RFPA0133TR7

RFPA0133 3 TO 5V PROGRAMMABLE GAIN HIGH EFFICIENCY POWER AMPLIFIER     Digitally Controlled Output Power 380MHz to 960MHz Frequency Range High Isolation Applications       Analog Communication Systems 900MHz Spread Spectrum Systems 400MHz Industrial Radios Driver Stage for Higher Power Applications 3V to 5V Applications High Isolation Buffer NC VCC1 G16 13 NC 1 12 G8 GND 2 11 NC RF IN 3 10 RF OUT/VCC2 NC 4 9 RF OUT/VCC2 5 6 7 8 NC  14 NC  0.5W CW Output Power at 3.6V 1W CW Output Power at 5V 32dB Small Signal Gain at 900MHz >60% Efficiency @ PSAT 15 PD  16 NC Features VBIAS Package Style: QFN, 16-Pin, 3mmx3mm Functional Block Diagram Product Description The RFPA0133 is a 3V to 5V high efficiency programmable gain amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process. The device has been designed to offer saturated efficiency greater than 60% over a range of frequencies from 380MHz to 960MHz. Ordering Information RFPA0133SQ RFPA0133SR RFPA0133TR7 RFPA0133PCK-410 RFPA0133PCK-411 GaAs HBT GaAs MESFET InGaP HBT Sample Bag with 25 Pieces 7” Reel with 100 Pieces 7” Reel with 2500 Pieces 860MHz to 930MHz PCBA with 5-piece Sample Bag 430MHz to 470MHz PCBA with 5-piece Sample Bag Optimum Technology Matching® Applied SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MEMS LDMOS RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2012, RF Micro Devices, Inc. DS120206 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com. 1 of 9 RFPA0133 Absolute Maximum Ratings Parameter Rating Unit Supply Voltage -0.5 to +5.25 VDC Power Down Voltage (VPD) -0.5 to +3.3 V VBIAS -0.5 to +3.3 V DC Supply Current 500 mA Input RF Power +10 dBm Output Load VSWR (See Note) 6:1 Ambient Operating Temperature -40 to +85 °C Storage Temperature -40 to +150 °C Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. RoHS status based on EUDirective2002/95/EC (at time of this document revision). The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. Note: Due to high efficiency of this PA, the maximum ICC should always be less than 400mA. Only under short term poor VSWR conditions is 500mA acceptable. Parameter Min. Specification Typ. Max. Unit Condition T=25 °C, VCC =3.6V, VPD =VBIAS =3.0V, PIN =0dBm, Freq=915MHz Overall CW Output Power 27.5 dBm VCC =3.6V CW Output Power 30 dBm VCC =5V Small Signal Gain 32 dB PIN =-10dBm Second Harmonic 23 dBc Without external second harmonic trap Third Harmonic CW Efficiency 45 dBc 55 63 % 0 0.5 Power Down “ON” Power Down “OFF” 3.0 VPD Input Current 0.8 6 G16=“high”, G8=“high”, PIN =0dBm V Voltage supplied to the input V Voltage supplied to the input mA Only in “ON” state G16, G8 “ON” 1.7 3.0 V Voltage supplied to the input G16, G8 “OFF” 0 0.7 V Voltage supplied to the input G16, G8 Input Current Output Power 1.0 mA Only in “ON” state 26.5 27.5 29 dBm G16=“high”, G8=“high”, PIN =0dBm 21 23 25 dBm G16=“high”, G8=“low”, PIN =0dBm 14 16 18 dBm G16=“low”, G8=“high”, PIN =0dBm 3 5 8 dBm G16=“low”, G8=“low”, PIN =0dBm Turn On/Off Time 200 ns Power Supply Power Supply Voltage 3.6 V Power Supply Current 230 mA 150 mA G16=“high”, G8=“low”, PIN =0dBm 65 mA G16=“low”, G8=“high”, PIN =0dBm 35 Idle Current 2 of 9 40 Specifications G16=“high”, G8=“high”, PIN =0dBm mA G16=“low”, G8=“low”, PIN =0dBm 75 110 mA G16=“high”, G8=“high”, No RF In 60 200 nA G16=“low”, G8=“low”, PD=“low”. No RF IN. 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com. DS120206 RFPA0133 POUT versus PIN 860MHz to 930MHz at 3.6V and +25°C. Efficiency versus POUT 860MHz to 930MHz at 3.6V and +25°C 70 65 28 60 55 26 50 Output Power (dBm) 24 Efficiency (%) 45 40 35 22 30 RFPA0133_860MHz RFPA0133_900MHz RFPA0133_930MHz 20 RFPA0133_860MHz RFPA0133_900MHz RFPA0133_930MHz 25 20 18 15 -15 -13 -11 -9 -7 -5 -3 -1 1 3 20 5 21 22 POUT versus PIN 900MHz at 3.6V; -40°C to +85°C 24 25 26 27 28 29 Efficiency versus POUT 900MHz at 3.6V; -40°C to +85°C 29 70 28 65 27 60 26 55 25 50 24 Output Power (dBm) 23 Output Power (dBm) Input Power (dBm) 23 Efficiency (%) 22 21 45 40 35 20 30 19 18 17 RFPA0133_-40C RFPA0133_+25C 25 RFPA0133_-40C EFPA0133_+25C RFPA0133_+85C 20 16 RFPA0133_+85C 15 20 -15 -14-13 -12-11 -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 1 2 3 4 5 21 22 23 24 25 26 27 28 29 Output Power (dBm) Input Power (dBm) PSAT versus VCC 900 MHz PIN=0 dBm Saturated Efficiency versus VCC 900 MHz PIN=0 dBm 66 31 30 65 29 64 28 Efficiency (%) POUT (dBm) 27 63 62 26 61 25 24 60 2.5 3.0 3.5 4.0 VCC DS120206 4.5 5.0 2.5 3.0 3.5 4.0 4.5 5.0 VCC 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com. 3 of 9 RFPA0133 Thermal Resistance versus Output Power Thermal Resistance versus Current 150 140 140 120 Thermal Resistance (°C/W) Thermal Resistance (°C/W) 130 110 100 90 80 70 60 50 40 30 3.6V 20 5.0V 130 3.6V 120 5.0V 110 100 90 80 70 60 50 10 0 40 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 Power (dBm) 75 100 125 150 175 200 225 250 275 300 325 350 Current (mA) Maximum Die Temperature versus Output Power 160 Die Temperature (°C ) 150 140 130 120 110 100 3V 90 5V 80 0 5 10 15 20 25 30 Output Power (dBm) NOTE: Thermal resistance and die temperature are measured at a PCB temperature of 85C on a standard 900MHz evaluation board. 4 of 9 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com. DS120206 RFPA0133 Pin 1,4,5, 7,8, 11, 15 2 Function NC 3 RF IN 6 VPD 9,10 RF OUT/VCC2 12 G8 13 G16 14 16 VCC1 VBIAS GND Description These pins may be left unconnected or soldered to ground. Ground connection. Keep traces physically short and connect immediately to the ground plane for best performance. Amplifier RF input. The amplifier does not contain internal DC blocking and, therefore, should be externally DC blocked before connecting to any device which has DC present or which contains a DC path to ground. Power down control voltage. When this pin is at 0V, the device will be in power down mode, dissipating minimum DC power. When this pin is at 3V the device will be in full power mode delivering maximum gain and output power capability. This pin should not, in any circumstance, be higher than 3.3V. This pin should also have an external UHF and HF bypassing capacitor. Typically VBIAS =VPD =3.0V. Amplifier RF output. This is an unmatched collector output of the final amplifier transistor. Bias for the final power amplifier output transistor must also be provided through one of these pins. Pins 9 and 10 should be used for the RF output with a matching network that presents the optimum load impedance to the PA for maximum power and efficiency, as well as providing DC blocking at the output. RF output power gain control 8dB bit (see specification table for logic). The control voltage at this pin should never exceed 3.3V and a logic high should be at least 1.7V. This pin should also have an external UHF bypassing capacitor. See note. RF output power gain control 16dB bit (see specification table for logic). The control voltage at this pin should never exceed 3.3V and a logic high should be at least 1.7V. This pin should also have an external UHF bypassing capacitor. See note. Positive supply for the first stage (driver) amplifier. This is an unmatched transistor collector output. Positive supply for the bias circuits. This pin should be bypassed with a single UHF capacitor, placed as close as possible to the package. Typically, VBIAS =VPD =3.0V. Note: The 8dB and 16dB gain steps are approximate for small signal operation. As the device compresses, the values of the gain steps compress as well. The output power table on page two shows the effect of the gain steps for saturated (0dBm input) operation. DS120206 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com. 5 of 9 RFPA0133 Evaluation Board Schematic 860MHz to 930MHz R2 (See Table Below) C13 2.2 F VBIAS C14 2.2 F C5 100 pF C4 100 pF L4 2.7 nH Toko VCC1 G16 R1 DNP C7 100 pF 16 C1 100 pF L1 4.7 nH Toko RF IN C15 DNP 15 12 2 11 3 10 4 9 5.0 4.5 4.0