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LT1122CS8#TR

LT1122CS8#TR

  • 厂商:

    AD(亚德诺)

  • 封装:

    SOICN8_150MIL

  • 描述:

    IC OPAMP JFET 1 CIRCUIT 8SO

  • 数据手册
  • 价格&库存
LT1122CS8#TR 数据手册
LT1122 Fast Settling, JFET Input Operational Amplifier FEATURES DESCRIPTION 100% Tested Settling Time 340ns Typ to 1mV at Sum Node, 10V Step 540ns Max Tested with Fixed Feedback Capacitor n Slew Rate 60V/µs Min n Gain-Bandwidth Product 14MHz n Power Bandwidth (20V P-P) 1.2 MHz n Unity-Gain Stable; Phase Margin 60° n Input Offset Voltage 600µV Max n Input Bias Current 25°C 75pA Max 70°C 600pA Max ■ Input Offset Current 25°C 40pA Max 70°C 150pA Max ■ Low Distortion The LT®1122 JFET input operational amplifier combines high speed and precision performance. n APPLICATIONS n n n n n n n n A unique poly-gate JFET process minimizes gate series resistance and gate-to-drain capacitance, facilitating wide bandwidth performance, without degrading JFET transistor matching. It slews at 80V/µs and settles in 340ns. The LT1122 is internally compensated to be unity-gain stable, yet it has a bandwidth of 14MHz at a supply current of only 7mA. Its speed makes the LT1122 an ideal choice for fast settling 12-bit data conversion and acquisition systems. The LT1122 offset voltage of 120µV, and voltage gain of 500,000 also support the 12-bit accurate applications. The input bias current of 10pA and offset current of 4pA combined with its speed allow the LT1122 to be used in such applications as high speed sample and hold amplifiers, peak detectors, and integrators. Fast 12-Bit D/A Output Amplifiers High Speed Buffers Fast Sample-and-Hold Amplifiers High Speed Integrators Voltage to Frequency Converters Active Filters Log Amplifiers Peak Detectors L, LT, LTC, LTM, Linear Technology and the Linear logo are registered trademarks and C-Load is a trademark of Linear Technology Corporation. All other trademarks are the property of their respective owners. TYPICAL APPLICATION 12-Bit Voltage Output D/A Converter CF 2 0mA TO 2mA OR 4mA LT1122 3 12-BIT CURRENT OUTPUT D/A CONVERTER CF = 5pF TO 17pF (DEPENDING ON D/A CONVERTER USED) – + 6 VOUT 0V TO 10V LT1122•TA01 5V/DIV + Large-Scale Response 200ns/DIV AV = –1 1122 TA07 1122fb For more information www.linear.com/LT1122 1 LT1122 ABSOLUTE MAXIMUM RATINGS (Note 1) Supply Voltage....................................................... ± 20V Differential Input Voltage........................................ ± 40V Input Voltage........................................................... ± 20V Output Short Circuit Duration........................... Indefinite Lead Temperature (Soldering, 10 sec.)................... 300°C Operating Temperature Range LT1122AM/BM/CM/DM (OBSOLETE)... –55°C to 125°C LT1122AC/BC/CC/DC/CS/DS..................–40°C to 85°C Storage Temperature Range All Devices........................................... –65°C to 150°C PIN CONFIGURATION TOP VIEW 7 SPEED BOOST/ OVERCOMP V+ +IN 3 6 OUT V– 4 5 VOS TRIM VOS 1 TRIM –IN 2 8 TOP VIEW VOS 1 TRIM –IN 2 7 SPEED BOOST/ OVERCOMP V+ +IN 3 6 OUT V– 4 5 VOS TRIM N8 PACKAGE 8-LEAD PDIP 8 TJMAX = 150°C, θJA = 130°C/W S8 PACKAGE 8-LEAD PLASTIC SO OBSOLETE PACKAGE TJMAX = 150°C, θJA = 190°C/W J8 PACKAGE 8-LEAD HERMETIC DIP TJMAX = 175°C, θJA = 100°C/W ORDER INFORMATION LEAD FREE FINISH TAPE AND REEL PART MARKING PACKAGE DESCRIPTION TEMPERATURE RANGE LT1122ACN8#PBF LT1122ACN8#TRPBF LT1122ACN8 8-Lead Plastic DIP –40°C to 85°C LT1122BCN8#PBF LT1122BCN8#TRPBF LT1122BCN8 8-Lead Plastic DIP –40°C to 85°C LT1122CCN8#PBF LT1122CCN8#TRPBF LT1122CCN8 8-Lead Plastic DIP –40°C to 85°C LT1122DCN8#PBF LT1122DCN8#TRPBF LT1122DCN8 8-Lead Plastic DIP –40°C to 85°C LT1122CS8#PBF LT1122CS8#TRPBF 1122C 8-Lead Plastic SO –40°C to 85°C LT1122DS8#PBF LT1122DS8#TRPBF 1122D 8-Lead Plastic SO –40°C to 85°C LT1122AMJ8#PBF LT1122AMJ8#TRPBF LT1122AMJ8 8-Lead Hermetic DIP –55°C to 125°C LT1122BMJ8#PBF LT1122BMJ8#TRPBF LT1122BMJ8 8-Lead Hermetic DIP –55°C to 125°C LT1122CMJ8#PBF LT1122CMJ8#TRPBF LT1122CMJ8 8-Lead Hermetic DIP –55°C to 125°C LT1122DMJ8#PBF LT1122DMJ8#TRPBF LT1122DMJ8 8-Lead Hermetic DIP –55°C to 125°C LT1122ACJ8#PBF LT1122ACJ8#TRPBF LT1122ACJ8 8-Lead Hermetic DIP –40°C to 85°C LT1122BCJ8#PBF LT1122BCJ8#TRPBF LT1122BCJ8 8-Lead Hermetic DIP –40°C to 85°C LT1122CCJ8#PBF LT1122CCJ8#TRPBF LT1122CCJ8 8-Lead Hermetic DIP –40°C to 85°C LT1122DCJ8#PBF LT1122DCJ8#TRPBF LT1122DCJ8 8-Lead Hermetic DIP –40°C to 85°C OBSOLETE PACKAGE Consult LTC Marketing for parts specified with wider operating temperature ranges. Consult LTC Marketing for information on nonstandard lead based finish parts. For more information on lead free part markings, go to: http://www.linear.com/leadfree/ For more information on tape and reel specifications, go to: http://www.linear.com/tapeandreel/ 1122fb 2 For more information www.linear.com/LT1122 LT1122 ELECTRICAL CHARACTERISTICS The l denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. VS = ±15V, VCM = 0V unless otherwise noted. (Note 2) SYMBOL PARAMETER CONDITIONS LT1122AM/BM LT1122AC/BC MIN TYP MAX LT1122CM/DM LT1122CC/DC LT1122CS/DS MIN TYP MAX UNITS VOS Input Offset Voltage 120 600 130 900 µV IOS Input Offset Current 4 40 5 50 pA Input Bias Current 10 75 12 100 pA IB Input Resistance Differential Common Mode VCM = –10V to 8V VCM = 8V to 11V Input Capacitance SR Slew Rate AV = – 1 60 Settling Time (Note 2) 10V to 0V, – 10V to 0V 100% Tested: A- and C-Grades to 1mV at Sum Node B- and D-Grades to 1mV at Sum Node All Grades to 0.5mV at Sum Node GBW Gain-Bandwidth Product Power Bandwidth VOUT = 20VP-P AVOL Large-Signal Voltage Gain CMRR Common-Mode Rejection Ratio VCM = ±10V Input Voltage Range (Note 4) PSRR Power Supply Rejection Ratio VS = ±10V to ±18V Input Noise Voltage 0.1Hz to 10Hz Input Noise Voltage Density VOUT = ±10V, RL = 2kΩ VOUT = ±10V, RL = 600Ω 1012 1012 1011 1012 1012 1011 Ω Ω Ω 4 4 pF 75 V/µs 80 340 350 450 50 540 350 360 470 14 1.2 590 ns ns ns 13 1.1 MHz MHz 180 130 500 250 150 110 450 220 V/mV V/mV 83 99 80 98 dB ±10.5 ±11 ±10.5 ±11 V 86 103 82 101 dB 3.0 3.3 µVP-P fO = 100Hz fO = 10kHz 25 14 27 15 nV/√Hz nV/√Hz Input Noise Current Density fO = 100Hz, fO = 10kHz 2 2 fA/√Hz VOUT Output Voltage Swing RL = 2kΩ RL = 600Ω IS Supply Current ±12 ±12.5 ±11.5 ±12 7.5 Minimum Supply Voltage (Note 5) ±5 Offset Adjustment Range RPOT ≥ 10k, Wiper to V+ ±4 ±12 ±12.5 ±11.5 ±12 10 7.8 ±5 ±10 ±4 V V 11 mA V ±10 mV 1122fb For more information www.linear.com/LT1122 3 LT1122 ELECTRICAL CHARACTERISTICS The l denotes the specifications which apply over the full operating temperature range, otherwise specifications are at 0°C ≤ TA ≤ 70°C. VS = ±15V, VCM = 0V. (Note 2) SYMBOL PARAMETER CONDITIONS LT1122AC/BC MIN TYP MAX LT1122CC/DC LT1122CS/DS MIN TYP MAX UNITS Input Offset Voltage l 350 1400 400 2000 Average Temperature Coefficient of Input Offset Voltage l 5 18 6 25 µV/°C IOS Input Offset Current l 12 150 15 200 pA IB Input Bias Current l 80 600 90 800 pA AVOL Large-Signal Voltage Gain VOUT = ±10V, RL ≥ 2kΩ l 120 380 100 340 V/mV CMRR Common-Mode Rejection Ratio VCM = ±10V l 82 98 78 96 dB Power Supply Rejection Ratio VS = ±10V to ±17V VOS PSRR Input Voltage Range µV l 84 101 80 99 dB l ±10 ±10.8 ±10 ±10.8 V VOUT Output Voltage Swing RL = 2kΩ l ±11.5 ±12.4 ±11.5 ±12.4 SR Slew Rate AV = –1 l 50 70 40 65 V V/µs The l denotes the specifications which apply over the full operating temperature range, otherwise specifications are at –55°C ≤ TA ≤ 125°C. VS = ±15V, VCM = 0V. (Note 2) SYMBOL PARAMETER VOS CONDITIONS LT1122AM/BM MIN TYP MAX LT1122CS/DS MIN TYP MAX UNITS Input Offset Voltage l 650 2400 800 3400 µV Average Temperature Coefficient of Input Offset Voltage l 6 18 7 25 µV/°C IOS Input Offset Current l 0.5 6 0.6 9 nA IB Input Bias Current l 6 25 7 35 nA AVOL Large-Signal Voltage Gain VOUT = ±10V, RL ≥ 2kΩ l 70 230 60 200 V/mV CMRR Common-Mode Rejection Ratio VCM = ±10V l 80 97 76 94 dB Power Supply Rejection Ratio VS = ±10V to ±17V PSRR Input Voltage Range l 83 100 78 98 dB l ±10 ±10.5 ±10 ±10.5 V VOUT Output Voltage Swing RL = 2kΩ l ±11.3 ±12.1 ±11.3 ±12.1 SR Slew Rate AV = –1 l 45 60 35 55 V V/µs The l denotes the specifications which apply over the full operating temperature range, otherwise specifications are at –40°C ≤ TA ≤ 85°C. VS = ±15V, VCM = 0V. (Note 6) SYMBOL PARAMETER CONDITIONS LT1122AM/BM MIN TYP MAX LT1122CS/DS MIN TYP MAX UNITS Input Offset Voltage l 450 1900 500 2700 Average Temperature Coefficient of Input Offset Voltage l 6 20 7 28 IOS Input Offset Current l 30 600 40 900 pA IB Input Bias Current l 230 2000 260 2700 pA AVOL Large-Signal Voltage Gain VOUT = ±10V, RL ≥ 2kΩ l 95 340 80 300 V/mV CMRR Common-Mode Rejection Ratio VCM = ±10V l 80 98 76 96 dB PSRR Power Supply Rejection Ratio VS = ±10V to ±17V l 83 100 78 98 dB l ±10 ±10.6 ±10 ±10.6 V VOUT Output Voltage Swing RL = 2kΩ l ±11.3 ±12.2 ±11.3 ±12.2 V SR Slew Rate AV = –1 l 45 60 35 60 VOS Input Voltage Range µV µV/°C V/µs 1122fb 4 For more information www.linear.com/LT1122 LT1122 ELECTRICAL CHARACTERISTICS Note 4: Input voltage range functionality is assured by testing offset voltage at the input voltage range limits to a maximum of 4mV (A, B grades), to 5.7mV (C, D grades). Note 5: Minimum supply voltage is tested by measuring offset voltage to 7mV maximum at ±5V supplies. Note 6: The LT1122 is not tested and not quality-assurance-sampled at –40°C and at 85°C. These specifications are guaranteed by design, correlation and/or inference from –55°C, 0°C, 25°C, 70°C and/or 125°C tests. Note 1: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to any Absolute Maximum Rating condition for extended periods may affect device reliability and lifetime. Note 2: The LT1122 is measured in an automated tester in less than one second after application of power. Depending on the package used, power dissipation, heat sinking, and air flow conditions, the fully warmed up chip temperature can be 10°C to 50°C higher than the ambient temperature. Note 3: Settling time is 100% tested for A- and C-grades using the settling time test circuit shown. This test is not included in quality assurance sample testing. Settling Time Test Fixture DEVICE UNDER TEST 5pF 10V (REGULATED) 7 1 51Ω 6 1 16 2 – 2 15 3 14 7 LT1122 3 5 –15V 4 1 HA5002 5 + 6 4 –15V 5.1k 1% 5.1k* 1% V IN (MEASURE INPUT PULSE HERE) 13 LTC201A 3 2 5 12 6 11 7 10 8 9 15V + 15V 0.1µF 7 1k 1µF TANT TYPICAL SUPPLY BYPASSING FOR EACH AMP/BUFFER SETTLING TIME OUTPUT (20 TIMES SUM NODE OUTPUT) 1N5712 7 15V NO CONNECTION ON PINS 10, 11, 12, 14, AND 15 –10V (REGULATED) 6 + HA5002 2 LT1223 4 3 51Ω 8 1 – 2 1.5k –15V –15V 4 51Ω SUMMING NODE OUTPUT 5 79Ω 1N5712 –15V 0.1µF + TTL IN 4 15V 2k 1% 51Ω 8 2 4 74LS00 GROUND ALL OTHER INPUTS 2k 1% 15V 1µF TANT *THIS RESISTOR CAN BE ADJUSTED TO NULL OUT ALL OFFSETS AT THE SETTLING TIME OUTPUT. THE AUTOMATED TESTER USES A SEPARATE AUTOZERO CIRCUIT. LT1122•TA02 1122fb For more information www.linear.com/LT1122 5 LT1122 TYPICAL PERFORMANCE CHARACTERISTICS Settling Time (Input from 0V to 10V) 1mV/DIV AT SUM NODE 1mV/DIV AT SUM NODE Settling Time (Input from 10V to 0V) 1mV/DIV AT SUM NODE Settling Time (Input from –10V to 0V) 100ns/DIV 1122 G01 100ns/DIV Settling Time (Input from 0V to –10V) 100ns/DIV 1122 G02 1122 G03 Undistorted Output Swing vs Frequency Large-Signal Response PEAK-TO-PEAK OUTPUT SWING (V) 5V/DIV 1mV/DIV AT SUM NODE 30 100ns/DIV AV = 1 1122 G04 200ns/DIV 1122 G05 VS = ±15V TA = 25°C 25 20 15 10 5 0 100k 1M 10M 100M FREQUENCY (Hz) 1122 TPC01 Voltage Gain vs Frequency 80 VS = ±15V TA = 25°C 100 100 20 GAIN (dB) GAIN (dB) 40 20 140 10 160 180 0 200 0 VS = ±15V 10 TA = 25°C C L = 15pF –20 –40 1 10 100 1k 10k 100k 1M 10M 100M FREQUENCY (Hz) 1M 10M 100M VS = ±15V TA = 25°C 100 80 60 40 20 0 100 1k 10k 100k 1M 10M 100M FREQUENCY (Hz) FREQUENCY (Hz) 1122 TPC02 PHASE SHIFT (DEGREES) 120 80 60 120 COMMON-MODE REJECTION RATIO (dB) 120 Common-Mode Rejection vs Frequency Gain, Phase vs Frequency 1122 TPC03 1122 TPC04 1122fb 6 For more information www.linear.com/LT1122 LT1122 TYPICAL PERFORMANCE CHARACTERISTICS Distribution of Input Offset Voltage NUMBER OF UNITS 600 400 200 0 –900 –100 100 –500 100k 10k 3k BIAS CURRENT 1k 300 100 30 OFFSET CURRENT 10 3 1 900 500 120 VS = ±15V 30k VCM = 0V 25 0 50 75 VOLTAGE NOISE DENSITY (nV/√Hz) CHANGE IN OFFSET VOLTAGE (µV) SO PACKAGE N PACKAGE 150 J PACKAGE 100 50 IN STILL AIR (SO PACKAGE SOLDERED ONTO BOARD) 1 2 1 3 10 100 300 1k 3k 10k AV = –10 AV = –1 100 1k 10k 20k FREQUENCY (Hz) 15 4 6 8 10 1122 TPC10 0.1 0.01 AV = 50 AV = 10 0.001 0.0001 20 AV =1 100 T A = 25°C VS = ±15V Z L = 5k//15pF VO = 7V RMS 1k 10k 20k Intermodulation Distortion (CCIF Method) vs Frequency LT1122 and LF156* 0.1 0.01 VS = ±15V T A = 25°C AV = –10 VO = 7V RMS Z L = 5k//15pF LF156 0.001 LT1122 0.0001 3k 10k 20k FREQUENCY (Hz) FREQUENCY (Hz) 1122 TPC11 10 5 0 TIME (SECONDS) Total Harmonic Distortion + Noise vs Frequency Noninverting Gain AV = –50 2 0 FREQUENCY (Hz) TOTAL HARMONIC DISTORTION + NOISE (%) TOTAL HARMONIC DISTORTION + NOISE (%) 30 Total Harmonic Distortion + Noise vs Frequency Inverting Gain 0.01 5 1122 TPC07 100 10 3 T A = 25°C VS = ±15V Z L = 5k//15pF VO = 7V RMS 10 0.1Hz to 10Hz Noise 1122 TPC09 0.0001 20 15 COMMON-MODE INPUT VOLTAGE (V) 1122 TPC08 0.001 0 VS = ±15V TA = 25°C TIME AFTER POWER ON (MINUTES) 0.1 OFFSET CURRENT 20 Noise Spectrum 1000 200 0 40 NOISE VOLTAGE (1µV/DIV) Warm-Up Drift VS = ±15V TA = 25°C BIAS CURRENT 60 1122 TPC06 1122 TPC05 1 80 125 100 VS = ±15V TA = 25°C (NOT-WARMED UP) 100 CHIP TEMPERATURE (°C) INPUT OFFSET VOLTAGE (µV) 250 INPUT BIAS AND OFFSET CURRENT (pA) VS = ±15V TA = 25°C (NOT WARMED UP) Bias and Offset Currents Over the Common-Mode Range INTERMODULATION DISTORTION (IMD) (%) 3370 UNITS TESTED IN ALL PACKAGES INPUT BIAS AND OFFSET CURRENTS (pA) 800 Input Bias and Offset Currents Over Temperature 1122 TPC12 *SEE LT1115 DATA SHEET FOR DEFINITION OF CCIF TESTING 1122 TPC13 1122fb For more information www.linear.com/LT1122 7 LT1122 APPLICATIONS INFORMATION Settling time test circuits shown on some competitive devices’ data sheets require: 1. A “flat top” pulse generator. Unfortunately, flat top pulse generators are not commercially available. 2. A variable feedback capacitor around the device under test. This capacitor varies over a four-to-one range. Presumably, as each op amp is measured for settling time, the capacitor is fine tuned to optimize settling time for that particular device. The power supply connections to the LT1122 must maintain a low impedance to ground over a bandwidth of 20MHz. This is especially important when driving a significant resistive or capacitive load, since all current delivered to the load comes from the power supplies. Multiple high quality bypass capacitors are recommended for each power supply line in any critical application. A 0.1µF ceramic and a 1µF electrolytic capacitor, as shown, placed as close as possible to the amplifier (with short lead lengths to power supply common) will assure adequate high frequency bypassing, in most applications. 3. A small inductor load to optimize settling. V+ The LT1122’s settling time is 100% tested in the test circuit shown. No “flat top” pulse generator is required. The test circuit can be readily constructed, using commercially available ICs. Of course, standard high frequency board construction techniques should be followed. All LT1122s are measured with a constant feedback capacitor. No fine tuning is required. Speed Boost/Overcompensation Terminal Pin 8 of the LT1122 can be used to change the input stage operating current of the device. Shorting Pin 8 to the positive supply (Pin 7) increases slew rate and bandwidth by about 25%, but at the expense of a reduction in phase margin by approximately 18 degrees. Unity-gain capacitive load handling decreases from typically 500pF to 100pF. Conversely, connecting a 15k resistor from Pin 8 to ground pulls 1mA out of Pin 8 (with V+ = 15V). This reduces slew rate and bandwidth by 25%. Phase margin and capacitive load handling improve; the latter typically increasing to 800pF. 2 3 + 7 – 1µF 0.1µF 1µF 0.1µF 6 LT1122 + 4 + Settling Time Measurements V– 1122 TA03 When the feedback around the op amp is resistive (RF), a pole will be created with RF, the source resistance and capacitance (RS, CS), and the amplifier input capacitance (CIN ≈ 4pF). In low closed-loop gain configurations and with RS and RF in the kilohm range, this pole can create excess phase shift and even oscillation. A small capacitor (CF) in parallel with RF eliminates this problem. With RS (CS + CIN) = RFCF, the effect of the feedback pole is completely removed. CF RF High Speed Operation – As with most high speed amplifiers, care should be taken with supply decoupling, lead dress and component placement. RS CS CIN OUTPUT + 1122 TA04 1122fb 8 For more information www.linear.com/LT1122 LT1122 TYPICAL APPLICATIONS Quartz Stabilized Oscillator With 9ppm Distortion OUTPUT –15V 4.7k LT1004 2.5V 15V + LT1122 430pF 50k 4.7k LT1010 – DISTORTION TRIM 5k + 4.7k 47k 4kHz J CUT OUTPUT AMPLITUDE 10µF TRIM MOUNT IN CLOSE PROXIMITY – LT1006 + 560k 470W 15V 2k – 1M 15V LT1122 + GROUND CRYSTAL CASE 560k = VACTEC VTL5C10 OR CLAIREX CLM410 –15V 1/4 LTC201 Q1 2N3904 100k = 1N4148 1122 TA05 1122fb For more information www.linear.com/LT1122 9 LT1122 PACKAGE DESCRIPTION Please refer to http://www.linear.com/designtools/packaging/ for the most recent package drawings. N Package 8-Lead PDIP (Narrow .300 Inch) (Reference LTC DWG # 05-08-1510 Rev I) .400* (10.160) MAX 8 7 6 5 1 2 3 4 .255 ±.015* (6.477 ±0.381) .300 – .325 (7.620 – 8.255) .008 – .015 (0.203 – 0.381) ( +.035 .325 –.015 8.255 +0.889 –0.381 ) .045 – .065 (1.143 – 1.651) .065 (1.651) TYP .100 (2.54) BSC .130 ±.005 (3.302 ±0.127) .120 (3.048) .020 MIN (0.508) MIN .018 ±.003 N8 REV I 0711 (0.457 ±0.076) NOTE: 1. DIMENSIONS ARE INCHES MILLIMETERS *THESE DIMENSIONS DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS. MOLD FLASH OR PROTRUSIONS SHALL NOT EXCEED .010 INCH (0.254mm) 1122fb 10 For more information www.linear.com/LT1122 LT1122 PACKAGE DESCRIPTION Please refer to http://www.linear.com/designtools/packaging/ for the most recent package drawings. J8 Package 3-Lead CERDIP (Narrow .300 Inch, Hermetic) (Reference LTC DWG # 05-08-1110) CORNER LEADS OPTION (4 PLCS) .023 – .045 (0.584 – 1.143) HALF LEAD OPTION .045 – .068 (1.143 – 1.650) FULL LEAD OPTION .005 (0.127) MIN .405 (10.287) MAX 8 7 6 5 .025 (0.635) RAD TYP .220 – .310 (5.588 – 7.874) 1 .300 BSC (7.62 BSC) 2 3 4 .200 (5.080) MAX .015 – .060 (0.381 – 1.524) .008 – .018 (0.203 – 0.457) 0° – 15° NOTE: LEAD DIMENSIONS APPLY TO SOLDER DIP/PLATE OR TIN PLATE LEADS .045 – .065 (1.143 – 1.651) .014 – .026 (0.360 – 0.660) .100 (2.54) BSC .125 3.175 MIN J8 0801 OBSOLETE PACKAGE 1122fb For more information www.linear.com/LT1122 11 LT1122 PACKAGE DESCRIPTION Please refer to http://www.linear.com/designtools/packaging/ for the most recent package drawings. S8 Package 8-Lead Plastic Small Outline (Narrow .150 Inch) (Reference LTC DWG # 05-08-1610 Rev G) .189 – .197 (4.801 – 5.004) NOTE 3 .045 ±.005 .050 BSC 8 .245 MIN .160 ±.005 .010 – .020 × 45° (0.254 – 0.508) NOTE: 1. DIMENSIONS IN 5 .150 – .157 (3.810 – 3.988) NOTE 3 1 RECOMMENDED SOLDER PAD LAYOUT .053 – .069 (1.346 – 1.752) 0°– 8° TYP .016 – .050 (0.406 – 1.270) 6 .228 – .244 (5.791 – 6.197) .030 ±.005 TYP .008 – .010 (0.203 – 0.254) 7 .014 – .019 (0.355 – 0.483) TYP INCHES (MILLIMETERS) 2. DRAWING NOT TO SCALE 3. THESE DIMENSIONS DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS. MOLD FLASH OR PROTRUSIONS SHALL NOT EXCEED .006" (0.15mm) 4. PIN 1 CAN BE BEVEL EDGE OR A DIMPLE 2 3 4 .004 – .010 (0.101 – 0.254) .050 (1.270) BSC SO8 REV G 0212 1122fb 12 For more information www.linear.com/LT1122 LT1122 REVISION HISTORY (Revision history begins at Rev B) REV DATE DESCRIPTION B 02/14 Updated data sheet to current standards. New Order Information Table, Package Descriptions PAGE NUMBER 2, 10-12 1122fb Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights. For more information www.linear.com/LT1122 13 LT1122 TYPICAL APPLICATION Wide-Band, Filtered, Full Wave Rectifier 200k 1% 1µF 200k 1% 20k 1% VIN 20k 1% 100k 1% 1k 50k – EOUT DC LT1122 – LT1122 + + OUTPUT DC = RMS VALUE OF INPUT BANDWIDTH WITH 10VP-P INPUT = 2MHz 1122 TA06 RELATED PARTS PART NUMBER DESCRIPTION COMMENTS LT1022 High Speed Precision JFET Op Amp 23V/µs Min Slew Rate, 250µV VOS LT1055/LT1056 Precision High Speed JFET Op Amps 16V/µs Slew Rate, 150µV VOS LT1464 1MHz C-Load™ Stable JFET Op Amp Capacitive Loads Up to 10nF LTC 6244 50MHz Low Noise CMOS Op Amp 1pA IB, 100µV Max VOS, 1.5µVP-P, 0.1Hz to 10Hz Noise ® 1122fb 14 Linear Technology Corporation 1630 McCarthy Blvd., Milpitas, CA 95035-7417 For more information www.linear.com/LT1122 (408) 432-1900 ● FAX: (408) 434-0507 ● www.linear.com/LT1122 LT 0214 REV B • PRINTED IN USA  LINEAR TECHNOLOGY CORPORATION 1991
LT1122CS8#TR 价格&库存

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