Data Sheet
0.01 GHz to 10 GHz, GaAs, pHEMT, MMIC,
Low Noise Amplifier
HMC8410
FEATURES
FUNCTIONAL BLOCK DIAGRAM
Low noise figure: 1.1 dB typical
High gain: 19.5 dB typical
High output third-order intercept (IP3): 33 dBm typical
6-lead, 2 mm × 2 mm LFCSP package
HMC8410
RFIN/VGG1
RFOUT/VDD
14657-001
APPLICATIONS
Software defined radios
Electronic warfare
Radar applications
Figure 1.
GENERAL DESCRIPTION
The HMC8410 is a gallium arsenide (GaAs), monolithic
microwave integrated circuit (MMIC), pseudomorphic high
electron mobility transistor (pHEMT), low noise wideband
amplifier that operates from 0.01 GHz to 10 GHz. The HMC8410
provides a typical gain of 19.5 dB, a 1.1 dB typical noise figure,
and a typical output IP3 of 33 dBm, requiring only 65 mA from
a 5 V supply voltage. The saturated output power (PSAT) of up to
22.5 dBm enables the low noise amplifier (LNA) to function as a
local oscillator (LO) driver for many of Analog Devices, Inc.,
balanced, I/Q or image rejection mixers.
Rev. E
The HMC8410 also features inputs/outputs (I/Os) that are
internally matched to 50 Ω, making it ideal for surface-mounted
technology (SMT)-based, high capacity microwave radio
applications.
The HMC8410 is housed in a RoHS-compliant, 2 mm × 2 mm,
LFCSP package.
Multifunction pin names can be referenced by their relevant
function only.
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HMC8410
Data Sheet
TABLE OF CONTENTS
Features .............................................................................................. 1
Pin Configuration and Function Descriptions .............................6
Applications ...................................................................................... 1
Interface Schematics .....................................................................6
Functional Block Diagram .............................................................. 1
Typical Performance Characteristics .............................................7
General Description ......................................................................... 1
Theory of Operation ...................................................................... 13
Revision History ............................................................................... 2
Applications Information ............................................................. 14
Electrical Specifications ................................................................... 3
Recommended Bias Sequencing .............................................. 14
0.01 GHz to 3 GHz Frequency Range ....................................... 3
Typical Application Circuit ...................................................... 14
3 GHz to 8 GHz Frequency Range ............................................. 3
Evaluation Board ............................................................................ 15
8 GHz to 10 GHz Frequency Range .......................................... 4
Evaluation Board Schematic ..................................................... 16
Absolute Maximum Ratings ........................................................... 5
Outline Dimensions ....................................................................... 17
ESD Caution.................................................................................. 5
Ordering Guide .......................................................................... 17
REVISION HISTORY
3/2020—Rev. D to Rev. E
Changes to Figure 16 ....................................................................... 8
Deleted Figure 38; Renumbered Sequentially ............................ 13
Added Figure 38; Renumbered Sequentially .............................. 13
Changes to Theory of Operation Section.................................... 13
Changes to Table 6 ......................................................................... 16
6/2019—Rev. C to Rev. D
Changes to Table 4 ........................................................................... 5
Changes to Figure 11 ....................................................................... 7
Changes to Figure 25 ..................................................................... 10
1/2019—Rev. B to Rev. C
Changes to Figure 11 ....................................................................... 7
Added Figure 16, Renumbered Sequentially ................................ 8
Updated Outline Dimensions ....................................................... 17
9/2018—Rev. A to Rev. B
Changes to Return Loss Parameter, Table 2..................................3
Changes to Return Loss Parameter, Table 3..................................4
Changes to Figure 38 ..................................................................... 14
11/2017—Rev. 0 to Rev. A
Change to Noise Figure Parameter, Table 1 ..................................3
Change to Continuous Power Dissipation (PDISS) Parameter,
Table 4 .................................................................................................5
Changes to Figure 11 ........................................................................7
Changes to Figure 17 ........................................................................8
Changes to Figure 18 and Figure 20 Caption ................................9
Changes to Figure 33 and Figure 34 Caption ............................. 11
Added Figure 36; Renumbered Sequentially .............................. 12
Updated Outline Dimensions ...................................................... 17
Changes to Ordering Guide .......................................................... 17
7/2016—Revision 0: Initial Version
Rev. E | Page 2 of 17
Data Sheet
HMC8410
ELECTRICAL SPECIFICATIONS
0.01 GHz TO 3 GHz FREQUENCY RANGE
TA = 25°C, VDD = 5 V, and IDQ = 65 mA, unless otherwise noted.
Table 1.
Parameter
FREQUENCY RANGE
GAIN
Gain Variation Over Temperature
NOISE FIGURE
RETURN LOSS
Input
Output
OUTPUT
Output Power for 1 dB Compression
Saturated Output Power
Output Third-Order Intercept
SUPPLY CURRENT
SUPPLY VOLTAGE
Symbol
P1dB
PSAT
IP3
IDQ
VDD
Min
0.01
17.5
Typ
19.5
0.01
1.1
19.0
2
Max
3
1.6
Unit
GHz
dB
dB/°C
dB
15
24
dB
dB
21.0
22.5
33
65
5
dBm
dBm
dBm
mA
V
80
6
Test Conditions/Comments
0.3 GHz to 3 GHz
Adjust VGG1 to achieve IDQ = 65 mA typical
3 GHz TO 8 GHz FREQUENCY RANGE
TA = 25°C, VDD = 5 V, and IDQ = 65 mA, unless otherwise noted.
Table 2.
Parameter
FREQUENCY RANGE
GAIN
Gain Variation Over Temperature
NOISE FIGURE
RETURN LOSS
Input
Output
OUTPUT
Output Power for 1 dB Compression
Saturated Output Power
Output Third-Order Intercept
SUPPLY CURRENT
SUPPLY VOLTAGE
Symbol
P1dB
PSAT
IP3
IDQ
VDD
Min
3
15.5
18.0
2
Typ
18
0.01
1.4
Max
8
1.9
Unit
GHz
dB
dB/°C
dB
10
16
dB
dB
21.0
22.5
31.5
65
5
dBm
dBm
dBm
mA
V
80
6
Rev. E | Page 3 of 17
Test Conditions/Comments
Adjust VGG1 to achieve IDQ = 65 mA typical
HMC8410
Data Sheet
8 GHz TO 10 GHz FREQUENCY RANGE
TA = 25°C, VDD = 5 V, and IDQ = 65 mA, unless otherwise noted.
Table 3.
Parameter
FREQUENCY RANGE
GAIN
Gain Variation Over Temperature
NOISE FIGURE
RETURN LOSS
Input
Output
OUTPUT
Output Power for 1 dB Compression
Saturated Output Power
Output Third-Order Intercept
SUPPLY CURRENT
SUPPLY VOLTAGE
Symbol
P1dB
PSAT
IP3
IDQ
VDD
Min
8
13
Typ
16
0.01
1.7
17.5
2
Max
10
2.2
Unit
GHz
dB
dB/°C
dB
8
7
dB
dB
19.5
21.5
33
65
5
dBm
dBm
dBm
mA
V
80
6
Rev. E | Page 4 of 17
Test Conditions/Comments
Adjust VGG1 to achieve IDQ = 65 mA typical
Data Sheet
HMC8410
ABSOLUTE MAXIMUM RATINGS
Table 4.
Parameter1
Drain Bias Voltage (VDD)
Radio Frequency (RF) Input Power (RFIN)
Continuous Power Dissipation (PDISS), T = 85°C
(Derate 7.8 mW/°C above 85°C)
Channel Temperature
Storage Temperature Range
Operating Temperature Range
Thermal Resistance (Channel to Ground
Paddle)
Maximum Peak Reflow Temperature (MSL3)2
ESD Sensitivity
Human Body Model (HBM)
Rating
7 V dc
20 dBm
0.7 W
175°C
−65°C to +150°C
−40°C to +85°C
128.92°C/W
Stresses at or above those listed under Absolute Maximum
Ratings may cause permanent damage to the product. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the
operational section of this specification is not implied.
Operation beyond the maximum operating conditions for
extended periods may affect product reliability.
ESD CAUTION
260°C
Class1B Passed
500 V
1
When referring to a single function of a multifunction pin in the parameters,
only the portion of the pin name that is relevant to the specification is listed.
For the full pin names of multifunction pins, refer to the Pin Configuration
and Function Descriptions section.
2
See the Ordering Guide section for more information.
Rev. E | Page 5 of 17
HMC8410
Data Sheet
GND 1
RFIN/VGG1 2
NIC 3
HMC8410
TOP VIEW
(Not to Scale)
6
NIC
5
RFOUT/VDD
4
NIC
NOTES
1. NIC = NOT INTERNALLY CONNECTED. THIS PIN
MUST BE CONNECTED TO THE RF/DC GROUND.
2. EXPOSED PAD. THE EXPOSED PAD MUST BE
CONNECTED TO RF/DC GROUND.
14657-002
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
Figure 2. Pin Configuration
Table 5. Pin Function Descriptions
Pin No.
1
2
Mnemonic
GND
RFIN/VGG1
3, 4, 6
5
NIC
RFOUT/VDD
EPAD
Description
Ground. This pin must be connected to the RF/dc ground. See Figure 3 for the interface schematic.
RF Input (RFIN). This pin is ac-coupled and matched to 50 Ω. See Figure 4 for the interface schematic.
Gate Bias of the Amplifier (VGG1). This pin is ac-coupled and matched to 50 Ω. See Figure 4 for the interface
schematic.
Not Internally Connected. This pin must be connected to the RF/dc ground.
RF Output (RFOUT). This pin is ac-coupled and matched to 50 Ω. See Figure 5 for the interface schematic.
Drain Bias for Amplifier (VDD). This pin is ac-coupled and matched to 50 Ω. See Figure 5 for the interface schematic.
Exposed Pad. The exposed pad must be connected to RF/dc ground.
INTERFACE SCHEMATICS
14657-003
GND
14657-005
RFOUT/VDD
Figure 5. RFOUT/VDD Interface Schematic
RFIN/VGG1
14657-004
Figure 3. GND Interface Schematic
Figure 4. RFIN/VGG1 Interface Schematic
Rev. E | Page 6 of 17
Data Sheet
HMC8410
TYPICAL PERFORMANCE CHARACTERISTICS
25
22
–40°C
+25°C
+85°C
20
15
10
18
GAIN (dB)
5
0
–5
16
14
–10
12
–15
–20
0
1
2
3
4
5
6
7
8
9
10
FREQUENCY (GHz)
8
0
0
6
8
10
Figure 9. Gain vs. Frequency for Various Temperatures
0
–40°C
+25°C
+85°C
–40°C
+25°C
+85°C
OUTPUT RETURN LOSS (dB)
–4
INPUT RETURN LOSS (dB)
4
FREQUENCY(GHz)
Figure 6. Gain and Return Loss vs. Frequency
–2
2
14657-009
–30
10
S21
S11
S22
–25
14657-006
GAIN (dB) AND RETURN LOSS (dB)
20
–6
–8
–10
–12
–14
–16
–5
–10
–15
–20
0
1
2
3
4
5
6
7
8
9
10
FREQUENCY (GHz)
–25
14657-007
–20
Figure 7. Input Return Loss vs. Frequency for Various Temperatures
1
2
3
4
5
6
7
8
9
10
FREQUENCY (GHz)
Figure 10. Output Return Loss vs. Frequency for Various Temperatures
4.0
11
–40°C
+25°C
+85°C
3.5
0
14657-010
–18
–40°C
+25°C
+85°C
10
9
NOISE FIGURE (dB)
8
2.5
2.0
1.5
7
6
5
4
3
1.0
2
0.5
0
2
4
6
8
10
FREQUENCY (GHz)
0
10
25
40
55
70
85 100 115 130 145 160 175 190 205
FREQUENCY (MHz)
Figure 8. Noise Figure vs. Frequency for Various Temperatures
Figure 11. Noise Figure vs. Frequency for Various Temperatures,
10 MHz to 200 MHz
Rev. E | Page 7 of 17
14657-011
1
0
14657-008
NOISE FIGURE (dB)
3.0
HMC8410
25
Data Sheet
50
–40°C
+25°C
+85°C
24
45
23
OUTPUT IP2 (dBm)
P1dB (dBm)
22
21
20
19
18
17
40
35
30
25
0
2
4
6
8
10
FREQUENCY (GHz)
20
14657-012
15
0
2
4
6
Figure 12. P1dB vs. Frequency for Various Temperatures
10
Figure 15. Output IP2 vs. Frequency at POUT/Tone = 5 dBm
25
55
24
65mA
85mA
105mA
125mA
140mA
50
23
45
OUTPUT IP2 (dB)
22
PSAT (dBm)
8
FREQUENCY (GHz)
14657-015
16
21
20
19
18
40
35
30
17
4
6
8
10
FREQUENCY (GHz)
20
0
0
36
34
REVERSE ISOLATION (dB)
28
26
24
22
8
10
–10
–15
–20
–25
–30
–40°C
+25°C
+85°C
2
4
6
8
10
FREQUENCY GHz)
–35
14657-014
OUTPUT IP3 (dBm)
30
0
6
–40°C
+25°C
+85°C
–5
32
18
4
FREQUENCY (GHz)
Figure 16. Output IP2 vs. Frequency for Various Supply Currents (IDQ),
POUT/Tone=5 dBm, VDD = 5 V
Figure 13. PSAT vs. Frequency for Various Temperatures
20
2
14657-116
2
0
1
2
3
4
5
6
FREQUENCY (GHz)
Figure 14. Output IP3 vs. Frequency for Various Temperatures,
Output Power (POUT)/Tone = 5 dBm
7
8
9
10
14657-016
0
14657-013
15
25
–40°C
+25°C
+85°C
16
Figure 17. Reverse Isolation vs. Frequency for Various Temperatures
Rev. E | Page 8 of 17
Data Sheet
HMC8410
30
28
26
24
22
20
40
35
90
30
85
25
80
20
75
15
70
10
65
5
60
0dBm
5dBm
2
4
10
8
6
FREQUENCY (GHz)
0
–10
14657-017
0
95
–5
0
55
10
5
INPUT POWER (dBm)
Figure 18. Output IP3 vs. Frequency for Various POUT/Tone
Figure 21. POUT, Gain, PAE, and Supply Current with RF Applied (IDD) vs.
Input Power at 5 GHz
40
55
PAE
PSAT
35
PSAT (dBm) AND PAE (%)
45
30
25
20
0.2
0.3
35
30
25
20
15
5
0.4
0.5
0.6
0.7
0.8
0.9
1.0
FREQUENCY (GHz)
0
0
2
Figure 19. Gain, P1dB, PSAT, and Output IP3 vs. Frequency
0.6
PAE
P1dB
0.5
POWER DISSIPATION (W)
30
25
20
15
10
8
10
1GHz
3GHz
5GHz
7GHz
9GHz
0.4
0.3
0.2
0.1
5
0
0
2
4
6
8
10
FREQUENCY (GHz)
Figure 20. P1dB and Power Added Efficiency (PAE) vs. Frequency
0
–10
14657-019
P1dB (dBm) AND PAE (%)
6
Figure 22. PSAT and PAE vs. Frequency
40
35
4
FREQUENCY (GHz)
14657-021
10
0.1
40
10
GAIN
P1dB
PSAT
OUTPUT IP3
15
14657-018
GAIN (dB), P1dB (dBm), PSAT (dBm),
AND OUTPUT IP3 (dBm)
50
–8
–6
–4
–2
0
2
4
6
INPUT POWER (dBm)
8
10
12
14
14657-022
OUTPUT IP3 (dBm)
32
POUT
GAIN
PAE
IDD
IDD (mA)
POUT (dBm), GAIN (dB), AND PAE (%)
34
18
100
45
14657-020
36
Figure 23. Power Dissipation at 85°C vs. Input Power at Various Frequencies
Rev. E | Page 9 of 17
HMC8410
Data Sheet
20
24
23
PSAT (dBm)
18
16
14
22
21
12
20
10
19
8
0
2
4
6
8
10
FREQUENCY (GHz)
18
14657-023
GAIN (dB)
25
5mA
15mA
25mA
35mA
45mA
65mA
70mA
75mA
5mA
15mA
25mA
35mA
45mA
65mA
70mA
75mA
0
2
4
6
8
10
FREQUENCY (GHz)
Figure 24. Gain vs. Frequency for Various Supply Currents, VDD = 5 V
14657-026
22
Figure 27. PSAT vs. Frequency for Various Supply Currents (IDQ), VDD = 5 V
8
45
15mA
35mA
65mA
75mA
5mA
25mA
45mA
70mA
7
5mA
15mA
25mA
35m
40
45mA
65mA
70mA
75mA
OUTPUT IP3 (dBm)
NOISE FIGURE (dB)
6
5
4
3
35
30
25
2
0
1
2
3
4
5
6
7
8
9
10
FREQUENCY (GHz)
15
14657-024
0
0
2
4
6
8
10
FREQUENCY (GHz)
Figure 25. Noise Figure vs. Frequency for Various Supply Currents (IDQ),
VDD = 5 V
14657-027
20
1
Figure 28. Output IP3 vs. Frequency for Various Supply Currents (IDQ),
POUT/Tone = 5 dBm, VDD = 5 V
25
22
2V
3V
4V
5V
6V
7V
20
20
15
GAIN (dB)
P1dB (dBm)
18
10
16
14
12
5
0
2
10
4
6
FREQUENCY (GHz)
8
10
8
0
2
4
6
FREQUENCY (GHz)
Figure 26. P1dB vs. Frequency for Various Supply Currents (IDQ), VDD = 5 V
8
10
14657-028
0
15mA
35mA
65mA
75mA
14657-025
5mA
25mA
45mA
70mA
Figure 29. Gain vs. Frequency for Various Supply Voltages, IDQ = 65 mA
Rev. E | Page 10 of 17
Data Sheet
HMC8410
45
4.0
2V
3V
4V
5V
6V
7V
3.5
40
OUTPUT IP3 (dBm)
NOISE FIGURE (dB)
3.0
2V
3V
4V
5V
6V
7V
2.5
2.0
1.5
35
30
25
1.0
20
0
2
4
6
8
10
FREQUENCY (GHz)
15
14657-129
0
0
2
4
6
8
10
FREQUENCY (GHz)
Figure 30. Noise Figure vs. Frequency for Various Supply Voltages, IDQ = 65 mA
14657-132
0.5
Figure 33. Output IP3 vs. Frequency for Various Supply Voltages,
POUT/Tone = 5 dBm
90
24
80
22
70
20
IDQ (mA)
P1dB (dBm)
60
18
16
50
40
30
14
2V
3V
4V
5V
6V
7V
0
10
2
4
6
8
10
FREQUENCY (GHz)
0
–0.90 –0.85 –0.80 –0.75 –0.70 –0.65 –0.60 –0.55 –0.50 –0.45
VGG1 (V)
Figure 31. P1dB vs. Frequency for Various Supply Voltages, IDQ = 65 mA
14657-133
10
20
14657-130
12
Figure 34. Supply Current (IDQ) vs. VGG1, VDD = 5 V,
Representative of a Typical Device
27
120
25
100
23
5mA
25mA
45mA
70mA
80mA
15mA
35mA
65mA
75mA
40
17
2V
3V
4V
5V
6V
7V
15
13
60
0
20
2
4
6
FREQUENCY (GHz)
8
10
0
–10
–5
0
5
10
15
INPUT POWER (dBm)
Figure 32. PSAT vs. Frequency for Various Supply Voltages, IDQ = 65 mA
Rev. E | Page 11 of 17
Figure 35. Supply Current with RF Applied (IDD) vs. Input Power for
Various Supply Currents (IDQ) at 5 GHz, VDD = 5 V
14657-134
IDD (mA)
19
14657-131
PSAT (dBm)
80
21
HMC8410
Data Sheet
20
–70
5mA
15mA
25mA
35mA
45mA
65mA
70mA
75mA
80mA
GAIN (dB)
16
–80
–90
PHASE NOISE (dB/Hz)
18
14
12
10
–100
–110
–120
–130
–140
–150
8
–5
0
5
INPUT POWER (dBm)
10
15
–170
Figure 36. Gain vs. Input Power for Various Supply Currents (IDQ) at 5 GHz,
VDD = 5 V
10
100
1k
10k
OFFSET FREQUENCY (Hz)
100k
1M
14657-136
–160
14657-135
6
–10
Figure 37. Additive Phase Noise vs. Offset Frequency, RF Frequency = 5 GHz,
RF Input Power = 3 dBm (P1dB)
Rev. E | Page 12 of 17
Data Sheet
HMC8410
THEORY OF OPERATION
The HMC8410 is a gallium arsenide (GaAs), monolithic
microwave integrated circuit (MMIC), pseudomorphic (pHEMT),
low noise wideband amplifier.
Note that it is critical to supply very low inductance ground
connections to the ground pins as well as to the backside
exposed paddle to ensure stable operation.
The HMC8410 has single-ended input and output ports whose
impedances are nominally equal to 50 Ω over the 0.01 GHz to
10 GHz frequency range. Consequently, it can directly insert
into a 50 Ω system with no required impedance matching
circuitry, which also means that multiple HMC8410 amplifiers
can be cascaded back to back without the need for external
matching circuitry.
To achieve optimal performance from the HMC8410 and prevent
damage to the device, do not exceed the absolute maximum
ratings.
Rev. E | Page 13 of 17
RFIN
RFOUT/VDD
Figure 38. Simplified HMC8410 Architecture
14657-029
The input and output impedances are sufficiently stable vs.
variations in temperature and supply voltage that no impedance
matching compensation is required.
RBIAS
HMC8410
Data Sheet
APPLICATIONS INFORMATION
Figure 39 shows the basic connections for operating the
HMC8410. AC couple the input and output of the HMC8410
with appropriately sized capacitors. DC block capacitors and RF
choke inductors are supplied on the RFIN and RFOUT pins of the
HMC8410 evaluation board. See Table 6 for additional
information. These dc block capacitors and RF choke inductors
form wideband bias tees on the input and output ports to provide
both ac coupling and the necessary supply voltages to the RFIN
and RFOUT pins. A 5 V dc bias is supplied to the amplifier
through the choke inductor connected to the RFOUT pin, and
the negative VGG1 voltage is supplied to the RFIN pin through
the choke inductor.
RECOMMENDED BIAS SEQUENCING
To not damage the amplifier, follow the recommended bias
sequencing.
The recommended bias sequence during power-up for the
HMC8410 follows:
5.
The recommended bias sequence during power-down for the
HMC8410 follows:
1.
2.
3.
4.
Turn off the RF signal.
Decrease VGG1 to −2 V to achieve a typical IDQ = 0 mA.
Decrease VDD to 0 V.
Increase VGG1 to 0 V.
The bias conditions previously listed (VDD = 5 V and IDQ =
65 mA) are the recommended operating points to achieve
optimum performance. The data used in this data sheet was
taken with the recommended bias conditions. When using the
HMC8410 with different bias conditions, different performance
than what is shown in the Typical Performance Characteristics
section can result.
Figure 19, Figure 31, and Figure 32 show that increasing the
voltage from 2 V to 7 V typically increases P1dB and PSAT at the
expense of power consumption with minor degradation on
noise figure (NF).
During Power-Up
1.
2.
3.
4.
During Power-Down
Connect to GND.
Set VGG1 to −2 V.
Set VDD to 5 V.
Increase VGG1 to achieve a typical supply current (IDQ) =
65 mA.
Apply the RF signal.
TYPICAL APPLICATION CIRCUIT
VGG1
+
C14
4.7µF
C13
100nF
+
C5
2.2µF
C12
DNI
C4
100nF
R1
0Ω
C15
20pF
L1
590nH
C16
20pF
HMC8410
RFIN/VGG1
J1
C1
10nF
C3
DNI
1
6
2
5
3
L2
590nH
C2
10nF
4
PACKAGE
BASE
GND
Figure 39. Typical Application Circuit
Rev. E | Page 14 of 17
RFOUT
J2
14657-030
R2
15Ω
VDD
Data Sheet
HMC8410
EVALUATION BOARD
The HMC8410 evaluation board is a 4-layer board fabricated
using a Rogers 4350 and the best practices for high frequency
RF design. The RF input and RF output traces have a 50 Ω
characteristic impedance.
The HMC8410 evaluation board and populated components
operate over the −40°C to +85°C ambient temperature range.
For proper bias sequence, see the Applications Information
section.
14657-031
The HMC8410 evaluation board schematic is shown in Figure 41.
A fully populated and tested evaluation printed circuit board
(PCB) is available from Analog Devices, Inc., upon request
(see Figure 40).
Figure 40. HMC8410 Evaluation PCB
Rev. E | Page 15 of 17
HMC8410
Data Sheet
EVALUATION BOARD SCHEMATIC
VGG1
C13
100nF
C12
DNI
C14
+ 4.7µF
VDD
J8
R2
15Ω
C4
100nF
C3
DNI
R1
0Ω
C15
20pF
C5
2.2µF
J3
C16
20pF
L1
590nH
GND
L2
590nH
HMC8410
1
6
2
5
NIC
RFIN
RFIN/VGG1
J1
C1
10nF
NIC
EPAD
3
4
RFOUT
RFOUT/VDD
J2
C2
10nF
NIC
VGG2
C6
DNI
C7
DNI
C8
DNI
J5
DNI
THRU CAL
J6
C9
C10
DNI
DNI
DNI
J7
DNI
14657-032
GND
J4
Figure 41. HMC8410 Evaluation Board Schematic
Table 6. Bill of Materials for Evaluation PCB EV1HMC8410LP2F
Item
J1, J2
J3, J4, J8
C1, C2
C3, C6 to C10, C12, J5 to J7
C4, C13
C5
C14
C15, C16
L1, L2
R1
R2
U1
Heat sink
PCB
Description
PCB mount SMA RF connectors, SRI 21-146-1000-01
DC bias test points
Capacitors, broadband, 100 nF and 82 pF, 0502, 160 kHz and 40 GHz; ATC531Z104KT16T
Do not install (DNI)
Capacitors, ceramic, 100 nF, 0402 package
Capacitor, tantalum, 2.2 μF, Size A
Capacitor, tantalum, 4.7 μF, 3216 package
Capacitors, ceramic, 20 pF, 0402 package
Inductors, 590 nH, 0402, 5%, ferrite DF, Coilcraft 0402DF-591XJRU
0 Ω resistor
15 Ω resistor, 0402 package
Amplifier, HMC8410
Heat sink
600-01660-00 evaluation PCB; circuit board material: Rogers 4350
Rev. E | Page 16 of 17
Data Sheet
HMC8410
OUTLINE DIMENSIONS
DETAIL A
(JEDEC 95)
1.65
1.60
1.55
2.05
2.00 SQ
1.95
6
4
PIN 1 INDEX
AREA
1.05
1.00
0.95
EXPOSED
PAD
0.20
MIN
P IN 1
IN D IC ATO R AR E A OP T IO N S
(SEE DETAIL A)
PKG-005040
0.90
0.85
0.80
0.05 MAX
0.02 NOM
COPLANARITY
0.08
SIDE VIEW
0.35
0.30
0.25
SEATING
PLANE
1
BOTTOM VIEW
0.65 BSC
FOR PROPER CONNECTION OF
THE EXPOSED PAD, REFER TO
THE PIN CONFIGURATION AND
FUNCTION DESCRIPTIONS
SECTION OF THIS DATA SHEET.
08-17-2018-B
0.30
0.25
0.20
TOP VIEW
3
0.203 REF
Figure 42. 6-Lead Lead Frame Chip Scale Package [LFCSP]
2 mm × 2 mm Body and 0.85 mm Package Height
(CP-6-9)
Dimensions shown in millimeters
ORDERING GUIDE
Model 1
HMC8410LP2FE
HMC8410LP2FETR
EV1HMC8410LP2F
1
2
Temperature Range
−40°C to +85°C
−40°C to +85°C
MSL Rating 2
MSL3
MSL3
Lead Finish
100% Matte Sn
100% Matte Sn
The HMC8410LP2FE and HMC8410LP2FETR are RoHS Compliant Parts.
See the Absolute Maximum Ratings section for additional information.
©2016–2020 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective owners.
D14657-3/20(E)
Rev. E | Page 17 of 17
Package Description
6-Lead LFCSP
6-Lead LFCSP
Evaluation PCB
Package Option
CP-6-9
CP-6-9
工商网监
湘ICP备2023018690号
