APT1101RBFLL APT1101RSFLL
1100V 13A 1.000Ω
D3PAK
TO-247
POWER MOS 7
®
R
FREDFET
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg • Increased Power Dissipation • Easier To Drive • TO-247 or Surface Mount D3PAK Package • FAST RECOVERY BODY DIODE
D G S
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current
1
All Ratings: TC = 25°C unless otherwise specified.
APT1101RBFLL_SFLL UNIT Volts Amps
1100 13 52 ±30 ±40 403 3.23 -55 to 150 300 13 30
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/°C °C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
1300
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) Drain-Source On-State Resistance
2
MIN
TYP
MAX
UNIT Volts
1100 1.00 100 500 ±100 3 5
(VGS = 10V, 6.5A)
Ohms µA nA Volts
11-2003 050-7187 Rev A
Zero Gate Voltage Drain Current (VDS = 1100V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 880V, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss C rss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Symbol IS ISM VSD
dv/ dt
APT1101RBFLL_SFLL
Test Conditions
VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 550V ID = 13A @ 25°C RESISTIVE SWITCHING VGS = 15V VDD = 550V ID = 13A @ 25°C 6 RG = 1.6Ω INDUCTIVE SWITCHING @ 25°C VDD = 733V, VGS = 15V ID = 13A, RG = 5Ω 6 INDUCTIVE SWITCHING @ 125°C VDD = 733V, VGS = 15V ID = 13A, RG = 5Ω
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
MIN
TYP
MAX
UNIT pF
2345 388 65 90 12 61 12 7 32 14 364 105 748 139
MIN TYP MAX
Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage Peak Diode Recovery
1 2 dt
nC
ns
µJ
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
UNIT Amps Volts V/ns ns
13 52 1.3 18
Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C MIN
(Body Diode) (VGS = 0V, IS = -13A)
5
d v/
t rr
Reverse Recovery Time (IS = -13A, di/dt = 100A/µs) Reverse Recovery Charge (IS = -13A, di/dt = 100A/µs) Peak Recovery Current (IS = -13A, di/dt = 100A/µs) Characteristic Junction to Case Junction to Ambient
210 710 1.0 3.6 10 14
TYP MAX
Q rr IRRM
µC
Amps
THERMAL CHARACTERISTICS
Symbol RθJC RθJA UNIT °C/W
0.31 40
4 Starting Tj = +25°C, L = 15.38mH, RG = 25Ω, Peak IL = 13A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -13A di/dt ≤ 700A/µs VR ≤ 1100 TJ ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20.
1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471
0.35
Z JC, THERMAL IMPEDANCE (°C/W) θ
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.30 0.25
0.9
0.7 0.20 0.5 0.15 0.10 0.05 0 0.3 Note:
PDM t1 t2
050-7187 Rev A
11-2003
0.1 0.05 10-5 10-4
SINGLE PULSE
Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
25
ID, DRAIN CURRENT (AMPERES)
Junction temp. (°C) RC MODEL
APT1101RBFLL_SFLL
VGS =15 & 10V 20 7V 6.5V
0.0258
0.00295F
15
6V
Power (watts)
0.107
0.0114F
10 5.5V 5 5V 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 0
0.177 Case temperature. (°C)
0.174F
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 30
ID, DRAIN CURRENT (AMPERES) RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
VDS> ID (ON) x RDS (ON)MAX. 250µSEC. PULSE TEST @
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