APT60M75JLL_04

APT60M75JLL 600V 58A 0.075Ω POWER MOS 7 ® R MOSFET G S D S Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 SO 2 T- 27 "UL Recognized" ISOTOP ® • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package D G S All Ratings: TC = 25°C unless otherwise specified. APT60M75JLL UNIT Volts Amps 600 58 232 ±30 ±40 595 4.76 -55 to 150 300 58 50 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 Volts Watts W/°C °C Amps mJ (Repetitive and Non-Repetitive) 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy 3200 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) Drain-Source On-State Resistance 2 MIN TYP MAX UNIT Volts 600 0.075 100 500 ±100 3 5 (VGS = 10V, ID = 29A) Ohms µA nA Volts 9-2004 050-7099 Rev B Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 480V, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 5mA) APT Website - http://www.advancedpower.com CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. DYNAMIC CHARACTERISTICS Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 APT60M75JLL Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 300V ID = 58A @ 25°C RESISTIVE SWITCHING VGS = 15V VDD = 300V ID = 58A @ 25°C RG = 0.6Ω 6 INDUCTIVE SWITCHING @ 25°C VDD = 400V, VGS = 15V ID = 58A, RG = 5Ω 6 INDUCTIVE SWITCHING @ 125°C VDD = 400V VGS = 15V ID = 58A, RG = 5Ω MIN TYP MAX UNIT 8930 1130 50 195 48 100 23 15 55 10 1205 1385 1865 1550 MIN TYP MAX UNIT Amps Volts ns µC V/ns nC pF Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy ns µJ SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM VSD t rr rr dv/ dt Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage 1 2 58 232 1.3 857 26 8 MIN TYP MAX (Body Diode) (VGS = 0V, IS = - 58A) Reverse Recovery Time (IS = -58A, dl S /dt = 100A/µs) Reverse Recovery Charge (IS = -58A, dl S/dt = 100A/µs) Peak Diode Recovery d v/ dt 5 Q THERMAL CHARACTERISTICS Symbol RθJC RθJA Characteristic Junction to Case Junction to Ambient UNIT °C/W 0.21 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 4 Starting Tj = +25°C, L = 1.90mH, RG = 25Ω, Peak IL = 58A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -ID58A di/dt ≤ 700A/µs VR ≤ 600V TJ ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and inforation contained herein. 0.25 Z JC, THERMAL IMPEDANCE (°C/W) θ 0.20 0.9 0.15 0.7 0.5 Note: PDM t1 t2 Peak TJ = PDM x ZθJC + TC Duty Factor D = t1/t2 9-2004 0.10 0.3 0.05 0.1 0.05 050-7099 Rev B 0 10-5 SINGLE PULSE 10-4 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 10 Typical Performance Curves ID, DRAIN CURRENT (AMPERES) Junction temp. (°C) RC MODEL 200 180 160 140 120 100 80 60 40 20 0 APT60M75JLL VGS =15 &10V 8V 7.5V 7V 6.5 0.0492 0.0273F Power (watts) 0.142 0.469F 6V 0.0189 Case temperature. (°C) 44.2F 5.5V FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.40 V NORMALIZED TO = 10V @ I = 29A D 180 160 ID, DRAIN CURRENT (AMPERES) VDS> ID (ON) x RDS(ON) MAX. 250µSEC. PULSE TEST @