MSC010SDA070K
Zero Recovery Silicon Carbide Schottky Diode
Product Overview
The silicon carbide (SiC) power Schottky barrier diode (SBD) product line from Microchip increases the performance
over silicon diode solutions while lowering the total cost of ownership for high-voltage applications. The
MSC010SDA070K device is a 700 V, 10 A SiC SBD in a two-lead TO-220 package.
Features
The following are key features of the MSC010SDA070K device:
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No reverse recovery
Low forward voltage
Low leakage current
Avalanche-energy rated
RoHS compliant
Benefits
The following are benefits of the MSC010SDA070K device:
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High switching frequency
Low switching losses
Low noise (EMI) switching
Higher reliability systems
Increased system power density
Applications
The MSC010SDA070K device is designed for the following applications:
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Power factor correction (PFC)
Anti-parallel diode
– Switch-mode power supply
– Inverters/converters
– Motor controllers
Freewheeling diode
– Switch-mode power supply
– Inverters/converters
Snubber/clamp diode
© 2021 Microchip Technology Inc.
Datasheet
DS-00003907A-page 1
MSC010SDA070K
Device Specifications
1.
Device Specifications
This section shows the specifications of the MSC010SDA070K device.
1.1
Absolute Maximum Ratings
The following table shows the absolute maximum ratings of the MSC010SDA070K device. TC = 25 °C unless
otherwise specified.
Table 1-1. Absolute Maximum Ratings
Symbol
Parameter
Ratings
Unit
VR
Maximum DC reverse voltage
700
V
VRRM
Maximum peak repetitive reverse voltage
VRWM
Maximum working peak reverse voltage
IF
Maximum DC forward current
TC = 25 °C
24
A
TC = 135 °C
10
TC = 145 °C
8
IFRM
Repetitive peak forward surge current (TC = 25 °C, tp = 8.3 ms, half
sine wave)
34
IFSM
Non-repetitive forward surge current (TC = 25 °C, tp = 8.3 ms, half
sine wave)
58
PTOT
Total power dissipation
TC = 25 °C
83
TC = 110 °C
36
EAS
Single-pulse avalanche energy (starting TJ = 25 °C,
peak IL = 10 A)
100
W
mJ
The following table shows the thermal and mechanical characteristics of the MSC010SDA070K device.
Table 1-2. Thermal and Mechanical Characteristics
Symbol
Characteristic/Test Conditions
Min
RθJC
Junction-to-case thermal resistance
TJ, TSTG
Operating junction and storage temperature
range
TL
Lead temperature for 10 seconds
Wt
Package weight
Max
Unit
1.30
1.80
°C/W
175
°C
–55
300
Mounting torque, 6-32 or M3 screw
© 2021 Microchip Technology Inc.
Typ
Datasheet
0.07
oz
1.9
g
10
lbf-in
1.1
N-m
DS-00003907A-page 2
MSC010SDA070K
Device Specifications
1.2
Electrical Performance
The following table shows the static characteristics of the MSC010SDA070K device. TJ = 25 °C unless otherwise
specified.
Table 1-3. Static Characteristics
Symbol
Characteristic
Test Conditions
VF
Forward voltage
IRM
1.3
Reverse leakage current
Min
Typ
Max
Unit
IF = 10 A, TJ = 25 °C
1.5
1.8
V
IF = 10 A, TJ = 175 °C
1.8
VR = 700 V, TJ = 25 °C
3
200
µA
VR = 700 V, TJ = 175 °C
15
QC
Total capacitive charge
VR = 400 V
27
nC
CJ
Junction capacitance
VR = 1 V, f = 1 MHz
353
pF
VR = 200 V, f = 1 MHz
54
VR = 400 V, f = 1 MHz
46
Typical Performance Curves
This section shows the typical performance curves of the MSC010SDA070K device.
Figure 1-1. Maximum Transient Thermal Impedance
© 2021 Microchip Technology Inc.
Datasheet
DS-00003907A-page 3
MSC010SDA070K
Device Specifications
Figure 1-2. Forward Current vs. Forward Voltage
Figure 1-3. Max. Forward Current vs. Case Temp.
Figure 1-4. Max. Power Dissipation vs. Case Temp.
Figure 1-5. Reverse Current vs. Reverse Voltage
© 2021 Microchip Technology Inc.
Datasheet
DS-00003907A-page 4
MSC010SDA070K
Device Specifications
Figure 1-6. Total Charge vs. Reverse Voltage
© 2021 Microchip Technology Inc.
Figure 1-7. Capacitance vs. Reverse Voltage
Datasheet
DS-00003907A-page 5
MSC010SDA070K
Package Specification
2.
Package Specification
This section shows the package specification of the MSC010SDA070K device.
2.1
Package Outline Drawing
The following figure illustrates the TO-220 package outline of the MSC010SDA070K device.
Figure 2-1. Package Outline Drawing
The following table shows the TO-220 dimensions and should be used in conjunction with the package outline
drawing.
© 2021 Microchip Technology Inc.
Datasheet
DS-00003907A-page 6
MSC010SDA070K
Package Specification
Table 2-1. TO-220 Dimensions
Symbol
Min (mm)
Max (mm)
Min (in.)
Max (in.)
A
4.32
4.57
0.170
0.180
B
1.14
1.40
0.045
0.055
C
2.50
2.74
0.098
0.108
D
0.36
0.53
0.014
0.021
E
2.65
3.05
0.104
0.120
F
3.60
3.96
0.142
0.156
G
14.50
15.60
0.571
0.614
H
2.39
3.65
0.094
0.144
I
6.00
6.80
0.236
0.268
J
8.40
9.00
0.331
0.354
K
13.00
14.00
0.512
0.051
L
1.23
1.39
0.048
0.055
M
0.69
0.88
0.027
0.035
N
10.00
10.36
0.394
0.408
O
7.57
7.90
0.298
0.311
P
12.20
13.10
0.480
0.516
Q
2.54 BSC (nom.)
Terminal 1
Cathode
Terminal 2
Anode
Terminal 3
Cathode
© 2021 Microchip Technology Inc.
0.100 BSC (nom.)
Datasheet
DS-00003907A-page 7
MSC010SDA070K
Revision History
3.
Revision History
Table 3-1. Revision History
Revision
Date
Description
A
03/2021
Document migrated from Microsemi
template to Microchip template;
Assigned Microchip literature number
DS-00003907A,which replaces the
previous Microsemi literature number
053-4083.
Initial release (Microsemi Revision A) 12/2017
© 2021 Microchip Technology Inc.
Document created.
Datasheet
DS-00003907A-page 8
MSC010SDA070K
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© 2021 Microchip Technology Inc.
Datasheet
DS-00003907A-page 9
MSC010SDA070K
Legal Notice
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ISBN: 978-1-5224-7905-5
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Datasheet
DS-00003907A-page 10
MSC010SDA070K
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Datasheet
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