MAX20307EWL+T

MAX20307 General Description The MAX20307 is a configurable driver IC for enhancement mode Gallium Nitride (eGaN) FETs, optimized for highfrequency operation. The device is designed to drive both the high-side and low-side FETs in a half-bridge topology. The floating high-side driver is capable of driving a high-side eGaN FET operating up to 60V. A synchronous bootstrap technique provides the high-side bias voltage and is internally clamped at 5.2V. This clamping prevents the gate voltage from exceeding the maximum rated gatesource voltage of eGaN FETs. The gate driver input signal is 3.3V TTL logic compatible, and can withstand input voltages up to 6V regardless of the VCC voltage. Additionally, the MAX20307 features adaptive dead time control. High-frequency H-bridge drive capability and adaptive dead time control make the MAX20307 ideal for highefficiency buck applications. TTL logic compatibility allows the INH drive input to operate directly from the outputs of most PWM controllers allowing for flexible design. The device covers wireless power (transmitting) levels from a few Watts to over 20 Watts making it well suited for wireless charging of various portable devices. High frequency optimization enables the use of wireless charging standards such as A4WP (6.78MHz) and ISM band (13.56MHz) wireless charging. The MAX20307 is available in a space-saving, 15-bump, 1.2 x 2.0mm wafer-level package (WLP) and operate over the -40°C to +85°C extended temperature range. Applications ●● Switching Power Supply Topology Support • Half and Full-Bridge converters • Current Fed Push-Pull converters • Synchronous Buck converters ●● A4WP Wireless Charging ●● Medical Device Wireless Charging in ISM Band ●● WPC and PMAT 19-100281; Rev 0; 3/18 High-Frequency Optimized Configurable eGaN Driver Benefits and Features ●● Flexible/Configurable Gate Drive • Single Control Input • 1A/5A Gate Source/Sink Current ●● High-Efficiency SMPS Design • Low Loss Gate Drive: Optimized Bootstrap Circuit • Automatic Dead Time Control Optimized for HalfBridge Converters • Programmable Maximum Dead Time • 0ns–9ns GPIO Controlled • Fast Propagation Delay (22ns) ●● Safe Gate Drive • High-Side Floating Node Voltage up to 60V • Gate Supply Voltage UVLO ●● Space-Saving Design • 0.4mm pitch 1.2mm x 2.0mm WLP Ordering Information appears at end of data sheet. MAX20307 High-Frequency Optimized Configurable eGaN Driver Absolute Maximum Ratings (Voltages reference to GND unless otherwise noted) VCC...........................................................................-0.3V to +6V VIN..........................................................................-0.3V to +66V LO.................................................................-0.3V to VCC + 0.3V HO......................................................VHS – 0.3V to VHB + 0.3V HB..........................................................................-0.3V to +66V HB to VCC..............................................................-0.3V to +60V HS..........................................................................-0.3V to +60V INL, INH, LDTY0, LDTY1, DTP0, DTP1..................-0.3V to +6V Continuous Power Dissipation (TA = +70°C): WLP (derate 16.4mW/°C above +70°C.)....................1312mW Operating Temperature Range............................ -40°C to +85°C Junction Temperature........................................ -40°C to +150°C Storage Temperature Range............................. -40°C to +150°C Soldering Temperature (reflow)........................................+260°C Package Thermal Characteristics (Note 1) WLP Junction-to-Ambient Thermal Resistance (θJA)...........52°C/W Note 1: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-layer board. For detailed information on package thermal considerations, refer to www.maximintegrated.com/thermal-tutorial. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Electrical Characteristics (VCC = 4.5 to 5.5V, TA = -40°C to +85°C unless otherwise noted. Typical values are at VCC = 5V, TA = +25°C.) (Note 2) PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS 5.5 V 13 mA VCC Supply Voltage Range VCC 4.5 VCC Quiescent Current IQ INH = 0V 6 VCC Operating Current ICC f = 13.56MHz, CL = 47pF 35 VCC Undervoltage Lockout (UVLO) VCC_UVLO VCC Rising VCC_ UVLOHYS VCC Falling 0.1 V LO Output Low LOOUT_LOW ILO = 100mA