MSMBJSAC50E3

TECHNICAL DATA SHEET Gort Road Business Park, Ennis, Co. Clare, Ireland. Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803 Website: http://www.microsemi.com - High Reliability controlled devices - Unidirectional construction - Available J-bend termination - Selections for 5.0 to 75 V standoff voltages (VWM) SURFACE MOUNT 500 Watt Low Capacitance Transient Voltage Suppressor DEVICES MSMBJSAC5.0 thru MSMBJSAC75, e3 LEVELS M, MA, MX, MXL FEATURES         High reliability controlled devices with wafer fabrication and assembly lot traceability 100 % surge tested devices Optional up screening available by replacing the M prefix with MA, MX or MXL. These prefixes specify various screening and conformance inspection options based on MIL-PRF-19500. Refer to MicroNote 129 for more details on the screening options Low capacitance performance of 30pF Suppresses transients up to 500 W Peak Pulse Power @ 10/1000 Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B RoHS compliant devices available by adding an “e3” suffix 3σ lot norm screening performed on Standby Current I D DO-214AA APPLICATIONS / BENEFITS      Low Capacitance for data-line protection to 10 MHz Protection for aircraft fast data rate lines per select waveforms in RTCA/DO-160F (see MicroNote 130 for Waveform 4 and 5A capability) & ARINC 429 with bit rates of 100 kb/s (per ARINC 429, Part 1, par. 2.4.1.1) ESD and EFT protection per IEC61000-4-2 and IEC61000-4-4 respectively Secondary lightning protection per IEC61000-4-5 with 42 Ohms source impedance: o Class 1: MSMBJSAC5.0 to MSMBJSAC75 o Class 2: MSMBJSAC5.0 to MSMBJSAC45 o Class 3: MSMBJSAC5.0 to MSMBJSAC22 o Class 4: MSMBJSAC5.0 to MSMBJSAC10 Secondary lightning protection per IEC61000-4-5 with 12 Ohms source impedance o Class 1: MSMBJSAC5.0 to MSMBJSAC26 o Class 2: MSMBJSAC5.0 to MSMBJSAC15 o Class 3: MSMBJSAC5.0 to MSMBJSAC7.0 MAXIMUM RATINGS      Peak Pulse Power dissipation at 25 ºC: 500 watts at 10/1000 μs with impulse repetition rate (duty factor) of 0.01 % or less* tclamping (0 volts to VBR min.): < 5 ns theoretical for unidirectional Operating and Storage temperature: -65 °C to +150 °C Steady-State Power dissipation*: 2.5 watts at TL = +75 ºC Solder temperatures: 260 ºC for 10 s (maximum) * TVS devices are not typically used for dc power dissipation and are instead operated < VWM (rated standoff voltage) except for transients that briefly drive the device into avalanche breakdown (V BR to VC region) of the TVS element. Also see Figures 5 and 6 for further protection details in rated peak pulse power for unidirectional and bidirectional configurations respectively. RF01021 Rev A, October 2010 High Reliability Product Group Page 1 of 4 TECHNICAL DATA SHEET Gort Road Business Park, Ennis, Co. Clare, Ireland. Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803 Website: http://www.microsemi.com ___________________________________________________________________________________________________________________________________ MECHANICAL AND PACKAGING       Void-free transfer molded thermosetting epoxy body meeting UL94V-0 J-bend tin-lead (90 % Sn, 10 % Pb) or RoHS (100 % Sn) compliant annealed matte-tin plating solderable per MIL-STD-750, method 2026 Cathode indicated by band Part number marked on package Available in Bulk or Custom Tape & Reel packaging Weight: 0.1 gram (approximately) PACKAGE DIMENSIONS PAD LAYOUT SYMBOLS & DEFINITIONS Symbol VWM PPP VBR ID Definition Symbol Working Peak (Standoff) Voltage Peak Pulse Power Breakdown Voltage Standby Current RF01021 Rev A, October 2010 IPP VC IBR Definition Peak Pulse Current Clamping Voltage Breakdown Current for VBR High Reliability Product Group Page 2 of 4 TECHNICAL DATA SHEET Gort Road Business Park, Ennis, Co. Clare, Ireland. Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803 Website: http://www.microsemi.com ___________________________________________________________________________________________________________________________________ ELECTRICAL CHARACTERISTICS @ 25oC MICROSEMI PART NUMBER REVERSE STAND-OFF VOLTAGE (Note 1) VWM Volts MSMBJSAC5.0 MSMBJSAC6.0 MSMBJSAC7.0 MSMBJSAC8.0 MSMBJSAC8.5 MSMBJSAC10 MSMBJSAC12 MSMBJSAC15 MSMBJSAC18 MSMBJSAC22 MSMBJSAC26 MSMBJSAC36 MSMBJSAC45 MSMBJSAC50 MSMBJSAC75 5.0 6.0 7.0 8.0 8.5 10 12 15 18 22 26 36 45 50 75 BREAKDOWN VOLTAGE @ I(BR) 1.0mA V(BR) MAXIMUM STANDBY CURRENT @VWM ID Volts Min. A 7.60 7.90 8.33 8.89 9.44 11.10 13.30 16.70 20.00 24.40 28.90 40.0 50.00 55.50 83.3 300 300 300 100 50 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 MAXIMUM CLAMPING VOLTAGE IP = 5.0A* VC MAXIMUM PEAK PULSE CURRENT* RATING IPP Volts Amps 10.0 11.2 12.6 13.4 14.0 16.3 19.0 23.6 28.8 35.4 42.3 60.0 77.0 88.0 121 44 41 38 36 34 29 25 20 15 14 11.1 8.6 6.8 5.8 4.1 MAXIMUM CAPACITANCE @ O Volts, f=1 MHz WORKING INVERSE BLOCKING VOLTAGE VWIB pF Volts 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 75 75 75 75 75 75 75 75 75 75 75 75 150 150 150 INVERSE BLOCKING LEAKAGE CURRENT IIB @ VWIB PEAK INVERSE BLOCKING VOLTAGE VPIB Volts A 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 100 100 100 100 100 100 100 100 100 100 100 100 200 200 200 *See Figure 3. For the MSMBJSAC75, the maximum clamping voltage VC is at the maximum rated Peak Pulse Current (IPP) of 4.1 Amps. Clamping Factor: The ratio of the numerical value of VC to V(BR) is typically 1.4 @ full rated power, 1.20 @ 50% rated power. Also see MicroNote 108. Note 1: A transient voltage suppressor is normally selected according to voltage (VWM), that should be equal to or greater than the dc or continuous peak operating voltage level. Note 2: When pulse testing, test in TVS avalanche direction. Do not pulse in “forward” direction. See section for “Schematic Applications” herein. GRAPHS RF01021 Rev A, October 2010 High Reliability Product Group Page 3 of 4 TECHNICAL DATA SHEET Gort Road Business Park, Ennis, Co. Clare, Ireland. Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803 Website: http://www.microsemi.com ___________________________________________________________________________________________________________________________________ GRAPHS Cont. SCHEMATIC APPLICATIONS The TVS low capacitance device configuration is shown in Figure 4. As a further option for unidirectional applications, an additional low capacitance rectifier diode may be used in parallel in the same polarity direction as the TVS as shown in Figure 5. In applications where random high voltage transients occur, this will prevent reverse transients from damaging the internal low capacitance rectifier diode and also provide a low voltage conducting direction. The added rectifier diode should be of similar low capacitance and also have a higher reverse voltage rating than the TVS clamping voltage VC. If using two (2) low capacitance TVS devices in anti-parallel for bidirectional applications, this added protective feature for both directions (including the reverse of each rectifier diode) is inherently provided in Figure 6. The unidirectional and bidirectional configurations in Figure 5 and 6 will both result in twice the capacitance of Figure 4. RF01021 Rev A, October 2010 High Reliability Product Group Page 4 of 4