APT5014BFLL

APT5014BFLL APT5014SFLL 500V 35A 0.140Ω POWER MOS 7 ® R FREDFET D3PAK TO-247 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg • Increased Power Dissipation • Easier To Drive • TO-247 or Surface Mount D3PAK Package • FAST RECOVERY BODY DIODE D G S MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 All Ratings: TC = 25°C unless otherwise specified. APT5014BFLL_SFLL UNIT Volts Amps 500 35 140 ±30 ±40 403 3.22 -55 to 150 300 35 30 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 Volts Watts W/°C °C Amps mJ (Repetitive and Non-Repetitive) 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy 1300 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) Drain-Source On-State Resistance 2 MIN TYP MAX UNIT Volts 500 0.140 100 500 ±100 3 5 (VGS = 10V, 17.5A) Ohms µA nA Volts 6-2004 050-7025 Rev C Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1mA) APT Website - http://www.advancedpower.com CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. DYNAMIC CHARACTERISTICS Symbol Ciss Coss C rss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Symbol IS ISM VSD dv/ dt APT5014BFLL_SFLL Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 550V ID = 35A @ 25°C RESISTIVE SWITCHING VGS = 15V VDD = 550V ID = 35A @ 25°C 6 INDUCTIVE SWITCHING @ 25°C VDD = 333V, VGS = 15V INDUCTIVE SWITCHING @ 125°C VDD = 333V VGS = 15V ID = 35A, RG = 5Ω ID = 35A, RG = 5Ω RG = 1.6Ω Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 MIN TYP MAX UNIT pF 3261 704 50 72 20 36 11 6 23 3 325 249 545 288 MIN TYP MAX Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage Peak Diode Recovery 1 2 dt 6 nC ns µJ SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS UNIT Amps Volts V/ns ns µC Amps 35 140 1.3 15 Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C MIN (Body Diode) (VGS = 0V, IS = -35A) 5 d v/ t rr Q rr IRRM Reverse Recovery Time (IS = -35A, di/dt = 100A/µs) Reverse Recovery Charge (IS = -35A, di/dt = 100A/µs) Peak Recovery Current (IS = -35A, di/dt = 100A/µs) Characteristic Junction to Case Junction to Ambient 250 525 1.6 6.0 13 21 TYP MAX THERMAL CHARACTERISTICS Symbol RθJC RθJA UNIT °C/W 0.31 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 0.35 Z JC, THERMAL IMPEDANCE (°C/W) θ 4 Starting Tj = +25°C, L = 2.12mH, RG = 25Ω, Peak IL = 35A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -35A di/dt ≤ 700A/µs VR ≤ 500V TJ ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and information contained herein. 0.30 0.25 0.9 0.7 0.20 0.15 0.10 0.05 0 0.5 Note: PDM t1 t2 6-2004 0.3 050-7025 Rev C 0.1 0.05 10-5 10-4 SINGLE PULSE 10-3 10-2 Peak TJ = PDM x ZθJC + TC Duty Factor D = t1/t2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 1.0 Typical Performance Curves 100 15 &10V ID, DRAIN CURRENT (AMPERES) APT5014BFLL_SFLL 8V 80 RC MODEL Junction temp. (°C) 0.119 Power (watts) 0.191 Case temperature. (°C) 0.319F 0.0135F 60 7V 6.5V 20 20 6V 5.5V 5V FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.2 V NORMALIZED TO = 10V @ 17.5A 0 100 GS ID, DRAIN CURRENT (AMPERES) 80 1.15 1.10 1.05 VGS=20V 1.0 0.95 0.90 60 VGS=10V 40 TJ = +125°C TJ = +25°C TJ = -55°C 0 1 2 3 4 5 6 7 8 9 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS 20 0 0 35 30 25 20 15 10 5 0 25 BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 10 20 30 40 50 60 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT ID, DRAIN CURRENT (AMPERES) 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 2.5 I D = 17.5A = 10V V 2.0 VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) GS 1.1 1.0 0.9 0.8 0.7 0.6 -50 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 050-7025 Rev C 6-2004 Typical Performance Curves 140 OPERATION HERE LIMITED BY RDS (ON) 10,000 APT5014BFLL_SFLL Ciss ID, DRAIN CURRENT (AMPERES) 50 C, CAPACITANCE (pF) 100µS 1,000 Coss 10 1mS TC =+25°C TJ =+150°C SINGLE PULSE 100 Crss 10mS 0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11,CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE IDR, REVERSE DRAIN CURRENT (AMPERES) 1 1 5 10 50 100 500 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA I D 10 16 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) = 35A 200 100 50 TJ =+150°C TJ =+25°C 14 12 10 8 6 4 2 20 40 60 80 100 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 60 50 td(off) 0 0 VDS=100V VDS=250V VDS=400V 10 5 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 70 60 50 V DD G = 333V R = 5Ω T = 125°C J L = 100µH tf td(on) and td(off) (ns) 40 30 20 10 0 V DD G = 333V R tr and tf (ns) = 5Ω T = 125°C J 40 30 20 L = 100µH td(on) tr 10 0 0 30 40 50 60 ID (A) FIGURE 14, DELAY TIMES vs CURRENT V DD G 10 20 30 40 50 60 ID (A) FIGURE 15, RISE AND FALL TIMES vs CURRENT 1400 1200 SWITCHING ENERGY (µJ) V I DD 0 10 20 1000 = 333V = 333V R = 5Ω D J = 35A SWITCHING ENERGY (µJ) 800 T = 125°C J T = 125°C L = 100µH E ON i ncludes diode reverse recovery. Eoff L = 100µH EON i ncludes diode reverse recovery. 1000 800 600 400 200 0 600 Eon 400 Eon 6-2004 200 050-7025 Rev C Eoff 30 40 50 60 ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT 0 0 10 20 10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE 0 5 APT5014BFLL_SFLL Gate Voltage 10 % td(on) tr 90% Drain Current T = 125 C J 90% Gate Voltage td(off) Drain Voltage T = 125 C J 90% tf 5% Switching Energy 10 % Drain Voltage 10% 0 Switching Energy Drain Current Figure 18, Turn-on Switching Waveforms and Definitions Figure 19, Turn-off Switching Waveforms and Definitions APT30DF60 APT30DF60 V DD IC V CE G D.U.T. Figure 20, Inductive Switching Test Circuit TO-247 Package Outline Drain (Heat Sink) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC D PAK Package Outline 4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05 (.632) 13.41 (.528) 13.51 (.532) 3 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) 1.04 (.041) 1.15 (.045) Drain 20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150) Revised 4/18/95 13.79 (.543) 13.99 (.551) Revised 8/29/97 11.51 (.453) 11.61 (.457) 0.46 (.018) 0.56 (.022) {3 Plcs} 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 19.81 (.780) 20.32 (.800) 1.22 (.048) 1.32 (.052) Source 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) Source Drain Gate Dimensions in Millimeters (Inches) APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved. 050-7025 Rev C Gate Drain 5.45 (.215) BSC {2 Plcs.} Heat Sink (Drain) and Leads are Plated 6-2004 0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112) 1.27 (.050) 1.40 (.055) 1.98 (.078) 2.08 (.082) 3.81 (.150) 4.06 (.160) (Base of Lead)