APT50M85B2VR APT50M85LVR
500V 56A 0.085Ω
POWER MOS V
®
MOSFET
B2VR
Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.
T-MAX™
TO-264
LVR
• TO-264 MAX Package • Faster Switching • Lower Leakage
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage
• Avalanche Energy Rated
D G S
All Ratings: TC = 25°C unless otherwise specified.
APT50M85B2VR_LVR UNIT Volts Amps
500 56 224 ±30 ±40 625 5.00 -55 to 150 300 56 50
4 1
Continuous Drain Current @ TC = 25°C Pulsed Drain Current
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/°C °C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
3000
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) Drain-Source On-State Resistance
2
MIN
TYP
MAX
UNIT Volts
500 0.085 25 250 ±100 2 4
(VGS = 10V, ID = 28A)
Ohms µA nA Volts
5-2004 050-5913 Rev A
Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
APT50M85B2VR_LVR
Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 250V ID = 56A @ 25°C VGS = 15V VDD = 250V ID = 56A @ 25°C RG = 0.6Ω MIN TYP MAX UNIT
10500 1290 600 420 50 200 16 18 60 6
ns nC pF
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol IS ISM VSD t rr Q rr
dv/ dt
Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage
1 2
MIN
TYP
MAX
UNIT Amps Volts ns µC
56 224 1.3 680 17 8
(Body Diode) (VGS = 0V, IS = - 56A)
Reverse Recovery Time (IS = -56A, dl S /dt = 100A/µs) Reverse Recovery Charge (IS = -56A, dl S /dt = 100A/µs) Peak Diode Recovery
dv/ dt 5
V/ns
THERMAL CHARACTERISTICS
Symbol RθJC RθJA Characteristic Junction to Case Junction to Ambient MIN TYP MAX UNIT °C/W
0.20 40
1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471
4 Starting T = +25°C, L = 1.91mH, R = 25Ω, Peak I = 56A j G L 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -ID56A di/dt ≤ 700A/µs VR ≤ 500V TJ ≤ 150°C
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.25
Z JC, THERMAL IMPEDANCE (°C/W) θ
0.20
0.9
0.15
0.7 0.5 0.3 Note:
PDM t1 t2 Peak TJ = PDM x ZθJC + TC Duty Factor D = t1/t2
5-2004
0.10
050-5913 Rev A
0.05 0.1 0 0.05 10-5 10-4 SINGLE PULSE
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
ID, DRAIN CURRENT (AMPERES)
160 140 120 100 80 60 40 20 0
APT50M85B2VR_LVR
VGS =15 &10 V 6.5V
RC MODEL Junction temp. (°C) 0.0846 Power (watts) 0.116 Case temperature. (°C) 0.249F 0.0122F
6V
5.5V 5V 4.5V 4V 0
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.40
NORMALIZED TO = 10V @ 28A V
GS
120 100 80 60 TJ = -55°C 40 TJ = +25°C 20 0 TJ = +125°C 0 1 2 3 4 5 6 7 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS
VDS> ID (ON) x RDS (ON)MAX. 250 µSEC. PULSE TEST @
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