APT47N60SCF

600V 46A 0.083Ω APT47N60BCF APT47N60SCF APT47N60BCFG* APT47N60SCFG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. C OLMOS O Power Semiconductors Super Junction FREDFET (B) TO -2 47 D3PAK • Ultra Low RDS(ON) • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Extreme dv/dt Rated • Intrinsic Fast-Recovery Body Diode • Extreme Low Reverse Recovery Charge • Ideal For ZVS Applications • Popular TO-247 or Surface Mount D3 Package (S) D G S MAXIMUM RATINGS Symbol VDSS ID IDM VGS PD TJ,TSTG TL dv/ dt IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Continuous Drain Current @ TC = 100°C Pulsed Drain Current 1 All Ratings: TC = 25°C unless otherwise specified. APT47N60B_SCF(G) 600 46 29 115 ±30 417 1.67 -55 to 150 260 80 20 2 3 UNIT Volts Amps Gate-Source Voltage Continuous Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Drain-Source Voltage slope (VDS = 480V, ID = 46A, TJ = 125°C) Avalanche Current 2 Volts Watts W/°C °C V/ns Amps mJ Repetitive Avalanche Energy 1 1800 Single Pulse Avalanche Energy STATIC ELECTRICAL CHARACTERISTICS Symbol B(VR)DS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) Drain-Source On-State Resistance 4 MIN 600 TYP MAX UNIT Volts (VGS = 10V, ID = 29A) 0.083 6 5000 ±100 3 4 5 Ohms µA nA Volts 12-2005 050-7237 Rev A Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V, TC = 150°C) Gate-Source Leakage Current (VGS = ±20V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.9mA) APT Website - http://www.advancedpower.com CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. "COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG." DYNAMIC CHARACTERISTICS Symbol Ciss Coss Crss Qg Qgd td(on) td(off) tf Eon Eoff Eon Eoff Symbol IS VSD dv APT47N60BCF_SCF(G) Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 300V ID = 46A @ 25°C RESISTIVE SWITCHING VGS = 15V VDD = 380V ID = 46A @ 25°C RG = 3.6Ω 6 Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 5 MIN TYP MAX UNIT pF 7290 1735 41 255 43 135 30 30 100 15 885 590 1270 725 MIN TYP MAX Qgs Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage Peak Diode Recovery dv 1 4 nC tr ns INDUCTIVE SWITCHING @ 25°C VDD = 400V, VGS = 15V ID = 46A, RG = 4.3Ω INDUCTIVE SWITCHING @ 125°C VDD = 400V, VGS = 15V ID = 46A, RG = 4.3Ω 6 µJ SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS UNIT Amps Volts V/ns ns µC Amps 46 115 1.2 40 Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C MIN 210 ISM (Body Diode) (VGS = 0V, IS = -46A) 7 /dt /dt t rr Q rr IRRM Reverse Recovery Time (IS = -46A, di/dt = 100A/µs) Reverse Recovery Charge (IS = -46A, /dt = 100A/µs) Peak Recovery Current (IS = -46A, /dt = 100A/µs) Characteristic Junction to Case Junction to Ambient 4 5 6 7 di di 350 2.0 5.4 18 28 TYP MAX THERMAL CHARACTERISTICS Symbol RθJC RθJA UNIT °C/W 0.30 62 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% See MIL-STD-750 Method 3471 Eon includes diode reverse recovery. See figures 18, 20. Maximum 125°C diode commutation speed = di/dt 600A/µs 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Repetitive avalanche causes additional power losses that can be calculated as PAV = EAR*f 3 Starting Tj = +25°C, L = 36.0mH, RG = 25Ω, Peak IL = 10A APT Reserves the right to change, without notice, the specifications and information contained herein. 0.35 Z JC, THERMAL IMPEDANCE (°C/W) θ 0.30 D = 0.9 0.25 0.20 0.15 0.10 0.05 0 0.7 12-2005 0.5 0.3 Note: PDM 050-7237 Rev A t1 t2 0.1 0.05 10-5 10-4 SINGLE PULSE Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC t 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION Typical Performance Curves ID, DRAIN CURRENT (AMPERES) 60 50 40 30 20 10 0 APT47N60BCF_SCF(G) 15, 10 & 7.5V 7V 6.5V RC MODEL Junction temp. (°C) 0.143 Power (watts) 0.157 Case temperature. (°C) 0.133 0.00841 6V 5.5V 5V FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 80 0 2 4 6 8 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 1.40 1.30 1.20 VGS=10V NORMALIZED TO VGS = 10V @ 23A VDS> ID(ON) x RDS(ON) MAX. 250µSEC. PULSE TEST @