600V 20A 0.220Ω APT20N60BCF APT20N60SCF APT20N60BCFG* APT20N60SCFG*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
C OLMOS O
Power Semiconductors
Super Junction FREDFET
TO -2 47
D3PAK
• Ultra Low RDS(ON) • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Extreme dv/dt Rated
• Intrinsic Fast-Recovery Body Diode • Extreme Low Reverse Recovery Charge • Ideal For ZVS Applications • Popular TO-247 or Surface Mount D3 Package
G S D
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS PD TJ,TSTG TL dv/ dt IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Continuous Drain Current @ TC = 100°C Pulsed Drain Current
1
All Ratings: TC = 25°C unless otherwise specified.
APT20N60BCF(G)_SCF(G)
UNIT Volts
600 20 13 60 ±30 208 1.67 -55 to 150 260 80 20
7 4
Amps
Gate-Source Voltage Continuous Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Drain-Source Voltage slope (VDS = 480V, ID = 20A, TJ = 125°C) Avalanche Current
7
Volts Watts W/°C °C V/ns Amps mJ
Repetitive Avalanche Energy
1 690
Single Pulse Avalanche Energy
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) Drain-Source On-State Resistance
2
MIN 600
TYP
MAX
UNIT Volts
(VGS = 10V, ID = 13A)
0.220 2.1 1700 ±100 3 4 5
Ohms µA nA Volts
5-2005 050-7235 Rev A
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V, TC = 150°C) Gate-Source Leakage Current (VGS = ±20V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1mA)
APT Website - http://www.advancedpower.com
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
"COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG."
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss Crss Qg Qgd td(on) td(off) tf Eon Eoff Eon Eoff Symbol IS VSD
dv
APT20N60BCF(G)_SCF(G)
Test Conditions
VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 300V ID = 20A @ 25°C RESISTIVE SWITCHING VGS = 15V VDD = 380V ID = 20A @ 25°C RG = 3.6Ω
6
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
MIN
TYP
MAX
UNIT pF
2520 670 40 95 18 55 12 15 60 6.4 180 60 315 80
MIN TYP MAX
Qgs
Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage Peak Diode Recovery
dv
1 2
nC
tr
ns
INDUCTIVE SWITCHING @ 25°C VDD = 400V, VGS = 15V ID = 20A, RG = 5Ω INDUCTIVE SWITCHING @ 125°C VDD = 400V, VGS = 15V ID = 20A, RG = 5Ω
6
µJ
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
UNIT Amps Volts V/ns ns µC Amps
20 60 1.2 40
Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C MIN 180
ISM
(Body Diode) (VGS = 0V, IS = -20A)
5
/dt
/dt
t rr Q rr IRRM
Reverse Recovery Time (IS = -20A, di/dt = 100A/µs) Reverse Recovery Charge (IS = -20A, /dt = 100A/µs) Peak Recovery Current (IS = -20A, /dt = 100A/µs) Characteristic Junction to Case Junction to Ambient
di di
260 1.4 2.5 15 18
TYP MAX
THERMAL CHARACTERISTICS
Symbol RθJC RθJA UNIT °C/W
0.60 62
1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein. 0.70 Z JC, THERMAL IMPEDANCE (°C/W) θ 0.60 0.50 0.40 0.30 0.20 0.10 0 0.7 0.5 0.3
4 Starting Tj = +25°C, L = 13.80mH, RG = 25Ω, Peak IL = 10A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -ID20A di/dt ≤ 700A/µs VR ≤ 480V TJ ≤125°C 6 Eon includes diode reverse recovery. See figures 18, 20. 7 Repetitive avalanche causes additional power losses that can be calculated as PAV = EAR*f
0.9
5-2005
Note:
PDM
050-7235 Rev A
t1 t2
0.1 0.05 10-5 10-4
SINGLE PULSE
Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC
t
10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
Typical Performance Curves
ID, DRAIN CURRENT (AMPERES)
60 50 40
APT20N60BCF(G)_SCF(G)
VGS = 15 &10 V 8V
RC MODEL Junction temp. (°C) 0.322 Power (watts) 0.276 Case temperature. (°C) 0.0728F 0.00498F
7.5V 30 7V 20 6.5V 10 0 6V 5.5V
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
80
0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 1.40 1.30 1.20 1.10 1.00 0.90 0.80
VGS=20V
NORMALIZED TO VGS = 10V @ 13A
VDS> ID(ON) x RDS(ON) MAX. 250µSEC. PULSE TEST @
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