APT5018SFLL

APT5018BFLL APT5018SFLL 500V 27A 0.180Ω BLL D3PAK TO-247 POWER MOS 7 ® R FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 SLL • Increased Power Dissipation • Easier To Drive • TO-247 or Surface Mount D3PAK Package • FAST RECOVERY BODY DIODE D G S All Ratings: TC = 25°C unless otherwise specified. APT5018 UNIT Volts Amps 500 27 108 ±30 ±40 300 2.4 -55 to 150 300 27 30 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 Volts Watts W/°C °C Amps mJ (Repetitive and Non-Repetitive) 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy 1210 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) On State Drain Current 2 MIN TYP MAX UNIT Volts Amps 500 27 0.180 250 1000 ±100 3 5 (VDS > I D(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 13.5A) Ohms µA nA Volts 3-2003 050-7027 Rev C Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1mA) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com DYNAMIC CHARACTERISTICS Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Symbol IS ISM VSD dv/ dt APT5018BFLL-SFLL Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 250V ID = 27A @ 25°C RESISTIVE SWITCHING VGS = 15V VDD = 250V ID = 27A @ 25°C RG = 0.6Ω 6 INDUCTIVE SWITCHING @ 25°C VDD = 333V, VGS = 15V ID = 27A, RG = 5Ω 6 INDUCTIVE SWITCHING @ 125°C VDD = 333V VGS = 15V ID = 27A, RG = 5Ω Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 MIN TYP MAX UNIT pF 2596 546 38 58 15 31 9 4 18 2 216 134 337 162 MIN TYP MAX Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage Peak Diode Recovery 1 2 dt nC ns µJ SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS UNIT Amps Volts V/ns ns 27 108 1.3 15 Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C MIN (Body Diode) (VGS = 0V, IS = -ID 27A) 5 dv/ t rr Reverse Recovery Time (IS = -ID 27A, di/dt = 100A/µs) Reverse Recovery Charge (IS = -ID 27A, di/dt = 100A/µs) Peak Recovery Current (IS = -ID 27A, di/dt = 100A/µs) Characteristic Junction to Case Junction to Ambient 250 450 1.76 4.23 12 17 TYP MAX Q rr IRRM µC Amps THERMAL CHARACTERISTICS Symbol RθJC RθJA UNIT °C/W 0.42 40 4 Starting Tj = +25°C, L = 3.32mH, RG = 25Ω, Peak IL = 27A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -ID27A di/dt ≤ 700A/µs VR ≤ VDSS TJ ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20. 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 0.45 Z JC, THERMAL IMPEDANCE (°C/W) θ APT Reserves the right to change, without notice, the specifications and information contained herein. 0.40 0.35 0.30 0.25 0.9 0.7 0.5 0.20 0.15 0.10 0.05 0 10-5 0.1 0.05 0.3 Note: PDM t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC 050-7027 Rev C 3-2003 SINGLE PULSE 10-4 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 1.0 Typical Preformance Curves 80 VGS=15 &10V 60 7.5V 7V APT5018BFLL-SFLL ID, DRAIN CURRENT (AMPERES) RC MODEL Junction temp. ( ”C) 0.161 Power (Watts) 0.259 Case temperature 0.236F 0.00994F 8V 40 6.5V 20 6V 5.5V 0 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.14 V GS RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 80 VDS> ID (ON) x RDS (ON)MAX. 250µSEC. PULSE TEST @