C2
R1
VIN
RF R2
–
R3
R4
Op Amp B
VOUT
+
1/2
MCP6272
R5
VREF
D2
D1
R2
R 1 C 1 = R 2 ||R F C 2
V OUT
1 ------------- ------------------
V IN
s R1 C1
FIGURE 4-9:
1
f --------------------------------------------------2R 1 C 1 1 + R F R 2
Non-Inverting Integrator.
R1 = R2 = R3
–
VREF
VOUT
Op Amp A
+
1/2
MCP6272
V D1
R 4 < R 3 1 – ----------------------------
V REF – V SS
R2 R4
R 5 = -----------2R 3
Input
Output
VREF
VREF
time
FIGURE 4-8:
time
Active Full-wave Rectifier.
The design equations give a gain of ±1 from VIN to
VOUT, and produce rail-to-rail outputs.
2019 Microchip Technology Inc.
DS20001810G-page 17
MCP6271/1R/2/3/4/5
4.9.3
CASCADED OP AMP
APPLICATIONS
R4
The MCP6275 provides the flexibility of Low power
mode for dual op amps in an 8-pin package. The
MCP6275 eliminates the added cost and space in a
battery powered application by using two single op
amps with Chip Select (CS) lines or a 10-pin device
with one CS line for both op amps. Since the two op
amps are internally cascaded, this device cannot be
used in circuits that require active or passive elements
between the two op amps. However, there are several
applications where this op amp configuration with a CS
line becomes suitable. The circuits below show
possible applications for this device.
4.9.3.1
With the cascaded op amp configuration, op amp B can
be used to isolate the load from op amp A. In
applications where op amp A is driving capacitive or
low resistive loads in the feedback loop (such as an
integrator or filter circuit) the op amp may not have
sufficient source current to drive the load. In this case,
op amp B can be used as a buffer.
–
+
+
A
–
VOUTB
B
MCP6275
+
A
MCP6275
Cascaded Gain Circuit
Difference Amplifier
VIN2
R2
R2
R1
–
+
R4
+
A
Where:
GA
=
op amp A gain
GB
=
op amp B gain
VOSA
=
op amp A input offset voltage
VOSB
=
op amp B input offset voltage
Therefore, it is recommended that you set most of the
gain with op amp A and use op amp B with relatively
small gain (e.g., a unity gain buffer).
DS20001810G-page 18
B
VOUT
MCP6275
R1
CS
FIGURE 4-12:
V OUT = V IN G A G B + V OSA G A G B + V OSB G B
R3
–
Isolating the Load with a
Figure 4-11 shows a cascaded gain circuit configuration with Chip Select. Op amps A and B are configured
in a non-inverting amplifier configuration. In this
configuration, it is important to note that the input offset
voltage of op amp A is amplified by the gain of op amp
A and B, as shown below:
VOUT
B
Figure 4-12 shows op amp A configured as a difference
amplifier with Chip Select. In this configuration, it is
recommended that well matched resistors (e.g., 0.1%)
be used to increase the Common-mode Rejection
Ratio (CMRR). Op amp B can be used to provide additional gain and isolate the load from the difference
amplifier.
Load
Cascaded Gain
R1
–
FIGURE 4-11:
Configuration.
CS
4.9.3.2
R2
CS
VIN1
FIGURE 4-10:
Buffer.
+
VIN
4.9.3.3
Load Isolation
–
R3
4.9.3.4
Difference Amplifier Circuit.
Inverting Integrator with Active
Compensation and Chip Select
Figure 4-13 uses an active compensator (op amp B) to
compensate for the non-ideal op amp characteristics
introduced at higher frequencies. This circuit uses
op amp B as a unity gain buffer to isolate the
integration capacitor C1 from op amp A and drives the
capacitor with a low impedance source. Since both op
amps are matched very well, they provide a high quality
integrator.
VIN
C1
R1
B
–
+
–
+
VOUT
A
MCP6275
CS
2019 Microchip Technology Inc.
MCP6271/1R/2/3/4/5
FIGURE 4-13:
Compensation.
4.9.3.5
Integrator Circuit with Active
Second Order MFB with an Extra
Pole-Zero Pair
Figure 4-14 is a second order multiple feedback lowpass filter with Chip Select. Use the FilterLab® software
from Microchip Technology Inc. to determine the R and
C values for op amp A’s second order filter. Op amp B
can be used to add a pole-zero pair using C3, R6 and
R7.
C3
R6
R7
R1
VIN
R3
VDD
–
C1
R2
–
R5
+
+
4.9.3.7
The low-pass filter shown in Figure 4-16 does not
require external capacitors and uses only three
external resistors; the op amp’s GBWP sets the corner
frequency. R1 and R2 are used to set the circuit gain. R3
is used to set the Q. To avoid gain peaking in the
frequency response, Q needs to be low (lower values
need to be selected for R3). Note that the amplifier
bandwidth varies greatly over temperature and
process. This configuration, however, provides a low
cost solution for applications with high bandwidth
requirements.
VIN
R1
R2
–
VOUT
B
Capacitorless Second Order
Low-Pass filter with Chip Select
+
R3
A
+
–
VREF
A
B
VOUT
MCP6275
MCP6275
R4
CS
CS
FIGURE 4-14:
Second Order Multiple
Feedback Low-Pass Filter with an Extra PoleZero Pair.
4.9.3.6
FIGURE 4-16:
Capacitorless Second Order
Low-Pass Filter with Chip Select.
Second Order Sallen-Key with an
Extra Pole-Zero Pair
Figure 4-15 is a second order Sallen-Key low-pass
filter with Chip Select. Use the Filterlab® software from
Microchip to determine the R and C values for
op amp A’s second order filter. Op amp B can be used
to add a pole-zero pair using C3, R5 and R6.
C3
R5
VIN R4
R3
C2
R6
R1
R2
–
+
–
B
+
A
VOUT
MCP6275
C1
CS
FIGURE 4-15:
Second Order Sallen-Key
Low-Pass Filter with an Extra Pole-Zero Pair and
Chip Select.
2019 Microchip Technology Inc.
DS20001810G-page 19
MCP6271/1R/2/3/4/5
NOTES:
DS20001810G-page 20
2019 Microchip Technology Inc.
MCP6271/1R/2/3/4/5
5.0
DESIGN TOOLS
Microchip provides the basic design tools needed for
the MCP6271/1R/2/3/4/5 family of op amps.
5.1
SPICE Macro Model
The latest SPICE macro model for the MCP6271/1R/2/
3/4/5 op amps is available on the Microchip web site at
www.microchip.com. This model is intended to be an
initial design tool that works well in the op amp’s linear
region of operation over the temperature range. See
the model file for information on its capabilities.
Bench testing is a very important part of any design and
cannot be replaced with simulations. Also, simulation
results using this macro model need to be validated by
comparing them to the data sheet specifications and
characteristic curves.
5.2
FilterLab® Software
Microchip’s FilterLab® software is an innovative
software tool that simplifies analog active filter (using
op amps) design. Available at no cost from the
Microchip web site at www.microchip.com/filterlab, the
FilterLab design tool provides full schematic diagrams
of the filter circuit with component values. It also
outputs the filter circuit in SPICE format, which can be
used with the macro model to simulate actual filter
performance.
5.3
Mindi™ Circuit Designer &
Simulator
Microchip’s Mindi™ Circuit Designer & Simulator aids
in the design of various circuits useful for active filter,
amplifier and power-management applications. It is a
free online circuit designer & simulator available from
the Microchip web site at www.microchip.com/mindi.
This interactive circuit designer & simulator enables
designers to quickly generate circuit diagrams,
simulate circuits. Circuits developed using the Mindi
Circuit Designer & Simulator can be downloaded to a
personal computer or workstation.
5.4
5.5
Analog Demonstration and
Evaluation Boards
Microchip offers a broad spectrum of Analog
Demonstration and Evaluation Boards that are
designed to help you achieve faster time to market. For
a complete listing of these boards and their
corresponding user’s guides and technical information,
visit the Microchip web site at www.microchip.com/
analogtools.
Two of our boards that are especially useful are:
• P/N SOIC8EV: 8-Pin SOIC/MSOP/TSSOP/DIP
Evaluation Board
• P/N SOIC14EV: 14-Pin SOIC/TSSOP/DIP Evaluation Board
5.6
Application Notes
The following Microchip Application Notes are available on the Microchip web site at www.microchip. com/
appnotes and are recommended as supplemental reference resources.
ADN003: “Select the Right Operational Amplifier for
your Filtering Circuits,” DS21821
AN722: “Operational Amplifier Topologies and DC
Specifications,” DS00722
AN723: “Operational Amplifier AC Specifications and
Applications”, DS00723
AN884: “Driving Capacitive Loads With Op Amps,”
DS00884
AN990: “Analog Sensor Conditioning Circuits – An
Overview,” DS00990
These application notes and others are listed in the
design guide:
“Signal Chain Design Guide,” DS21825
MAPS (Microchip Advanced Part
Selector)
MAPS is a software tool that helps semiconductor
professionals efficiently identify Microchip devices that
fit a particular design requirement. Available at no cost
from the Microchip web site at www.microchip.com/
maps, the MAPS is an overall selection tool for
Microchip’s product portfolio that includes Analog,
Memory, MCUs and DSCs. Using this tool you can
define a filter to sort features for a parametric search of
devices and export side-by-side technical comparison
reports. Helpful links are also provided for Data sheets,
Purchase, and Sampling of Microchip parts.
2019 Microchip Technology Inc.
DS20001810G-page 21
MCP6271/1R/2/3/4/5
NOTES:
DS20001810G-page 22
2019 Microchip Technology Inc.
MCP6271/1R/2/3/4/5
6.0
PACKAGING INFORMATION
6.1
Package Marking Information
Example:
5-Lead SOT-23 (MCP6271 and MCP6271R)
Device
XXNN
Code
MCP6271
CGNN
MCP6271R
ETNN
CG25
Note: Applies to 5-Lead SOT-23
Example:
6-Lead SOT-23 (MCP6273)
XXNN
CK25
8-Lead MSOP
Example:
6271E
644256
8-Lead PDIP (300 mil)
XXXXXXXX
XXXXXNNN
YYWW
MCP6271
E/P256
0437
Legend: XX...X
Y
YY
WW
NNN
e3
*
Note:
Example:
OR
MCP6271
E/P^^256
e3
0644
Customer-specific information
Year code (last digit of calendar year)
Year code (last 2 digits of calendar year)
Week code (week of January 1 is week ‘01’)
Alphanumeric traceability code
Pb-free JEDEC designator for Matte Tin (Sn)
This package is Pb-free. The Pb-free JEDEC designator ( e3 )
can be found on the outer packaging for this package.
In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.
2019 Microchip Technology Inc.
DS20001810G-page 23
MCP6271/1R/2/3/4/5
Package Marking Information (Continued)
8-Lead SOIC (150 mil)
XXXXXXXX
XXXXYYWW
NNN
14-Lead PDIP (300 mil) (MCP6274)
XXXXXXXXXXXXXX
XXXXXXXXXXXXXX
YYWWNNN
Example:
MCP6271
E/SN0437
256
MCP6271E
e3
SN^^0644
256
OR
Example:
MCP6274-E/P
0437256
OR
MCP6274
e3
E/P^^
0644256
14-Lead SOIC (150 mil) (MCP6274)
Example:
XXXXXXXXXX
XXXXXXXXXX
YYWWNNN
MCP6274ESL
0437256
OR
MCP6274
e3
E/SL^^
0644256
14-Lead TSSOP (MCP6274)
XXXXXX
YYWW
NNN
DS20001810G-page 24
Example:
6274EST
0437
256
2019 Microchip Technology Inc.
MCP6271/1R/2/3/4/5
5-Lead Plastic Small Outline Transistor (OT) [SOT23]
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
0.20 C 2X
D
e1
A
D
N
E/2
E1/2
E1
E
(DATUM D)
(DATUM A-B)
0.15 C D
2X
NOTE 1
1
2
e
B
NX b
0.20
C A-B D
TOP VIEW
A
A A2
0.20 C
SEATING PLANE
A
SEE SHEET 2
A1
C
SIDE VIEW
Microchip Technology Drawing C04-091-OT Rev E Sheet 1 of 2
2019 Microchip Technology Inc.
DS20001810G-page 25
MCP6271/1R/2/3/4/5
5-Lead Plastic Small Outline Transistor (OT) [SOT23]
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
c
T
L
L1
VIEW A-A
SHEET 1
Units
Dimension Limits
Number of Pins
N
e
Pitch
e1
Outside lead pitch
Overall Height
A
Molded Package Thickness
A2
Standoff
A1
E
Overall Width
E1
Molded Package Width
D
Overall Length
L
Foot Length
Footprint
L1
I
Foot Angle
c
Lead Thickness
b
Lead Width
MIN
0.90
0.89
-
0.30
0°
0.08
0.20
MILLIMETERS
NOM
5
0.95 BSC
1.90 BSC
2.80 BSC
1.60 BSC
2.90 BSC
0.60 REF
-
MAX
1.45
1.30
0.15
0.60
10°
0.26
0.51
Notes:
1. Dimensions D and E1 do not include mold flash or protrusions. Mold flash or
protrusions shall not exceed 0.25mm per side.
2. Dimensioning and tolerancing per ASME Y14.5M
BSC: Basic Dimension. Theoretically exact value shown without tolerances.
REF: Reference Dimension, usually without tolerance, for information purposes only.
Microchip Technology Drawing C04-091-OT Rev E Sheet 2 of 2
DS20001810G-page 26
2019 Microchip Technology Inc.
MCP6271/1R/2/3/4/5
5-Lead Plastic Small Outline Transistor (OT) [SOT23]
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
X
SILK SCREEN
5
Y
Z
C
G
1
2
E
GX
RECOMMENDED LAND PATTERN
Units
Dimension Limits
E
Contact Pitch
C
Contact Pad Spacing
X
Contact Pad Width (X5)
Contact Pad Length (X5)
Y
Distance Between Pads
G
Distance Between Pads
GX
Overall Width
Z
MIN
MILLIMETERS
NOM
0.95 BSC
2.80
MAX
0.60
1.10
1.70
0.35
3.90
Notes:
1. Dimensioning and tolerancing per ASME Y14.5M
BSC: Basic Dimension. Theoretically exact value shown without tolerances.
Microchip Technology Drawing No. C04-2091B [OT]
2019 Microchip Technology Inc.
DS20001810G-page 27
MCP6271/1R/2/3/4/5
6-Lead Plastic Small Outline Transistor (CH, CHY) [SOT-23]
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
2X
0.15 C A-B
D
e1
A
D
E
2
E1
E
E1
2
2X
0.15 C D
2X
0.20 C A-B
e
6X b
B
0.20
C A-B D
TOP VIEW
C
A
A2
SEATING PLANE
6X
A1
0.10 C
SIDE VIEW
R1
L2
R
c
GAUGE PLANE
L
Ĭ
(L1)
END VIEW
Microchip Technology Drawing C04-028C (CH) Sheet 1 of 2
DS20001810G-page 28
2019 Microchip Technology Inc.
MCP6271/1R/2/3/4/5
6-Lead Plastic Small Outline Transistor (CH, CHY) [SOT-23]
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
Units
Dimension Limits
N
Number of Leads
e
Pitch
Outside lead pitch
e1
A
Overall Height
Molded Package Thickness
A2
Standoff
A1
Overall Width
E
Molded Package Width
E1
Overall Length
D
Foot Length
L
Footprint
L1
Seating Plane to Gauge Plane
L1
φ
Foot Angle
c
Lead Thickness
Lead Width
b
MIN
0.90
0.89
0.00
0.30
0°
0.08
0.20
MILLIMETERS
NOM
6
0.95 BSC
1.90 BSC
1.15
2.80 BSC
1.60 BSC
2.90 BSC
0.45
0.60 REF
0.25 BSC
-
MAX
1.45
1.30
0.15
0.60
10°
0.26
0.51
Notes:
1. Dimensions D and E1 do not include mold flash or protrusions. Mold flash or
protrusions shall not exceed 0.25mm per side.
2. Dimensioning and tolerancing per ASME Y14.5M
BSC: Basic Dimension. Theoretically exact value shown without tolerances.
REF: Reference Dimension, usually without tolerance, for information purposes only.
Microchip Technology Drawing C04-028C (CH) Sheet 2 of 2
2019 Microchip Technology Inc.
DS20001810G-page 29
MCP6271/1R/2/3/4/5
6-Lead Plastic Small Outline Transistor (CH, CHY) [SOT-23]
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
GX
Y
Z
C G
G
SILK SCREEN
X
E
RECOMMENDED LAND PATTERN
Units
Dimension Limits
E
Contact Pitch
C
Contact Pad Spacing
X
Contact Pad Width (X3)
Y
Contact Pad Length (X3)
G
Distance Between Pads
Distance Between Pads
GX
Z
Overall Width
MIN
MILLIMETERS
NOM
0.95 BSC
2.80
MAX
0.60
1.10
1.70
0.35
3.90
Notes:
1. Dimensioning and tolerancing per ASME Y14.5M
BSC: Basic Dimension. Theoretically exact value shown without tolerances.
Microchip Technology Drawing No. C04-2028B (CH)
DS20001810G-page 30
2019 Microchip Technology Inc.
MCP6271/1R/2/3/4/5
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
2019 Microchip Technology Inc.
DS20001810G-page 31
MCP6271/1R/2/3/4/5
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
DS20001810G-page 32
2019 Microchip Technology Inc.
MCP6271/1R/2/3/4/5
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
2019 Microchip Technology Inc.
DS20001810G-page 33
MCP6271/1R/2/3/4/5
8-Lead Plastic Dual In-Line (P) - 300 mil Body [PDIP]
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
D
A
N
B
E1
NOTE 1
1
2
TOP VIEW
E
C
A2
A
PLANE
L
c
A1
e
eB
8X b1
8X b
.010
C
SIDE VIEW
END VIEW
Microchip Technology Drawing No. C04-018-P Rev E Sheet 1 of 2
DS20001810G-page 34
2019 Microchip Technology Inc.
MCP6271/1R/2/3/4/5
8-Lead Plastic Dual In-Line (P) - 300 mil Body [PDIP]
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
ALTERNATE LEAD DESIGN
(NOTE 5)
DATUM A
DATUM A
b
b
e
2
e
2
e
e
Units
Dimension Limits
Number of Pins
N
e
Pitch
Top to Seating Plane
A
Molded Package Thickness
A2
Base to Seating Plane
A1
Shoulder to Shoulder Width
E
Molded Package Width
E1
Overall Length
D
Tip to Seating Plane
L
c
Lead Thickness
b1
Upper Lead Width
b
Lower Lead Width
eB
Overall Row Spacing
§
MIN
.115
.015
.290
.240
.348
.115
.008
.040
.014
-
INCHES
NOM
8
.100 BSC
.130
.310
.250
.365
.130
.010
.060
.018
-
MAX
.210
.195
.325
.280
.400
.150
.015
.070
.022
.430
Notes:
1. Pin 1 visual index feature may vary, but must be located within the hatched area.
2. § Significant Characteristic
3. Dimensions D and E1 do not include mold flash or protrusions. Mold flash or
protrusions shall not exceed .010" per side.
4. Dimensioning and tolerancing per ASME Y14.5M
BSC: Basic Dimension. Theoretically exact value shown without tolerances.
5. Lead design above seating plane may vary, based on assembly vendor.
Microchip Technology Drawing No. C04-018-P Rev E Sheet 2 of 2
2019 Microchip Technology Inc.
DS20001810G-page 35
MCP6271/1R/2/3/4/5
8-Lead Plastic Small Outline (SN) - Narrow, 3.90 mm (.150 In.) Body [SOIC]
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
2X
0.10 C A–B
D
A
D
NOTE 5
N
E
2
E1
2
E1
E
NOTE 1
2
1
e
B
NX b
0.25
C A–B D
NOTE 5
TOP VIEW
0.10 C
C
A A2
SEATING
PLANE
8X
A1
SIDE VIEW
0.10 C
h
R0.13
h
R0.13
H
SEE VIEW C
VIEW A–A
0.23
L
(L1)
VIEW C
Microchip Technology Drawing No. C04-057-SN Rev E Sheet 1 of 2
DS20001810G-page 36
2019 Microchip Technology Inc.
MCP6271/1R/2/3/4/5
8-Lead Plastic Small Outline (SN) - Narrow, 3.90 mm (.150 In.) Body [SOIC]
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
Units
Dimension Limits
Number of Pins
N
e
Pitch
Overall Height
A
Molded Package Thickness
A2
§
Standoff
A1
Overall Width
E
Molded Package Width
E1
Overall Length
D
Chamfer (Optional)
h
Foot Length
L
L1
Footprint
Foot Angle
c
Lead Thickness
b
Lead Width
Mold Draft Angle Top
Mold Draft Angle Bottom
MIN
1.25
0.10
0.25
0.40
0°
0.17
0.31
5°
5°
MILLIMETERS
NOM
8
1.27 BSC
6.00 BSC
3.90 BSC
4.90 BSC
1.04 REF
-
MAX
1.75
0.25
0.50
1.27
8°
0.25
0.51
15°
15°
Notes:
1. Pin 1 visual index feature may vary, but must be located within the hatched area.
2. § Significant Characteristic
3. Dimensions D and E1 do not include mold flash or protrusions. Mold flash or
protrusions shall not exceed 0.15mm per side.
4. Dimensioning and tolerancing per ASME Y14.5M
BSC: Basic Dimension. Theoretically exact value shown without tolerances.
REF: Reference Dimension, usually without tolerance, for information purposes only.
5. Datums A & B to be determined at Datum H.
Microchip Technology Drawing No. C04-057-SN Rev E Sheet 2 of 2
2019 Microchip Technology Inc.
DS20001810G-page 37
MCP6271/1R/2/3/4/5
8-Lead Plastic Small Outline (SN) - Narrow, 3.90 mm Body [SOIC]
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
SILK SCREEN
C
Y1
X1
E
RECOMMENDED LAND PATTERN
Units
Dimension Limits
E
Contact Pitch
Contact Pad Spacing
C
Contact Pad Width (X8)
X1
Contact Pad Length (X8)
Y1
MIN
MILLIMETERS
NOM
1.27 BSC
5.40
MAX
0.60
1.55
Notes:
1. Dimensioning and tolerancing per ASME Y14.5M
BSC: Basic Dimension. Theoretically exact value shown without tolerances.
Microchip Technology Drawing C04-2057-SN Rev E
DS20001810G-page 38
2019 Microchip Technology Inc.
MCP6271/1R/2/3/4/5
J
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K%&
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N
NOTE 1
E1
1
3
2
D
E
A2
A
L
A1
c
b1
b
e
eB
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