ADG782BCPZ

a FEATURES 1.8 V to 5.5 V Single Supply Low On Resistance (2.5  Typ) Low On-Resistance Flatness (0.5 ) –3 dB Bandwidth > 200 MHz Rail-to-Rail Operation 20-Lead 4 mm  4 mm Chip Scale Package Fast Switching Times t ON = 16 ns t OFF = 10 ns Typical Power Consumption (< 0.01 W) TTL/CMOS Compatible For Functionally Equivalent Devices in 16-Lead TSSOP and SOIC Packages, See ADG711/ADG712/ADG713 2.5  Quad SPST Switches in Chip Scale Package ADG781/ADG782/ADG783 FUNCTIONAL BLOCK DIAGRAMS S1 IN1 IN1 D1 D1 S2 S2 IN2 IN2 S3 IN3 D3 D3 S4 S4 IN4 D4 D2 ADG783 S3 IN3 IN4 S2 D2 ADG782 S3 IN3 D1 IN2 D2 ADG781 S1 S1 IN1 D3 S4 IN4 D4 D4 SWITCHES SHOWN FOR A LOGIC “1” INPUT APPLICATIONS Battery Powered Systems Communication Systems Sample Hold Systems Audio Signal Routing Video Switching Mechanical Reed Relay Replacement GENERAL DESCRIPTION PRODUCT HIGHLIGHTS The ADG781, ADG782, and ADG783 are monolithic CMOS devices containing four independently selectable switches. These switches are designed on an advanced submicron process that provides low power dissipation and high switching speed, low on resistance, low leakage currents and high bandwidth. 1. 20-Lead 4 mm ⫻ 4 mm Chip Scale Package (CSP). They are designed to operate from a single 1.8 V to 5.5 V supply, making them ideal for use in battery powered instruments and with the new generation of DACs and ADCs from Analog Devices. Fast switching times and high bandwidth make the part suitable for video signal switching. 3. Very Low RON (4.5 Ω max at 5 V, 8 Ω max at 3 V). At supply voltage of 1.8 V, RON is typically 35 Ω over the temperature range. The ADG781, ADG782, and ADG783 contain four independent single-pole/single throw (SPST) switches. The ADG781 and ADG782 differ only in that the digital control logic is inverted. The ADG781 switches are turned on with a logic low on the appropriate control input, while a logic high is required to turn on the switches of the ADG782. The ADG783 contains two switches whose digital control logic is similar to the ADG781, while the logic is inverted on the other two switches. 2. 1.8 V to 5.5 V Single Supply Operation. The ADG781, ADG782, and ADG783 offer high performance and are fully specified and guaranteed with 3 V and 5 V supply rails. 4. Low On-Resistance Flatness. 5. –3 dB Bandwidth >200 MHz. 6. Low Power Dissipation. CMOS construction ensures low power dissipation. 7. Fast tON/tOFF. 8. Break-Before-Make Switching. This prevents channel shorting when the switches are configured as a multiplexer (ADG783 only). Each switch conducts equally well in both directions when ON. The ADG783 exhibits break-before-make switching action. The ADG781/ADG782/ADG783 are available in 20-lead chip scale packages. REV. C Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781/329-4700 www.analog.com Fax: 781/461-3113 © Analog Devices, Inc., 2013 ADG781/ADG782/ADG783–SPECIFICATIONS Parameter ANALOG SWITCH Analog Signal Range On Resistance (RON) On-Resistance Match Between Channels (ΔRON) On-Resistance Flatness (RFLAT(ON)) B Version –40C to +25C +85C 0 V to VDD 2.5 4 4.5 0.05 0.4 0.5 1.0 LEAKAGE CURRENTS Source OFF Leakage IS (OFF) Drain OFF Leakage ID (OFF) Channel ON Leakage ID, IS (ON) ± 0.01 ± 0.1 ± 0.01 ± 0.1 ± 0.01 ± 0.1 DIGITAL INPUTS Input High Voltage, VINH Input Low Voltage, VINL Input Current IINL or IINH 0.005 DYNAMIC CHARACTERISTICS2 tON 11 Unit V Ω typ Ω max Ω typ Ω max Ω typ Ω max Test Conditions/Comments VS = 0 V to VDD, IS = –10 mA; Test Circuit 1 VS = 0 V to VDD, IS = –10 mA VS = 0 V to VDD, IS = –10 mA VDD = 5.5 V; VS = 4.5 V/1 V, VD = 1 V/4.5 V; Test Circuit 2 VS = 4.5 V/1 V, VD = 1 V/4.5 V; Test Circuit 2 VS = VD = 1 V, or 4.5 V; Test Circuit 3 ± 0.2 nA typ nA max nA typ nA max nA typ nA max 2.4 0.8 V min V max ± 0.1 μA typ μA max VIN = VINL or VINH RL = 300 Ω, CL = 35 pF, VS = 3 V; Test Circuit 4 RL = 300 Ω, CL = 35 pF, VS = 3 V; Test Circuit 4 RL = 300 Ω, CL = 35 pF, VS1 = VS2 = 3 V; Test Circuit 5 VS = 2 V; RS = 0 Ω, CL = 1 nF; Test Circuit 6 RL = 50 Ω, CL = 5 pF, f = 10 MHz RL = 50 Ω, CL = 5 pF, f = 1 MHz; Test Circuit 7 RL = 50 Ω, CL = 5 pF, f = 10 MHz; Test Circuit 8 RL = 50 Ω, CL = 5 pF; Test Circuit 9 f = 1 MHz f = 1 MHz f = 1 MHz ± 0.2 ± 0.2 tOFF 6 Break-Before-Make Time Delay, tD (ADG783 Only) Charge Injection 6 3 ns typ ns max ns typ ns max ns typ ns min pC typ Off Isolation –58 –78 dB typ dB typ Channel-to-Channel Crosstalk –90 dB typ Bandwidth –3 dB CS (OFF) CD (OFF) CD, CS (ON) 200 10 10 22 MHz typ pF typ pF typ pF typ 0.001 μA typ μA max 16 10 POWER REQUIREMENTS IDD (VDD = 5 V  10%, GND = 0 V. All specifications –40C to +85C unless otherwise noted.) 1 1.0 VDD = 5.5 V Digital Inputs = 0 V or 5.5 V NOTES 1 Temperature ranges are as follows: B Version: –40°C to +85°C. 2 Guaranteed by design, not subject to production test. Specifications subject to change without notice. –2– REV. C ADG781/ADG782/ADG783 SPECIFICATIONS1 (VDD = 3 V 10%, GND = 0 V. All specifications –40C to +85C unless otherwise noted.) Parameter B Version –40C to +25C +85C ANALOG SWITCH Analog Signal Range On Resistance (RON) 5 On-Resistance Match Between Channels (ΔRON) On-Resistance Flatness (RFLAT(ON)) LEAKAGE CURRENTS Source OFF Leakage IS (OFF) Drain OFF Leakage ID (OFF) Channel ON Leakage ID, IS (ON) 0 V to VDD 5.5 10 VS = 0 V to VDD, IS = –10 mA ± 0.2 nA typ nA max nA typ nA max nA typ nA max VDD = 3.3 V; VS = 3 V/1 V, VD = 1 V/3 V; Test Circuit 2 VS = 3 V/1 V, VD = 1 V/3 V; Test Circuit 2 VS = VD = 1 V, or 3 V; Test Circuit 3 2.0 0.8 V min V max ± 0.1 μA typ μA max VIN = VINL or VINH RL = 300 Ω, CL = 35 pF, VS = 2 V; Test Circuit 4 RL = 300 Ω, CL = 35 pF, VS = 2 V; Test Circuit 4 RL = 300 Ω, CL = 35 pF, VS1 = VS2 = 2 V; Test Circuit 5 VS = 1.5 V; RS = 0 Ω, CL = 1 nF; Test Circuit 6 RL = 50 Ω, CL = 5 pF, f = 10 MHz RL = 50 Ω, CL = 5 pF, f = 1 MHz; Test Circuit 7 RL = 50 Ω, CL = 5 pF, f = 10 MHz; Test Circuit 8 RL = 50 Ω, CL = 5 pF; Test Circuit 9 f = 1 MHz f = 1 MHz f = 1 MHz 0.5 2.5 DIGITAL INPUTS Input High Voltage, VINH Input Low Voltage, VINL Input Current IINL or IINH 0.005 DYNAMIC CHARACTERISTICS2 tON 13 ± 0.2 ± 0.2 tOFF 7 Break-Before-Make Time Delay, tD (ADG783 Only) Charge Injection 7 3 ns typ ns max ns typ ns max ns typ ns min pC typ Off Isolation –58 –78 dB typ dB typ Channel-to-Channel Crosstalk –90 dB typ Bandwidth –3 dB CS (OFF) CD (OFF) CD, CS (ON) 200 10 10 22 MHz typ pF typ pF typ pF typ 0.001 μA typ μA max 20 12 POWER REQUIREMENTS IDD 1 1.0 NOTES 1 Temperature ranges are as follows: B Version: –40°C to +85°C. 2 Guaranteed by design, not subject to production test. Specifications subject to change without notice. REV. C Test Conditions/Comments V Ω typ Ω max Ω typ Ω max Ω typ 0.1 ± 0.01 ± 0.1 ± 0.01 ± 0.1 ± 0.01 ± 0.1 Unit –3– VS = 0 V to VDD, IS = –10 mA; Test Circuit 1 VS = 0 V to VDD, IS = –10 mA VDD = 3.3 V Digital Inputs = 0 V or 3.3 V ADG781/ADG782/ADG783 ABSOLUTE MAXIMUM RATINGS 1 Lead Temperature, Soldering (10 sec) . . . . . . . . . . . . 300°C IR Reflow (