HMC-ALH216

HMC-ALH216 v03.0209 LOW NOISE AMPLIFIERS - CHIP 1 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 14 - 27 GHz Typical Applications Features This HMC-ALH216 is ideal for: Noise Figure: 2.5 dB @ 20 GHz • Point-to-Point Radios Gain: 18 dB • Point-to-Multi-Point Radios P1dB Output Power: +14 dBm • Military & Space Supply Voltage: +4V @ 90 mA • Test Instrumentation Die Size: 2.25 x 1.58 x 0.1 mm Functional Diagram General Description The HMC-ALH216 is a GaAs MMIC HEMT Wideband Low Noise Amplifier die which operates between 14 and 27 GHz. The amplifier provides 18 dB of gain, 2.5 dB noise figure and +14 dBm of output power at 1 dB gain compression while requiring only 90 mA from a +4V supply voltage. The HMC-ALH216 amplifier is ideal for integration into Multi-Chip-Modules (MCMs) due to its small size. Electrical Specifi cations*, TA = +25° C, Vdd= +4V Parameter Min. Frequency Range Gain Typ. Max. 14 - 27 14 Units GHz 18 dB Gain Variation over Temperature 0.02 dB / °C Noise Figure 2.7 Input Return Loss 15 Output Return Loss 15 dB Supply Current (Idd) (Vdd = 4V, Vgg = -0.5 Typ.) 90 mA 4.5 dB dB *Unless otherwise indicated, all measurements are from probed die 1 - 126 For price, delivery, and to placeCorporation: orders: Analog Devices, Inc., For price, delivery, and to place orders, please contact Hittite Microwave One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 20 Alpha Road, Chelmsford, MA 01824 Phone:Phone: 978-250-3343 978-250-3373 781-329-4700Fax: • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D Order On-line at www.hittite.com Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. HMC-ALH216 v03.0209 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 14 - 27 GHz 2.8 20 19.5 2.6 NOISE FIGURE (dB) 19 GAIN (dB) 18.5 18 17.5 17 2.4 2.2 2 16.5 16 1.8 15 17 19 21 23 25 15 27 17 FREQUENCY (GHz) 21 23 25 27 FREQUENCY (GHz) Input Return Loss vs. Frequency Output Return Loss vs. Frequency 0 0 -5 -5 RETURN LOSS (dB) RETURN LOSS (dB) 19 -10 -15 -20 -25 -10 -15 LOW NOISE AMPLIFIERS - CHIP 1 Noise Figure vs. Frequency Linear Gain vs. Frequency -20 -25 -30 -30 15 17 19 21 23 25 27 FREQUENCY (GHz) 15 17 19 21 23 25 27 FREQUENCY (GHz) For price, delivery, and to placeCorporation: orders: Analog Devices, Inc., For price, delivery, and to place orders, please contact Hittite Microwave One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 20 Alpha Road, Chelmsford, MA 01824 Phone: Phone: 978-250-3343 978-250-3373 781-329-4700Fax: • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D Order On-line at www.hittite.com Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. 1 - 127 HMC-ALH216 v03.0209 LOW NOISE AMPLIFIERS - CHIP 1 Absolute Maximum Ratings Drain Bias Voltage +5.5 Vdc Gate Bias Voltage -1 to +0.3 Vdc RF Input Power 6 dBm Channel Temperature 180 °C Continuous Pdiss (T=85°C) (derate 14.9 mW/C above 85°C) 1.4 W Thermal Resistance (Channel to die bottom) 67 °C/W Storage Temperature -65 to +150 °C Operating Temperature -55 to +85 °C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing Die Packaging Information [1] Standard Alternate GP-1 (Gel Pack) [2] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. 1 - 128 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 14 - 27 GHz NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM]. 2. TYPICAL BOND PAD IS .004” SQUARE. 3. BACKSIDE METALLIZATION: GOLD. 4. BACKSIDE METAL IS GROUND. 5. BOND PAD METALLIZATION: GOLD. 6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. 7. OVERALL DIE SIZE ±.002” For price, delivery, and to placeCorporation: orders: Analog Devices, Inc., For price, delivery, and to place orders, please contact Hittite Microwave One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 20 Alpha Road, Chelmsford, MA 01824 Phone:Phone: 978-250-3343 978-250-3373 781-329-4700Fax: • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D Order On-line at www.hittite.com Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. HMC-ALH216 v03.0209 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 14 - 27 GHz Pad Number Function Description 1 RFIN This pad is AC coupled and matched to 50 Ohms. 2, 6 Vdd Power Supply Voltage for the amplifier. See assembly for required external components. 3, 5 Vgg Gate control for amplifier. Please follow “MMIC Amplifier Biasing Procedure” application note. See assembly for required external components. 4 RFOUT This pad is AC coupled and matched to 50 Ohms. Die bottom GND Die bottom must be connected to RF/DC ground. Interface Schematic For price, delivery, and to placeCorporation: orders: Analog Devices, Inc., For price, delivery, and to place orders, please contact Hittite Microwave One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 20 Alpha Road, Chelmsford, MA 01824 Phone: Phone: 978-250-3343 978-250-3373 781-329-4700Fax: • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D Order On-line at www.hittite.com Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. LOW NOISE AMPLIFIERS - CHIP 1 Pad Descriptions 1 - 129 HMC-ALH216 v03.0209 Assembly Diagram LOW NOISE AMPLIFIERS - CHIP 1 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 14 - 27 GHz Note 1: Bypass caps should be 100 pF (approximately) ceramic (single-layer) placed no farther than 30 mils from the amplifier Note 2: Best performance obtained from use of