2729-170

2729-170R2 2729-170 170 Watts, 38 Volts, 100µs, 10% Radar 2700-2900 MHz GENERAL DESCRIPTION The 2729-170 is an internally matched, COMMON BASE bipolar transistor capable of providing 170 Watts of pulsed RF output power at 100µs pulse width, 10% duty factor across the 2700 to 2900 MHz band. The transistor prematch and test fixture has been optimized through the use of Pulsed Automated Load Pull. This hermetically solder-sealed transistor is specifically designed for S-band radar applications. It utilizes gold metallization and emitter ballasting to provide high reliability and supreme ruggedness. CASE OUTLINE 55KS-1 Common Base ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation Device Dissipation @ 25 °C1 Maximum Voltage and Current Collector to Base Voltage (BVces) Emitter to Base Voltage (BVebo) Collector Current (Ic) Maximum Temperatures 570 W 65 V 3.0 V 17 A Storage Temperature -65 to +200 °C Operating Junction Temperature +200 °C ELECTRICAL CHARACTERISTICS @ 25° C SYMBOL Pout Pin Pg ηc V SWR CHARACTERISTICS Power Output Power Input Power Gain Collector Efficiency Load Mismatch Tolerance1 TEST CONDITIONS F=2700-2900 MHz Vcc = 38 Volts Pulse Width = 100 µs Duty Factor = 10% F = 2900 MHz, Po = 170 W MIN 170 25.7 8.2 52 8.6 60 2:1 TYP MAX UNITS W W dB % FUNCTIONAL CHARACTERISTICS @ 25° C B Vebo Iebo B Vces Ices h FE θjc 1 Emitter to Base Breakdown Emitter to Base Leakage Collector to Emitter Breakdown Collector to Emitter Leakage DC – Current Gain Thermal Resistance 1. At rated output power and pulse conditions Ie = 30 mA Veb = 1.5 V Ic = 120 mA Vce = 36 V Vce = 5V, Ic = 600 mA 3.0 2 56 18 65 7 50 0.30 V mA V mA °C/W NOTE: Issue April 2005 APT-RF RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION PLEASE CHECK OUR WEB SITE AT WWW.ADVANCEDPOWER.COM OR CONTACT OUR FACTORY DIRECTLY. 2729-170R2 2729-170 Vcc = 38 Volts, Pulse Width = 100 µs, Duty = 10 % G2754-2, Product is in characterization, additional curves will be inserted at the conclusion. Pout vs. Pin Efficiency vs Power Out 70.0 9 8 Power Gain vs Power Out 200.0 180.0 160.0 140.0 Efficiency (%) 60.0 7 50.0 6 Gain (dB) Pout (W) 120.0 100.0 80.0 60.0 2.7GHz 2.8GHz 2.9GHz 40.0 2.7GHz 2.8GHz 5 4 3 2.7GHz 2.8GHz 2.9GHz 30.0 2.9GHz 20.0 2 1 0 0.0 40.0 20.0 0.0 0.0 10.0 Pin (W) 20.0 30.0 10.0 0.0 0.0 50.0 100.0 150.0 200.0 Power Output (W) 50.0 100.0 Pout (W) 150.0 200.0 Input and Load Impedance Input Impedance vs Frequency 15 Zin = Rin + jXin 10 5 0 -5 2.7 2.75 2.8 2.85 2.9 Rin jXin Zload = Rl + jXl Load Impedance vs Frequency 4 2 0 -2 -4 -6 Frequency - GHz 2.7 2.75 2.8 2.85 2.9 Rl jXl Frequency - GHz Note: Zin is looking into the transistor input, Zl is looking into the Output Circuit. APT-RF RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION PLEASE CHECK OUR WEB SITE AT WWW.ADVANCEDPOWER.COM OR CONTACT OUR FACTORY DIRECTLY. 2729-170R2 2729-170 Broadband Test Circuit – APT-RF RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION PLEASE CHECK OUR WEB SITE AT WWW.ADVANCEDPOWER.COM OR CONTACT OUR FACTORY DIRECTLY. 2729-170R2 2729-170 APT-RF RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION PLEASE CHECK OUR WEB SITE AT WWW.ADVANCEDPOWER.COM OR CONTACT OUR FACTORY DIRECTLY.