APT5010B2FLL

APT5010B2FLL APT5010LFLL POWER MOS 7 ® 500V 46A 0.100Ω B2FLL R FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. • Lower Input Capacitance • Increased Power Dissipation • Lower Miller Capacitance • Easier To Drive • Lower Gate Charge, Qg • Popular T-MAX™ or TO-264 Package • FAST RECOVERY BODY DIODE MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 T-MAX™ TO-264 LFLL D G S All Ratings: TC = 25°C unless otherwise specified. APT5010B2FLL_LFLL UNIT Volts Amps 500 46 184 ±30 ±40 520 4.0 -55 to 150 300 50 50 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 Volts Watts W/°C °C Amps mJ (Repetitive and Non-Repetitive) 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy 1600 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) Drain-Source On-State Resistance 2 MIN TYP MAX UNIT Volts 500 0.100 250 1000 ±100 3 5 (VGS = 10V, ID = 23A) Ohms µA nA Volts 9-2004 050-7028 Rev D Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com DYNAMIC CHARACTERISTICS Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Symbol IS ISM VSD dv/ dt APT5010B2FLL_LFLL Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 250V ID = 46A @ 25°C RESISTIVE SWITCHING VGS = 15V VDD = 250V ID = 46A@ 25°C 6 INDUCTIVE SWITCHING @ 25°C VDD = 333V, VGS = 15V INDUCTIVE SWITCHING @ 125°C VDD = 333V VGS = 15V ID = 46A, RG = 5Ω ID = 46A, RG = 5Ω RG = 0.6Ω Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 MIN TYP MAX UNIT pF 4360 895 60 95 24 50 11 15 25 3 545 510 845 595 MIN TYP MAX Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage Peak Diode Recovery 1 2 dt 6 nC ns µJ SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS UNIT Amps Volts V/ns ns µC Amps 46 184 1.3 15 Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C MIN (Body Diode) (VGS = 0V, IS = -46A) 5 d v/ t rr Q rr IRRM Reverse Recovery Time (IS = -46A, di/dt = 100A/µs) Reverse Recovery Charge (IS = -46A, di/dt = 100A/µs) Peak Recovery Current (IS = -46A, di/dt = 100A/µs) Characteristic Junction to Case Junction to Ambient 280 600 2.28 6.41 15.7 23.6 TYP MAX THERMAL CHARACTERISTICS Symbol RθJC RθJA UNIT °C/W 0.25 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 0.30 Z JC, THERMAL IMPEDANCE (°C/W) θ 4 Starting Tj = +25°C, L = 1.51mH, RG = 25Ω, Peak IL = 46A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -ID46A di/dt ≤ 700A/µs VR ≤ 500V TJ ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and inforation contained herein. 0.25 0.20 0.9 0.7 0.5 0.3 0.1 0.05 Note: PDM t1 t2 0.15 9-2004 0.10 050-7028 Rev D 0.05 0 SINGLE PULSE Peak TJ = PDM x ZθJC + TC Duty Factor D = t1/t2 10-5 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 10-4 1.0 Typical Performance Curves Junction temp. (°C) RC MODEL 120 100 80 60 40 APT5010B2FLL_LFLL 15 &10V 8V 7.5V 7V 0.0131 0.00266F 0.0789 Power (watts) 0.0811 0.00584F ID, DRAIN CURRENT (AMPERES) 6.5V 0.0796F 6V 20 0 5.5V 0.230 Case temperature. (°C) 0.460F FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 90 ID, DRAIN CURRENT (AMPERES) VDS> ID (ON) x RDS (ON)MAX. 250µSEC. PULSE TEST @