OP262TRZ-EP

15 MHz, Rail-to-Rail, Dual Operational Amplifier OP262-EP Supports defense and aerospace applications (AQEC standard) Military temperature range (−55°C to +125°C) Controlled manufacturing baseline One assembly/test site One fabrication site Enhanced product change notification Qualification data available on request Wide bandwidth: 15 MHz Low offset voltage: 325 μV maximum Low noise: 9.5 nV/√Hz @ 1 kHz Single-supply operation: 2.7 V to 12 V Low supply current: 850 μA maximum Rail-to-rail output swing Low TCVOS: 1 μV/°C typical High slew rate: 13 V/μs No phase inversion Unity-gain stable PIN CONFIGURATION OUT A 1 8 V+ –IN A 2 OP262-EP 7 OUT B +IN A 3 TOP VIEW (Not to Scale) 6 –IN B 5 +IN B V– 4 09256-003 FEATURES Figure 1. 8-Lead Narrow-Body SOIC (R Suffix) GENERAL DESCRIPTION The OP262-EP is a low power, precision op amp that features a rail-to-rail output and a 15 MHz bandwidth. With its low offset voltage of 45 μV (typical) and low noise, it is well suited for precision filter and control applications. This product operates from a single supply as low as 2.7 V or from dual supplies up to ±6 V. The OP262-EP is specified over the military temperature range (−55°C to +125°C) and is available in an 8-lead SOIC_N package. Additional applications information is available in the OP162/OP262/OP462 data sheet. APPLICATIONS Portable instrumentation Sampling ADC amplifiers Precision filters Rev. 0 Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781.329.4700 www.analog.com Fax: 781.461.3113 ©2010 Analog Devices, Inc. All rights reserved. OP262-EP TABLE OF CONTENTS Features .............................................................................................. 1 Absolute Maximum Ratings ............................................................6 Applications ....................................................................................... 1 ESD Caution...................................................................................6 Pin Configuration ............................................................................. 1 Typical Performance Characteristics ..............................................7 General Description ......................................................................... 1 Outline Dimensions ....................................................................... 11 Revision History ............................................................................... 2 Ordering Guide .......................................................................... 11 Specifications..................................................................................... 3 Electrical Characteristics ............................................................. 3 REVISION HISTORY 7/10—Revision 0: Initial Version Rev. 0 | Page 2 of 12 OP262-EP SPECIFICATIONS ELECTRICAL CHARACTERISTICS VS = 5.0 V, VCM = 0 V, TA = 25°C, unless otherwise noted. Table 1. Parameter INPUT CHARACTERISTICS Offset Voltage Symbol Test Conditions/Comments Min VOS Typ Max Unit 45 325 1 600 650 ±25 ±40 4 1 250 μV mV nA nA nA nA V dB V/mV V/mV V/mV μV/°C pA/°C 4.99 4.94 14 65 ±80 ±30 V V mV mV mA mA −55°C ≤ TA ≤ +125°C Input Bias Current IB 360 −55°C ≤ TA ≤ +125°C Input Offset Current IOS ±2.5 −55°C ≤ TA ≤ +125°C Input Voltage Range Common-Mode Rejection Large Signal Voltage Gain Offset Voltage Drift 1 Bias Current Drift OUTPUT CHARACTERISTICS Output Voltage Swing High VCM CMRR AVO VOH VOL Short-Circuit Current Maximum Output Current POWER SUPPLY Power Supply Rejection Ratio ISC IOUT DYNAMIC PERFORMANCE Slew Rate Settling Time Gain Bandwidth Product Phase Margin NOISE PERFORMANCE Voltage Noise Voltage Noise Density Current Noise Density 1 0 70 65 40 ΔVOS/ΔT ΔIB/ΔT Output Voltage Swing Low Supply Current/Amplifier 0 V ≤ VCM ≤ 4.0 V, −55°C ≤ TA ≤ +125°C RL = 2 kΩ, 0.5 ≤ VOUT ≤ 4.5 V RL = 10 kΩ, 0.5 ≤ VOUT ≤ 4.5 V RL = 10 kΩ, −55°C ≤ TA ≤ +125°C PSRR ISY IL = 250 μA, −55°C ≤ TA ≤ +125°C IL = 5 mA IL = 250 μA, −55°C ≤TA ≤ +125°C IL = 5 mA Short to ground VS = 2.7 V to 7 V −55°C ≤ TA ≤ +125°C VOUT = 2.5 V −55°C ≤ TA ≤ +125°C 4.95 4.85 110 30 88 50 150 120 90 500 700 850 dB dB μA μA SR tS GBP φm 1 V < VOUT < 4 V, RL = 10 kΩ To 0.1%, AV = −1, VO = 2 V step 10 540 15 61 V/μs ns MHz Degrees en p-p en in 0.1 Hz to 10 Hz f = 1 kHz f = 1 kHz 0.5 9.5 0.4 μV p-p nV/√Hz pA/√Hz Offset voltage drift is the average of the −55°C to +25°C delta and the +25°C to +125°C delta. Rev. 0 | Page 3 of 12 OP262-EP VS = 3.0 V, VCM = 0 V, TA = 25°C, unless otherwise noted. Table 2. Parameter INPUT CHARACTERISTICS Offset Voltage Symbol Test Conditions/Comments Min VOS Typ Max Unit 50 325 1 600 ±25 2 110 20 30 μV mV nA nA V dB V/mV V/mV 2.99 2.93 14 66 50 150 V V mV mV 650 850 dB dB μA μA −55°C ≤ TA ≤ +125°C Input Bias Current Input Offset Current Input Voltage Range Common-Mode Rejection Large Signal Voltage Gain IB IOS VCM CMRR AVO OUTPUT CHARACTERISTICS Output Voltage Swing High VOH Output Voltage Swing Low VOL POWER SUPPLY Power Supply Rejection Ratio Supply Current/Amplifier DYNAMIC PERFORMANCE Slew Rate Settling Time Gain Bandwidth Product Phase Margin NOISE PERFORMANCE Voltage Noise Voltage Noise Density Current Noise Density PSRR ISY 360 ±2.5 0 V ≤ VCM ≤ 2.0 V, −55°C ≤ TA ≤ +125°C RL = 2 kΩ, 0.5 V ≤ VOUT ≤ 2.5 V RL = 10 kΩ, 0.5 V ≤ VOUT ≤ 2.5 V IL = 250 μA IL= 5 mA IL = 250 μA IL= 5 mA VS = 2.7 V to 7 V −55°C ≤ TA ≤ +125°C VOUT = 1.5 V −55°C ≤ TA ≤ +125°C 0 70 20 2.95 2.85 110 60 500 SR tS GBP φm RL = 10 kΩ To 0.1%, AV = −1, VO = 2 V step 10 575 15 59 V/μs ns MHz Degrees en p-p en in 0.1 Hz to 10 Hz f = 1 kHz f = 1 kHz 0.5 9.5 0.4 μV p-p nV/√Hz pA/√Hz Rev. 0 | Page 4 of 12 OP262-EP VS = ±5.0 V, VCM = 0 V, TA = 25°C, unless otherwise noted. Table 3. Parameter INPUT CHARACTERISTICS Offset Voltage Symbol Test Conditions/Comments Min VOS Typ Max Unit 25 325 1 500 650 ±25 ±40 +4 1 250 μV mV nA nA nA nA V dB V/mV V/mV V/mV μV μV/°C pA/°C 4.99 4.94 −4.99 −4.94 ±80 ±30 V V V V mA mA −55°C ≤ TA ≤ +125°C Input Bias Current IB 260 −55°C ≤ TA ≤ +125°C Input Offset Current IOS ±2.5 −55°C ≤ TA ≤ +125°C Input Voltage Range Common-Mode Rejection Large Signal Voltage Gain Long-Term Offset Voltage 1 Offset Voltage Drift 2 Bias Current Drift OUTPUT CHARACTERISTICS Output Voltage Swing High VCM CMRR AVO VOH VOL Short-Circuit Current Maximum Output Current ISC IOUT Supply Current/Amplifier Supply Voltage Range −5 70 75 25 VOS ΔVOS/ΔT ΔIB/ΔT Output Voltage Swing Low POWER SUPPLY Power Supply Rejection Ratio −4.9 V ≤ VCM ≤ +4.0 V, −55°C ≤ TA ≤ +125°C RL = 2 kΩ, –4.5 V ≤ VOUT ≤ +4.5 V RL = 10 kΩ, –4.5 V ≤ VOUT ≤ +4.5 V −55°C ≤ TA ≤ +125°C PSRR ISY 110 35 120 600 IL = 250 μA, −55°C ≤ TA ≤ +125°C IL= 5 mA IL = 250 μA, −55°C ≤ TA ≤ +125°C IL= 5 mA Short to ground VS = ±1.35 V to ±6 V −55°C ≤ TA ≤ +125°C VOUT = 0 V −55°C ≤ TA ≤ +125°C VOUT = 0 V −55°C ≤ TA ≤ +125°C VS 4.95 4.85 −4.95 −4.85 110 60 650 550 3.0 (±1.5) 800 1.15 775 1 12 (±6) dB dB μA mA μA mA V DYNAMIC PERFORMANCE Slew Rate Settling Time Gain Bandwidth Product Phase Margin SR tS GBP φm −4 V < VOUT < +4 V, RL = 10 kΩ To 0.1%, AV = −1, VO = 2 V step 13 475 15 64 V/μs ns MHz Degrees NOISE PERFORMANCE Voltage Noise Voltage Noise Density Current Noise Density en p-p en in 0.1 Hz to 10 Hz f = 1 kHz f = 1 kHz 0.5 9.5 0.4 μV p-p nV/√Hz pA/√Hz 1 2 Long-term offset voltage is guaranteed by a 1000 hour life test performed on three independent lots at 125°C, with an LTPD of 1.3. Offset voltage drift is the average of the −55°C to +25°C delta and the +25°C to +125°C delta. Rev. 0 | Page 5 of 12 OP262-EP ABSOLUTE MAXIMUM RATINGS Table 4. Parameter Supply Voltage Input Voltage 1 Differential Input Voltage 2 Internal Power Dissipation SOIC (S) Output Short-Circuit Duration Storage Temperature Range Operating Temperature Range Junction Temperature Range Lead Temperature Range, (Soldering, 10 sec) 1 2 Min ±6 V ±6 V ±0.6 V Observe Derating Curves Observe Derating Curves −65°C to +150°C −55°C to +125°C −65°C to +150°C 300°C Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Table 5. Package Type 8-Lead SOIC (R) 1 For supply voltages greater than 6 V, the input voltage is limited to less than or equal to the supply voltage. For differential input voltages greater than 0.6 V, the input current should be limited to less than 5 mA to prevent degradation or destruction of the input devices. θJA1 157 θJC 56 Unit °C/W θJA is specified for the worst-case conditions, that is, θJA is specified for a device soldered in circuit board for SOIC package. ESD CAUTION Rev. 0 | Page 6 of 12 OP262-EP TYPICAL PERFORMANCE CHARACTERISTICS 250 125 150 100 50 –140 –80 –20 40 100 INPUT OFFSET VOLTAGE (µV) 160 75 50 25 0 –75 09256-007 Figure 2. Input Offset Voltage Distribution 0 25 50 75 TEMPERATURE (°C) 100 150 VS = 5V VS = 5V TA = 25°C COUNT = 360 OP AMPS INPUT BIAS CURRENT (nA) –100 60 40 –200 –300 –400 20 0.5 0.7 0.9 1.1 1.3 INPUT OFFSET DRIFT, TCVOS (µV,°C) –500 –75 09256-008 0.3 1.5 –50 –25 0 25 50 75 TEMPERATURE (°C) 100 125 150 Figure 6. Input Bias Current vs. Temperature Figure 3. Input Offset Voltage Drift (TCVOS) 15 420 VS = 5V 340 260 100 0 0.5 1.0 1.5 2.0 2.5 3.0 COMMON-MODE VOLTAGE (V) 3.5 4.0 09256-009 180 10 5 0 –75 –50 –25 0 25 50 75 TEMPERATURE (°C) 100 125 Figure 7. Input Offset Current vs. Temperature Figure 4. Input Bias Current vs. Common-Mode Voltage Rev. 0 | Page 7 of 12 150 09256-012 INPUT OFFSET CURRENT (nA) VS = 5V INPUT BIAS CURRENT (nA) 125 0 80 QUANTITY (Amplifiers) –25 Figure 5. Input Offset Voltage vs. Temperature 100 0 0.2 –50 09256-011 0 –200 100 09256-010 INPUT OFFSET VOLTAGE (µV) 200 QUANTITY (Amplifiers) VS = 5V VS = 5V TA = 25°C COUNT = 720 OP AMPS OP262-EP 5.12 100 IOUT = 250µA 5.00 4.94 IOUT = 5mA –50 –25 0 25 50 75 TEMPERATURE (°C) 100 125 150 VS = 3V 40 20 0 1 2 3 4 5 LOAD CURRENT (mA) 6 7 Figure 11. Output Low Voltage to Supply Rail vs. Load Current 0.10 1.0 VS = 5V 0.9 0.08 0.8 IOUT = 5mA SUPPLY CURRENT (mA) OUTPUT LOW VOLTAGE (mV) VS = 10V 0 Figure 8. Output High Voltage vs. Temperature 0.06 0.04 0.02 VS = 10V 0.7 VS = 5V 0.6 VS = 3V 0.5 0.4 0.3 0.2 0.1 IOUT = 250µA –50 –25 0 25 50 75 TEMPERATURE (°C) 100 125 150 0 –75 09256-014 0 –75 60 Figure 9. Output Low Voltage vs. Temperature –50 –25 0 25 50 75 TEMPERATURE (°C) 100 125 150 09256-017 4.82 –75 09256-013 4.88 80 09256-016 5.06 OUTPUT LOW VOLTAGE (mV) OUTPUT HIGH VOLTAGE (V) VS = 5V Figure 12. Supply Current/Amplifier vs. Temperature 100 0.7 RL = 10kΩ TA = 25°C SUPPLY CURRENT (mA) VS = 5V 60 40 RL = 2kΩ 0.6 0.5 20 0.4 0 –75 –50 –25 0 25 50 75 TEMPERATURE (°C) 100 125 150 0 2 4 6 8 SUPPLY VOLTAGE (V) 10 Figure 13. Supply Current/Amplifier vs. Supply Voltage Figure 10. Open-Loop Gain vs. Temperature Rev. 0 | Page 8 of 12 12 09256-018 RL = 600kΩ 09256-015 OPEN-LOOP GAIN (V/mV) 80 OP262-EP 4 50 3 45 90 PHASE 10 135 0 180 –10 225 –20 270 0.01% 1 0 –1 –2 0.1% 1M 10M FREQUENCY (Hz) –4 09256-019 100M 0 Figure 14. Open-Loop Gain and Phase vs. Frequency (No Load) 60 VS = 5V TA = 25°C RL = 830Ω CL = 5pF OVERSHOOT (%) CLOSED-LOOP GAIN (dB) 0 –20 1000 40 +OS 30 –OS 20 10 1M FREQUENCY (Hz) 10M 100M 0 10 09256-020 100k Figure 15. Closed-Loop Gain vs. Frequency 100 CAPACITANCE (pF) 1000 Figure 18. Small-Signal Overshoot vs. Capacitance 5 70 VS = 5V TA = 25°C 60 NOISE DENSITY (nV/ Hz) 4 3 2 1 0 10k VS = 5V AVCL = 1 RL = 10kΩ CL = 15pF TA = 25°C DISTORTION