FEATURES
TYPICAL APPLICATION CIRCUITS
Low RDSON of 50 mΩ @ 3.3 V (WLCSP only)
Low input voltage range: 1.65 V to 6.5 V
1 A continuous operating current
Built-in level shift for control logic that can be operated by
1.2 V logic
Low 2.5 μA quiescent current @ VIN = 2.8 V
Low 1.1 μA shutdown current @ VIN = 2.8 V
Reverse current blocking
Programmable start-up time
Ultrasmall 1 mm × 1 mm, 4-ball, 0.5 mm pitch (WLCSP)
Tiny 8-lead lead frame chip scale package (LFCSP)
2.0 mm × 2.0 mm × 0.55 mm, 0.5 mm pitch
ADP198
VOUT
VIN
+
GND
EN
ON
LEVEL SHIFT
AND SLEW
RATE CONTROL
LOAD
OFF
Figure 1. WLCSP
ADP198
APPLICATIONS
Mobile phones
Digital cameras and audio devices
Portable and battery-powered equipment
REVERSE
POLARITY
PROTECTION
09484-001
Data Sheet
Logic Controlled, 1 A, High-Side Load
Switch with Reverse Current Blocking
ADP198
REVERSE
POLARITY
PROTECTION
VIN
VOUT
VIN
VOUT
+
SEL0
SEL1
ON
EN
OFF
SLEW
RATE CONTROL
LOAD
LEVEL SHIFT
09484-002
GND
Figure 2. LFCSP
GENERAL DESCRIPTION
The ADP198 is a high-side load switch designed for operation
between 1.65 V and 6.5 V that is protected against reverse
current flow from output to input. A load switch provides power
domain isolation, thereby helping to keep subsystems isolated and
powered independently and enabling reduced power consumption.
The ADP198 contains a low on-resistance P-channel MOSFET
that supports more than 1 A of continuous load current. The
low 2.5 μA quiescent current and ultralow shutdown current
make the ADP198 ideal for battery-operated portable
Rev. G
equipment. The built-in level shifter for enable logic makes the
ADP198 compatible with modern processors and general-purpose
input/output (GPIO) controllers. The LFCSP version also allows
the user to program the start-up time to control the inrush
current at turn on.
The ADP198 is available in an ultrasmall 1 mm × 1 mm, 4-ball,
0.5 mm pitch WLCSP. An 8-lead, 2 mm × 2 mm × 0.55 mm,
0.5 mm pitch LFCSP is also available.
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Technical Support
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ADP198
Data Sheet
TABLE OF CONTENTS
Features .............................................................................................. 1
Typical Performance Characteristics ..............................................8
Applications ....................................................................................... 1
Theory of Operation ...................................................................... 11
Typical Application Circuits............................................................ 1
Applications Information .............................................................. 12
General Description ......................................................................... 1
Ground Current .......................................................................... 12
Revision History ............................................................................... 2
Enable Feature ............................................................................ 13
Specifications..................................................................................... 3
Timing.......................................................................................... 14
Absolute Maximum Ratings ....................................................... 5
Diode OR’ing Applications ....................................................... 15
Thermal Data ................................................................................ 5
Packaging and Ordering Information ......................................... 16
Thermal Resistance ...................................................................... 5
Outline Dimensions ................................................................... 16
ESD Caution .................................................................................. 5
Ordering Guide .......................................................................... 16
Pin Configurations and Function Descriptions ........................... 6
REVISION HISTORY
8/13—Rev. F to Rev. G
Added Text to Diode OR’ing Applications Section ................... 15
Updated Outline Dimensions ....................................................... 16
Changed Input Voltage Range Condition from TJ = −40°C to
+85°C to TJ = −40°C to +125°C; Table 1 ........................................ 3
Added Continuous Drain Input, TA = 125°C of ±600 mA........... 5
Changes to VOUT Time Parameters ..............................................3
6/13—Rev. E to Rev. F
11/11—Rev. A to Rev. B
Changes to Table 1 ............................................................................. 3
Updated Outline Dimensions ........................................................16
Changes to WLCSP Turn-On Delay Time Parameter..................3
Changes to Ordering Guide .......................................................... 16
7/12—Rev. D to Rev. E
10/11—Rev. 0 to Rev. A
Changes to Table 1 ............................................................................ 3
Changes to Figure 3 .......................................................................... 4
Changes to Timing Section and Table 6 ...................................... 14
Changes to Ordering Guide .......................................................... 16
6/12—Rev. C to Rev. D
Change to Features Section ..............................................................1
Changes to Table 1, Specifications Section ....................................3
Change to Ground Current Section ............................................. 12
Changes to Enable Feature Section .............................................. 13
Updated Outline Dimensions ....................................................... 16
Changes to Table Headings in Table 6 ......................................... 14
10/11—Revision 0: Initial Version
4/12—Rev. B to Rev. C
Rev. G | Page 2 of 16
Data Sheet
ADP198
SPECIFICATIONS
VIN = 2.8 V, EN = VIN, IOUT = 200 mA, TA = 25°C, unless otherwise noted. TJ = −40°C to +85°C for minimum/maximum specifications,
unless otherwise noted.
Table 1.
Parameter
INPUT VOLTAGE RANGE
EN INPUT
Threshold
High
Low
Pull-Down Current
REVERSE BLOCKING
VOUT Current
Hysteresis
CURRENT
Quiescent Current
Off State Current
VIN to VOUT RESISTANCE
WLCSP
Symbol
VIN
Test Conditions/Comments
TJ = −40°C to +125°C
Min
1.65
VIH
VIN ≤ 5 V
5 V < VIN
1.65 V ≤ VIN ≤ 6.5 V
1.65 V ≤ VIN ≤ 6.5 V, TJ = −40°C to +125°C
1.2
1.3
VIL
IEN
IOFF
Max
6.5
0.43
0.37
500
VEN = 0, VIN = 0, VOUT = 6.5 V
|VIN − VOUT|
IQ
Typ
IOUT = 0 mA, includes EN pull-down current
VIN = VOUT = 2.8 V
VIN = VOUT = 6.5 V
EN = GND
EN = GND, VOUT = 0 V
7
75
13
2.5
1.1
20
2
2
Unit
V
V
V
V
V
nA
µA
mV
µA
µA
µA
µA
RDSON
LFCSP
VIN = 5 V, ILOAD = 200 mA, VEN = 1.5 V
VIN = 3.3 V, ILOAD = 200 mA, VEN = 1.5 V
VIN = 3.3 V, ILOAD = 200 mA, VEN = 1.5 V, TJ = −40°C to +125°C
VIN = 2.8 V, ILOAD = 200 mA, VEN = 1.5 V
VIN = 1.8 V, ILOAD = 200 mA, VEN = 1.5 V
VIN = 1.65 V, ILOAD = 200 mA, VEN = 1.5 V
VIN = 5 V, ILOAD = 200 mA, VEN = 1.5 V
VIN = 5 V, ILOAD = 200 mA, VEN = 1.5 V, TJ = −40°C to +125°C
VIN = 3.3 V, ILOAD = 200 mA, VEN = 1.5 V
VIN = 2.8 V, ILOAD = 200 mA, VEN = 1.5 V
VIN = 1.8 V, ILOAD = 200 mA, VEN = 1.5 V
VIN = 1.65 V, ILOAD = 200 mA, VEN = 1.5 V
40
50
50
60
130
180
75
75
90
100
120
200
80
90
120
130
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
VOUT TIME
WLCSP
Turn-On Delay Time
tON_DLY
VIN = 3.6 V, ILOAD = 200 mA, VEN = 1.5 V, CLOAD = 1 μF, ADP198ACBZ-R7
VIN = 3.6 V, ILOAD = 200 mA, VEN = 1.5 V, CLOAD = 1 μF, ADP198ACBZ-11-R7
10
450
μs
μs
LFCSP
Turn-On Delay Time
tON_DLY
VIN = 3.6 V, ILOAD = 200 mA, VEN = 1.5 V, CLOAD = 1 μF; SEL0 = L, SEL1 = L
VIN = 3.6 V, ILOAD = 200 mA, VEN = 1.5 V, CLOAD = 1 μF; SEL0 = H, SEL1 = L
VIN = 3.6 V, ILOAD = 200 mA, VEN = 1.5 V, CLOAD = 1 μF; SEL0 = L, SEL1 = H
VIN = 3.6 V, ILOAD = 200 mA, VEN = 1.5 V, CLOAD = 1 μF; SEL0 = H, SEL1 = H
10
100
200
450
μs
μs
μs
μs
WLCSP
Turn-On Rise Time
tRISE
VIN = 3.6 V, ILOAD = 200 mA, VEN = 1.5 V, CLOAD = 1 μF, ADP198ACBZ-R7
VIN = 3.6 V, ILOAD = 200 mA, VEN = 1.5 V, CLOAD = 1 μF, ADP198ACBZ-11-R7
12
650
μs
μs
LFCSP
Turn-On Rise Time
tRISE
VIN = 3.6 V, ILOAD = 200 mA, VEN = 1.5 V, CLOAD = 1 μF; SEL0 = L, SEL1 = L
VIN = 3.6 V, ILOAD = 200 mA, VEN = 1.5 V, CLOAD = 1 μF; SEL0 = H, SEL1 = L
VIN = 3.6 V, ILOAD = 200 mA, VEN = 1.5 V, CLOAD = 1 μF; SEL0 = L, SEL1 = H
VIN = 3.6 V, ILOAD = 200 mA, VEN = 1.5 V, CLOAD = 1 μF; SEL0 = H, SEL1 = H
12
100
250
650
μs
μs
μs
μs
Rev. G | Page 3 of 16
ADP198
Data Sheet
Timing Diagram
EN
TURN-OFF
DELAY
TURN-ON
DELAY
VOUT
90%
10%
TURN-OFF
FALL TIME
09484-033
TURN-ON
RISE TIME
START UP
TIME
Figure 3. Timing Diagram
Rev. G | Page 4 of 16
Data Sheet
ADP198
ABSOLUTE MAXIMUM RATINGS
Table 2.
Parameter
VIN to GND Pins
VOUT to GND Pins
EN to GND Pins
Continuous Drain Current
TA = 25°C
TA = 85°C
TA = 125°C
Storage Temperature Range
Operating Junction Temperature Range
Soldering Conditions
Rating
−0.3 V to +7 V
−0.3 V to +7 V
−0.3 V to +7 V
±1000 mA
±1000 mA
±600mA
−65°C to +150°C
−40°C to +125°C
JEDEC J-STD-020
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
THERMAL DATA
Absolute maximum ratings apply individually only, not in
combination. The ADP198 can be damaged if the junction
temperature limits are exceeded. Monitoring ambient temperature
does not guarantee that TJ is within the specified temperature
limits. In applications with high power dissipation and poor
thermal resistance, the maximum ambient temperature may
need to be derated.
In applications with moderate power dissipation and low
printed circuit board (PCB) thermal resistance, the maximum
ambient temperature can exceed the maximum limit as long
as the junction temperature is within specification limits. The
junction temperature (TJ) of the device is dependent on the
ambient temperature (TA), the power dissipation of the device
(PD), and the junction-to-ambient thermal resistance of the
package (θJA).
Maximum junction temperature (TJ) is calculated from the
ambient temperature (TA) and power dissipation (PD) using the
formula
The junction-to-ambient thermal resistance (θJA) of the package
is based on modeling and calculation using a 4-layer board. The
junction-to-ambient thermal resistance is highly dependent on
the application and board layout. In applications where high
maximum power dissipation exists, close attention to thermal
board design is required. The value of θJA may vary, depending on
PCB material, layout, and environmental conditions. The specified values of θJA are based on a 4-layer, 4 inch × 3 inch PCB. Refer
to JESD 51-7 and JESD 51-9 for detailed information regarding
board construction. For additional information, see the AN-617
Application Note, MicroCSP™ Wafer Level Chip Scale Package.
ΨJB is the junction-to-board thermal characterization parameter
with units of °C/W. The ΨJB of the package is based on modeling
and calculation using a 4-layer board. The JESD51-12, Guidelines
for Reporting and Using Package Thermal Information, states that
thermal characterization parameters are not the same as thermal
resistances. ΨJB measures the component power flowing through
multiple thermal paths rather than a single path as in thermal
resistance, θJB. Therefore, ΨJB thermal paths include convection
from the top of the package as well as radiation from the package,
factors that make ΨJB more useful in real-world applications.
Maximum junction temperature (TJ) is calculated from the
board temperature (TB) and power dissipation (PD) using the
formula
TJ = TB + (PD × ΨJB)
Refer to JESD51-8, JESD51-9, and JESD51-12 for more detailed
information about ΨJB.
THERMAL RESISTANCE
θJA and ΨJB are specified for the worst-case conditions, that is, a
device soldered in a circuit board for surface-mount packages.
Table 3. Thermal Resistance
Package Type
4-Ball, 0.5 mm Pitch WLCSP
8-Lead, 2 mm × 2 mm LFCSP
ESD CAUTION
TJ = TA + (PD × θJA)
Rev. G | Page 5 of 16
θJA
260
72.1
θJC
4
42.3
ΨJB
58.4
47.1
Unit
°C/W
°C/W
ADP198
Data Sheet
PIN CONFIGURATIONS AND FUNCTION DESCRIPTIONS
A
1
2
VIN
VOUT
B
EN
GND
09484-004
TOP VIEW
(Not to Scale)
Figure 4. 4-Ball WLCSP Pin Configuration
Table 4. Pin Function Descriptions, WLCSP
Pin No.
A1
A2
B1
B2
Mnemonic
VIN
VOUT
EN
GND
Description
Input Voltage.
Output Voltage.
Enable Input. Drive EN high to turn on the switch and drive EN low to turn off the switch.
Ground.
Rev. G | Page 6 of 16
Data Sheet
ADP198
8 VIN
VOUT 1
ADP198
GND 3
TOP VIEW
(Not to Scale)
SEL1 4
7 VIN
6 EN
5 SEL0
09484-005
VOUT 2
NOTES
1. THE EXPOSED PAD IS CONNECTED TO THE SUBSTRATE OF THE ADP198
AND MUST BE CONNECTED TO GROUND.
Figure 5. 8-Lead LFCSP Pin Configuration
Table 5. Pin Function Descriptions, LFCSP
Pin No.
1
2
3
4
5
6
7
8
Mnemonic
VOUT
VOUT
GND
SEL1
SEL0
EN
VIN
VIN
EP
Description
Output Voltage. Connect Pin 1 and Pin 2 together.
Output Voltage. Connect Pin 1 and Pin 2 together.
Ground.
Select Turn-On Time.
Select Turn-On Time.
Enable Input. Drive EN high to turn on the switch and drive EN low to turn off the switch.
Input Voltage. Connect Pin 7 and Pin 8 together.
Input Voltage. Connect Pin 7 and Pin 8 together.
Exposed Pad. The exposed pad is connected to the substrate of the ADP198 and must be connected to ground.
Rev. G | Page 7 of 16
ADP198
Data Sheet
TYPICAL PERFORMANCE CHARACTERISTICS
0.12
0.25
0.10
ILOAD
ILOAD
ILOAD
ILOAD
ILOAD
ILOAD
0.20
RDSON (Ω)
0.06
ILOAD
ILOAD
ILOAD
ILOAD
ILOAD
0.04
= 100mA
= 200mA
= 400mA
= 800mA
= 1000mA
0.15
0.10
0.05
0.02
–40
–5
25
85
0
1.5
09484-006
0
125
TEMPERATURE (°C)
3.5
4.0
4.5
5.0
5.5
6.0
6.5
0.25
0.14
0.20
VOLTAGE DROP (V)
0.12
RDSON (Ω)
3.0
Figure 9. RDSON vs. Input Voltage (VIN), LFCSP
0.16
0.10
0.08
0.04
2.5
VIN (V)
Figure 6. RDSON vs. Temperature, WLCSP
0.06
2.0
09484-009
RDSON (Ω)
0.08
= 10mA
= 100mA
= 200mA
= 400mA
= 800mA
= 1000mA
ILOAD
ILOAD
ILOAD
ILOAD
ILOAD
= 100mA
= 200mA
= 400mA
= 800mA
= 1000mA
0.15
VIN = 1.65V
VIN = 1.80V
VIN = 2.10V
VIN = 2.50V
VIN = 2.80V
VIN = 3.30V
VIN = 3.80V
VIN = 4.50V
VIN = 5.50V
VIN = 6.50V
0.10
0.05
–40
–5
25
85
0
10
09484-007
0
125
TEMPERATURE (°C)
Figure 7. RDSON vs. Temperature, LFCSP
0.25
= 10mA
= 100mA
= 200mA
= 400mA
= 800mA
= 1000mA
0.20
VOLTAGE DROP (V)
ILOAD
ILOAD
ILOAD
ILOAD
ILOAD
ILOAD
0.20
0.15
0.10
0.05
0.15
VIN = 1.65V
VIN = 1.80V
VIN = 2.10V
VIN = 2.50V
VIN = 2.80V
VIN = 3.30V
VIN = 3.80V
VIN = 4.50V
VIN = 5.50V
VIN = 6.50V
0.10
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
VIN (V)
6.0
6.5
Figure 8. RDSON vs. Input Voltage (VIN), WLCSP
0
10
100
LOAD (mA)
Figure 11. Voltage Drop vs. Load Current, LFCSP
Rev. G | Page 8 of 16
1000
09484-011
0.05
09484-008
RDSON (Ω)
1000
Figure 10. Voltage Drop vs. Load Current, WLCSP
0.25
0
1.5
100
LOAD (mA)
09484-010
0.02
Data Sheet
ADP198
3.0
INPUT CURRENT
2.5
GROUND CURRENT (µA)
1
OUTPUT VOLTAGE
2
ENABLE
M40.0µs
A CH3
T 10.20%
ILOAD
ILOAD
ILOAD
ILOAD
ILOAD
= 100mA
= 200mA
= 400mA
= 800mA
= 1000mA
1.0
0.0
1.48V
25
–5
–40
85
09484-015
CH1 200mA Ω BW CH2 1.00V BW
CH3 2.00V BW
1.5
0.5
09484-012
3
2.0
125
TEMPERATURE (°C)
Figure 12. Typical Rise Time and Inrush Current,
VIN = 1.8 V, ILOAD = 200 mA, Select Code 00
Figure 15. Ground Current vs. Temperature
20
18
INPUT CURRENT
GROUND CURRENT (µA)
16
1
OUTPUT VOLTAGE
2
14
12
ILOAD
ILOAD
ILOAD
ILOAD
ILOAD
ILOAD
= 10mA
= 100mA
= 200mA
= 400mA
= 800mA
= 1000mA
10
8
6
4
09484-013
3
M20.0µs
A CH3
T 10.20%
0
1.5
1.48V
Figure 13. Typical Rise Time and Inrush Current,
VIN = 3.6 V, ILOAD = 200 mA, Select Code 00
2.0
2.5
3.0
3.5
4.0
4.5
VIN (V)
6.0
6.5
VIN = 1.65V
VIN = 2.10V
VIN = 2.50V
VIN = 3.30V
VIN = 3.80V
VIN = 5.50V
VIN = 6.50V
9
IGND SHUTDOWN CURRENT (µA)
INPUT CURRENT
1
OUTPUT VOLTAGE
2
09484-014
ENABLE
3
M10.0µs
A CH3
T 10.20%
5.5
Figure 16. Ground Current vs. Input Voltage (VIN)
10
CH1 500mA Ω BW CH2 5.00V BW
CH3 2.00V BW
5.0
8
7
6
5
4
3
2
1
0
–40
1.48V
–20
0
20
40
60
TEMPERATURE (°C)
80
100
120
09484-017
CH1 200mA Ω BW CH2 2.00V BW
CH3 2.00V BW
2
09484-016
ENABLE
Figure 17. IGND Shutdown Ground Current vs. Temperature, VOUT Open
Figure 14. Typical Rise Time and Inrush Current,
VIN = 6.5 V, ILOAD = 200 mA, Select Code 00
Rev. G | Page 9 of 16
ADP198
Data Sheet
10.00
2.00
IOUT SHUTDOWN CURRENT (µA)
1.00
–20
0
1.40
1.20
1.00
VIN = 1.65V
VIN = 2.10V
VIN = 2.50V
VIN = 3.30V
VIN = 3.80V
VIN = 5.50V
VIN = 6.50V
0.80
0.60
0.40
0.20
20
40
60
80
100
120
0
–40
TEMPERATURE (°C)
–20
0
20
40
60
Figure 18. Shutdown Ground Current vs. Temperature, VOUT = 0 V
IGND SHUTDOWN CURRENT (µA)
1.40
1.20
1.00
VIN = 1.65V
VIN = 2.10V
VIN = 2.50V
VIN = 3.30V
VIN = 3.80V
VIN = 5.50V
VIN = 6.50V
VIN = 1.65V
VIN = 2.10V
VIN = 2.50V
VIN = 3.30V
VIN = 3.80V
VIN = 5.50V
VIN = 6.50V
1.00
0.10
0.20
0
–40
–20
0
20
40
60
80
100
120
TEMPERATURE (°C)
Figure 19. IOUT Shutdown Current vs. Temperature, VOUT = 0 V
0.01
–40
09484-019
IOUT SHUTDOWN CURRENT (µA)
1.60
0.40
120
10.00
1.80
0.60
100
Figure 20. Reverse Input Shutdown Current vs. Temperature, VIN = 0 V
2.00
0.80
80
TEMPERATURE (°C)
09484-020
0.01
–40
VIN = 1.65V
VIN = 2.10V
VIN = 2.50V
VIN = 3.30V
VIN = 3.80V
VIN = 5.50V
VIN = 6.50V
09484-018
0.10
1.60
–20
0
20
40
60
TEMPERATURE (°C)
80
100
120
09484-021
IGND SHUTDOWN CURRENT (µA)
1.80
Figure 21. Reverse Shutdown Ground Current vs. Temperature, VOUT = 0 V
Rev. G | Page 10 of 16
Data Sheet
ADP198
THEORY OF OPERATION
ADP198
VIN
SEL0
The enable input incorporates a nominal 4 MΩ pull-down
resistor. SEL0 and SEL1 program the start-up time of the load
switch to reduce inrush current when the switch is turned on.
REVERSE
POLARITY
PROTECTION
VOUT
The reverse current protection circuitry prevents current from
flowing backwards through the ADP198 when the output voltage
is greater than the input voltage. A comparator senses the difference between the input and output voltages. When the difference
between the input voltage and output voltage exceeds 75 mV,
the body of the PFET is switched to VOUT and turned off or
opened. In other words, the gate is connected to VOUT.
SLEW
RATE CONTROL
SEL1
EN
LEVEL SHIFT
09484-022
GND
Figure 22. Functional Block Diagram
The ADP198 is a high-side PMOS load switch that is designed
for supply operation between 1.65 V and 6.5 V. The PMOS load
switch has a low on resistance of 50 mΩ at VIN = 3.3 V and
supports 1 A of continuous load current. The ADP198 features
low quiescent current at 2.5 μA typical using a 2.8 V supply.
The packaging is a space-saving 1 mm × 1 mm, 4-ball WLCSP.
The ADP198 is also available in a 2 mm × 2 mm × 0.55 mm,
0.5 mm pitch LFCSP.
Rev. G | Page 11 of 16
ADP198
Data Sheet
APPLICATIONS INFORMATION
GROUND CURRENT
The major source for ground current in the ADP198 is an internal
4 MΩ pull-down resistor on the enable pin. Figure 23 shows
the typical ground current when VEN = VIN and varies from
1.65 V to 6.5 V.
As shown in Figure 24, an increase in quiescent current can occur
when VEN ≠ VIN. This is caused by the CMOS logic nature of the
level shift circuitry as it translates a VEN signal ≥1.2 V to a logic
high. This increase is a function of the VIN − VEN delta.
60
20
50
14
12
ILOAD
ILOAD
ILOAD
ILOAD
ILOAD
ILOAD
= 10mA
= 100mA
= 200mA
= 400mA
= 800mA
= 1000mA
10
8
6
40
30
20
10
0
2
0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
VIN (V)
6.0
6.5
0
1
2
3
4
5
ENABLE VOLTAGE (V)
Figure 24. Typical Ground Current when VEN ≠ VIN
Figure 23. Ground Current vs. Load Current
Rev. G | Page 12 of 16
6
09484-024
4
09484-023
GROUND CURRENT (µA)
16
GROUND CURRENT (µA)
18
Data Sheet
ADP198
ENABLE FEATURE
The ADP198 uses the EN pin to enable and disable the VOUT
pin under normal operating conditions. As shown in Figure 25,
when a rising VEN voltage crosses the active threshold, VOUT
turns on. When a falling VEN voltage crosses the inactive
threshold, VOUT turns off.
The EN pin active/inactive thresholds derive from the VIN voltage;
therefore, these thresholds vary with the changing input voltage.
Figure 26 shows the typical EN active/inactive thresholds when
the input voltage varies from 1.65 V to 6.5 V.
1.2
1.1
ENABLE THRESHOLD (V)
2.0
1.8
1.6
VIN RISING
VIN FALLING
VOUT (V)
1.4
1.2
1.0
EN RISE
EN FALL
1.0
0.9
0.8
0.7
0.6
0.8
0.4
0.4
1
0
0.45
0.50
0.55
0.60
0.65
0.70
ENABLE VOLTAGE (V)
0.75
0.80
09484-025
0.2
Figure 25. Typical EN Operation
As shown in Figure 25, the EN pin has hysteresis built in. This
prevents on/off oscillations that can occur due to noise on the
EN pin as it passes through the threshold points.
Rev. G | Page 13 of 16
2
3
5
4
INPUT VOLTAGE (V)
6
Figure 26. Typical EN Thresholds vs. Input Voltage (VIN)
7
09484-026
0.5
0.6
ADP198
Data Sheet
TIMING
Turn-on delay is defined as the delta between the time that VEN
reaches >1.2 V and when VOUT rises to ~10% of its final value. The
ADP198 includes circuitry to have typical 10 µs turn-on delay at
3.6 V VIN to limit the VIN inrush current.
INPUT CURRENT
1
The rise time is defined as the delta between the time from
10% to 90% of VOUT reaching its final value. It is dependent on
the RC time constant where C = load capacitance (CLOAD) and
R = RDSON||RLOAD. Because RDSON is usually smaller than RLOAD,
an adequate approximation for RC is RDSON × CLOAD. An input
or load capacitor is not needed for the ADP198; however, capacitors
can be used to suppress noise on the board. If significant load
capacitance is connected, inrush current may be a concern. The
start-up time is the sum of the turn-on delay time plus the rise
time.
OUTPUT VOLTAGE
2
09484-029
ENABLE
3
CH1 200mA Ω BW CH2 2.00V BW
CH3 2.00V BW
M100µs
T 10.20%
A CH3
1.48V
Figure 29. Typical Rise Time and Inrush Current,
CLOAD = 1 µF, VIN = 3.6 V, ILOAD = 200 mA, Code 10
Figure 27 through Figure 30 show the turn-on delay and output
rise time for each of the four settings on SEL0 and SEL1.
INPUT CURRENT
1
INPUT CURRENT
1
OUTPUT VOLTAGE
2
OUTPUT VOLTAGE
09484-030
ENABLE
2
3
3
CH1 200mA Ω BW CH2 2.00V BW
CH3 2.00V BW
CH1 200mA Ω BW CH2 2.00V BW
CH3 2.00V BW
09484-027
ENABLE
M20.0µs
A CH3
T 10.20%
M200µs
T 10.20%
A CH3
1.48V
Figure 30. Typical Rise Time and Inrush Current,
CLOAD = 1 µF, VIN = 3.6 V, ILOAD = 200 mA, Code 11
1.48V
The turn-off time is defined as the delta between the time from
90% to 10% of VOUT reaching its final value. It is also dependent on
the RC time constant.
Figure 27. Typical Rise Time and Inrush Current,
CLOAD = 1 µF, VIN = 3.6 V, ILOAD = 200 mA, Code 00
Table 6. Start-Up Time Pin Settings
SEL1
0
0
1
1
INPUT CURRENT
1
OUTPUT VOLTAGE
2
09484-028
ENABLE
3
CH1 200mA Ω BW CH2 2.00V BW
CH3 2.00V BW
M40.0µs
T 10.20%
A CH3
1.48V
Figure 28. Typical Rise Time and Inrush Current,
CLOAD = 1 µF, VIN = 3.6 V, ILOAD = 200 mA, Code 01
Rev. G | Page 14 of 16
SEL0
0
1
0
1
Start-Up Time (μs)
(Turn-On Delay + Rise Time)
22
200
450
1100
Data Sheet
ADP198
DIODE OR’ing APPLICATIONS
rectifier. For example, at 85°C, the reverse current of a Schottky
rectifier can be as high as 30 μA with only 2.5 V of reverse bias.
6V
VOUT =
V2 – (ILOAD × RON)
EN
1A
SLOPE =
Figure 31. ADP198 in a Typical Diode OR’ing Application
Figure 31 shows an application wherein an ac power supply and
battery are OR’ed together to provide a seamless transition from
the primary (ac) supply to the secondary (V2) supply when the
primary supply is disconnected. By connecting the enable input
of the ADP198 to V2, the transition from ac power to battery
power is automatic.
Figure 32 shows the forward voltage vs. the forward current
characteristics of a Schottky diode and the ADP198. The low on
resistance of the ADP198 makes it far superior to a Schottky
diode in diode OR’ing applications.
In addition to low on resistance, the ADP198 reverse leakage
current is much lower than a typical 1 A, 20 V Schottky
Rev. G | Page 15 of 16
1
RON
SCHOTTKY
FORWARD
VOLTAGE
75mV (VHYS )
300mV
FORWARD VOLTAGE (V)
Figure 32. Forward Voltage vs. Forward Current of a Schottky
Diode and ADP198
09484-032
VOUT
CURRENT (A)
+
VIN
09484-031
ADP198
V2
Figure 32 shows that about 75 mV of hysteresis built into the
circuitry that senses the voltage differential between the input
and output voltage. When the difference between the input
voltage and output voltage exceeds 75 mV, the ADP198 is
switched on.
LOAD
AC
ADP198
Data Sheet
PACKAGING AND ORDERING INFORMATION
OUTLINE DIMENSIONS
0.990
0.950
0.910
2
1
A
1.065
1.025
0.985
BALL A1
IDENTIFIER
B
0.50
BSC
TOP VIEW
(BALL SIDE DOWN)
0.640
0.595
0.550
END VIEW
BOTTOM VIEW
(BALL SIDE UP)
0.370
0.355
0.340
COPLANARITY
0.05
PKG-3615
0.340
0.320
0.300
0.270
0.240
0.210
06-06-2013-A
SEATING
PLANE
Figure 33. 4-Ball Wafer Level Chip Scale Package [WLCSP]
(CB-4-4)
Dimensions shown in millimeters
1.70
1.60
1.50
2.10
2.00 SQ
1.90
0.50 BSC
8
5
1.10
1.00
0.90
EXPOSED
PAD
0.425
0.350
0.275
4
TOP VIEW
0.60
0.55
0.50
SEATING
PLANE
0.05 MAX
0.02 NOM
0.30
0.25
0.20
1
BOTTOM VIEW
PIN 1
INDICATOR
(R 0.15)
FOR PROPER CONNECTION OF
THE EXPOSED PAD, REFER TO
THE PIN CONFIGURATION AND
FUNCTION DESCRIPTIONS
SECTION OF THIS DATA SHEET.
0.20 REF
01-14-2013-C
PIN 1 INDEX
AREA
0.15 REF
Figure 34. 8-Lead Lead Frame Chip Scale Package [LFCSP_UD]
2.00 × 2.00 mm Body, Ultra Thin, Dual Lead
(CP-8-10)
Dimensions shown in millimeters
ORDERING GUIDE
Model1
ADP198ACBZ-R7
ADP198ACBZ-11-R7
ADP198ACPZ-R7
Temperature
Range
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
Start-Up
Time (μs)
22
1100
Pin selectable:
22, 200, 450,
and 1100
ADP198CP-EVALZ
1
Package Description
4-Ball Wafer Level Chip Scale Package [WLCSP]
4-Ball Wafer Level Chip Scale Package [WLCSP]
8-Lead Lead Frame Chip Scale Package [LFCSP_UD]
Package
Option
CB-4-4
CB-4-4
CP-8-10
Evaluation Board
Z = RoHS Compliant Part.
©2011–2013 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective owners.
D09484-0-8/13(G)
www.analog.com/ADP198
Rev. G | Page 16 of 16
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